公开(公告)号：US08541733B2

公开(公告)日：2013-09-24

申请号：US13087101

申请日：2011-04-14

申请人： Rui Kurihara ,  Takahiro Kawashima

发明人： Rui Kurihara ,  Takahiro Kawashima

IPC分类号： H03F3/08 ,  H01J40/14 ,  H03F3/45 ,  H03F3/28

CPC分类号： G11B7/126 ,  G11B7/005 ,  H01S5/06832

摘要： The invention provides a laser light detection circuit that prevents a peak output occurring when the circuit switches between the operation stop mode and the operation mode so as to prevent the breakdown or malfunction of the next-connected circuit. A laser light detection circuit has a differential amplifier that amplifies and outputs a signal corresponding to the intensity of laser light, a drive transistor having a base to which the output of the differential amplifier is applied, a second constant-current source connected to the emitter of the drive transistor, an output transistor having a base connected to the emitter of the drive transistor, a bypass transistor connected between the emitter of the drive transistor and the ground, and a control circuit. The control circuit forms a bypass current route from the second constant-current source to the ground through the bypass transistor by turning on the bypass transistor when the circuit switches from the operation stop mode to the operation mode.

摘要翻译： 本发明提供了一种激光检测电路，其防止当电路在操作停止模式和操作模式之间切换时出现峰值输出，以防止下一个连接电路的故障或故障。 激光检测电路具有放大并输出与激光强度相对应的信号的差分放大器，具有施加了差分放大器的输出的基极的驱动晶体管，连接到发射极的第二恒流源 驱动晶体管的输出晶体管，其基极连接到驱动晶体管的发射极，连接在驱动晶体管的发射极与地之间的旁路晶体管和控制电路。 当电路从操作停止模式切换到操作模式时，通过接通旁路晶体管，控制电路通过旁路晶体管形成从第二恒定电流源到地的旁路电流路径。

公开(公告)号：US08486788B2

公开(公告)日：2013-07-16

申请号：US13162310

申请日：2011-06-16

申请人： Junko Iwanaga ,  Takeshi Takagi ,  Yoshihiko Kanzawa ,  Haruyuki Sorada ,  Tohru Saitoh ,  Takahiro Kawashima

发明人： Junko Iwanaga ,  Takeshi Takagi ,  Yoshihiko Kanzawa ,  Haruyuki Sorada ,  Tohru Saitoh ,  Takahiro Kawashima

IPC分类号： H01L21/336

CPC分类号： H01L29/785 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/66795

摘要： A semiconductor device includes: a semiconductor substrate in which a trench is formed; a source region and a drain region each of which is buried in the trench and contains an impurity of the same conductive type; a semiconductor FIN buried in the trench and provided between the source and drain regions; a gate insulating film provided on a side surface of the semiconductor FIN as well as the upper surface of the semiconductor FIN; and a gate electrode formed on the gate insulating film.

摘要翻译： 一种半导体器件包括：形成沟槽的半导体衬底; 源极区域和漏极区域，每个源极区域和漏极区域被埋在沟槽中并且包含相同导电类型的杂质; 掩埋在沟槽中并设置在源区和漏区之间的半导体FIN; 设置在半导体FIN的侧表面上的栅极绝缘膜以及半导体FIN的上表面; 以及形成在栅极绝缘膜上的栅电极。

公开(公告)号：US08368364B2

公开(公告)日：2013-02-05

申请号：US12999932

申请日：2009-06-15

申请人： Hideki Asuke ,  Hideharu Takano ,  Mamoru Tsuruya ,  Masayoshi Yamamoto ,  Takahiro Kawashima ,  Shigeyuki Funabiki

发明人： Hideki Asuke ,  Hideharu Takano ,  Mamoru Tsuruya ,  Masayoshi Yamamoto ,  Takahiro Kawashima ,  Shigeyuki Funabiki

IPC分类号： G05F1/613 ,  G05F1/24

CPC分类号： H02M3/1584 ,  H02M1/34 ,  H02M2001/348

摘要： In order to achieve an object to reduce a surge voltage and suppress noise generation, the present invention provides a DC-DC converter with a snubber circuit, which boosts a voltage Vi of a DC power supply. The snubber circuit includes: a series circuit connected to both ends of a smoothing capacitor Co and including a snubber capacitor Cs and a snubber resistor Rs; a snubber diode Ds1 connected to a node at which the snubber capacitor Cs and the snubber resistor Rs are connected, and to a node at which a reactor Lr1 and an additional winding 1b of a transformer T1 are connected; and a snubber diode Ds2 connected to the node at which the snubber capacitor Cs and the snubber resistor Rs are connected, and to a node at which a reactor Lr2 and an additional winding 2b of a transformer T2 are connected.

