公开(公告)号：US5910684A

公开(公告)日：1999-06-08

申请号：US708116

申请日：1996-09-03

申请人： Gurtej S. Sandhu ,  Ravi Iyer

发明人： Gurtej S. Sandhu ,  Ravi Iyer

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/768 ,  H01L21/76838 ,  H01L23/5222 ,  H01L2924/0002

摘要： A semiconductor processing method of forming an electrically conductive interconnect line having an electrical conductive covering predominately coextensive therewith, includes, a) providing an conductive interconnect line over a first electrically insulating material, the line having a top and sidewalls; b) selectively depositing a second electrically insulating material layer over the interconnect line and the first insulating material in a manner which deposits a greater thickness of the second insulating material atop the interconnect line than a thickness of the second insulating material over the first insulating material; c) anisotropically etching the second insulating material layer inwardly to at least the first insulating material yet leaving second insulating material over the top and the sidewalls of the interconnect line; and d) providing an electrically conductive layer over the anisotropically etched second insulating layer to form a conductive layer which is predominately coextensive with the interconnect line over the etched second insulating material. The method further comprises provision of a base electrically conductive layer beneath the first insulating material, with the anisotropically etching step etching through the first insulating material to the base conductive layer, and the conductive layer being provided in electrical connection with the base conductive layer. Integrated circuitry produced by the method and other methods is also disclosed.

摘要翻译： 一种形成具有与其主要共同延伸的导电覆盖层的导电互连线的半导体处理方法包括：a）在第一电绝缘材料上提供导电互连线，该线具有顶部和侧壁; b）在所述互连线和所述第一绝缘材料上选择性地沉积第二电绝缘材料层，所述第二电绝缘材料层以在所述互连线上方沉积更大厚度的所述第二绝缘材料的厚度大于所述第一绝缘材料上所述第二绝缘材料的厚度; c）将第二绝缘材料层向内各向异性地蚀刻至少至少第一绝缘材料，同时将第二绝缘材料留在互连线的顶部和侧壁上; 以及d）在各向异性蚀刻的第二绝缘层上方设置导电层，以形成导电层，该导电层主要与蚀刻的第二绝缘材料上的互连线共同延伸。 该方法还包括在第一绝缘材料下面提供基底导电层，各向异性蚀刻步骤通过第一绝缘材料蚀刻到基底导电层，并且导电层设置成与基底导电层电连接。 还公开了通过该方法和其它方法生产的集成电路。

公开(公告)号：US5856236A

公开(公告)日：1999-01-05

申请号：US663996

申请日：1996-06-14

申请人： Gilbert Lai ,  Gurtej S. Sandhu ,  Ravi Iyer ,  Brian A. Vaartstra

发明人： Gilbert Lai ,  Gurtej S. Sandhu ,  Ravi Iyer ,  Brian A. Vaartstra

IPC分类号： C23C16/02 ,  C23C16/44 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/28568 ,  C23C16/0272 ,  C23C16/44 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76877

摘要： A method of forming a conformal aluminum film on a refractory metal nitride layer is provided and includes positioning a substrate having the refractory metal nitride layer thereon within a chemical vapor deposition chamber; establishing a nominal temperature for the substrate; introducing a carrier gas containing a gaseous, metalorganic precursor into the chamber for a time sufficient to form a metallic seed layer; and introducing a carrier gas containing a gaseous aluminum metalorganic precursor into the chamber for a time sufficient to form a conformal aluminum metal film over the metal refractory nitride layer.

