公开(公告)号：US08718110B2

公开(公告)日：2014-05-06

申请号：US13366636

申请日：2012-02-06

申请人： Takashi Kyono ,  Yohei Enya ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Masaki Ueno ,  Katsunori Yanashima ,  Kunihiko Tasai ,  Hiroshi Nakajima

发明人： Takashi Kyono ,  Yohei Enya ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Masaki Ueno ,  Katsunori Yanashima ,  Kunihiko Tasai ,  Hiroshi Nakajima

IPC分类号： H01S5/00

CPC分类号： H01S5/3201 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： A nitride semiconductor laser includes an electrically conductive support substrate with a primary surface of a gallium nitride based semiconductor, an active layer provided above the primary surface, and a p-type cladding region provided above the primary surface. The primary surface is inclined relative to a reference plane perpendicular to a reference axis extending in a direction of the c-axis of the gallium nitride based semiconductor. The p-type cladding region includes first and second p-type Group III nitride semiconductor layers. The first p-type semiconductor layer comprises an InAlGaN layer including built-in anisotropic strain. The second p-type semiconductor layer comprises semiconductor different from material of the InAlGaN layer. The first nitride semiconductor layer is provided between the second p-type semiconductor layer and the active layer. The second p-type semiconductor layer has a resistivity lower than that of the first p-type semiconductor layer.

摘要翻译： 氮化物半导体激光器包括具有氮化镓基半导体的主表面的导电支撑衬底，设置在主表面上方的有源层和设置在主表面上的p型覆层区域。 主表面相对于垂直于在氮化镓基半导体的c轴方向上延伸的参考轴的参考平面倾斜。 p型包层区域包括第一和第二p型III族氮化物半导体层。 第一p型半导体层包括包括内置各向异性应变的InAlGaN层。 第二p型半导体层包括与InAlGaN层的材料不同的半导体。 第一氮化物半导体层设置在第二p型半导体层和有源层之间。 第二p型半导体层的电阻率低于第一p型半导体层的电阻率。

公开(公告)号：US08548021B2

公开(公告)日：2013-10-01

申请号：US13211858

申请日：2011-08-17

申请人： Kei Fujii ,  Masaki Ueno ,  Katsushi Akita ,  Takashi Kyono ,  Yusuke Yoshizumi ,  Takamichi Sumitomo ,  Yohei Enya

发明人： Kei Fujii ,  Masaki Ueno ,  Katsushi Akita ,  Takashi Kyono ,  Yusuke Yoshizumi ,  Takamichi Sumitomo ,  Yohei Enya

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3404 ,  H01S2304/04

摘要： Provided is a III-nitride semiconductor laser allowing for provision of a low threshold with use of a semipolar plane. A primary surface 13a of a semiconductor substrate 13 is inclined at an angle of inclination AOFF in the range of not less than 50 degrees and not more than 70 degrees toward the a-axis direction of GaN with respect to a reference plane perpendicular to a reference axis Cx along the c-axis direction of GaN. A first cladding layer 15, an active layer 17, and a second cladding layer 19 are provided on the primary surface 13a of the semiconductor substrate 13. The well layers 23a of the active layer 17 comprise InGaN. A polarization degree P in the LED mode of emission from the active layer of the semiconductor laser that reaches lasing is not less than −1 and not more than 0.1. The polarization degree P of the III-nitride semiconductor laser is defined by P=(I1−I2)/(I1+I2), using an electric field component I1 in the X1 direction and an electric field component I2 in the X2 direction of light in the LED mode.

摘要翻译： 提供了允许使用半极性平面提供低阈值的III族氮化物半导体激光器。 半导体基板13的主表面13a相对于垂直于参考的参考平面朝向a轴方向的不小于50度且不超过70度的范围内以倾斜角AOFF倾斜 沿着C轴方向的C x轴。 在半导体衬底13的主表面13a上设置第一覆层15，有源层17和第二覆层19.有源层17的阱层23a包括InGaN。 来自激光器的半导体激光器的有源层的发光LED的偏振度P不小于-1且不大于0.1。 III族氮化物半导体激光器的偏振度P通过使用X1方向的电场分量I1和X2方向的电场分量I2由P =（I1-I2）/（I1 + I2）定义 在LED模式下。

