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    TRANSISTOR
    61.
    发明申请
    TRANSISTOR 审中-公开

    公开(公告)号：US20170358682A1

    公开(公告)日：2017-12-14

    申请号：US15610784

    申请日：2017-06-01

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Naoto GOTO ,  Yasuharu HOSAKA ,  Mizuho YAGUCHI

    IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

    Abstract: A transistor with a small footprint is provided. A transistor having high reliability is provided. A transistor is provided over an insulating layer that has a projection. Over the projection, at least a channel formation region of a semiconductor layer is provided. This can reduce the footprint of the transistor. The transistor has a curved structure, which inhibits light that enters from the outside from reaching a channel formation region of the semiconductor layer. Accordingly, deterioration of the transistor due to external light can be reduced, whereby the transistor can have increased reliability. The projection can be obtained by utilizing the internal stress of the layer formed over the insulating layer. Alternatively, the projection can be obtained by placing, under the insulating layer, a structure body for providing the insulating layer with the projection.

    SEMICONDUCTOR DEVICE
    67.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150084045A1

    公开(公告)日：2015-03-26

    申请号：US14487336

    申请日：2014-09-16

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yasuharu HOSAKA

    IPC: H01L27/12

    CPC classification number: H01L27/1255 ,  H01L27/1222 ,  H01L27/1225

    Abstract: An oxide semiconductor film with a low density of defect states is formed. In addition, an oxide semiconductor film with a low impurity concentration is formed. Electrical characteristics of a semiconductor device or the like using an oxide semiconductor film is improved. A semiconductor device including a capacitor, a resistor, or a transistor having a metal oxide film that includes a region; with a transmission electron diffraction measurement apparatus, a diffraction pattern with luminescent spots indicating alignment is observed in 70% or more and less than 100% of the region when an observation area is changed one-dimensionally within a range of 300 nm.

    Abstract translation: 形成具有低密度缺陷状态的氧化物半导体膜。 此外，形成杂质浓度低的氧化物半导体膜。 使用氧化物半导体膜的半导体器件等的电特性得到改善。 一种半导体器件，包括具有包括区域的金属氧化物膜的电容器，电阻器或晶体管; 利用透射电子衍射测定装置，在观察区域在300nm的范围内一维地变化时，在70％以上且小于100％的区域中观察到具有指示取向的发光点的衍射图案。

    SEMICONDUCTOR DEVICE
    68.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150084043A1

    公开(公告)日：2015-03-26

    申请号：US14486089

    申请日：2014-09-15

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Noritaka ISHIHARA ,  Masashi OOTA ,  Masashi TSUBUKU ,  Masami JINTYOU ,  Yukinori SHIMA ,  Junichi KOEZUKA ,  Yasuharu HOSAKA ,  Shunpei YAMAZAKI

    IPC: H01L27/12 ,  H01L29/417 ,  H01L29/45

    CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

    Abstract: Defects in an oxide semiconductor film are reduced in a semiconductor device including the oxide semiconductor film. The electrical characteristics of a semiconductor device including an oxide semiconductor film are improved. The reliability of a semiconductor device including an oxide semiconductor film is improved. A semiconductor device including an oxide semiconductor layer; a metal oxide layer in contact with the oxide semiconductor layer, the metal oxide layer including an In-M oxide (M is Ti, Ga, Y, Zr, La, Ce, Nd, or Hf); and a conductive layer in contact with the metal oxide layer, the conductive layer including copper, aluminum, gold, or silver is provided. In the semiconductor device, y/(x+y) is greater than or equal to 0.75 and less than 1 where the atomic ratio of In to M included in the metal oxide layer is In:M=x:y.