摘要翻译： 提供了在难熔金属氮化物层上形成共形铝膜的方法，包括将其上具有难熔金属氮化物层的基板定位在化学气相沉积室内; 建立基板的标称温度; 将含有气态金属有机前体的载气引入室中足以形成金属种子层的时间; 并将含有气态铝金属有机前体的载气引入室中足以在金属耐火氮化物层上形成共形铝金属膜的时间。

公开(公告)号：US5382550A

公开(公告)日：1995-01-17

申请号：US103392

申请日：1993-08-05

申请人： Ravi Iyer

发明人： Ravi Iyer

IPC分类号： H01L21/316 ,  H01L21/02

CPC分类号： H01L21/02164 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31633 ,  Y10S148/118

摘要： A deposition method of reducing fixed charge in a layer of silicon dioxide includes: a) providing a gaseous organosilicon compound to a chemical vapor deposition reactor having a semiconductor wafer positioned therein; b) providing an oxidizing gas to the reactor for reaction with the organosilicon compound; c) feeding a gaseous hydrogen containing source to the reactor; and d) reacting the organosilicon compound, oxidizing gas and gaseous hydrogen containing source to deposit a layer of silicon dioxide on the wafer, the hydrogen containing source gas effectively reacting with the organosilicon compound to produce reduced fixed charge in the deposited silicon dioxide layer over that which would be present if no hydrogen containing source gas were fed to the reactor under otherwise identical reacting conditions. Another method of depositing a layer of silicon dioxide on a semiconductor wafer comprises: a) providing a gaseous organosilicon compound to a chemical vapor deposition reactor having a semiconductor wafer positioned therein; and b) providing an oxidizing gas to the reactor, and reacting the oxidizing gas with the gaseous organosilicon compound in the reactor to deposit a layer of silicon dioxide on the wafer, the oxidizing gas comprising a compound having an N--O bond.

摘要翻译： 减少二氧化硅层中的固定电荷的沉积方法包括：a）向其中定位有半导体晶片的化学气相沉积反应器提供气态有机硅化合物; b）向反应器提供氧化气体以与有机硅化合物反应; c）将含气态的氢气源送入反应器; 和d）使有机硅化合物，氧化气体和含氢气气体源反应以在晶片上沉积二氧化硅层，含氢源气体与有机硅化合物有效反应以在沉积的二氧化硅层中产生减少的固定电荷，超过该沉积二氧化硅层 如果在其他相同的反应条件下不将含氢的源气体进料到反应器中，则其将存在。 在半导体晶片上沉积二氧化硅层的另一种方法包括：a）向其中定位有半导体晶片的化学气相沉积反应器提供气态有机硅化合物; 和b）向所述反应器提供氧化气体，并且使所述氧化气体与所述反应器中的所述气态有机硅化合物反应以在所述晶片上沉积二氧化硅层，所述氧化气体包含具有N-O键的化合物。

公开(公告)号：US10110586B1

公开(公告)日：2018-10-23

申请号：US15417662

申请日：2017-01-27

申请人： Ravi Iyer

发明人： Ravi Iyer

IPC分类号： G06F7/04 ,  H04L29/06 ,  G06F17/30 ,  H04L12/26 ,  G06Q50/00

摘要： A method may include identifying a candidate user based on a connection to an established user of a business management application (BMA). The candidate user may have an associated user identifier. The method may further include collecting, using the user identifier, social network data of the candidate user from an online social network, identifying, using the social network data of the candidate user, application programming interfaces (APIs) for collecting public data about the candidate user, retrieving, using the user identifier and an API, public data corresponding to the candidate user, generating, using the public data corresponding to the candidate user, an account creation request including the user identifier, and transmitting the account creation request to the BMA.

公开(公告)号：US07763327B2

公开(公告)日：2010-07-27

申请号：US11192326

申请日：2005-07-27

申请人： Gurtej S. Sandhu ,  Ravi Iyer

发明人： Gurtej S. Sandhu ,  Ravi Iyer

IPC分类号： B05D3/06

CPC分类号： C23C16/401

摘要： A CVD ozone (O3) deposition process, with the preferred embodiment comprising the steps of disposing a substrate in a chemical vapor deposition chamber and exposing the substrate surface to a SiO2 precursor gas, a carrier gas, and optionally a dopant gas in the presence of ozone and exposing the reaction volume of the 5 gases above the substrate surface to a high intensity light source, to increase the functional atomic oxygen concentration and reduce the fixed charge in the deposited films.