摘要翻译： 为了实现降低浪涌电压并抑制噪声产生的目的，本发明提供一种具有缓冲电路的DC-DC转换器，其提高DC电源的电压Vi。 缓冲电路包括：连接到平滑电容器Co的两端并包括缓冲电容器Cs和缓冲电阻器Rs的串联电路; 连接到缓冲电容器Cs和缓冲电阻器Rs连接的节点的缓冲二极管Ds1以及与变压器T1的电抗器Lr1和附加绕组1b连接的节点; 以及连接到缓冲电容器Cs和缓冲电阻器Rs所连接的节点的缓冲二极管Ds2以及与变压器T2的电抗器Lr2和附加绕组2b连接的节点。

公开(公告)号：US08368049B2

公开(公告)日：2013-02-05

申请号：US13399521

申请日：2012-02-17

申请人： Takahiro Kawashima ,  Tohru Saitoh ,  Kenji Harada ,  Norishige Nanai ,  Takayuki Takeuchi

发明人： Takahiro Kawashima ,  Tohru Saitoh ,  Kenji Harada ,  Norishige Nanai ,  Takayuki Takeuchi

IPC分类号： H01L29/06 ,  H01L31/00

CPC分类号： H01L29/0673 ,  H01L29/66772 ,  H01L29/78696

摘要： A nanowire transistor according to the present invention includes: at least one nanowire 13 including a core portion 13a that functions as a channel region and an insulating shell portion 13b that covers the surface of the core portion 13a; source and drain electrodes 14 and 15, which are connected to the nanowire 13; and a gate electrode 21 for controlling conductivity in at least a part of the core portion 13a of the nanowire 13. The core portion 13a is made of semiconductor single crystals including Si and has a cross section with a curved profile on a plane that intersects with the longitudinal axis thereof. The insulating shell portion 13b is made of an insulator including Si and functions as at least a portion of a gate insulating film.

摘要翻译： 根据本发明的纳米线晶体管包括：至少一个纳米线13，其包括用作沟道区的芯部13a和覆盖芯部13a的表面的绝缘壳部13b; 源极和漏极14和15，其连接到纳米线13; 以及用于控制纳米线13的芯部13a的至少一部分的导电性的栅电极21.芯部13a由包含Si的半导体单晶制成，并且在与 其纵轴。 绝缘外壳部分13b由包括Si的绝缘体制成，并且起到至少一部分栅极绝缘膜的作用。

公开(公告)号：US08143144B2

公开(公告)日：2012-03-27

申请号：US12451898

申请日：2008-06-04

申请人： Takahiro Kawashima ,  Tohru Saitoh

发明人： Takahiro Kawashima ,  Tohru Saitoh

IPC分类号： H01L21/20 ,  H01L29/06

CPC分类号： H01L21/02653 ,  B82Y10/00 ,  B82Y30/00 ,  C30B11/12 ,  C30B25/00 ,  C30B29/06 ,  C30B29/40 ,  C30B29/60 ,  H01L21/02521 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/02656 ,  H01L27/3262 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/775 ,  H01L33/18 ,  Y10S438/962

摘要： A method for fabricating a semiconductor nanowire that has first and second regions is provided. A catalyst particle is put on a substrate. A first source gas is introduced, thereby growing the first region from the catalyst particle via a vapor-liquid-solid phase growth. A protective coating is formed on a sidewall of the first region, and a second source gas is introduced to grow the second region extending from the first region via the liquid-solid-phase growth.

摘要翻译： 提供一种制造具有第一和第二区域的半导体纳米线的方法。 将催化剂颗粒放在基材上。 引入第一源气体，从而通过气 - 液 - 固相生长从催化剂颗粒生长第一区域。 在第一区域的侧壁上形成保护涂层，并且引入第二源气体以通过液相 - 固相生长从第一区域延伸出第二区域。

公开(公告)号：US20120016261A1

公开(公告)日：2012-01-19

申请号：US13257721

申请日：2010-03-19

申请人： Makoto Ishida ,  Takeshi Kawano ,  Takahiro Kawashima ,  Kuniharu Takei

发明人： Makoto Ishida ,  Takeshi Kawano ,  Takahiro Kawashima ,  Kuniharu Takei

IPC分类号： A61B10/02 ,  H01L21/28 ,  H01L23/48

CPC分类号： A61B5/04001 ,  A61B5/0017 ,  A61B5/0084 ,  A61B10/0233 ,  A61B2562/028 ,  B81B2201/055 ,  B81C1/00111 ,  H01L2924/0002 ,  H01L2924/00

