公开(公告)号：US20090278144A1

公开(公告)日：2009-11-12

申请号：US12085564

申请日：2006-11-28

申请人： Masayuki Sonobe ,  Norikazu Ito ,  Mitsuhiko Sakai

发明人： Masayuki Sonobe ,  Norikazu Ito ,  Mitsuhiko Sakai

IPC分类号： H01L33/00

CPC分类号： H01S5/18358 ,  B82Y20/00 ,  H01L33/105 ,  H01L33/32 ,  H01S5/34333

摘要： There is provided a nitride semiconductor light emitting device having a light reflection layer capable of preventing reflectivity from lowering and luminance from lowering due to deterioration of quality of an active layer. A nitride semiconductor laser includes at least a light emitting layer forming portion (3) provided on a first light reflection layer (2) provided on a substrate (1). The first light reflection layer (2) is formed with laminating a low refractivity layer (21) and a high refractivity layer (22) which have a different refractivity from each other, and the low refractivity layer (21) of the first light reflection layer is formed with a single layer structure of an AlxGa1-xN layer (0≦x≦1), and the high refractivity layer (22) of the first light reflection layer is formed with a multi layer structure formed by laminating alternately an AlyGa1-yN layer (0≦y≦0.5 and y

摘要翻译： 提供一种氮化物半导体发光器件，其具有能够防止由于有源层的质量劣化而引起的反射率降低和降低亮度的光反射层。 氮化物半导体激光器至少包括设置在设置在基板（1）上的第一光反射层（2）上的发光层形成部（3）。 第一光反射层（2）形成为具有彼此不同的折射率的低折射率层（21）和高折射率层（22），并且第一光反射层的低折射率层（21） 形成有Al x Ga 1-x N层（0 <= x <= 1）的单层结构，并且第一光反射层的高折射率层（22）形成有多层结构，其通过交替层叠AlyGa1 -yN层（0 <= y <= 0.5和y

公开(公告)号：US20090206357A1

公开(公告)日：2009-08-20

申请号：US11884456

申请日：2006-02-15

申请人： Norikazu Ito ,  Kazuaki Tsutsumi ,  Toshio Nishida ,  Masayuki Sonobe ,  Mitsuhiko Sakai ,  Atsushi Yamaguchi

发明人： Norikazu Ito ,  Kazuaki Tsutsumi ,  Toshio Nishida ,  Masayuki Sonobe ,  Mitsuhiko Sakai ,  Atsushi Yamaguchi

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20

摘要： There is provided a nitride semiconductor light emitting device in which a semiconductor layer is not broken easily even when a reverse voltage is applied or even in long time operation, and excellent reliability is obtained, by preventing semiconductor layers from deterioration when manufacturing a device. On a surface of a substrate (1), a semiconductor lamination portion (6) made of nitride semiconductor, including a first conductivity type layer (p-type layer (5)) and a second conductivity type layer (n-type layer (3)), is formed, a p-side electrode (8) is provided through a light transmitting conductive layer (7) thereon electrically connected to the p-type layer (5), and an n-side electrode (9) is provided electrically connected to the n-type layer (3) of the lower layer side of the semiconductor lamination portion(6). A mesa-like semiconductor lamination portion (6a) is formed by removing a part of the semiconductor lamination portion (6) around a chip by etching, and the mesa-like semiconductor lamination portion (6a) is formed such that a corner part having an angle of 90 degrees or less is rounded and has a curved line in a plan shape, thereby not to have an angle of 90 degrees or less on corner parts.

