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公开(公告)号：US10211383B2
公开(公告)日：2019-02-19
申请号：US15965808
申请日：2018-04-27
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Hyeon Chae , So Ra Lee , Kyung Hee Ye
Abstract: A light emitting device in which a bonding pad is soldered to a mounting substrate, wherein the bonding pad may be formed in various shapes that can minimize the occurrence of voids during soldering or heat fusion.
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公开(公告)号：US20180287028A1
公开(公告)日：2018-10-04
申请号：US15995014
申请日：2018-05-31
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Hyeon Chae , So Ra Lee , Kyung Hee Ye
Abstract: light emitting device in which a bonding pad is soldered to a mounting substrate, wherein the bonding pad may be formed in various shapes that can minimize the occurrence of voids during soldering or heat fusion.
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公开(公告)号：US10003039B2
公开(公告)日：2018-06-19
申请号：US15513150
申请日：2015-09-01
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Min Jang , Jong Hyeon Chae , Dae Woong Suh
CPC classification number: H01L51/504 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/44 , H01L33/46 , H01L33/62 , H01L51/442
Abstract: A light emitting device and method of fabricating the same using a wafer level package process are disclosed. The light emitting device has improved heat dissipation to prevent damage by heat, thereby achieving improvement in reliability and luminous efficacy. In addition, the light emitting device has a small difference in coefficients of thermal expansion and thus can reduce stress applied to a light emitting structure to prevent damage to the light emitting structure, thereby achieving improvement in reliability and luminous efficacy.
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64.发明申请公开(公告)号：US20180145217A1
公开(公告)日：2018-05-24
申请号：US15860599
申请日：2018-01-02
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Hyeon Chae , Joon Sup Lee , Daewoong Suh , Won Young Roh , Min Woo Kang , Jong Min Jang
CPC classification number: H01L33/24 , H01L27/156 , H01L33/0075 , H01L33/14 , H01L33/38 , H01L33/405 , H01L33/44 , H01L33/46 , H01L33/50 , H01L33/505 , H01L33/60 , H01L33/62 , H01L2933/0016 , H01L2933/0025
Abstract: Described are a light emitting diode and a light emitting diode module. The light emitting diode module includes a printed circuit board and a light emitting diode joined thereto through a solder paste. The light emitting diode includes a first electrode pad electrically connected to a first conductive type semiconductor layer and a second electrode pad connected to a second conductive type semiconductor layer, wherein each of the first electrode pad and the second electrode pad includes at least five pairs of Ti/Ni layers or at least five pairs of Ti/Cr layers and the uppermost layer of Au. Thus a metal element such as Sn in the solder paste is prevented from diffusion so as to provide a reliable light emitting diode module.
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公开(公告)号：US20180138382A1
公开(公告)日：2018-05-17
申请号：US15868976
申请日：2018-01-11
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Hyeon Chae , Yeon Cheol Cho , Cun Bok Jeong , Hyoung Jin Lim
CPC classification number: H01L33/62 , H01L33/36 , H01L33/382 , H01L33/387 , H01L2224/16225 , H01L2933/0016 , H01L2933/0066
Abstract: A method for manufacturing a light emitting diode package comprises: arranging a first solder and a second solder between a substrate and a light emitting diode; and subjecting the first solder and the second solder to heat treatment to bond the substrate and the light emitting diode. The heat treatment comprises: increasing the temperature of the first and second solders from room temperature to a temperature Tp; maintaining the temperature Tp; and lowering the temperature Tp. The heating step comprises: a first ramping step of increasing a temperature from room temperature to a temperature TA at a constant speed; a pre-heating step of increasing the temperature from the temperature TA to a temperature TB to impart fluidity to the first and second solders; and a second ramping step of increasing the temperature from the TB to TL at a constant speed.
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Patent Agency Ranking
公开(公告)号：US20180114879A1
公开(公告)日：2018-04-26
申请号：US15838264
申请日：2017-12-11
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Hyeon Chae , Joon Sup Lee , Daewoong Suh , Won Young Roh , Min Woo Kang , Jong Min Jang , Se Hee Oh , Hyun A Kim
CPC classification number: H01L33/38 , H01L33/40 , H01L33/405 , H01L33/44 , H01L2224/16225
Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.
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公开(公告)号：US20180108704A1
公开(公告)日：2018-04-19
申请号：US15835326
申请日：2017-12-07
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Min Jang , Jong Hyeon Chae , Joon Sup Lee , Daewoong Suh , Hyun A. Kim , Won Young Roh , Min Woo Kang
IPC: H01L27/15
Abstract: A light emitting diode array is provide to include: a substrate; light emitting diodes positioned over the substrate, each including a first semiconductor layer, an active layer, and a second semiconductor layer, wherein each light emitting diode is disposed to form a first via hole structure exposing a portion of the corresponding first semiconductor layer; lower electrodes disposed over the second semiconductor layer; a first interlayer insulating layer disposed over the lower electrodes and configured to expose the portion of the first semiconductor layer of corresponding light emitting diodes; upper electrodes electrically connected to the first semiconductor layer through the first via hole structure, wherein the first via hole structure is disposed in parallel with one side of the corresponding second semiconductor layer and the first interlayer insulating layer is disposed to form a second via hole structure exposing a portion of the lower electrodes.
