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    SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE
    62.
    发明申请
    SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE 有权
    半导体器件，电子元件和电子器件

    公开(公告)号：US20160086958A1

    公开(公告)日：2016-03-24

    申请号：US14856097

    申请日：2015-09-16

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Munehiro KOZUMA ,  Takayuki IKEDA ,  Yoshiyuki KUROKAWA ,  Takeshi AOKI

    IPC: H01L27/11 ,  H01L29/786

    CPC classification number: H01L27/11 ,  G11C11/24 ,  G11C14/0009 ,  H01L27/10814 ,  H01L29/7869

    Abstract: A semiconductor device has a function of storing data and includes an output terminal, a first terminal, a second terminal, a first circuit, and second circuits. The first circuit has a function of keeping the potential of the output terminal to be a high-level or low-level potential. The second circuits each include a first pass transistor and a second pass transistor which are electrically connected in series, a first memory circuit, and a second memory circuit. The first and second memory circuits each have a function of making a potential retention node in an electrically floating state. The potential retention nodes of the first and second memory circuits are electrically connected to gates of the first and second pass transistors, respectively. A transistor including an oxide semiconductor layer may be provided in the first and second memory circuits.

    Abstract translation: 半导体器件具有存储数据的功能，并且包括输出端子，第一端子，第二端子，第一电路和第二电路。 第一电路具有将输出端子的电位保持为高电平或低电位的功能。 第二电路各自包括串联电连接的第一传输晶体管和第二传输晶体管，第一存储器电路和第二存储器电路。 第一和第二存储器电路各自具有使电位保持节点处于电浮动状态的功能。 第一和第二存储器电路的电势保持节点分别电连接到第一和第二传输晶体管的栅极。 包括氧化物半导体层的晶体管可以设置在第一和第二存储器电路中。

    SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC APPLIANCE
    63.
    发明申请
    SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC APPLIANCE 有权
    半导体器件，电子元件和电子器件

    公开(公告)号：US20150221672A1

    公开(公告)日：2015-08-06

    申请号：US14609888

    申请日：2015-01-30

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Munehiro KOZUMA ,  Atsushi MIYAGUCHI

    IPC: H01L27/12 ,  H01L29/786

    CPC classification number: H01L27/1207 ,  H01L27/1225 ,  H01L29/785 ,  H01L29/7869 ,  H01L29/78696

    Abstract: A semiconductor device with a novel structure that can consume less power and have a reduced size of a circuit. In the semiconductor device, when configuration operation is started in a path transistor in a configuration memory, supply of an H-level potential to a signal pass node is stopped and then the potential of the signal pass node is set at L level, whereby configuration data is input to a memory potential retaining node, which is a gate of the path transistor. After the configuration operation is completed, the supply of the H-level potential to the signal pass node is resumed so that capacitive coupling occurs between the path transistor and the memory potential retaining node and increase the gate potential of the path transistor, so that a boosting effect is obtained. The above structure eliminates the need for a keeper circuit, reducing the power consumption and the circuit area.

    Abstract translation: 具有新颖结构的半导体器件，其能够消耗更少的功率并且具有减小的电路尺寸。 在半导体装置中，当在配置存储器中的路径晶体管中开始配置操作时，停止向信号通过节点提供H电平电位，然后将信号传递节点的电位设置为L电平，由此配置 数据被输入到作为路径晶体管的栅极的存储器电位保持节点。 在配置操作完成之后，恢复向信号通过节点提供H电平的电位，使得在路径晶体管和存储器电位保持节点之间发生电容耦合并增加路径晶体管的栅极电位，使得 获得增效作用。 上述结构消除了对保持器电路的需要，降低了功耗和电路面积。

    SEMICONDUCTOR DEVICE
    65.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20140267864A1

    公开(公告)日：2014-09-18

    申请号：US14294556

    申请日：2014-06-03

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Hikaru TAMURA ,  Munehiro KOZUMA

    IPC: H04N5/378

    CPC classification number: H01L27/14643 ,  G02F1/1362 ,  G02F2001/13312 ,  H01L27/1225 ,  H01L27/14632 ,  H01L27/1464 ,  H04N5/378

    Abstract: An object is to achieve low-power consumption by reducing the off-state current of a transistor in a photosensor. A semiconductor device including a photosensor having a photodiode, a first transistor, and a second transistor; and a read control circuit including a read control transistor, in which the photodiode has a function of supplying charge based on incident light to a gate of the first transistor; the first transistor has a function of storing charge supplied to its gate and converting the charge stored into an output signal; the second transistor has a function of controlling reading of the output signal; the read control transistor functions as a resistor converting the output signal into a voltage signal; and semiconductor layers of the first transistor, the second transistor, and the read control transistor are formed using an oxide semiconductor.

