公开(公告)号：US20190204742A1

公开(公告)日：2019-07-04

申请号：US16225551

申请日：2018-12-19

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Choong-Bong Lee ,  Stefan J. Caporale ,  Jason A. DeSISTO ,  Jong Keun Park ,  Cong Liu ,  Cheng-Bai Xu ,  Cecily Andes

IPC: G03F7/11 ,  G03F7/16 ,  G03F7/38 ,  G03F7/32 ,  G03F7/20 ,  C09D133/14 ,  C08F220/28 ,  G03F7/038 ,  G03F7/039 ,  C09D133/08 ,  C08F220/18

CPC classification number: G03F7/11 ,  C08F220/18 ,  C08F220/28 ,  C08F2220/281 ,  C08F2220/283 ,  C09D133/08 ,  C09D133/14 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/0752 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/327 ,  G03F7/38

Abstract: Methods of forming an electronic device, comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises: a matrix polymer; an additive polymer; a basic quencher; and an organic solvent; wherein the additive polymer has a lower surface energy than a surface energy of the matrix polymer, and wherein the additive polymer is present in the overcoat composition in an amount of from 1 to 20 wt % based on total solids of the overcoat composition; (d) exposing the photoresist layer to activating radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an organic solvent developer. The methods have particular applicability in the semiconductor manufacturing industry.

公开(公告)号：US20180314155A1

公开(公告)日：2018-11-01

申请号：US15960825

申请日：2018-04-24

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Xisen Hou ,  Cong Liu ,  Irvinder Kaur

IPC: G03F7/11 ,  G03F7/16 ,  G03F7/00 ,  H01L21/027 ,  C09D133/16 ,  C08F220/68

Abstract: A pattern formation method, comprising: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern overcoat composition over the photoresist pattern, wherein the pattern overcoat composition comprises a second polymer and an organic solvent, wherein the organic solvent comprises one or more ester solvents, wherein the ester solvent is of the formula R1—C(O)O—R2, wherein R1 is a C3-C6 alkyl group and R2 is a C5-C10 alkyl group; (d) baking the coated photoresist pattern; and (e) rinsing the coated photoresist pattern with a rinsing agent to remove the second polymer. The methods find particular applicability in the manufacture of semiconductor devices.

公开(公告)号：US20180118968A1

公开(公告)日：2018-05-03

申请号：US15730870

申请日：2017-10-12

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Irvinder Kaur ,  Doris Kang ,  Cong Liu ,  Gerhard Pohlers ,  Mingqi Li

IPC: C09D133/10 ,  G03F7/00 ,  G03F7/004 ,  G03F7/11 ,  G03F7/32

CPC classification number: G03F7/11 ,  C09D133/10 ,  G03F7/0002 ,  G03F7/0046 ,  G03F7/16 ,  G03F7/2041 ,  G03F7/327 ,  G03F7/38 ,  G03F7/40 ,  H01L21/0274

Abstract: Provided are topcoat compositions that include: a matrix polymer; a surface active polymer; an ionic thermal acid generator comprising an anion and a cation, wherein the anion, the cation, or the anion and the cation are fluorinated; and a solvent. Also provided are coated substrates and pattern-forming methods which make use of the topcoat compositions. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.

公开(公告)号：US20170255102A1

公开(公告)日：2017-09-07

申请号：US15062701

申请日：2016-03-07

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Kevin Rowell ,  Cong Liu ,  Cheng Bai Xu ,  Irvinder Kaur ,  Jong Keun Park

IPC: G03F7/40

CPC classification number: G03F7/405 ,  G03F1/40 ,  G03F7/11 ,  G03F7/30 ,  G03F7/325 ,  H01L21/0273 ,  H01L21/0274

Abstract: Photoresist pattern trimming compositions comprise: a polymer that is soluble in a 0.26 normality aqueous tetramethylammonium hydroxide solution; and a solvent system, wherein the solvent system comprises one or more monoether solvents in a combined amount of from 50 to 98 wt % based on the solvent system. The compositions find particular applicability in the manufacture of semiconductor devices.

