公开(公告)号：US20090304732A1

公开(公告)日：2009-12-10

申请号：US11575245

申请日：2005-09-07

Applicant: Gregory Buck ,  Luis Shozo Ozaki ,  Yingping Wang ,  Ping Xu ,  Myma Garcia Serrano ,  Patrico A. Manque ,  Jaoa Marcelo Pereira Alves ,  Daniela Puiu

Inventor： Gregory Buck ,  Luis Shozo Ozaki ,  Yingping Wang ,  Ping Xu ,  Myma Garcia Serrano ,  Patrico A. Manque ,  Jaoa Marcelo Pereira Alves ,  Daniela Puiu

IPC: A61K39/002 ,  C07K14/44 ,  C07H21/04 ,  A61K31/711 ,  C12Q1/68 ,  C40B40/06 ,  C40B40/10

CPC classification number: C12Q1/6893 ,  A61K39/00 ,  C07K14/44 ,  G01N2333/44 ,  Y02A50/488 ,  Y02A50/489

Abstract: Cryptosporidium hominis genes and gene products are provided. The genes and gene products are useful for chemotherapeutic, immunotherapeutic, immunoprophylactic and diagnostic applications.

Abstract translation: 提供人隐球菌基因和基因产物。 基因和基因产物可用于化学治疗，免疫治疗，免疫预防和诊断应用。

公开(公告)号：US20090253854A1

公开(公告)日：2009-10-08

申请号：US12353514

申请日：2009-01-14

Applicant: Ping Xu ,  Jack Hegenbarth

Inventor： Ping Xu ,  Jack Hegenbarth

IPC: C08L27/18 ,  C08F214/26

CPC classification number: C08L29/10 ,  C08K3/36 ,  C08L27/12 ,  C08L27/18 ,  C08L33/22 ,  C08L2205/02 ,  C08L2666/04

Abstract: High purity perfluoroelastomer composites and processes for producing the same are provided. High purity composites may be formed from compositions comprising a crosslinkable fluoroelastomer terpolymer of TFE, PAVE, and CNVE, and functionalized PTFE, which may be crosslinked to form crosslinked composites having low metal content and low compression set. Emulsion mixtures for forming the high purity composites are also provided.

Abstract translation: 提供了高纯度全氟弹性体复合材料及其制备方法。 高纯度复合材料可以由包含TFE，PAVE和CNVE的交联性含氟弹性体三元共聚物和官能化PTFE的组合物形成，其可以交联以形成具有低金属含量和低压缩永久变形的交联复合材料。 还提供了用于形成高纯度复合材料的乳液混合物。

公开(公告)号：US07598183B2

公开(公告)日：2009-10-06

申请号：US11533505

申请日：2006-09-20

Applicant: Ping Xu ,  Christopher Dennis Bencher

Inventor： Ping Xu ,  Christopher Dennis Bencher

IPC: H01L21/00

CPC classification number: H01L21/76829 ,  C23C16/30 ,  C23C16/45523 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76835

Abstract: A method is provided for processing a substrate surface by delivering a first gas mixture comprising a first organosilicon compound, a first oxidizing gas, and one or more hydrocarbon compounds into a chamber at deposition conditions sufficient to deposit a first low dielectric constant film on the substrate surface. A second gas mixture having a second organosilicon compound and a second oxidizing gas is delivered into the chamber at deposition conditions sufficient to deposit a second low dielectric constant film on the first low dielectric constant film. The flow rate of the second oxidizing gas into the chamber is increased, and the flow rate of the second organosilicon compound into the chamber is decreased to deposit an oxide rich cap on the second low dielectric constant film.