摘要翻译： 提供了一种氮化物半导体发光器件，其中即使当施加反向电压或者甚至长时间操作时，半导体层也不容易损坏，并且通过在制造器件时防止半导体层劣化，可以获得优异的可靠性。 在基板（1）的表面上，由氮化物半导体构成的包括第一导电型层（p型层（5））和第二导电型层（n型层（3））的半导体层叠部（6） ）），通过其上与p型层（5）电连接的透光导电层（7）设置p侧电极（8），并且n侧电极（9）电气地 连接到半导体层叠部分（6）的下层侧的n型层（3）。 通过蚀刻去除芯片周围的半导体层叠部分（6）的一部分形成台面状半导体层叠部（6a），并且形成台面状半导体层叠部（6a），使得具有 90度以下的角度是圆形的，并且具有平面形状的曲线，从而在角部不具有90度或更小的角度。

公开(公告)号：US20090121240A1

公开(公告)日：2009-05-14

申请号：US12083836

申请日：2006-10-19

申请人： Yukio Shakuda ,  Masayuki Sonobe ,  Norikazu Ito

发明人： Yukio Shakuda ,  Masayuki Sonobe ,  Norikazu Ito

IPC分类号： H01L33/00 ,  H01L29/205 ,  H01L21/205

CPC分类号： H01L33/12 ,  H01L21/02403 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

摘要： There is provided a nitride semiconductor device with low leakage current and high efficiency in which, while a zinc oxide based compound such as MgxZn1-xO (0≦x≦0.5) is used for a substrate, crystallinity of nitride semiconductor grown thereon is improved and film separation or cracks are prevented. The nitride semiconductor device is formed by laminating nitride semiconductor layers on a substrate (1) made of a zinc oxide based compound such as MgxZn1-xO (0≦x≦0.5). The nitride semiconductor layers include a first nitride semiconductor layer (2) made of AlyGa1-yN (0.05≦y≦0.2) which is provided in contact with the substrate (1), and nitride semiconductor layers (3) to (5) laminated on the first nitride semiconductor layer (2) so as to form a semiconductor element.

摘要翻译： 提供了一种具有低漏电流和高效率的氮化物半导体器件，其中，当将基于氧化锌的化合物如Mg x Zn 1-x O（0 <= x <= 0.5）用于衬底时，其上生长的氮化物半导体的结晶度为 防止了改进的膜分离或裂纹。 氮化物半导体器件通过在由诸如Mg x Zn 1-x O（0 <= x <= 0.5）的氧化锌基化合物制成的衬底（1）上层叠氮化物半导体层而形成。 氮化物半导体层包括与基板（1）接触地设置的Al y Ga 1-y N（0.05≤y≤0.2）和氮化物半导体层（3）〜（5）构成的第一氮化物半导体层（2） 层压在第一氮化物半导体层（2）上以形成半导体元件。

公开(公告)号：US20070278474A1

公开(公告)日：2007-12-06

申请号：US11789035

申请日：2007-04-23

申请人： Kazuaki Tsutsumi ,  Norikazu Ito ,  Masayuki Sonobe ,  Hiroaki Ohta

发明人： Kazuaki Tsutsumi ,  Norikazu Ito ,  Masayuki Sonobe ,  Hiroaki Ohta

IPC分类号： H01L31/0312

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06

摘要： A semiconductor light emitting element includes an active layer of a quantum well structure, and an n-type semiconductor layer and a p-type semiconductor layer, formed to hold the active layer therebetween. The active layer includes at least a well layer containing InGaN, and at least two barrier layers formed to hold the well layer therebetween, and containing one of InGaN and GaN. The well layer is entirely doped with one of a group IV element and a group VI element. The respective barrier layer includes a first portion closer to the p-type semiconductor layer and a second portion closer to the n-type semiconductor layer. The first portion is doped with one of the group IV element and the group VI element. The second portion is undoped.

摘要翻译： 半导体发光元件包括量子阱结构的有源层，以及形成为将活性层保持在其间的n型半导体层和p型半导体层。 有源层至少包括含有InGaN的阱层，以及形成为将阱层保持在其间并且包含InGaN和GaN中的一个的至少两个势垒层。 阱层完全掺杂有IV族元素和VI族元素之一。 各个阻挡层包括靠近p型半导体层的第一部分和靠近n型半导体层的第二部分。 第一部分掺杂有IV族元素和VI族元素之一。 第二部分是未掺杂的。

公开(公告)号：US07047903B2

公开(公告)日：2006-05-23

申请号：US10466853

申请日：2002-01-21

申请人： Norikazu Ito

发明人： Norikazu Ito

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01J37/321 ,  C23C16/509

摘要： A plasma CVD apparatus is used to form thin films of excellent uniform thickness on both surfaces of a substrate without the step of turning a substrate over, and includes two connected vacuum chambers, each of which is equipped with a plurality of electrode array layers therein, whereby at least a pair of substrate holders are transported between adjacent electrode array layers in a first vacuum chamber to form a first thin film on the one surface of substrates facing the electrode array layers, and then transported into a second vacuum chamber so that the other surface of the substrates faces to an electrode array layer to form a second thin film on the other surface.

