公开(公告)号：US07216948B2

公开(公告)日：2007-05-15

申请号：US10902060

申请日：2004-07-30

申请人： Yoshiki Matsuzaki ,  Kozo Tagawa ,  Ryo Ando ,  Takeshi Kato ,  Tsutomu Udaka ,  Toshiyuki Kazama ,  Osamu Goto ,  Kenichi Kawauchi

发明人： Yoshiki Matsuzaki ,  Kozo Tagawa ,  Ryo Ando ,  Takeshi Kato ,  Tsutomu Udaka ,  Toshiyuki Kazama ,  Osamu Goto ,  Kenichi Kawauchi

IPC分类号： B41J29/393

CPC分类号： B41J2/04505 ,  B41J2/04573 ,  B41J2/04586 ,  B41J2/155

摘要： An image forming apparatus has: a recording head having plural unit recording heads divided in a direction orthogonal to a moving direction of a recording medium; a detecting section detecting at least offset of an image recorded by a vicinity of an end portion, in the direction orthogonal to the moving direction of the recording medium, of the plural unit recording heads; and a correcting section correcting recording offset of the recording head on the basis of results of detection of the detecting section.

摘要翻译： 图像形成装置具有：记录头，具有沿与记录介质的移动方向正交的方向分割的多个单位记录头; 检测部分，在与所述记录介质的移动方向正交的方向上检测由端部附近记录的图像的偏移;多个单位记录头; 以及校正部，其基于检测部的检测结果来校正记录头的记录偏移。

公开(公告)号：US07149235B2

公开(公告)日：2006-12-12

申请号：US11132981

申请日：2005-05-19

申请人： Tsuyoshi Tojo ,  Tomonori Hino ,  Osamu Goto ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Shiro Uchida ,  Masao Ikeda

发明人： Tsuyoshi Tojo ,  Tomonori Hino ,  Osamu Goto ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Shiro Uchida ,  Masao Ikeda

IPC分类号： H01S5/00

CPC分类号： H01S5/4031 ,  H01S5/0425 ,  H01S5/32341 ,  H01S5/4087

摘要： A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A, 42B, 42C and 42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to 42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A, 50B, 50C and 50D) respectively. Two n-type electrodes (52A and 52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 μm. The distance B1 between the laser stripe (42A) and the n-type electrode (52B) is no larger than 150 μm while the distance B2 between the laser stripe (42D) and the n-type electrode (52A) is no larger than 150 μm.

摘要翻译： 提供能够发射具有均匀光输出水平的各激光束并且能够容易对准的多光束半导体激光器装置。 该多光束半导体激光器件（40）是具有能够发射具有相同波长的激光束的四个激光条纹（42A，42B，42C和42D）的GaN基多光束半导体激光器件。 相应的激光振荡区域（42A至42D）在形成在蓝宝石衬底（44）上的台面结构（46）上设置有p型公共电极（48），并具有活性区域（50A， 50B，50C和50D）。 在n型GaN接触层（54）上设置两个n型电极（52A和52B），并且位于与台面结构（46）的两侧的p型公共电极（48）相对的公共电极 ）。 激光条纹（42A）与激光条纹（42D）之间的距离A不大于100μm。 激光条纹（42A）和n型电极（52B）之间的距离B 1 <1>不大于150μm，而激光之间的距离B 2 <2> 条纹（42D）和n型电极（52A）不大于150μm。

公开(公告)号：US20060198602A1

公开(公告)日：2006-09-07

申请号：US11363949

申请日：2006-03-01

申请人： Osamu Goto ,  Akira Kitamura

发明人： Osamu Goto ,  Akira Kitamura

IPC分类号： H04N5/91

CPC分类号： H04N5/76 ,  H04N5/85 ,  H04N9/8042 ,  H04N9/8205

摘要： To record AV data separately in a plurality of recording media, when a disk end detector detects that the free space in a disk runs out, a stream recording location controller accumulates AV data of a stream buffer in a stream shunt memory. When the disk is replaced with a new one, a disk recordability detector detects whether or not the new disk has become recordable. If recordable, a shunted stream write-back section transfers the AV data held in the stream shunt memory to the new disk.