公开(公告)号：US08548020B2

公开(公告)日：2013-10-01

申请号：US12837291

申请日：2010-07-15

申请人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

发明人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

IPC分类号： H01S5/00

摘要： A III-nitride semiconductor laser device includes a laser structure including a support base, a semiconductor region, and an electrode. The support base includes a hexagonal III-nitride semiconductor and a semipolar primary surface. The semiconductor region includes first and second cladding layers and an active layer arranged along an axis normal to the semipolar primary surface. A c-axis of the hexagonal III-nitride semiconductor is inclined at an angle ALPHA with respect to the normal axis toward an m-axis of the hexagonal III-nitride semiconductor. The laser structure includes first and second fractured faces that intersect with an m-n plane defined by the normal axis and the m-axis of the hexagonal III-nitride semiconductor. A laser cavity of the laser device includes the first and second fractured faces. Each of the first and second fractured faces have a stripe structure on an end face of the support base.

公开(公告)号：US08507305B2

公开(公告)日：2013-08-13

申请号：US13443480

申请日：2012-04-10

申请人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Nobuhiro Saga ,  Masahiro Adachi ,  Kazuhide Sumiyoshi ,  Shinji Tokuyama ,  Shimpei Takagi ,  Takatoshi Ikegami ,  Masaki Ueno ,  Koji Katayama

发明人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Nobuhiro Saga ,  Masahiro Adachi ,  Kazuhide Sumiyoshi ,  Shinji Tokuyama ,  Shimpei Takagi ,  Takatoshi Ikegami ,  Masaki Ueno ,  Koji Katayama

IPC分类号： H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202

摘要： A III-nitride semiconductor laser device is provided with a laser structure and an electrode. The laser structure includes a support base which includes a hexagonal III-nitride semiconductor and a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface. The electrode is provided on the semiconductor region. The semiconductor region includes a first cladding layer of a first conductivity type GaN-based semiconductor, a second cladding layer of a second conductivity type GaN-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer.

摘要翻译： III族氮化物半导体激光器件具有激光结构和电极。 激光器结构包括支撑基底，其包括六边形III族氮化物半导体和半极性主表面，以及设置在半极性主表面上的半导体区域。 电极设置在半导体区域上。 半导体区域包括第一导电型GaN基半导体的第一包层，第二导电型GaN基半导体的第二包层和设置在第一包层和第二包层之间的有源层。

公开(公告)号：US08483251B2

公开(公告)日：2013-07-09

申请号：US13294378

申请日：2011-11-11

申请人： Yohei Enya ,  Yusuke Yoshizumi ,  Takashi Kyono ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Takao Nakamura

发明人： Yohei Enya ,  Yusuke Yoshizumi ,  Takashi Kyono ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Takao Nakamura

IPC分类号： H01S5/00

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01S5/2009 ,  H01S5/34333

摘要： Provided is a Group III nitride semiconductor laser diode with a cladding layer capable of providing high optical confinement and carrier confinement. An n-type Al0.08Ga0.92N cladding layer is grown so as to be lattice-relaxed on a (20-21)-plane GaN substrate. A GaN optical guiding layer is grown so as to be lattice-relaxed on the n-type cladding layer. An active layer, a GaN optical guiding layer, an Al0.12Ga0.88N electron blocking layer, and a GaN optical guiding layer are grown so as not to be lattice-relaxed on the optical guiding layer. A p-type Al0.08Ga0.92N cladding layer is grown so as to be lattice-relaxed on the optical guiding layer. A p-type GaN contact layer is grown so as not to be lattice-relaxed on the p-type cladding layer, to produce a semiconductor laser. Dislocation densities at junctions are larger than those at the other junctions.

