公开(公告)号：US20170133075A1

公开(公告)日：2017-05-11

申请号：US15413037

申请日：2017-01-23

Applicant: Micron Technology, Inc.

Inventor： Jun Liu ,  Gurtej Sandhu

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1695 ,  H01L43/02

Abstract: Spin torque transfer magnetic random access memory devices configured to be programmed unidirectionally and methods of programming such devices. The devices include memory cells having two pinned layers and a free layer therebetween. By utilizing two pinned layers, the spin torque effect on the free layer from each of the two pinned layers, respectively, allows the memory cells to be programmed with unidirectional currents.

公开(公告)号：US09589618B2

公开(公告)日：2017-03-07

申请号：US14553758

申请日：2014-11-25

Applicant: Micron Technology, Inc.

Inventor： Jun Liu ,  Gurtej Sandhu

IPC: G11C11/16 ,  H01L43/02

CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1695 ,  H01L43/02

Abstract: Spin torque transfer magnetic random access memory devices configured to be programmed unidirectionally and methods of programming such devices. The devices include memory cells having two pinned layers and a free layer therebetween. By utilizing two pinned layers, the spin torque effect on the free layer from each of the two pinned layers, respectively, allows the memory cells to be programmed with unidirectional currents.

Abstract translation: 配置为单向编程的自旋扭矩传递磁性随机存取存储器件以及编程这种器件的方法。 这些装置包括具有两个钉扎层和其间的自由层的存储单元。 通过利用两个固定层，分别从两个固定层中的每一个自由层上的自旋转矩效应允许以单向电流编程存储器单元。

公开(公告)号：US09552858B2

公开(公告)日：2017-01-24

申请号：US14947978

申请日：2015-11-20

Applicant: Micron Technology, Inc.

Inventor： Jun Liu ,  Steve Kramer ,  Gurtej Sandhu

IPC: G11C11/00 ,  G11C11/16 ,  H01L27/22 ,  H01L43/08

CPC classification number: G11C11/161 ,  G11C11/16 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

Abstract: A magnetic memory cell including a piezoelectric material, and methods of operating the memory cell are provided. The memory cell includes a stack, and the piezoelectric material may be formed as a layer in the stack or adjacent the layers of the cell stack. The piezoelectric material may be used to induce a transient stress during programming of the memory cell to reduce the critical switching current of the memory cell.

Abstract translation: 提供了包括压电材料的磁存储单元和操作存储单元的方法。 存储单元包括堆叠，并且压电材料可以形成为堆叠中的层或邻近电池堆的层。 压电材料可以用于在编程存储器单元期间引起瞬态应力以减小存储器单元的关键开关电流。

公开(公告)号：US09437809B2

公开(公告)日：2016-09-06

申请号：US14290477

申请日：2014-05-29

Applicant: Micron Technology, Inc.

Inventor： Jun Liu ,  Gurtej Sandhu

IPC: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  H01F10/32 ,  H01L27/22 ,  H01F41/30

CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/329 ,  H01F41/306 ,  H01F41/307 ,  H01L27/228 ,  Y10S977/70

Abstract: A magnetic cell structure including a nonmagnetic filament contact, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, an insulative layer between the free and pinned layers, and a nonmagnetic filament contact in the insulative layer which electrically connects the free and pinned layers. The nonmagnetic filament contact is formed from a nonmagnetic source layer, also between the free and pinned layers. The filament contact directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.

Abstract translation: 提供包括非磁性细丝接触的磁性单元结构以及制造该结构的方法。 磁性单元结构包括自由层，钉扎层，自由层和被钉扎层之间的绝缘层，以及绝缘层中的非磁性细丝接触，其电连接自由层和被钉扎层。 非磁性细丝接触由非磁性源层形成，也在自由层和被钉扎层之间。 灯丝接触引导编程电流通过磁性电池结构，使得自由层中编程电流的横截面面积小于结构的横截面。 自由层中编程电流的横截面积的减小使编程电流能够达到自由层中的关键开关电流密度并切换自由层的磁化，对磁性单元进行编程。

公开(公告)号：US09368444B2

公开(公告)日：2016-06-14

申请号：US14586412

申请日：2014-12-30

Applicant: Micron Technology, Inc.

Inventor： Gurtej Sandhu

IPC: H01L23/52 ,  H01L23/522 ,  H01L21/033 ,  H01L21/311

CPC classification number: H01L23/5226 ,  H01L21/0337 ,  H01L21/31144 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for creating structures in a semiconductor assembly is provided. The method includes etching apertures into a dielectric layer and applying a polymer layer over the dielectric layer. The polymer layer is applied uniformly and fills the apertures at different rates depending on the geometry of the apertures, or on the presence or absence of growth accelerating material. The polymer creates spacers for the etching of additional structure in between the spacers. The method is capable of achieving structures smaller than current lithography techniques.

