公开(公告)号：US07101436B2

公开(公告)日：2006-09-05

申请号：US10603821

申请日：2003-06-26

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： C30B29/16

CPC分类号： G03B21/56 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1012

摘要： A crystallization apparatus includes an optical illumination system to illuminate a phase shift mask and which irradiates an amorphous semiconductor film with a light beam having an inverse peak type light intensity distribution including a minimum light intensity in a point corresponding to a phase shift portion of the phase shift mask to produce a crystallized semiconductor film. A wavefront dividing element is disposed on a light path between the optical illumination system and the phase shift mask. The wavefront dividing element wavefront-divides the light beam supplied from the optical illumination system into a plurality of light beams, and condenses the wavefront-divided light beams in the corresponding phase shift portion or in the vicinity of the portion.

摘要翻译： 结晶装置包括：光照射系统，用于照射相移掩模，并且对具有反相峰值型光强度分布的光束照射非晶半导体膜，所述光束具有相对于相的相移部分的点的最小光强度 移位掩模以产生结晶半导体膜。 波前分割元件设置在光学照明系统和相移掩模之间的光路上。 波前分割元件将从光学照明系统提供的光束前后分割为多个光束，并将波前划分的光束聚集在相应的相移部分或该部分附近。

公开(公告)号：US07087505B2

公开(公告)日：2006-08-08

申请号：US10755303

申请日：2004-01-13

申请人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Fumiki Nakano

发明人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Fumiki Nakano

IPC分类号： H01L21/20

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L29/66757 ,  H01L29/78675

摘要： A method of manufacturing a thin-film semiconductor device substrate includes a step of forming a non-single crystalline semiconductor thin film on a base layer, and an annealing step of irradiating the non-single crystalline semiconductor thin film with an energy beam to enhance crystallinity of a non-single crystalline semiconductor constituting the non-single crystalline semiconductor thin film. The annealing step includes simultaneously irradiating the non-single crystalline semiconductor thin film with a plurality of energy beams to form a plurality of unit regions each including at least one irradiated region irradiated with the energy beam and at least one non-irradiated region that is not irradiated with the energy beam.

公开(公告)号：US20060065185A1

公开(公告)日：2006-03-30

申请号：US11224014

申请日：2005-09-13

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： C30B23/00 ,  C30B28/12 ,  C30B28/14 ,  C30B25/00

CPC分类号： H01L29/78675 ,  B23K26/066 ,  B23K26/073 ,  B23K26/0734 ,  G02B5/02 ,  G02B5/3083 ,  G03F1/28 ,  G03F1/34 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/66757 ,  Y10T117/10

摘要： A crystallization apparatus includes an illumination system which applies illumination light for crystallization to a non-single-crystal semiconductor film, and a phase shifter which includes first and second regions disposed to form a straight boundary and transmitting the illumination light from the illumination system by a first phase retardation therebetween, and phase-modulates the illumination light to provide a light intensity distribution having an inverse peak pattern that light intensity falls in a zone of the non-single-crystal semiconductor film containing an axis corresponding to the boundary. The phase shifter further includes a small region which extends into at least one of the first and second regions from the boundary and transmits the illumination light by a second phase retardation with respect to the at least one of the first and second regions.

公开(公告)号：US06987035B2

公开(公告)日：2006-01-17

申请号：US10857941

申请日：2004-06-02

申请人： Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Yoshinobu Kimura

发明人： Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Yoshinobu Kimura

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  H01L21/2026 ,  H01L29/66772

摘要： A method for forming a crystallized semiconductor layer includes preparing a non-single-crystal semiconductor layer in which at least one crystal seed is formed, and irradiating with an energy ray the non-single-crystal semiconductor layer having the crystal seed formed therein to allow a crystal to laterally grow from the crystal seed in the non-single-crystal semiconductor layer, irradiation of the energy ray is carried out by positioning to at least a part of the crystal seed an area having a minimum intensity value of the energy ray, the energy ray having a confirmation that an area having a maximum intensity value of the energy ray is continuously reduced to the area having the minimum intensity value in an irradiated surface.