摘要翻译： 提供了具有能够提供高的光学限制和载流子限制的包层的III族氮化物半导体激光二极管。 生长n型Al0.08Ga0.92N包覆层，使其在（20-21）面GaN衬底上晶格弛豫。 在n型包覆层上生长GaN光引导层以使其晶格弛豫。 生长活性层，GaN光引导层，Al0.12Ga0.88N电子阻挡层和GaN光引导层，使得在导光层上不会格子弛豫。 生长p型Al0.08Ga0.92N覆层，使其在光导层上格子弛豫。 生长p型GaN接触层，以便在p型覆层上不会发生晶格弛豫，以产生半导体激光器。 交界处的位错密度大于其他路口的位错密度。

公开(公告)号：US08476615B2

公开(公告)日：2013-07-02

申请号：US13295840

申请日：2011-11-14

申请人： Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

发明人： Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

IPC分类号： H01L29/06

CPC分类号： H01L33/16 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/34333

摘要： A GaN-based semiconductor light emitting device 11a includes a substrate 13 composed of a GaN-based semiconductor having a primary surface 13a tilting from the c-plane toward the m-axis at a tilt angle α of more than or equal to 63 degrees and less than 80 degrees, a GaN-based semiconductor epitaxial region 15, an active layer 17, an electron blocking layer 27, and a contact layer 29. The active layer 17 is composed of a GaN-based semiconductor containing indium. The substrate 13 has a dislocation density of 1×107 cm−2 or less. In the GaN-based semiconductor light emitting device 11a provided with the active layer containing indium, a decrease in quantum efficiency under high current injection can be moderated.

摘要翻译： GaN基半导体发光器件11a包括由GaN基半导体构成的衬底13，该GaN基半导体具有从c面朝向m轴倾斜角度α大于或等于63度的主表面13a;以及 低于80度的GaN基半导体外延区域15，有源层17，电子阻挡层27和接触层29.有源层17由包含铟的GaN基半导体构成。 基板13的位错密度为1×10 7 cm -2以下。 在具有含有铟的有源层的GaN系半导体发光元件11a中，能够缓和高电流注入时的量子效率的降低。

公开(公告)号：US08445925B2

公开(公告)日：2013-05-21

申请号：US13434230

申请日：2012-03-29

申请人： Takahisa Yoshida ,  Yohei Enya ,  Takashi Kyono ,  Masaki Ueno

发明人： Takahisa Yoshida ,  Yohei Enya ,  Takashi Kyono ,  Masaki Ueno

IPC分类号： H01L33/00 ,  H01L29/201

CPC分类号： H01S5/4087 ,  B82Y20/00 ,  H01L25/0753 ,  H01L27/153 ,  H01L2924/0002 ,  H01S5/0217 ,  H01S5/2009 ,  H01S5/2063 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/34333 ,  H01L2924/00

摘要： A semiconductor optical device includes: a group III nitride semiconductor substrate having a primary surface of a first orientation; a first group III nitride semiconductor laminate including a first active layer disposed on a first region of the primary surface; a group III nitride semiconductor thin film having a surface, which has a second orientation different from the first orientation, disposed on a second region, the second region being different from the first region; a junction layer provided between the second region and the group III nitride semiconductor thin film; and a second group III nitride semiconductor laminate including a second active layer and disposed on the surface of the group III nitride semiconductor thin film. The first and second active layers include first and second well layers containing In, respectively, and the emission wavelengths of the first and second well layers are different from each other.

摘要翻译： 半导体光学器件包括：具有第一取向的主表面的III族氮化物半导体衬底; 包括设置在所述主表面的第一区域上的第一有源层的第一III族氮化物半导体层叠体; 具有设置在第二区域上的具有与所述第一取向不同的第二取向的表面的III族氮化物半导体薄膜，所述第二区域与所述第一区域不同; 设置在第二区域和III族氮化物半导体薄膜之间的结层; 以及包括第二有源层并且设置在III族氮化物半导体薄膜的表面上的第二III族氮化物半导体层叠体。 第一和第二有源层包括分别包含In的第一阱层和第二阱层，并且第一阱层和第二阱层的发射波长彼此不同。

公开(公告)号：US08415707B2

公开(公告)日：2013-04-09

申请号：US12834977

申请日：2010-07-13

申请人： Shinji Tokuyama ,  Masaki Ueno ,  Masahiro Adachi ,  Takashi Kyono ,  Takamichi Sumitomo ,  Koji Katayama ,  Yoshihiro Saito