摘要翻译： 为了在多个记录介质中单独记录AV数据，当盘端检测器检测到盘中的可用空间用尽时，流记录位置控制器将流缓冲器的AV数据累积在流分流存储器中。 当更换新的磁盘时，磁盘记录检测器检测新的磁盘是否已经可记录。 如果可记录，分流流回写部分将流分流存储器中保存的AV数据传输到新磁盘。

公开(公告)号：US20060092264A1

公开(公告)日：2006-05-04

申请号：US11085174

申请日：2005-03-22

申请人： Yoshiki Matsuzaki ,  Kozo Tagawa ,  Takeshi Kato ,  Osamu Goto

发明人： Yoshiki Matsuzaki ,  Kozo Tagawa ,  Takeshi Kato ,  Osamu Goto

IPC分类号： B41J2/455

CPC分类号： G03G15/326 ,  G03G15/0194 ,  G03G15/0435 ,  G03G2215/0119 ,  G03G2215/0158 ,  G03G2215/0404

摘要： An image forming apparatus having a plurality of light sources and printing an image carrier by collectively scanning an image carrier with beams from the plurality of light sources includes a screen processing unit for performing a screen process on input image data and a registration correction processing unit for performing skew correction on the image data on which the screen process has been performed and for performing an image shift process in the sub-scanning direction, which is a moving direction of the image carrier, based on a periodic characteristic of exposure by the collective scanning and the period of the screen by the screen process.

摘要翻译： 具有多个光源的图像形成装置和通过用来自多个光源的光束共同扫描图像载体来打印图像载体的图像形成装置包括：画面处理单元，用于对输入图像数据进行画面处理;以及登记校正处理单元， 对已经进行了画面处理的图像数据执行偏斜校正，并且基于通过集体扫描的曝光的周期特性，在作为图像载体的移动方向的副扫描方向上执行图像移位处理 和屏幕过程的屏幕时间。

公开(公告)号：US20050227392A1

公开(公告)日：2005-10-13

申请号：US11148771

申请日：2005-06-09

申请人： Tsunenori Asatsuma ,  Shigetaka Tomiya ,  Koshi Tamamura ,  Tsuyoshi Tojo ,  Osamu Goto ,  Kensaku Motoki

发明人： Tsunenori Asatsuma ,  Shigetaka Tomiya ,  Koshi Tamamura ,  Tsuyoshi Tojo ,  Osamu Goto ,  Kensaku Motoki

IPC分类号： C30B25/02 ,  H01L21/20 ,  H01L33/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/02 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/40 ,  H01L21/00 ,  H01L29/22

CPC分类号： C30B25/02 ,  B82Y20/00 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/32 ,  H01S5/0207 ,  H01S5/0213 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/2231 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/4031 ,  H01S2301/173

摘要： When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.

摘要翻译： 当半导体发光器件或半导体器件通过在由氮化物III-V化合物半导体衬底构成的氮化物III-V化合物半导体衬底上生长氮化物III-V化合物半导体层（其将形成发光器件结构或器件结构） 具有第一平均位错密度的晶体的形式和具有高于第一平均位错密度的第二平均位错密度并在第一区域中周期性排列的多个第二区域，器件区域被限定在氮化物III-V化合物半导体衬底 使得器件区域基本上不包括第二区域，最终获得的器件的发射区域或有源区域不包括第二区域。

公开(公告)号：US20050218422A1

公开(公告)日：2005-10-06

申请号：US11132981

申请日：2005-05-19

申请人： Tsuyoshi Tojo ,  Tomonori Hino ,  Osamu Goto ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Shiro Uchida ,  Masao Ikeda

发明人： Tsuyoshi Tojo ,  Tomonori Hino ,  Osamu Goto ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Shiro Uchida ,  Masao Ikeda

IPC分类号： H01L21/205 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/40 ,  H01L29/24

CPC分类号： H01S5/4031 ,  H01S5/0425 ,  H01S5/32341 ,  H01S5/4087

摘要： A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A, 42B, 42C and 42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to 42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A, 50B, 50C and 50D) respectively. Two n-type electrodes (52A and 52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 μm. The distance B1 between the laser stripe (42A) and the n-type electrode (52B) is no larger than 150 μM while the distance B2 between the laser stripe (42D) and the n-type electrode (52A) is no larger than 150 μm.