摘要翻译： 一种形成结晶化半导体层的方法包括制备其中形成至少一个晶种的非单晶半导体层，并且用能量线照射其中形成晶种的非单晶半导体层以允许 在非单晶半导体层中从晶种横向生长的晶体，通过将至少一部分晶种定位到晶种的至少一部分，进行能量射线的最小强度值的区域的照射， 能量射线确认具有能量射线的最大强度值的区域连续地减少到照射表面中具有最小强度值的区域。

公开(公告)号：US06913986B2

公开(公告)日：2005-07-05

申请号：US10240570

申请日：2001-04-04

申请人： Mikihiko Nishitani ,  Masashi Goto

发明人： Mikihiko Nishitani ,  Masashi Goto

IPC分类号： G02F1/1368 ,  H01L21/20 ,  H01L21/205 ,  H01L21/00

CPC分类号： H01L21/02422 ,  G02F1/1368 ,  H01L21/02532 ,  H01L21/0262

摘要： A method of fabricating a thin film includes: forming, on a substrate, a thin film with film properties varying from region to region on the substrate, by selectively heating the substrate; and patterning the thin film in a predetermined pattern by etching the thin film to selectively remove only a portion of the thin film with specified film properties. The method reduces the fabrication process temperature and the number of fabrication steps, while inhibiting degradation in device performance.

摘要翻译： 一种制造薄膜的方法包括：通过选择性地加热所述衬底，在衬底上形成膜性质在衬底上的区域之间变化的薄膜; 并通过蚀刻薄膜以预定图案形成薄膜，以选择性地仅去除具有特定膜特性的薄膜的一部分。 该方法降低了制造工艺温度和制造步骤的数量，同时抑制了器件性能的降低。

公开(公告)号：US20050048383A1

公开(公告)日：2005-03-03

申请号：US10958396

申请日：2004-10-06

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： B23K26/06 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786 ,  H01L31/036 ,  G21K5/10 ,  H01L29/04 ,  G03F9/00 ,  H01J37/08

CPC分类号： H01L21/02678 ,  B23K26/066 ,  H01L21/2026 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/78675 ,  Y10S117/90 ,  Y10S117/904 ,  Y10S117/905 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A crystallization apparatus includes an illumination system which illuminates a phase-shift mask and an image-forming optical system arranged in an optical path between the phase-shift mask and a semiconductor film. The semiconductor film is irradiated with a light beam having a light intensity distribution of inverted peak patterns whose light intensity is the lowest in portions corresponding to phase shift sections to form a crystallized semiconductor film. The image-forming optical system is located to optically conjugate the phase-shift mask and the semiconductor film and has an aberration corresponding to the given wavelength range to form a light intensity distribution of inverted peak patterns with no swell of intensity in the middle portion.

摘要翻译： 结晶装置包括照射相移掩模的照明系统和布置在相移掩模和半导体膜之间的光路中的成像光学系统。 用对应于相移部分的部分的光强度最低的具有反相峰值图案的光强度分布的光束照射半导体膜，以形成结晶的半导体膜。 成像光学系统被定位为将相移掩模和半导体膜光学共轭，并且具有对应于给定波长范围的像差，以形成中间部分没有强度波动的反向峰值图案的光强度分布。

公开(公告)号：US06548380B1

公开(公告)日：2003-04-15

申请号：US09658667

申请日：2000-09-08

申请人： Masashi Goto ,  Mikihiko Nishitani ,  Masaharu Terauchi

发明人： Masashi Goto ,  Mikihiko Nishitani ,  Masaharu Terauchi

IPC分类号： H01L2120

CPC分类号： H01L29/66765 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02672 ,  H01L29/78678 ,  Y02E10/545 ,  Y02E10/546

摘要： By applying ion or optical energy or catalytic effects at the time of depositing a crystalline silicon thin film, improvements in crystallinity of the crystalline silicon thin film in proximities of an interface of a substrate or smoothing of its surface may be achieved. With this arrangement, it is possible to achieve improvements in crystallinity of the crystalline silicon film that is formed in a low temperature condition through CVD method and to prevent concaves and convexes from being formed on its surface or to prevent oxidation of grain fields, and it is accordingly possible to provide a thin film transistor, a semiconductor device such as a solar cell and methods for manufacturing these that exhibit superior characteristics and reliability.