发明人： Shinji Tokuyama ,  Masaki Ueno ,  Masahiro Adachi ,  Takashi Kyono ,  Takamichi Sumitomo ,  Koji Katayama ,  Yoshihiro Saito

IPC分类号： H01L33/00

CPC分类号： H01L21/28575 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/32 ,  H01L33/40

摘要： A Group III nitride semiconductor device has a semiconductor region, a metal electrode, and a transition layer. The semiconductor region has a surface comprised of a Group III nitride crystal. The semiconductor region is doped with a p-type dopant. The surface is one of a semipolar surface and a nonpolar surface. The metal electrode is provided on the surface. The transition layer is formed between the Group III nitride crystal of the semiconductor region and the metal electrode. The transition layer is made by interdiffusion of a metal of the metal electrode and a Group III nitride of the semiconductor region.

摘要翻译： III族氮化物半导体器件具有半导体区域，金属电极和过渡层。 半导体区域具有由III族氮化物晶体组成的表面。 半导体区域掺杂有p型掺杂剂。 表面是半极性表面和非极性表面之一。 金属电极设置在表面上。 在半导体区域的III族氮化物晶体和金属电极之间形成过渡层。 过渡层是通过金属电极的金属和半导体区域的III族氮化物的相互扩散而制成的。

公开(公告)号：US08361885B2

公开(公告)日：2013-01-29

申请号：US13300220

申请日：2011-11-18

申请人： Yusuke Yoshizumi ,  Shimpei Takagi ,  Takatoshi Ikegami ,  Masaki Ueno ,  Koji Katayama

发明人： Yusuke Yoshizumi ,  Shimpei Takagi ,  Takatoshi Ikegami ,  Masaki Ueno ,  Koji Katayama

IPC分类号： H01L21/00

CPC分类号： H01S5/3202 ,  B82Y20/00 ,  G01N21/62 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/1085 ,  H01S5/20 ,  H01S5/2009 ,  H01S5/34333

摘要： A method of fabricating group-III nitride semiconductor laser device includes: preparing a substrate comprising a hexagonal group-III nitride semiconductor and having a semipolar principal surface; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, where the laser structure includes a semiconductor region and the substrate, where the semiconductor region is formed on the semipolar principal surface; scribing a first surface of the substrate product in a direction of an a-axis of the hexagonal group-III nitride semiconductor to form first and second scribed grooves; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar.

摘要翻译： 制造III族氮化物半导体激光器件的方法包括：制备包括六方晶III-III族氮化物半导体并具有半极性主表面的衬底; 形成具有激光结构的基板产品，阳极电极和阴极电极，其中所述激光器结构包括半导体区域和所述基板，其中所述半导体区域形成在所述半极性主表面上; 在六方晶III族氮化物半导体的a轴的方向上刻划基板产品的第一表面以形成第一和第二划线槽; 并且通过压靠衬底产品的第二表面进行衬底产品的分解，以形成另一衬底产品和激光棒。

公开(公告)号：US08357946B2

公开(公告)日：2013-01-22

申请号：US13189194

申请日：2011-07-22

申请人： Takashi Kyono ,  Yusuke Yoshizumi ,  Yohei Enya ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo

发明人： Takashi Kyono ,  Yusuke Yoshizumi ,  Yohei Enya ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo

IPC分类号： H01L27/15

CPC分类号： H01L21/02389 ,  B82Y20/00 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/06 ,  H01L33/18 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2301/173

摘要： Provided is a nitride semiconductor light emitting device including a light emitting layer above a GaN support base with a semipolar surface and allowing for suppression of reduction in luminous efficiency due to misfit dislocations. A nitride semiconductor light emitting device 11 has a support base 13 comprised of a hexagonal gallium nitride, an n-type gallium nitride-based semiconductor layer 15 including an InX1AlY1Ga1-X1-Y1N (0

摘要翻译： 提供了一种氮化物半导体发光器件，其包括具有半极性表面的GaN支撑基底上方的发光层，并且允许抑制由于失配位错引起的发光效率的降低。 氮化物半导体发光器件11具有由六方晶系氮化镓构成的支撑基体13，包含InX1AlY1Ga1-X1-Y1N（0