摘要翻译： 提供能够发射具有均匀光输出水平的各激光束并且能够容易对准的多光束半导体激光器装置。 该多光束半导体激光器件（40）是具有能够发射具有相同波长的激光束的四个激光条纹（42A，42B，42C和42D）的GaN基多光束半导体激光器件。 相应的激光振荡区域（42A至42D）在形成在蓝宝石衬底（44）上的台面结构（46）上设置有p型公共电极（48），并具有活性区域（50A， 50B，50C和50D）。 在n型GaN接触层（54）上设置两个n型电极（52A和52B），并且位于与台面结构（46）的两侧的p型公共电极（48）相对的公共电极 ）。 激光条纹（42A）与激光条纹（42D）之间的距离A不大于100μm。 激光条纹（42A）和n型电极（52B）之间的距离B 1 <1>不大于150μm，而激光器之间的距离B <2 <2> 条纹（42D）和n型电极（52A）不大于150μm。

公开(公告)号：US20050191773A1

公开(公告)日：2005-09-01

申请号：US10873479

申请日：2004-06-23

申请人： Yasuhiko Suzuki ,  Takeharu Asano ,  Motonobu Takeya ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya

发明人： Yasuhiko Suzuki ,  Takeharu Asano ,  Motonobu Takeya ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya

IPC分类号： C30B29/38 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  H01L21/20 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L21/00

CPC分类号： C30B25/18 ,  C30B25/02 ,  C30B29/40 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/007

摘要： When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to satisfy 0

摘要翻译： 当GaN或其它氮化物III-V化合物半导体层在诸如蓝宝石衬底的衬底上生长时，衬底的厚度x相对于氮化物III-V化合物半导体层的厚度y被控制为满足0 =450μm。 或者，如果基板的最大尺寸为D（cm），则其翘曲H在0

公开(公告)号：US20050178471A1

公开(公告)日：2005-08-18

申请号：US11108423

申请日：2005-04-18

申请人： Osamu Goto ,  Takeharu Asano ,  Motonobu Takeya ,  Katsunori Yanashima

发明人： Osamu Goto ,  Takeharu Asano ,  Motonobu Takeya ,  Katsunori Yanashima

IPC分类号： C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L33/00 ,  H01S5/02 ,  H01S5/323 ,  H01L21/00 ,  H01L29/06 ,  H01L29/22 ,  H01L29/30 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01S5/0207 ,  H01S5/32341 ,  H01S2304/12

摘要： Provided is a nitride semiconductor having a larger low-defective region on a surface thereof, a semiconductor device using the nitride semiconductor, a method of manufacturing a nitride semiconductor capable of easily reducing surface defects in a step of forming a layer through lateral growth, and a method of manufacturing a semiconductor device manufactured by the use of the nitride semiconductor. A seed crystal portion is formed into stripes on a substrate with a buffer layer sandwiched therebetween. Then, a crystal is grown from the seed crystal portion in two steps of growth conditions to form a nitride semiconductor layer. In a first step, a low temperature growth portion having a trapezoidal-shaped cross section in a layer thickness direction is formed at a growth temperature of 1030° C., and in a second step, lateral growth predominantly takes place at a growth temperature of 1070° C. Then, a high temperature growth potion is formed between the low temperature growth portions. Thereby, hillocks and lattice defects can be reduced in a region of the surface of the nitride semiconductor layer above the low temperature growth portion.

摘要翻译： 提供一种其表面上具有较大缺陷区域的氮化物半导体，使用氮化物半导体的半导体器件，能够通过横向生长形成层的步骤中能够容易地减少表面缺陷的氮化物半导体的制造方法，以及 制造通过使用氮化物半导体制造的半导体器件的方法。 籽晶部分在衬底上形成条纹，缓冲层夹在其间。 然后，在生长条件的两个步骤中从籽晶部分生长晶体，以形成氮化物半导体层。 在第一步骤中，在1030℃的生长温度下形成具有层厚度方向的梯形截面的低温生长部分，在第二步骤中，横向生长主要发生在生长温度 1070℃。然后，在低温生长部分之间形成高温生长剂。 因此，可以在低温生长部分以上的氮化物半导体层的表面的区域中减小小丘和晶格缺陷。