摘要翻译： CVD臭氧（O3）沉积方法，优选实施方案包括以下步骤：在化学气相沉积室中设置衬底，并将衬底表面暴露于SiO 2前体气体，载气和任选的掺杂气体中， 臭氧，并将基板表面上方的5种气体的反应体积暴露于高强度光源，以增加功能原子氧浓度并降低沉积膜中的固定电荷。

公开(公告)号：US07620071B2

公开(公告)日：2009-11-17

申请号：US10991239

申请日：2004-11-16

申请人： Srihari Makineni ,  Ravi Iyer ,  Dave Minturn ,  Sujoy Sen ,  Donald Newell ,  Li Zhao

发明人： Srihari Makineni ,  Ravi Iyer ,  Dave Minturn ,  Sujoy Sen ,  Donald Newell ,  Li Zhao

IPC分类号： H04J3/24

CPC分类号： H04L45/74 ,  H04L49/20 ,  H04L69/16 ,  H04L69/161 ,  H04L69/166

摘要： In general, in one aspect, the disclosures describes a method that includes receiving multiple ingress Internet Protocol packets, each of the multiple ingress Internet Protocol packets having an Internet Protocol header and a Transmission Control Protocol segment having a Transmission Control Protocol header and a Transmission Control Protocol payload, where the multiple packets belonging to a same Transmission Control Protocol/Internet Protocol flow. The method also includes preparing an Internet Protocol packet having a single Internet Protocol header and a single Transmission Control Protocol segment having a single Transmission Control Protocol header and a single payload formed by a combination of the Transmission Control Protocol segment payloads of the multiple Internet Protocol packets. The method further includes generating a signal that causes receive processing of the Internet Protocol packet.

摘要翻译： 一般来说，一方面，本公开内容描述了一种方法，其包括接收多个入口因特网协议分组，所述多个入口因特网协议分组中的每一个具有因特网协议报头和具有传输控制协议报头和传输控制的传输控制协议段 协议有效载荷，其中属于相同传输控制协议/因特网协议的多个分组流。 该方法还包括准备具有单个因特网协议报头的互联网协议分组和具有单个传输控制协议报头的单个传输控制协议段和由多个因特网协议分组的传输控制协议段有效载荷的组合形成的单个有效载荷 。 该方法还包括产生导致因特网协议分组的接收处理的信号。

公开(公告)号：US20070048946A1

公开(公告)日：2007-03-01

申请号：US11219079

申请日：2005-09-01

申请人： D. V. Ramaswamy ,  Ravi Iyer

发明人： D. V. Ramaswamy ,  Ravi Iyer

IPC分类号： H01L21/336

CPC分类号： H01L21/28088 ,  H01L21/823842 ,  H01L29/78

摘要： A transistor gate forming method includes forming a first and a second transistor gate. Each of the two gates includes a lower metal layer and an upper metal layer. The lower metal layer of the first gate originates from an as-deposited material exhibiting a work function the same as exhibited in an as-deposited material from which the lower metal layer of the second gate originates. However, the first gate's lower metal layer exhibits a modified work function different from a work function exhibited by the second gate's lower metal layer. The first gate's lower metal layer may contain less oxygen and/or carbon in comparison to the second gate's lower metal layer. The first gate's lower metal layer may contain more nitrogen in comparison to the second gate's lower metal layer. The first gate may be a n-channel gate and the second gate may be a p-channel gate.

