公开(公告)号：US20140218652A1

公开(公告)日：2014-08-07

申请号：US14082659

申请日：2013-11-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hideaki KUWABARA ,  Yasuyuki ARAI

IPC: H01L27/12 ,  G02F1/1368

CPC classification number: H01L27/1222 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/13452 ,  G02F1/13458 ,  G02F1/136204 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/136295 ,  G02F2201/123 ,  G02F2202/103 ,  G02F2202/105 ,  G02F2202/28 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67225 ,  H01L21/67236 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/66765 ,  H01L29/78669

Abstract: [Problem] A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high.[Solving Means] By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized.

Abstract translation: [问题]在传统的液晶显示装置中使用至少五个光掩模制造TFT，因此制造成本高。 [解决方案]通过在三个光刻步骤中使用三个光掩模来执行像素电极127，源极区域123和漏极区域124的形成，制备具有反向交错型n型的像素TFT部分的液晶显示装置 通道TFT和存储电容器。

公开(公告)号：US20140209902A1

公开(公告)日：2014-07-31

申请号：US14230731

申请日：2014-03-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroyuki MIYAKE ,  Hideaki KUWABARA

IPC: H01L27/12

CPC classification number: H01L27/124 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/45 ,  H01L29/78606 ,  H01L29/7869

Abstract: An object is to reduce the manufacturing cost of a semiconductor device. An object is to improve the aperture ratio of a semiconductor device. An object is to make a display portion of a semiconductor device display a higher-definition image. An object is to provide a semiconductor device which can be operated at high speed. The semiconductor device includes a driver circuit portion and a display portion over one substrate. The driver circuit portion includes: a driver circuit TFT in which source and drain electrodes are formed using a metal and a channel layer is formed using an oxide semiconductor; and a driver circuit wiring formed using a metal. The display portion includes: a pixel TFT in which source and drain electrodes are formed using an oxide conductor and a semiconductor layer is formed using an oxide semiconductor; and a display wiring formed using an oxide conductor.

Abstract translation: 目的是降低半导体器件的制造成本。 目的是提高半导体器件的开口率。 目的是使半导体器件的显示部分显示更高清晰度的图像。 目的在于提供一种可以高速运转的半导体装置。 该半导体器件包括一个基板上的驱动电路部分和显示部分。 驱动器电路部分包括：使用金属形成源电极和漏极的驱动电路TFT，并且使用氧化物半导体形成沟道层; 以及使用金属形成的驱动电路布线。 显示部分包括：使用氧化物导体形成源极和漏极的像素TFT，并且使用氧化物半导体形成半导体层; 以及使用氧化物导体形成的显示布线。

公开(公告)号：US20130082255A1

公开(公告)日：2013-04-04

申请号：US13680345

申请日：2012-11-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO ,  Toshinari SASAKI ,  Hideaki KUWABARA

IPC: H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized.

Abstract translation: 在使用氧化物半导体作为有源层的薄膜晶体管中，为了防止用作有源层的氧化物半导体区域的组成，膜质量，界面等的变化，并且为了稳定化 薄膜晶体管的电气特性。 在其中使用第一氧化物半导体区域作为有源层的薄膜晶体管中，在第一氧化物半导体区域和用于薄的第一氧化物半导体区域的保护绝缘层之间形成具有比第一氧化物半导体区域低导电性的第二氧化物半导体区域 由此第二氧化物半导体区域用作第一氧化物半导体区域的保护层; 因此，可以防止第一氧化物半导体区域的组成变化或膜质量的劣化，并且能够稳定薄膜晶体管的电特性。

公开(公告)号：US20130077011A1

公开(公告)日：2013-03-28

申请号：US13681880

申请日：2012-11-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yukie SUZUKI ,  Hideaki KUWABARA ,  Hajime KIMURA

IPC: G02F1/1362

CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/136286 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78678 ,  H01L29/78696

Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.