摘要翻译： 通过在沉积晶体硅薄膜时施加离子或光能或催化作用，可以实现晶体硅薄膜在基底界面附近或其表面平滑度附近的结晶度的改善。 通过这种布置，可以通过CVD法在低温条件下形成的结晶硅膜的结晶度得到改善，并且防止在其表面上形成凹凸或防止晶粒的氧化，并且 因此可以提供薄膜晶体管，诸如太阳能电池的半导体器件及其制造方法，其具有优异的特性和可靠性。

公开(公告)号：US5633033A

公开(公告)日：1997-05-27

申请号：US420183

申请日：1995-04-11

申请人： Mikihiko Nishitani ,  Takayuki Negami ,  Takahiro Wada

发明人： Mikihiko Nishitani ,  Takayuki Negami ,  Takahiro Wada

IPC分类号： H01L31/032 ,  C23C16/52 ,  C23C16/06

CPC分类号： H01L31/0322 ,  Y02E10/541

摘要： A method for manufacturing an ABC.sub.2 chalcopyrite film (wherein A represents Cu or Ag, B represents In, Ga or Al, C represents S, Se or Te) comprises; a first step of forming a film of a composition of ABC.sub.2 containing element A in excess; a second step of exposing the film formed in the first step to a flux or gas containing element B and C, or to a gas or flux containing element A, B and C but containing element B in excess; and monitoring an electrical or optical property of the film in order to determine an end point of the second step where the electrical or optical property of the film demonstrates a specific change.

摘要翻译： 一种制备ABC2黄铜矿膜的方法（其中A表示Cu或Ag，B表示In，Ga或Al，C表示S，Se或Te）包括： 形成含有过量的元素A的ABC2的组合物的膜的第一工序; 将在第一步骤中形成的膜暴露于含有助熔剂或气体的元素B和C的第二步骤，或者将含有元素A，B和C但含有元素B的气体或助熔剂过量的第二步骤; 以及监测胶片的电气或光学性能，以便确定第二步骤的终点，其中胶片的电或光学特性表现出特定的变化。

公开(公告)号：US5567469A

公开(公告)日：1996-10-22

申请号：US458015

申请日：1995-06-01

申请人： Takahiro Wada ,  Mikihiko Nishitani ,  Takayuki Negami

发明人： Takahiro Wada ,  Mikihiko Nishitani ,  Takayuki Negami

IPC分类号： H01L31/04 ,  H01L21/36 ,  H01L31/032 ,  B05D1/36

CPC分类号： H01L21/02422 ,  H01L21/02491 ,  H01L21/02568 ,  H01L21/02614 ,  H01L21/02631 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

摘要： A chalcopyrite compound, for instance, CuInS.sub.2 or CuInSe.sub.2, is prepared by subjecting a thin film containing copper metal, indium metal, and an indium compound or a compound which contains both indium and copper, selected from the group consisting of oxides, sulfides and selenides, with heat under a reducing atmosphere containing at least one of the Group VIb element or under an atmosphere containing a reducing compound of at least one of the Group VIb element, thereby converting said thin film into a chalcopyrite compound.

摘要翻译： 黄铜矿化合物，例如CuInS 2或CuInSe 2，通过使含有铜金属，铟金属和铟化合物的薄膜或含有铟和铜的化合物，选自氧化物，硫化物和硒化物 在含有VIb族元素中的至少一种的还原气氛下或在含有VIb族元素中至少一种的还原性化合物的气氛下进行加热，从而将所述薄膜转化为黄铜矿化合物。

公开(公告)号：US08845929B2

公开(公告)日：2014-09-30

申请号：US13811139

申请日：2011-11-24

申请人： Osamu Inoue ,  Hiroshi Asano ,  Masahiro Sakai ,  Mikihiko Nishitani ,  Masumi Izuchi

发明人： Osamu Inoue ,  Hiroshi Asano ,  Masahiro Sakai ,  Mikihiko Nishitani ,  Masumi Izuchi

IPC分类号： C09K11/59 ,  C09K11/70 ,  C09K11/64 ,  C09K11/62 ,  H01L33/28

CPC分类号： C09K11/703 ,  C09K11/623 ,  C09K11/642 ,  H01L33/285

摘要： The present invention provides a zinc oxide-based ultraviolet light emitting material showing intense emission in the ultraviolet region. The present invention is an ultraviolet light emitting material containing: zinc and oxygen as main components; at least one element selected from the group consisting of aluminum, gallium, and indium, as a first sub-component; and phosphorus as a second sub-component. This material has n-type conductivity.

摘要翻译： 本发明提供一种在紫外线区域显示强烈发射的氧化锌系紫外线发光材料。 本发明是以锌，氧为主要成分的紫外线发光材料， 选自由铝，镓和铟组成的组中的至少一种元素作为第一子组分; 和磷作为第二子组分。 该材料具有n型导电性。