公开(公告)号：US09753370B2

公开(公告)日：2017-09-05

申请号：US14836050

申请日：2015-08-26

Applicant: Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials Korea Ltd.

Inventor： Chang-Young Hong ,  Cheng-Bai Xu ,  Jung Woo Kim ,  Cong Liu ,  Shintaro Yamada ,  Lori Anne Joesten ,  Choong-Bong Lee ,  Phillip D. Hustad ,  James C. Taylor

IPC: G03F7/40 ,  H01L21/027 ,  G03F7/32 ,  G03F7/039 ,  G03F7/20 ,  H01L21/033

CPC classification number: G03F7/40 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/325 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/0337

Abstract: Multiple-pattern forming methods are provided. The methods comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition comprising: a matrix polymer comprising an acid labile group; a photoacid generator; and a solvent; (c) patternwise exposing the photoresist layer to activating radiation; (d) baking the exposed photoresist layer; (e) contacting the baked photoresist layer with a first developer to form a first resist pattern; (f) treating the first resist pattern with a coating composition comprising an expedient for switching solubility of a sidewall region of the first resist pattern from soluble to insoluble with respect to a second developer that is different from the first developer; and (g) contacting the treated first resist pattern with the second developer to remove portions of the first resist pattern, leaving the solubility-switched sidewall region to form a multiple-pattern. The methods have particular applicability to the semiconductor manufacturing industry for the formation of fine lithographic patterns.

公开(公告)号：US09696629B2

公开(公告)日：2017-07-04

申请号：US14971087

申请日：2015-12-16

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Irvinder Kaur ,  Cong Liu ,  Kevin Rowell

IPC: G03F7/11 ,  G03F7/42 ,  G03F7/004 ,  C07C309/01 ,  C07C309/28 ,  C07C309/33 ,  C07C309/39 ,  C07C309/40 ,  G03F7/039 ,  G03F7/38 ,  G03F7/20 ,  G03F7/40

CPC classification number: G03F7/42 ,  C07C309/01 ,  C07C309/28 ,  C07C309/33 ,  C07C309/39 ,  C07C309/40 ,  G03F7/004 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/38 ,  G03F7/405

Abstract: Photoresist pattern trimming compositions are provided. The compositions comprise: a matrix polymer, an aromatic sulfonic acid and a solvent, wherein the aromatic sulfonic acid comprises one or more fluorinated alcohol group. Also provided are methods of trimming a photoresist pattern using the trimming compositions. The compositions and methods find particular applicability in the manufacture of semiconductor devices.

公开(公告)号：US09563126B2

公开(公告)日：2017-02-07

申请号：US14925147

申请日：2015-10-28

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Shintaro Yamada ,  Deyan Wang ,  Sabrina Wong ,  Cong Liu ,  Cheng-Bai Xu

IPC: G03F7/09 ,  G03F7/20 ,  G03F7/30 ,  G03F7/36 ,  G03F7/40 ,  G03F7/16 ,  C09B57/10 ,  C09B69/10 ,  C08G79/00 ,  C08K5/00 ,  C08K5/56 ,  H01L21/027 ,  H01L21/033

CPC classification number: G03F7/091 ,  C08G79/00 ,  C08K5/0091 ,  C08K5/56 ,  C09B57/10 ,  C09B69/10 ,  G03F7/16 ,  G03F7/20 ,  G03F7/30 ,  G03F7/36 ,  G03F7/40 ,  H01L21/027 ,  H01L21/0332

Abstract: This invention provides a composition containing an organometallic compound having a chromophore moiety in the metal polymer backbone which allows a wider range of n/k values such that substrate reflectivity can be controlled under various conditions.