    Abstract translation: 在包括氧化物半导体膜的半导体器件中，氧化物半导体膜中的缺陷减少。 提高了包括氧化物半导体膜的半导体器件的电特性。 提高了包括氧化物半导体膜的半导体器件的可靠性。 一种包括氧化物半导体层的半导体器件; 与氧化物半导体层接触的金属氧化物层，所述金属氧化物层包含In-M氧化物（M为Ti，Ga，Y，Zr，La，Ce，Nd或Hf）; 和与金属氧化物层接触的导电层，提供包括铜，铝，金或银的导电层。 在半导体器件中，y /（x + y）大于或等于0.75且小于1，其中包含在金属氧化物层中的In与M的原子比为In：M = x：y。

    OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE
    69.
    发明申请
    OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE 有权
    氧化物半导体膜和半导体器件

    公开(公告)号：US20130285045A1

    公开(公告)日：2013-10-31

    申请号：US13862716

    申请日：2013-04-15

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Toshinari SASAKI ,  Shuhei YOKOYAMA ,  Takashi HAMOCHI ,  Yusuke NONAKA ,  Yasuharu HOSAKA

    IPC: H01L29/786

    CPC classification number: H01L29/7869 ,  H01L27/1225

    Abstract: A method for evaluating an oxide semiconductor film, a method for evaluating a transistor including an oxide semiconductor film, a transistor which includes an oxide semiconductor film and has favorable switching characteristics, and an oxide semiconductor film which is applicable to a transistor and enables the transistor to have favorable switching characteristics are provided. A PL spectrum of an oxide semiconductor film obtained by low-temperature PL spectroscopy has a first curve whose local maximum value is found in a range of 1.6 eV or more and 1.8 eV or less and a second curve whose local maximum value is found in a range of 1.7 eV or more and 2.4 eV or less. A value obtained by dividing the area of the second curve by the sum of the area of the first curve and the area of the second curve is 0.1 or more and less than 1.

    Abstract translation: 一种用于评估氧化物半导体膜的方法，包括氧化物半导体膜的晶体管的评估方法，包括氧化物半导体膜并且具有良好的开关特性的晶体管，以及可应用于晶体管并使晶体管能够实现的氧化物半导体膜 具有良好的开关特性。 通过低温PL光谱获得的氧化物半导体膜的PL光谱具有第一曲线，其局部最大值在1.6eV以上至1.8eV以下的范围内，第二曲线的局部最大值位于 范围为1.7eV以上且2.4eV以下。 通过将第二曲线的面积除以第一曲线的面积和第二曲线的面积之和而得到的值为0.1以上且小于1。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    70.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20130164899A1

    公开(公告)日：2013-06-27

    申请号：US13721972

    申请日：2012-12-20

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yasuharu HOSAKA ,  Terumasa IKEYAMA ,  Shunpei YAMAZAKI

    IPC: H01L21/02 ,  H01L29/66

    CPC classification number: H01L21/02365 ,  G02F1/1368 ,  H01L21/0214 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02318 ,  H01L21/02337 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/4908 ,  H01L29/66477 ,  H01L29/7869

    Abstract: A highly reliable semiconductor device in which a transistor including an oxide semiconductor film has stable electric characteristics is manufactured. In the semiconductor device which includes an inverted-staggered transistor having a bottom-gate structure and being provided over a substrate having an insulating surface, at least a first gate insulating film and a second gate insulating film are provided between a gate electrode layer and an oxide semiconductor film, and heat treatment is performed at a temperature of 450° C. or higher, preferably 650° C. or higher, and then the oxide semiconductor film is formed. By the heat treatment at a temperature of 450° C. or higher before the formation of the oxide semiconductor film, diffusion of hydrogen elements into the oxide semiconductor film, which causes degradation or variations in electric characteristics of the transistor, can be reduced, so that the transistor can have stable electric characteristics.

    Abstract translation: 制造其中包含氧化物半导体膜的晶体管具有稳定的电特性的高度可靠的半导体器件。 在包括具有底栅结构的反交错晶体管并且设置在具有绝缘表面的衬底上的半导体器件中，至少第一栅极绝缘膜和第二栅极绝缘膜设置在栅极电极层和第二栅极绝缘膜之间， 氧化物半导体膜，在450℃以上，优选650℃以上的温度进行热处理，然后形成氧化物半导体膜。 通过在形成氧化物半导体膜之前在450℃以上的温度下进行热处理，可以减少导致劣化或者晶体管的电特性的变化的氢元素向氧化物半导体膜的扩散，因此 晶体管可以具有稳定的电气特性。

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