摘要翻译： 使用等离子体CVD装置在基板的两个表面上形成具有优异均匀厚度的薄膜，而不需要使基板转动的步骤，并且包括两个连接的真空室，每个在其中装备有多个电极阵列层， 由此在第一真空室中至少一对基板保持器在相邻的电极阵列层之间传送，以在面向电极阵列层的基板的一个表面上形成第一薄膜，然后输送到第二真空室，使得另一个 基板的表面面向电极阵列层，以在另一表面上形成第二薄膜。

公开(公告)号：US06503816B2

公开(公告)日：2003-01-07

申请号：US09832860

申请日：2001-04-12

申请人： Norikazu Ito ,  Yoshimi Watabe ,  Akihisa Matsuda ,  Michio Kondo

发明人： Norikazu Ito ,  Yoshimi Watabe ,  Akihisa Matsuda ,  Michio Kondo

IPC分类号： H01L2120

CPC分类号： H01J37/321 ,  C23C16/24 ,  C23C16/509 ,  C23C16/515 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A thin film forming method and apparatus forms a thin film having an excellent thickness uniformity over a substrate, particularly a large-area substrate. The thin film forming method and apparatus includes a film forming chamber in which an inductive coupling electrode having a feeding portion and a grounding portion at its two ends is arranged, a high-frequency power source for feeding a high-frequency power to the feeding portion, and a waveform generator for amplitude-modulating the high-frequency power outputted from the high-frequency power source. The amplitude-modulated high-frequency power is fed to the inductive coupling electrode to generate a plasma so that a thin film may be formed on a substrate arranged to face the inductive coupling electrode.

摘要翻译： 薄膜形成方法和装置形成在基板，特别是大面积基板上具有优异的厚度均匀性的薄膜。 薄膜形成方法和装置包括：成膜室，其中布置有具有馈电部分和其两端的接地部分的感应耦合电极，用于将高频电力馈送到馈电部分的高频电源 以及用于对从高频电源输出的高频电力进行幅度调制的波形发生器。 将幅度调制的高频功率馈送到感应耦合电极以产生等离子体，使得可以在布置成面对感应耦合电极的基板上形成薄膜。

公开(公告)号：US06253232B1

公开(公告)日：2001-06-26

申请号：US08822643

申请日：1997-03-24

申请人： Norikazu Ito ,  Tsutomu Yamamoto ,  Taro Shigata ,  Shintaro Mizutani ,  Yusuke Tani ,  Ichiro Fujisawa

发明人： Norikazu Ito ,  Tsutomu Yamamoto ,  Taro Shigata ,  Shintaro Mizutani ,  Yusuke Tani ,  Ichiro Fujisawa

IPC分类号： G06F1516

CPC分类号： H04L12/2803 ,  H04H60/04 ,  H04L12/282 ,  H04L2012/2849

摘要： A control command attaching the same identifier to related commands is input from an application to an AV data processing control device. Further, a command for linking this identifier and a trigger generated by a contact input-1 is input. When the contact input-1 is generated, all control commands containing the identifier are executed. Further, when the link of the contact input-1 and the identifier of the control command is invalidated, even if the contact input-1 is generated, none of the linked control commands are executed. The execution of the control commands is carried out by controlling the controlled devices by the IDCs.