Abstract translation: 本发明提供一种组合物，其含有在金属聚合物骨架中具有发色团部分的有机金属化合物，其允许更宽范围的n / k值，使得可以在各种条件下控制衬底反射率。

公开(公告)号：US20160347709A1

公开(公告)日：2016-12-01

申请号：US15167223

申请日：2016-05-27

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Irvinder Kaur ,  Cong Liu ,  Cheng-Bai Xu

IPC: C07C309/17 ,  C07D493/18 ,  G03F7/32 ,  G03F7/16 ,  G03F7/20 ,  C07D307/00 ,  G03F7/004

CPC classification number: C07C309/17 ,  C07C309/01 ,  C07C381/12 ,  C07C2601/14 ,  C07C2603/74 ,  C07D307/00 ,  C07D493/18 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  H01L21/0274

Abstract: Acid generator compounds are provided that are particularly useful as a photoresist composition component. In one preferred aspect, acid generators are provided that comprise one or more hydrophilic moieties.

Abstract translation: 提供了特别可用作光致抗蚀剂组合物组分的酸发生剂化合物。 在一个优选的方面，提供了包含一个或多个亲水部分的酸产生剂。

公开(公告)号：US20160333212A1

公开(公告)日：2016-11-17

申请号：US15152589

申请日：2016-05-12

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Cong Liu ,  Doris H. Kang ,  Deyan Wang ,  Cheng-Bai Xu ,  Mingqi Li ,  Irvinder Kaur

IPC: C09D133/02 ,  G03F7/32 ,  G03F7/20 ,  G03F7/11 ,  G03F7/16

CPC classification number: C09D133/02 ,  C09D4/00 ,  C09D133/06 ,  G03F7/0046 ,  G03F7/11 ,  G03F7/2041 ,  C08L33/06

Abstract: Photoresist topcoat compositions, comprising: a first polymer comprising a first repeat unit of general formula (I) and a second repeat unit of general formula (II): wherein: R1 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R2 represents optionally fluorinated linear, branched or cyclic C1 to C20 alkyl; L1 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; a second polymer comprising a first repeat unit of general formula (III) and a second repeat unit of general formula (IV): wherein: R3 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R4 represents linear, branched or cyclic C1 to C20 alkyl; R5 represents linear, branched or cyclic C1 to C20 fluoroalkyl; L2 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; and a solvent. Coated substrates coated with the described topcoat compositions and methods of processing a photoresist composition are also provided. The invention finds particular applicability in the manufacture of semiconductor devices.

Abstract translation: 其中：R 3独立地表示H，F或任选氟化的C 1至C 4烷基; R 4表示直链，支链或环状的C 1至C 20烷基; R5表示直链，支链或环状的C1至C20氟代烷基; L2表示单键或多价连接基团; n为1〜5的整数， 和溶剂。 还提供了涂覆有所述外涂层组合物的涂布基材和处理光致抗蚀剂组合物的方法。 本发明特别适用于制造半导体器件。

公开(公告)号：US09296879B2

公开(公告)日：2016-03-29

申请号：US14017281

申请日：2013-09-03

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Shintaro Yamada ,  Deyan Wang ,  Sabrina Wong ,  Cong Liu ,  Cheng-Bai Xu

IPC: C08K5/56 ,  C08K5/00 ,  G03F7/09 ,  H01L21/027 ,  H01L21/033 ,  C08G79/00 ,  C09B57/10 ,  C09B69/10

CPC classification number: G03F7/091 ,  C08G79/00 ,  C08K5/0091 ,  C08K5/56 ,  C09B57/10 ,  C09B69/10 ,  G03F7/16 ,  G03F7/20 ,  G03F7/30 ,  G03F7/36 ,  G03F7/40 ,  H01L21/027 ,  H01L21/0332

Abstract: This invention provides a composition containing an organometallic compound having a chromophore moiety in the metal polymer backbone which allows a wider range of n/k values such that substrate reflectivity can be controlled under various conditions.

Abstract translation: 本发明提供一种组合物，其含有在金属聚合物骨架中具有发色团部分的有机金属化合物，其允许更宽范围的n / k值，使得可以在各种条件下控制衬底反射率。