摘要： A hollow microtube structure capable of being used as a minimally invasive electrode, a production method thereof, and a biopsy device using the hollow microtube structure. The hollow microtube structure includes a semiconductor substrate and at least one hollow tube formed on a surface of the semiconductor substrate. The hollow tube includes a metal coating film layer on the inner surface and an electrically insulating coating film layer on the outer surface. The semiconductor substrate includes a through hole communicated with an interior of a hollow tube at a location where the hollow tube is formed. The production method includes an etching, a sacrificial layer forming, a metal coating film layer forming, an electrically insulating coating film layer forming, a tip portion removing, and a piercing. The biopsy device can be provided on a substrate side of the hollow microtube structure with at least one of an electric signal transmitter, an optical signal generator, a chemical fluid injector, an electrical measuring device, a chemical measuring device, and an optical measuring device.

摘要翻译： 能够用作微创电极的中空微管结构，其制造方法和使用中空微管结构的活检装置。 中空微管结构包括半导体衬底和形成在半导体衬底的表面上的至少一个中空管。 中空管包括在内表面上的金属涂膜层和外表面上的电绝缘涂膜层。 半导体衬底包括在形成中空管的位置处与中空管的内部连通的通孔。 制造方法包括蚀刻，牺牲层形成，金属涂膜层形成，电绝缘涂膜层形成，尖端部分去除和穿孔。 活检装置可以在电信号发送器，光信号发生器，化学流体注入器，电测量装置，化学测量装置和光学测量装置中的至少一个上设置在中空微管结构的基板侧上 。

公开(公告)号：US08000182B2

公开(公告)日：2011-08-16

申请号：US11863019

申请日：2007-09-27

申请人： Masashi Arai ,  Takahiro Kawashima

发明人： Masashi Arai ,  Takahiro Kawashima

IPC分类号： G11B7/00

CPC分类号： G11B7/13

摘要： An integrated circuit for optical disc comprising for each of light-receiving surfaces: an operational amplifier including inverting and noninverting input terminals receiving first and second input voltages, and output terminal receiving output voltage; a feedback resistor connected between the inverting input and output terminals; a photodiode connected between one power supply line of the first and second power supply lines and the inverting input terminal to generate current corresponding to reflected light; a capacitor connected between the one power supply line and the noninverting input terminal; and an input resistor connected between reference power source and the noninverting input terminal, further comprising: an adder adding voltages corresponding to the output voltages to generate RF signal, capacitance of the capacitor and resistance value of the input resistor being determined in accordance with capacitance of parasitic capacitor connected in parallel with the photodiode and resistance value of the feedback resistor.

摘要翻译： 一种用于光盘的集成电路，包括用于光接收表面的每一个;运算放大器，包括接收第一和第二输入电压的反相和同相输入端，以及输出端接收输出电压; 连接在反相输入和输出端子之间的反馈电阻器; 连接在第一和第二电源线的一个电源线和反相输入端之间的光电二极管，以产生对应于反射光的电流; 连接在所述一个电源线和所述同相输入端子之间的电容器; 以及连接在参考电源和同相输入端之间的输入电阻器，还包括：加法器，相应于所述输出电压产生RF信号，所述电容器的电容值和所述输入电阻器的电阻值根据 寄生电容与光电二极管并联，反馈电阻的电阻值。

公开(公告)号：US20100019743A1

公开(公告)日：2010-01-28

申请号：US12179036

申请日：2008-07-24

申请人： Hideki Asuke ,  Hideharu Takano ,  Namoru Tsuruya ,  Masashi Ochiai ,  Masayoshi Yamamoto ,  Takahiro Kawashima ,  Shigeyuki Funabiki

发明人： Hideki Asuke ,  Hideharu Takano ,  Namoru Tsuruya ,  Masashi Ochiai ,  Masayoshi Yamamoto ,  Takahiro Kawashima ,  Shigeyuki Funabiki

IPC分类号： G05F1/46

CPC分类号： H02M3/1584

摘要： The present invention provides a DC-DC converter including a first series circuit connected to both ends of a first switch and formed of a winding of a first transformer, a first reactor, a first diode, and a smoothing capacitor, a second diode connected to a connection point of a primary winding of the first transformer, the winding of the first transformer and the first switch, and to one end of the smoothing capacitor, a second series circuit connected to both ends of a second switch and formed of a winding of a second transformer, a second reactor, a third diode, and the smoothing capacitor, a fourth diode connected to a connection point of a primary winding of the second transformer, the winding of the second transformer and the second switch, and to the one end of the smoothing capacitor, a third reactor connected to both ends of a series circuit of a secondary winding of the first transformer and a secondary winding of the second transformer, and a control circuit which alternately turns on the first switch and the second switch every ½ cycle, turns off the first switch during an on-period of the second switch, and turns off the second switch during an on-period of the first switch.