摘要翻译： 将相同标识符附加到相关命令的控制命令从应用程序输入到AV数据处理控制装置。 此外，输入用于链接该标识符和由联系人输入-1产生的触发的命令。 当生成接触输入-1时，执行包含标识符的所有控制命令。 此外，当触点输入-1的链接和控制命令的标识符无效时，即使生成了触点输入-1，也不执行链接的控制命令。 控制命令的执行是通过IDC控制受控设备进行的。

公开(公告)号：US5841740A

公开(公告)日：1998-11-24

申请号：US759458

申请日：1996-12-05

申请人： Horoyuki Fijita ,  Norikazu Ito

发明人： Horoyuki Fijita ,  Norikazu Ito

IPC分类号： G11C7/08 ,  G11B27/034 ,  G11B27/10 ,  G11B27/11 ,  G11B27/32 ,  G11C8/16 ,  H04N5/781 ,  H04N5/92 ,  H04N9/804 ,  G11B17/22

CPC分类号： G11B27/11 ,  G11B27/034 ,  G11B27/105 ,  G11B27/329 ,  H04N9/8042 ,  G11B2220/20 ,  G11B2220/2525 ,  G11B2220/415 ,  G11B2220/65 ,  H04N5/781 ,  H04N5/9203

摘要： An information data recording and reproducing apparatus is disclosed. Editing data showing the parts of the stock data contained in the audio and/or video data obtained as a result of editing is output from an editing device to a control system. The control system generates recording region data for reproduction showing the recording regions occupied by the parts of the stock data in the recording medium of a hard disc array in advance based on the received editing data and recording region data showing the recording regions occupied by the stock data having parts to be contained in the edited audio and/or video data in the recording medium of the hard disc array. The parts of the stock data are reproduced from the hard disc array based on this recording region data for reproduction and audio and/or video data having the same content as that of the edited audio and/or video data is reproduced.

摘要翻译： 公开了一种信息数据记录和再现装置。 显示将编辑结果中获得的音频和/或视频数据中包含的股票数据的部分的编辑数据从编辑装置输出到控制系统。 控制系统基于接收到的编辑数据，生成表示硬盘阵列的记录介质中的库存数据的部分所占据的记录区域的数据，以及表示存储器占据的记录区域的记录区域数据 具有要包含在硬盘阵列的记录介质中的编辑的音频和/或视频数据中的部分的数据。 基于用于再现的该记录区域数据，从硬盘阵列再现存储数据的部分，并且再现与编辑的音频和/或视频数据的内容相同的内容的音频和/或视频数据。

公开(公告)号：US5828841A

公开(公告)日：1998-10-27

申请号：US548954

申请日：1995-10-27

申请人： Norikazu Ito ,  Hiroyuki Fujita ,  Yuichi Kojima ,  Atsuo Matsuyama ,  Masahiro Kato

发明人： Norikazu Ito ,  Hiroyuki Fujita ,  Yuichi Kojima ,  Atsuo Matsuyama ,  Masahiro Kato

IPC分类号： G11B27/031 ,  G11B27/034 ,  G11B27/10 ,  H04H60/04 ,  H04N5/76 ,  H04N5/781 ,  H04N5/85 ,  H04N7/16

CPC分类号： G11B27/031 ,  G11B27/034 ,  G11B27/105 ,  H04N21/2312 ,  H04N21/242 ,  H04N21/4325 ,  H04N21/4334 ,  H04N21/43615 ,  H04N5/781 ,  H04H60/04 ,  H04N5/85

摘要： A video signal recording and reproduction apparatus, provided with at least one encoding apparatus for encoding an input video signal, at least one data storage apparatus for recording and reproducing a video signal encoded by the encoding apparatus, a line switching apparatus for selectively connecting the encoding apparatus and data storage apparatus or selectively connecting the data storage apparatus and an output line of the video signal; and a control apparatus for controlling the line switching apparatus and the data storage apparatus in accordance with a recording command or reproduction command.

摘要翻译： 一种具有编码输入视频信号的至少一个编码装置的视频信号记录和再现装置，用于记录和再现由编码装置编码的视频信号的至少一个数据存储装置，用于选择性地将编码 装置和数据存储装置或选择性地连接数据存储装置和视频信号的输出线; 以及根据记录命令或再现命令来控制线路切换装置和数据存储装置的控制装置。