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公开(公告)号：US09812465B2
公开(公告)日：2017-11-07
申请号：US14804508
申请日：2015-07-21
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Junichiro Sakata , Toshinari Sasaki , Miyuki Hosoba
CPC classification number: H01L27/1225 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1218 , H01L27/124 , H01L27/127 , H01L29/24 , H01L29/66969 , H01L29/78633 , H01L29/78645 , H01L29/78648 , H01L29/78654 , H01L29/7869 , H01L29/78696
Abstract: An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.
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公开(公告)号：US09711651B2
公开(公告)日：2017-07-18
申请号：US14849928
申请日：2015-09-10
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Junichiro Sakata , Jun Koyama
CPC classification number: H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L27/124 , H01L29/24 , H01L29/66969 , H01L29/78696
Abstract: A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.
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公开(公告)号：US09601633B2
公开(公告)日：2017-03-21
申请号：US14330113
申请日：2014-07-14
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Takayuki Inoue , Masashi Tsubuku , Suzunosuke Hiraishi , Junichiro Sakata , Erumu Kikuchi , Hiromichi Godo , Akiharu Miyanaga , Shunpei Yamazaki
IPC: H01L29/10 , H01L29/12 , H01L29/786 , H01L29/417 , H01L29/24 , H01L31/032 , H01L31/18 , H01L27/12
CPC classification number: H01L29/7869 , H01L27/1225 , H01L29/24 , H01L29/41733 , H01L31/032 , H01L31/18
Abstract: An oxide semiconductor layer in which “safe” traps exist exhibits two kinds of modes in photoresponse characteristics. By using the oxide semiconductor layer, a transistor in which light deterioration is suppressed to the minimum and the electric characteristics are stable can be achieved. The oxide semiconductor layer exhibiting two kinds of modes in photoresponse characteristics has a photoelectric current value of 1 pA to 10 nA inclusive. When the average time τ1 until which carriers are captured by the “safe” traps is large enough, there are two kinds of modes in photoresponse characteristics, that is, a region where the current value falls rapidly and a region where the current value falls gradually, in the result of a change in photoelectric current over time.
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公开(公告)号：US09466756B2
公开(公告)日：2016-10-11
申请号：US13937561
申请日：2013-07-09
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Junichiro Sakata , Masayuki Sakakura , Yoshiaki Oikawa , Kenichi Okazaki , Hotaka Maruyama
CPC classification number: H01L27/1225 , H01L21/385 , H01L27/1214 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L27/127 , H01L27/1288 , H01L29/4908 , H01L29/78648 , H01L29/7869 , H01L33/0041 , H01L2924/0002 , H01L2924/00
Abstract: An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer which each have a shape whose end portions are located on an inner side than end portions of the semiconductor layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is provided between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected in an opening provided in a gate insulating layer through an oxide conductive layer.
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公开(公告)号：US09443874B2
公开(公告)日：2016-09-13
申请号：US14320742
申请日：2014-07-01
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Akiharu Miyanaga , Junichiro Sakata , Masayuki Sakakura , Masahiro Takahashi , Hideyuki Kishida , Shunpei Yamazaki
IPC: H01L29/12 , H01L27/12 , H01L29/786 , H01L29/45 , H01L27/32
CPC classification number: H01L29/7869 , H01L27/1214 , H01L27/1222 , H01L27/1225 , H01L27/3262 , H01L29/42384 , H01L29/45 , H01L29/4908 , H01L29/78618
Abstract: An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode.
Abstract translation: 目的是提供一种具有良好电特性的薄膜晶体管和包括薄膜晶体管作为开关元件的半导体器件。 薄膜晶体管包括形成在绝缘表面上的栅极电极，栅电极上的栅极绝缘膜，与栅极绝缘膜上的栅电极重叠的氧化物半导体膜，并且包括其中浓度为1或 包含在氧化物半导体中的多种金属高于其他区域，形成在氧化物半导体膜上并与该层接触的一对金属氧化物膜，以及与金属氧化物膜接触的源电极和漏电极 。 金属氧化物膜通过氧化源电极和漏电极中所含的金属而形成。
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Patent Agency Ranking
公开(公告)号：US09379141B2
公开(公告)日：2016-06-28
申请号：US14692077
申请日：2015-04-21
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Hiroki Ohara , Junichiro Sakata , Toshinari Sasaki , Miyuki Hosoba
IPC: H01L29/786 , H01L27/12 , H01L29/66 , H01L29/04
CPC classification number: H01L27/127 , H01L21/477 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L27/1274 , H01L27/1296 , H01L29/04 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78693
Abstract: An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.