摘要翻译： 本发明提供了一种DC-DC转换器，包括连接到第一开关两端并由第一变压器的绕组，第一电抗器，第一二极管和平滑电容器构成的第一串联电路，第二二极管连接到 第一变压器的初级绕组的连接点，第一变压器的绕组和第一开关的连接点以及平滑电容器的一端，连接到第二开关的两端的第二串联电路， 第二变压器，第二电抗器，第三二极管和平滑电容器，连接到第二变压器的初级绕组的连接点的第四二极管，第二变压器的绕组和第二开关的一端， 的平滑电容器，连接到第一变压器的次级绕组的串联电路的两端的第三电抗器和第二变压器的次级绕组，以及控制电路， 每½周期开启第一个开关和第二个开关，在第二个开关的导通期间关闭第一个开关，并在第一个开关的导通期间关闭第二个开关。

公开(公告)号：US07629629B2

公开(公告)日：2009-12-08

申请号：US10588605

申请日：2005-12-21

申请人： Tohru Saitoh ,  Takahiro Kawashima

发明人： Tohru Saitoh ,  Takahiro Kawashima

IPC分类号： H01L29/76

CPC分类号： H01L29/775 ,  B82Y10/00 ,  H01L27/1214 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/78618 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/78696 ,  Y10S977/762 ,  Y10S977/938

摘要： A nanowire (100) according to the present invention includes a plurality of contact regions (10a, 10b) and at least one channel region (12), which is connected to the contact regions (10a, 10b). The channel region (12) is made of a first semiconductor material and the surface of the channel region (12) is covered with an insulating layer that has been formed selectively on the channel region (12). The contact regions (10a, 10b) are made of a second semiconductor material, which is different from the first semiconductor material for the channel region (12), and at least the surface of the contact regions (10a, 10b) includes a conductive portion.

摘要翻译： 根据本发明的纳米线（100）包括连接到接触区域（10a，10b）的多个接触区域（10a，10b）和至少一个沟道区域（12）。 通道区域（12）由第一半导体材料制成，沟道区域（12）的表面被选择性地形成在沟道区域（12）上的绝缘层覆盖。 接触区域（10a，10b）由与沟道区域（12）的第一半导体材料不同的第二半导体材料制成，并且至少接触区域（10a，10b）的表面包括导电部分 。

公开(公告)号：US07465969B2

公开(公告)日：2008-12-16

申请号：US11450474

申请日：2006-06-12

申请人： Teruhito Ohnishi ,  Koichiro Yuki ,  Tsuneichiro Sano ,  Tohru Saitoh ,  Ken Idota ,  Takahiro Kawashima ,  Shigeki Sawada

发明人： Teruhito Ohnishi ,  Koichiro Yuki ,  Tsuneichiro Sano ,  Tohru Saitoh ,  Ken Idota ,  Takahiro Kawashima ,  Shigeki Sawada

IPC分类号： H01L21/336 ,  H01L21/8234

CPC分类号： H01L29/66242 ,  H01L29/7378

摘要： A bipolar transistor includes a Si single crystalline layer serving as a collector, a single crystalline Si/SiGeC layer and a polycrystalline Si/SiGeC layer which are formed on the Si single crystalline layer, an oxide film having an emitter opening portion, an emitter electrode, and an emitter layer. An intrinsic base layer is formed on the single crystalline Si/SiGeC layer, part of the single crystalline Si/SiGeC layer, the polycrystalline Si/SiGeC layer and the Co silicide layer together form an external base layer. The thickness of the emitter electrode is set so that boron ions implanted into the emitter electrode and diffused therein do not reach an emitter-base junction portion.

摘要翻译： 双极晶体管包括形成在Si单晶层上的Si单结晶层，单晶Si / SiGeC层和多晶Si / SiGeC层，具有发射极开口部分的氧化膜，发射极 ，和发射极层。 在单晶Si / SiGeC层上形成本征基层，单晶Si / SiGeC层的一部分，多晶Si / SiGeC层和Co硅化物层一起形成外部基极层。 发射电极的厚度被设定为使得注入发射电极并在其中扩散的硼离子不会到达发射极 - 基极接合部分。