公开(公告)号：US5775409A

公开(公告)日：1998-07-07

申请号：US739299

申请日：1996-10-29

申请人： Osamu Goto ,  Koji Kimura

发明人： Osamu Goto ,  Koji Kimura

IPC分类号： F28F25/06 ,  F28C1/14 ,  F28C1/16 ,  F28F27/02 ,  B01F3/04

CPC分类号： F28C1/14 ,  F28C2001/145 ,  Y10S165/90 ,  Y10S261/77

摘要： The present invention relates to a cross flow type cooling tower with which it is possible to prevent emission of white vapor in cold weather. In order to accomplish the above object, the cooling tower of the present invention is constructed of heat exchange units each of which having plates arranged vertically and parallel from each other so as to form passages therebetween, which are separated into wet air passages and switchable air passages capable of switching from dry air passages and wet air passages; a water bath divided into upper and lower baths by a partition plate with holes, the upper bath is provided with spray nozzles for spraying water into the switchable passages, the lower bath provided with spray nozzles for spraying water into the wet passages. When the weather is warm, hot water is supplied into the upper bath, and both the upper and lower baths are filled with water and cooling is performed in every passage. However, when the weather is cold, then the water is supplied to the lower bath, and only the wet passages are used for heat dissipation and the switchable passages are uses to produce dry air to prevent generation of white vapor by mixing the dry air with the moist air.

摘要翻译： 本发明涉及一种横流式冷却塔，可以在寒冷的天气中防止白色蒸气的排放。 为了实现上述目的，本发明的冷却塔由热交换单元构成，每个热交换单元具有彼此垂直且平行排列的板，以便在它们之间形成通道，分离成湿气通道和可切换空气 能够从干燥空气通道和湿气通道切换的通道; 通过具有孔的隔板将水浴分为上，下浴槽，上浴槽设有用于将水喷入可切换通道中的喷嘴，下浴槽设有用于将水喷入湿通道的喷嘴。 当天气温暖时，将热水供应到上部浴室中，并且上部和下部两个浴都充满水，并在每个通道中进行冷却。 然而，当天气寒冷时，将水供应到下层浴池，只有湿通道用于散热，可切换通道用于生产干燥空气，以防止通过将干燥空气与 潮湿的空气。

公开(公告)号：US5695006A

公开(公告)日：1997-12-09

申请号：US708717

申请日：1996-09-05

申请人： Masahiro Usui ,  Shigehira Yamamoto ,  Osamu Goto

发明人： Masahiro Usui ,  Shigehira Yamamoto ,  Osamu Goto

IPC分类号： F28C1/04 ,  F28C1/14 ,  F28F25/02 ,  F28F25/08 ,  F28C1/16

CPC分类号： F28C1/14 ,  F28F25/02 ,  F28F25/08 ,  Y10S165/163 ,  Y10S261/11 ,  Y10S261/77 ,  Y10T29/4935

摘要： The present invention relates to a heat dissipation unit for cross flow type cooling tower with which it is possible to prevent the emission of white vapor without lowering the cooling power of the cooling tower, and also without requiring troublesome routine operation. In order to accomplish the above object, the heat dissipation unit of the present invention comprises filling plates arranged vertically and parallel with each other so as to form spaces therebetween, each of the filling plates having uneven surfaces down which water to be cooled flows when water to be cooled is supplied onto the filling plates, and cowl members disposed between neighboring filling plates, each of the cowl members including a pair of side plate portions having upper ends and a roof portion connecting the upper ends of the side plate portions. The side plate portions of the cowl members are arranged substantially parallel with the filling plates so as to form gaps between the filling plates and the side plate portions of the cowl members.

摘要翻译： 本发明涉及一种用于横流型冷却塔的散热单元，其可以防止白蒸汽的发射而不降低冷却塔的冷却功率，并且也不需要麻烦的日常操作。 为了实现上述目的，本发明的散热单元包括彼此垂直且平行布置的填充板，以便在它们之间形成空间，每个填充板具有不平坦的表面，当水被冷却时，待冷却的水流动 要被冷却的物品被供应到填充板上，并且前围组件设置在相邻的填充板之间，每个前围构件包括一对具有上端的侧板部和连接侧板部的上端的顶部部分。 整流罩构件的侧板部分布置成与填充板基本平行，以便在整流罩构件的填充板和侧板部分之间形成间隙。