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68.发明授权公开(公告)号：US09520546B2
公开(公告)日：2016-12-13
申请号：US15186358
申请日：2016-06-17
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Hyeon Chae , Joon Sup Lee , Daewoong Suh , Won Young Roh , Min Woo Kang , Jong Min Jang
IPC: H01L33/00 , H01L27/15 , H01L29/22 , H01L21/00 , H01L33/62 , H01L33/14 , H01L33/38 , H01L33/40 , H01L33/44 , H01L33/50
CPC classification number: H01L33/24 , H01L27/156 , H01L33/0075 , H01L33/14 , H01L33/38 , H01L33/405 , H01L33/44 , H01L33/46 , H01L33/50 , H01L33/505 , H01L33/60 , H01L33/62 , H01L2933/0016 , H01L2933/0025
Abstract: Disclosed are a light emitting diode and a light emitting diode module. The light emitting diode module includes a printed circuit board and a light emitting diode joined thereto through a solder paste. The light emitting diode includes a first electrode pad electrically connected to a first conductive type semiconductor layer and a second electrode pad connected to a second conductive type semiconductor layer, wherein each of the first electrode pad and the second electrode pad includes at least five pairs of Ti/Ni layers or at least five pairs of Ti/Cr layers and the uppermost layer of Au. Thus a metal element such as Sn in the solder paste is prevented from diffusion so as to provide a reliable light emitting diode module.
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69.发明授权Light-emitting diode module having light-emitting diode joined through solder paste and light-emitting diode 有权具有通过焊膏和发光二极管连接的发光二极管的发光二极管模块公开(公告)号：US09520543B2
公开(公告)日：2016-12-13
申请号：US14848262
申请日：2015-09-08
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Hyeon Chae , Joon Sup Lee , Daewoong Suh , Won Young Roh , Min Woo Kang , Jong Min Jang
IPC: H01L27/15 , H01L29/22 , H01L21/00 , H01L33/62 , H01L33/00 , H01L33/14 , H01L33/38 , H01L33/50 , H01L33/40 , H01L33/44
CPC classification number: H01L33/24 , H01L27/156 , H01L33/0075 , H01L33/14 , H01L33/38 , H01L33/405 , H01L33/44 , H01L33/46 , H01L33/50 , H01L33/505 , H01L33/60 , H01L33/62 , H01L2933/0016 , H01L2933/0025
Abstract: Disclosed are a light emitting diode and a light emitting diode module. The light emitting diode module includes a printed circuit board and a light emitting diode joined thereto through a solder paste. The light emitting diode includes a first electrode pad electrically connected to a first conductive type semiconductor layer and a second electrode pad connected to a second conductive type semiconductor layer, wherein each of the first electrode pad and the second electrode pad includes at least five pairs of Ti/Ni layers or at least five pairs of Ti/Cr layers and the uppermost layer of Au. Thus a metal element such as Sn in the solder paste is prevented from diffusion so as to provide a reliable light emitting diode module.
Abstract translation: 公开了一种发光二极管和发光二极管模块。 发光二极管模块包括通过焊膏与其连接的印刷电路板和发光二极管。 发光二极管包括电连接到第一导电类型半导体层的第一电极焊盘和连接到第二导电类型半导体层的第二电极焊盘，其中第一电极焊盘和第二电极焊盘中的每一个包括至少五对 Ti / Ni层或至少5对Ti / Cr层和Au的最上层。 因此，防止焊膏中的诸如Sn的金属元素扩散，从而提供可靠的发光二极管模块。
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70.发明申请公开(公告)号：US20160293818A1
公开(公告)日：2016-10-06
申请号：US15186358
申请日：2016-06-17
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Hyeon Chae , Joon Sup Lee , Daewoong Suh , Won Young Roh , Min Woo Kang , Jong Min Jang
CPC classification number: H01L33/24 , H01L27/156 , H01L33/0075 , H01L33/14 , H01L33/38 , H01L33/405 , H01L33/44 , H01L33/46 , H01L33/50 , H01L33/505 , H01L33/60 , H01L33/62 , H01L2933/0016 , H01L2933/0025
Abstract: Disclosed are a light emitting diode and a light emitting diode module. The light emitting diode module includes a printed circuit board and a light emitting diode joined thereto through a solder paste. The light emitting diode includes a first electrode pad electrically connected to a first conductive type semiconductor layer and a second electrode pad connected to a second conductive type semiconductor layer, wherein each of the first electrode pad and the second electrode pad includes at least five pairs of Ti/Ni layers or at least five pairs of Ti/Cr layers and the uppermost layer of Au. Thus a metal element such as Sn in the solder paste is prevented from diffusion so as to provide a reliable light emitting diode module.
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