Abstract translation: 提供了一种通过将包含第一有机硅化合物，第一氧化气体和一种或多种烃化合物的第一气体混合物输送到室中的方法来处理衬底表面，该沉积条件足以在衬底上沉积第一低介电常数膜 表面。 具有第二有机硅化合物和第二氧化气体的第二气体混合物在足以在第一低介电常数膜上沉积第二低介电常数膜的沉积条件下被输送到室中。 进入室内的第二氧化气体的流量增加，第二有机硅化合物进入室的流量减少，从而在第二低介电常数膜上沉积氧化物富集盖。

公开(公告)号：US20080052791A1

公开(公告)日：2008-02-28

申请号：US11668356

申请日：2007-01-29

Applicant: Ping Xu ,  Jonathan Mannas ,  Marilyn Roossinck

Inventor： Ping Xu ,  Jonathan Mannas ,  Marilyn Roossinck

IPC: C12N15/00

CPC classification number: C12N15/8273 ,  A01H3/00 ,  A01N63/00 ,  A01N63/02

Abstract: The invention provides methods for enhancing drought tolerance in a plant, by infecting the plant with a plant virus, or infectious material derived from a plant virus. The plant thereby displays fewer, less severe, and/or delayed symptoms of dehydration. The reduction in symptoms allows for improved plant growth.

Abstract translation: 本发明提供了通过用植物病毒感染植物或从植物病毒衍生的感染性物质来增强植物耐旱性的方法。 因此，该植物显示较少，较不严重和/或延迟的脱水症状。 症状的减少允许改善植物生长。

公开(公告)号：US07151053B2

公开(公告)日：2006-12-19

申请号：US11118678

申请日：2005-04-28

Applicant: Ju-Hyung Lee ,  Ping Xu ,  Shankar Venkataraman ,  Li-Qun Xia ,  Fei Han ,  Ellie Yieh ,  Srinivas D. Nemani ,  Kangsub Yim ,  Farhad K. Moghadam ,  Ashok K. Sinha ,  Yi Zheng

Inventor： Ju-Hyung Lee ,  Ping Xu ,  Shankar Venkataraman ,  Li-Qun Xia ,  Fei Han ,  Ellie Yieh ,  Srinivas D. Nemani ,  Kangsub Yim ,  Farhad K. Moghadam ,  Ashok K. Sinha ,  Yi Zheng

IPC: H01L21/4763 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01L21/76834 ,  C23C16/30 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829

Abstract: Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.

Abstract translation: 提供了用于沉积氧掺杂介电层的方法。 氧掺杂介电层可用于阻挡层或硬掩模。 在一个方面，提供了一种处理衬底的方法，包括将衬底定位在处理室中，将包含含氧有机硅化合物，二氧化碳或其组合的处理气体和无氧有机硅化合物引入到处理 并且使所述处理气体反应以在所述衬底上沉积掺杂氧的电介质材料，其中所述介电材料的氧含量为约15原子％或更低。 氧掺杂的电介质材料可以用作镶嵌或双镶嵌应用中的阻挡层。

公开(公告)号：US07034409B2

公开(公告)日：2006-04-25

申请号：US10718887

申请日：2003-11-21

Applicant: Ping Xu ,  Li-Qun Xia ,  Larry A. Dworkin ,  Mehul Naik

Inventor： Ping Xu ,  Li-Qun Xia ,  Larry A. Dworkin ,  Mehul Naik

IPC: H01L29/12

CPC classification number: H01L21/0234 ,  C23C16/325 ,  C23C16/401 ,  G03F7/16 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3148 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76832 ,  Y10S257/914

Abstract: A method is provided for processing a substrate including treating a surface of a dielectric layer comprising silicon and carbon by exposing the dielectric layer comprising silicon and carbon to a plasma of an inert gas, and depositing a photoresist on the dielectric layer comprising silicon and carbon. The dielectric layer may comprise a first dielectric layer comprising silicon, carbon, and nitrogen, and a second layer of nitrogen-free silicon and carbon containing material in situ on the first dielectric layer, and a third dielectric layer comprising silicon, oxygen, and carbon on the second dielectric layer.