公开(公告)号：US20240243204A1

公开(公告)日：2024-07-18

申请号：US18522543

申请日：2023-11-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE ,  Kei TAKAHASHI ,  Kouhei TOYOTAKA ,  Masashi TSUBUKU ,  Kosei NODA ,  Hideaki KUWABARA

IPC: H01L29/786 ,  G06K19/077 ,  H01L21/8236 ,  H01L23/66 ,  H01L27/088 ,  H01L27/12 ,  H01L29/24 ,  H01L29/26 ,  H01L29/66 ,  G11C7/00 ,  G11C19/28 ,  H02M3/07

CPC classification number: H01L29/78609 ,  G06K19/07758 ,  H01L21/8236 ,  H01L23/66 ,  H01L27/0883 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/26 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  G11C7/00 ,  G11C19/28 ,  H01L2223/6677 ,  H02M3/07

Abstract: An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor, With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.

公开(公告)号：US20240027863A1

公开(公告)日：2024-01-25

申请号：US18231383

申请日：2023-08-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yukie SUZUKI ,  Hideaki KUWABARA ,  Hajime KIMURA

IPC: G02F1/1368 ,  H01L27/12 ,  H01L29/04 ,  H01L29/66 ,  H01L29/786 ,  G02F1/1362 ,  G02F1/1333 ,  G02F1/1339 ,  G02F1/1343

CPC classification number: G02F1/1368 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696 ,  H01L27/1288 ,  G02F1/136286 ,  G02F1/133345 ,  H01L27/1222 ,  H01L29/78678 ,  G02F1/1339 ,  G02F1/134309 ,  H01L29/458

Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.

公开(公告)号：US20220326740A1

公开(公告)日：2022-10-13

申请号：US17845233

申请日：2022-06-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yusuke YOSHITANI ,  Hideaki KUWABARA ,  Natsuko TAKASE

IPC: G06F1/16 ,  G06F3/041 ,  G04G21/04 ,  G04G17/04 ,  G09G3/36 ,  G06F3/044

Abstract: A highly convenient electronic device used while being worn on a body is provided. The electronic device is an arm-worn electronic device including a display panel, a power storage device, a circuit, and a sealing structure. The display panel displays an image with power supplied from the power storage device. The circuit includes an antenna and charges the power storage device wirelessly. Inside the sealing structure, the display panel, the power storage device, and the circuit are provided. The sealing structure includes a portion that transmits visible light. The sealing structure can be worn on an arm or is connected to a structure body that can be worn on an arm.

公开(公告)号：US20210143281A1

公开(公告)日：2021-05-13

申请号：US17010151

申请日：2020-09-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE ,  Kei TAKAHASHI ,  Kouhei TOYOTAKA ,  Masashi TSUBUKU ,  Kosei NODA ,  Hideaki KUWABARA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/26 ,  G06K19/077 ,  H01L21/8236 ,  H01L23/66 ,  H01L27/088 ,  H01L29/24 ,  H01L29/66

Abstract: An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.

公开(公告)号：US20200326572A1

公开(公告)日：2020-10-15

申请号：US16912853

申请日：2020-06-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yukie SUZUKI ,  Hideaki KUWABARA ,  Hajime KIMURA

IPC: G02F1/1368 ,  H01L27/12 ,  H01L29/04 ,  H01L29/66 ,  H01L29/786 ,  G02F1/1362 ,  G02F1/1333 ,  G02F1/1339 ,  G02F1/1343

Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.

公开(公告)号：US20190179196A1

公开(公告)日：2019-06-13

申请号：US16324649

申请日：2017-08-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shingo EGUCHI ,  Hideaki KUWABARA ,  Kazune YOKOMIZO

IPC: G02F1/1333 ,  G09F9/30 ,  H01L29/786 ,  H01L51/50 ,  H05B33/02

Abstract: A semiconductor device including a large display portion with improved portability is provided. The display device includes a first display panel, a second display panel, and an adhesive layer. The area of the second display panel is larger than the area of the first display panel. The first display panel includes a first substrate, a second substrate, and a reflective liquid crystal element and a first transistor each positioned between the first substrate and the second substrate. The second display panel includes a first resin layer having flexibility, a second resin layer having flexibility, and a light-emitting element and a second transistor each positioned between the first resin layer and the second resin layer. The liquid crystal element has a function of reflecting light toward the second substrate side. The light-emitting element has a function of emitting light toward the second resin layer side. The first substrate and part of the second resin layer are bonded to each other with the adhesive layer.