    Abstract translation: 目的是通过降低光电传感器中的晶体管的截止电流来实现低功耗。 一种半导体器件，包括具有光电二极管的光传感器，第一晶体管和第二晶体管; 以及包括读取控制晶体管的读取控制电路，其中光电二极管具有基于入射光向第一晶体管的栅极提供电荷的功能; 第一晶体管具有存储提供给其栅极的电荷并将存储的电荷转换为输出信号的功能; 第二晶体管具有控制输出信号的读取的功能; 读控制晶体管用作将输出信号转换成电压信号的电阻器; 并且使用氧化物半导体形成第一晶体管，第二晶体管和读控制晶体管的半导体层。

    ELECTRONIC DEVICE
    66.
    发明申请
    ELECTRONIC DEVICE 有权

    公开(公告)号：US20250004546A1

    公开(公告)日：2025-01-02

    申请号：US18711988

    申请日：2022-11-25

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yuki OKAMOTO ,  Minato ITO ,  Munehiro KOZUMA ,  Tatsuya ONUKI

    IPC: G06F3/01 ,  G02B27/01

    Abstract: An electronic device with a novel structure is provided. The electronic device includes a display apparatus, a gaze detection portion, and an arithmetic portion. The display apparatus includes a display portion divided into a plurality of sub-display portions and a functional circuit including a luminance conversion circuit. The gaze detection portion has a function of detecting the user's gaze. The arithmetic portion has a function of allocating the plurality of sub-display portions to a first section or a second section with the use of the detection result of the gaze detection portion. The functional circuit has a function of performing display on the sub-display portion included in the first section with a first driving frequency and performing display on the sub-display portion included in the second section with a second driving frequency lower than the first driving frequency. The luminance conversion circuit has a function of converting image data displayed on the second section to image data with reduced luminance to be displayed in the sub-display portion.

    SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
    69.
    发明公开
    SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20230326491A1

    公开(公告)日：2023-10-12

    申请号：US17922659

    申请日：2021-05-06

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takeshi AOKI ,  Yoshiyuki KUROKAWA ,  Munehiro KOZUMA ,  Takuro KANEMURA ,  Tatsunori INOUE

    IPC: G11C5/10 ,  G11C11/22 ,  H10B53/30 ,  H01L29/66 ,  H01L29/78

    CPC classification number: G11C5/10 ,  G11C11/221 ,  H01L29/6684 ,  H01L29/78391 ,  H10B53/30

    Abstract: A semiconductor device with a small circuit area and low power consumption is provided. The semiconductor device includes first to fourth cells, a current mirror circuit, and first to fourth wirings, and the first to fourth cells each include a first transistor, a second transistor, and a capacitor. In each of the first to fourth cells, a first terminal of the first transistor is electrically connected to a first terminal of the capacitor and a gate of the second transistor. The first wiring is electrically connected to first terminals of the second transistors in the first cell and the second cell, the second wiring is electrically connected to first terminals of the second transistors in the third cell and the fourth cell, the third wiring is electrically connected to second terminals of the capacitors in the first cell and the third cell, and the fourth wiring is electrically connected to second terminals of the capacitors in the second cell and the fourth cell. The current mirror circuit is electrically connected to the first wiring and the second wiring.

    SEMICONDUCTOR DEVICE
    70.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230297339A1

    公开(公告)日：2023-09-21

    申请号：US18013916

    申请日：2021-07-05

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yuki OKAMOTO ,  Minato ITO ,  Munehiro KOZUMA

    IPC: G06F7/575 ,  G11C11/405 ,  H10B12/00

    CPC classification number: G06F7/575 ,  G11C11/405 ,  H10B12/00

    Abstract: A semiconductor device with a novel structure is provided. A first memory circuit portion includes a first memory circuit for retaining a plurality of pieces of first weight data. A second memory circuit portion includes a second memory circuit for retaining a plurality of pieces of second weight data. A first arithmetic circuit portion includes a first arithmetic circuit, a first switching circuit, and a third switching circuit. A second arithmetic circuit portion includes a second arithmetic circuit, a second switching circuit, and a fourth switching circuit. The first switching circuit has a function of supplying any one of the plurality of pieces of the first weight data to a first wiring. The second switching circuit has a function of supplying any one of the plurality of pieces of the second weight data to a second wiring. The third switching circuit has a function of supplying to the first arithmetic circuit the first weight data supplied to the first wiring or the second weight data supplied to the second wiring. The fourth switching circuit has a function of supplying to the second arithmetic circuit the first weight data supplied to the first wiring or the second weight data supplied to the second wiring.

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