摘要翻译： 晶体管栅极形成方法包括形成第一和第二晶体管栅极。 两个栅极中的每一个包括下金属层和上金属层。 第一栅极的下金属层源自表现出与第二栅极的下金属层源自的沉积材料所表现的功函数相同的功函数的沉积材料。 然而，第一栅极的下部金属层表现出与第二栅极的下部金属层所表现的功函数不同的修正功函数。 与第二栅极的下金属层相比，第一栅极的下金属层可以含有较少的氧和/或碳。 与第二栅极的下金属层相比，第一栅极的下金属层可以含有更多的氮。 第一栅极可以是n沟道栅极，第二栅极可以是p沟道栅极。

公开(公告)号：US07112542B2

公开(公告)日：2006-09-26

申请号：US10330719

申请日：2002-12-27

申请人： Werner Juengling ,  Kirk D. Prall ,  Ravi Iyer ,  Gurtej S. Sandhu ,  Guy Blalock

发明人： Werner Juengling ,  Kirk D. Prall ,  Ravi Iyer ,  Gurtej S. Sandhu ,  Guy Blalock

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/76

CPC分类号： H01L21/7682 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/02167 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  Y10T428/12014 ,  Y10T428/24149 ,  Y10T428/249921 ,  Y10T428/25 ,  Y10T428/259 ,  H01L2924/00

摘要： Methods of forming insulating materials between conductive elements include forming a material adjacent a conductive electrical component comprising: partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. Other methods include forming a material between a pair of conductive electrical components comprising: forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. Some embodiments include an insulating material adjacent a conductive electrical component, such material comprising a matrix and at least one void within the matrix.

摘要翻译： 在导电元件之间形成绝缘材料的方法包括形成邻近导电电气部件的材料，该材料包括：部分蒸发物质以形成邻近导电电气部件的基体，所述基体在其内具有至少一个空隙。 其他方法包括在一对导电电气部件之间形成材料，包括：在一个质量块内形成一对导电的电气部件，并由该质量块的一大片分隔; 在所述物体的宽度内形成至少一个支撑构件，所述支撑构件不包括导电互连; 以及使所述质量块的膨胀程度有效地在所述支撑构件和所述一对导电电气部件中的每一个之间形成至少一个空隙。 一些实施例包括邻近导电电气部件的绝缘材料，这种材料包括基质和基质内的至少一个空隙。

公开(公告)号：US07037829B2

公开(公告)日：2006-05-02

申请号：US10355667

申请日：2003-01-31

申请人： Ravi Iyer ,  Yongjun Jeff Hu ,  Luan Tran ,  Brent Gilgen

发明人： Ravi Iyer ,  Yongjun Jeff Hu ,  Luan Tran ,  Brent Gilgen

IPC分类号： H01L21/44

CPC分类号： H01L21/76846 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/7687 ,  H01L21/76889 ,  H01L23/485 ,  H01L27/10855 ,  H01L28/84 ,  H01L28/90 ,  H01L29/456 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： Various embodiments of the invention described herein reduce contact resistance to a silicon-containing material using a first refractory metal material overlying the silicon-containing material and a second refractory metal material overlying the first refractory metal material. Each refractory metal material is a conductive material containing a refractory metal and an impurity. The first refractory metal material is a metal-rich material, containing a level of its impurity at less than a stoichiometric level. The second refractory metal material has a lower affinity for the impurities than does the first refractory metal material. The second refractory metal material can thus serve as an impurity donor during an anneal or other exposure to heat. This net migration of the impurities to the first refractory metal material limits growth of a metal silicide interface between the first refractory metal material and the underlying silicon-containing material, thereby providing ohmic contact with attendant thermal tolerance.

公开(公告)号：US06977225B2

公开(公告)日：2005-12-20

申请号：US10706244

申请日：2003-11-12

申请人： Ravi Iyer ,  Sujit Sharan

发明人： Ravi Iyer ,  Sujit Sharan

IPC分类号： H01L21/285 ,  H01L21/44

CPC分类号： C23C16/08 ,  H01L21/28556 ,  H01L21/28568 ,  Y10S438/909

摘要： A new process for depositing titanium metal layers via chemical vapor deposition is disclosed. The process provides deposited titanium layers having a high degree of conformality, even in trenches and contact openings having aspect ratios greater than 1:5.

摘要翻译： 公开了一种通过化学气相沉积沉积钛金属层的新工艺。 该方法即使在具有大于1:5的纵横比的沟槽和接触开口中也提供具有高度保形性的沉积钛层。