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公开(公告)号：US09362416B2
公开(公告)日：2016-06-07
申请号：US14701616
申请日：2015-05-01
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei Yamazaki , Junichiro Sakata , Hiroki Ohara , Hideaki Kuwabara
CPC classification number: H01L27/3262 , G06F1/163 , H01L21/02614 , H01L27/1218 , H01L27/1222 , H01L27/1225 , H01L29/04 , H01L29/24 , H01L29/66969 , H01L29/78603 , H01L29/7869 , H01L29/78696 , H04B1/16
Abstract: One object is to provide a semiconductor device with a structure which enables reduction in parasitic capacitance sufficiently between wirings. In a bottom-gate type thin film transistor including a stacked layer of a first layer which is a metal thin film oxidized partly or entirely and an oxide semiconductor layer, the following oxide insulating layers are formed together: an oxide insulating layer serving as a channel protective layer which is over and in contact with a part of the oxide semiconductor layer overlapping with a gate electrode layer; and an oxide insulating layer which covers a peripheral portion and a side surface of the stacked oxide semiconductor layer.
Abstract translation: 一个目的是提供具有能够在布线之间充分降低寄生电容的结构的半导体器件。 在包括作为部分或全部氧化的金属薄膜的第一层的堆叠层和氧化物半导体层的底栅型薄膜晶体管中，形成以下氧化物绝缘层：作为沟道的氧化物绝缘层 与氧化物半导体层的与栅电极层重叠的部分结合并接触的保护层; 以及覆盖层叠的氧化物半导体层的周边部分和侧面的氧化物绝缘层。
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公开(公告)号：US09331689B2
公开(公告)日：2016-05-03
申请号：US13865407
申请日：2013-04-18
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Jun Koyama , Junichiro Sakata
CPC classification number: H03K17/56 , H02M7/217 , H02M2001/0006 , H03K17/063 , H03K19/0013 , Y10T307/74
Abstract: A power supply circuit includes a first switch, a voltage regulator circuit connected to the first switch, and a control circuit for controlling the first switch. The control circuit includes a second switch, a third switch, and a voltage generation circuit. For controlling the first switch, first voltage output from the voltage generation circuit is applied to the first switch through the second switch, and second voltage output from the voltage generation circuit is applied to the first switch through the third switch. Power consumption of the power supply circuit can be reduced.
Abstract translation: 电源电路包括第一开关，连接到第一开关的稳压器电路和用于控制第一开关的控制电路。 控制电路包括第二开关，第三开关和电压产生电路。 为了控制第一开关，通过第二开关将来自电压产生电路的第一电压输出施加到第一开关，并且从电压产生电路输出的第二电压通过第三开关施加到第一开关。 可以减少电源电路的功耗。
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公开(公告)号：US09293566B2
公开(公告)日：2016-03-22
申请号：US14247665
申请日：2014-04-08
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Toshinari Sasaki , Junichiro Sakata , Hiroki Ohara , Shunpei Yamazaki
IPC: H01L29/10 , H01L29/66 , H01L29/786 , H01L27/12
CPC classification number: H01L29/66969 , H01L27/1225 , H01L27/124 , H01L29/24 , H01L29/42356 , H01L29/42384 , H01L29/66742 , H01L29/78606 , H01L29/78618 , H01L29/7869 , H01L29/78696
Abstract: It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.
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公开(公告)号：US09263472B2
公开(公告)日：2016-02-16
申请号：US14244440
申请日：2014-04-03
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Tatsuya Takahashi
IPC: H01L29/04 , H01L27/12 , H01L29/45 , G02F1/1368 , H01L21/02
CPC classification number: H01L27/1225 , G02F1/1368 , H01L21/02554 , H01L21/02565 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L29/45 , H01L29/78645
Abstract: An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.
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