公开(公告)号：US09305826B2

公开(公告)日：2016-04-05

申请号：US14698091

申请日：2015-04-28

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Roy Meade ,  Gurtej Sandhu

IPC: H01L21/76 ,  H01L29/00 ,  H01L21/762 ,  G02B6/136 ,  H01L27/146 ,  H01L29/06 ,  G02B6/122 ,  H01L27/092 ,  G02B6/13 ,  H01L21/308 ,  G02B6/12

CPC classification number: H01L21/76229 ,  G02B6/1225 ,  G02B6/13 ,  G02B6/136 ,  G02B2006/121 ,  H01L21/3086 ,  H01L21/76232 ,  H01L21/76283 ,  H01L27/092 ,  H01L27/14689 ,  H01L29/0649

Abstract: A method of forming a substrate with isolation areas suitable for integration of electronic and photonic devices is provided. A common reticle and photolithographic technique is used to fabricate a mask defining openings for etching first and second trench isolation areas in a substrate, with the openings for the second trench isolation areas being wider than the openings for the first trench isolation areas. The first and second trench isolation areas are etched in the substrate through the mask. The second trench isolation areas are further etched to the deeper than the first trench isolation areas. The trench isolation areas are filled with oxide material. Electrical devices can be formed on the substrate and electrically isolated by the first trench isolation areas and photonic devices can be formed over the second trench isolation areas and be optically isolated from the substrate.

公开(公告)号：US09274272B2

公开(公告)日：2016-03-01

申请号：US14176736

申请日：2014-02-10

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Gurtej Sandhu ,  Roy Meade

IPC: G02B6/10 ,  G02B6/12 ,  G02B6/13 ,  B82Y20/00 ,  G02B6/122

CPC classification number: G02B6/12 ,  B82Y20/00 ,  G02B6/122 ,  G02B6/1223 ,  G02B6/1225 ,  G02B6/13 ,  G02B2006/121 ,  H01L2933/0083

Abstract: A photonic device and methods of formation that provide an area providing reduced optical coupling between a substrate and an inner core of the photonic device are described. The area is formed using holes in the inner core and an outer cladding. The holes may be filled with materials which provide a photonic crystal. Thus, the photonic device may function as a waveguide and as a photonic crystal.

Abstract translation: 描述了提供在光子器件的衬底和内核之间提供减小的光学耦合的区域的光子器件和形成方法。 该区域由内芯和外包层中的孔形成。 孔可以填充提供光子晶体的材料。 因此，光子器件可以用作波导和光子晶体。

公开(公告)号：US09224458B2

公开(公告)日：2015-12-29

申请号：US13930952

申请日：2013-06-28

Applicant: Micron Technology, Inc.

Inventor： Jun Liu ,  Gurtej Sandhu

IPC: H01L45/00 ,  G11C13/00

CPC classification number: G11C13/0002 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/149

Abstract: A memory array is disclosed having bipolar current-voltage (IV) resistive random access memory cells with built-in “on” state rectifying IV characteristics. In one embodiment, a bipolar switching resistive random access memory cell may have a metal/solid electrolyte/semiconductor stack that forms a Schottky diode when switched to the “on” state. In another embodiment, a bipolar switching resistive random access memory cell may have a metal/solid electrolyte/tunnel barrier/electrode stack that forms a metal-insulator-metal device when switched to the “on” state. Methods of operating the memory array are also disclosed.

Abstract translation: 公开了具有内置“on”状态整流IV特性的双极电流 - 电压（IV）电阻随机存取存储器单元的存储器阵列。 在一个实施例中，双极开关电阻随机存取存储器单元可以具有当切换到“导通”状态时形成肖特基二极管的金属/固体电解质/半导体堆叠。 在另一个实施例中，双极开关电阻随机存取存储器单元可以具有当切换到“导通”状态时形成金属 - 绝缘体 - 金属器件的金属/固体电解质/隧道势垒/电极堆叠。 还公开了操作存储器阵列的方法。

公开(公告)号：US20150192737A1

公开(公告)日：2015-07-09

申请号：US14662524

申请日：2015-03-19

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Gurtej Sandhu ,  Roy Meade

IPC: G02B6/122

CPC classification number: G02B6/1225 ,  G02B6/12004 ,  G02B6/136 ,  G02B2006/12097 ,  H01L21/308

Abstract: Disclosed method and apparatus embodiments provide a photonic device with optical isolation from a supporting substrate. A generally rectangular cavity in cross section is provided below an element of the photonic device and the element may be formed from a ledge of the supporting substrate which is over the cavity.

Abstract translation: 公开的方法和装置实施例提供了一种具有与支撑衬底的光隔离的光子器件。 在光子器件的元件的下方提供横截面的大致矩形的空腔，并且元件可以由在空腔上的支撑衬底的凸缘形成。

公开(公告)号：US20150078073A1

公开(公告)日：2015-03-19

申请号：US14553758

申请日：2014-11-25

Applicant: Micron Technology, Inc.

Inventor： Jun Liu ,  Gurtej Sandhu

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1695 ,  H01L43/02

Abstract: Spin torque transfer magnetic random access memory devices configured to be programmed unidirectionally and methods of programming such devices. The devices include memory cells having two pinned layers and a free layer therebetween. By utilizing two pinned layers, the spin torque effect on the free layer from each of the two pinned layers, respectively, allows the memory cells to be programmed with unidirectional currents.

Abstract translation: 配置为单向编程的自旋扭矩传递磁性随机存取存储器件以及编程这种器件的方法。 这些装置包括具有两个钉扎层和其间的自由层的存储单元。 通过利用两个固定层，分别从两个固定层中的每一个自由层上的自旋转矩效应允许以单向电流编程存储器单元。