公开(公告)号：US20050273887A1

公开(公告)日：2005-12-08

申请号：US11053595

申请日：2005-02-08

Applicant: Ping Xu ,  Stephanie Rogers ,  Marilyn Roossinck

Inventor： Ping Xu ,  Stephanie Rogers ,  Marilyn Roossinck

IPC: A01H1/00 ,  A01H5/00 ,  A01H5/10 ,  C12N5/04 ,  C12N15/82

CPC classification number: C12N15/8283 ,  C12N15/8261 ,  C12N15/8271 ,  C12N15/8273 ,  C12N15/829 ,  Y02A40/146

Abstract: The invention provides improved plants, and cells, seeds, fruits, tissues and progeny thereof. Plants comprise constructs that encode a heterologous anti-apoptotic protein, the expression of which provide resistance to infection, such as viruses, and environmental insult, such as temperature extremes. Methods for the production of such plants and their propagation also are provided.

Abstract translation: 本发明提供改良的植物，细胞，种子，水果，组织及其后代。 植物包含编码异源抗凋亡蛋白的构建体，其表达对感染例如病毒和环境污染如极端温度具有抗性。 还提供了用于生产这种植物及其繁殖的方法。

公开(公告)号：US06734102B2

公开(公告)日：2004-05-11

申请号：US10252195

申请日：2002-09-23

Applicant: Sudha Rathi ,  Ping Xu ,  Judy Huang

Inventor： Sudha Rathi ,  Ping Xu ,  Judy Huang

IPC: H01L23205

CPC classification number: H01L21/32136 ,  B08B7/0035 ,  C23C16/0245 ,  C23G5/00 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/76807 ,  H01L21/76883 ,  Y10S438/907

Abstract: The present invention provides an in situ plasma reducing process to reduce oxides or other contaminants, using a compound of nitrogen and hydrogen, typically ammonia, at relatively low temperatures prior to depositing a subsequent layer thereon. The adhesion characteristics of the layers are improved and oxygen presence is reduced compared to the typical physical sputter cleaning process of an oxide layer. This process may be particularly useful for the complex requirements of a dual damascene structure, especially with copper applications.

公开(公告)号：US06699784B2

公开(公告)日：2004-03-02

申请号：US10096503

申请日：2002-03-12

Applicant: Li-Qun Xia ,  Ping Xu ,  Louis Yang ,  Tzu-Fang Huang ,  Wen H. Zhu

Inventor： Li-Qun Xia ,  Ping Xu ,  Louis Yang ,  Tzu-Fang Huang ,  Wen H. Zhu

IPC: H01L2131

CPC classification number: H01L21/31144 ,  C23C16/30 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31138 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/31633 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829

Abstract: A method for depositing a silicon oxycarbide hard mask on a low k dielectric layer is provided. Substrates containing a silicon oxycarbide hard mask on a low k dielectric layer are also disclosed. The silicon oxycarbide hard mask may be formed by a processing gas comprising a siloxane.

Abstract translation: 提供了一种在低k电介质层上沉积碳氧化硅硬掩模的方法。 还公开了在低k电介质层上含有碳氧化硅硬掩模的衬底。 硅碳化硅硬掩模可以由包含硅氧烷的处理气体形成。

公开(公告)号：US6094074A

公开(公告)日：2000-07-25

申请号：US116645

申请日：1998-07-16

Applicant: Kuang-Kai Chi ,  Ping Xu

Inventor： Kuang-Kai Chi ,  Ping Xu

IPC: H03K19/086 ,  H03K19/094 ,  H03K19/0944 ,  H03K19/21

CPC classification number: H03K19/215 ,  H03K19/09432

Abstract: A common mode logic (CML) circuit having an improved bias circuit and an active MOS load operating exclusively in the triode region to provide improved performance characteristics including a high speed of operation. The bias circuit of the CML circuit comprises a pair of MOS transistors, one of which has an aspect ratio (W.sub.P /L.sub.P) and the other of which has an aspect ratio (W.sub.P /L.sub.P)/n, wherein 1

Abstract translation: 一种共模逻辑（CML）电路，其具有改进的偏置电路和仅在三极管区域中工作的有源MOS负载，以提供包括高速操作的改进的性能特性。 CML电路的偏置电路包括一对MOS晶体管，其中一个具有纵横比（WP / LP），另一个具有纵横比（WP / LP）/ n，其中1