公开(公告)号：US20120326339A1

公开(公告)日：2012-12-27

申请号：US13421126

申请日：2012-03-15

申请人： Nobuhito SUZUYA ,  Atsushi Yoshimura ,  Hideko Mukaida

发明人： Nobuhito SUZUYA ,  Atsushi Yoshimura ,  Hideko Mukaida

IPC分类号： H01L21/56 ,  H01L23/28

CPC分类号： H01L23/3121 ,  H01L21/565 ,  H01L23/295 ,  H01L23/3171 ,  H01L25/0657 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2924/00012

摘要： According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The method includes: stacking and adhering a second semiconductor chip on a first semiconductor chip via an adhesive layer; adjusting at least one of an elasticity modulus of the adhesive layer, a sink amount of the adhesive layer, a thickness of a protective film at a surface of the first chip, and an elasticity modulus of the protective film such that “y” in a following formula is 70 or less; and sealing the chips by a molding resin with filler particles. y=74.7−82.7a1+273.2a2−9882a3+65.8a4 a1: a logarithm of the modulus of elasticity [MPa] of the adhesive layer a2: the sink amount [mm] of the adhesive layer a3: the thickness [mm] of the protective film a4: a logarithm of the modulus of elasticity [MPa] of the protective film

摘要翻译： 根据一个实施例，公开了一种半导体器件的制造方法。 该方法包括：通过粘合剂层将第二半导体芯片堆叠并粘附在第一半导体芯片上; 调整粘合剂层的弹性模量，粘合剂层的下沉量，第一芯片的表面处的保护膜的厚度和保护膜的弹性模量中的至少一个，使得下式中的y 是70以下; 并通过具有填料颗粒的模制树脂密封碎屑。 y = 74.7-82.7a1 + 273.2a2-9882a3 + 65.8a4 a1：粘合剂层的弹性模量[MPa]的对数a2：粘合剂层的吸收量[mm] a3：厚度[mm] 保护膜a4是保护膜的弹性模量[MPa]的对数

公开(公告)号：US08302889B2

公开(公告)日：2012-11-06

申请号：US13177137

申请日：2011-07-06

申请人： Naoya Hashii ,  Keishi Nakano ,  Tsuyoshi Munezane ,  Atsushi Yoshimura ,  Manabu Miyaki

发明人： Naoya Hashii ,  Keishi Nakano ,  Tsuyoshi Munezane ,  Atsushi Yoshimura ,  Manabu Miyaki

IPC分类号： B05B1/00

CPC分类号： F02M61/1853 ,  F02M51/0682 ,  F02M2200/8084 ,  Y10S239/90

摘要： A fuel injection valve has a valve body for opening and closing a valve seat, and receives an operation signal from a control unit to operate the valve body so that fuel is injected from a plurality of injection holes formed in an injection hole plate welded through a welded portion to a downstream side of the valve seat while passing through a gap between the valve body and the valve seat. The injection hole plate is formed at its central portion with a convex portion which is substantially axisymmetric with respect to a valve seat axis and which has a circular-arc shaped cross section, and the welded portion is also substantially axisymmetric with respect to the valve seat axis. Inlet portions of the injection holes are disposed in an injection hole arrangement surface diametrically outside of the convex portion and diametrically inside of a valve seat opening inner wall which is a minimum inside diameter of the valve seat, and the injection hole arrangement surface is coplanar with a surface having the welded portion.

摘要翻译： 燃料喷射阀具有用于打开和关闭阀座的阀体，并接收来自控制单元的操作信号以操作阀体，使得燃料从形成在喷射孔板中的多个喷射孔喷射，该喷射孔通过 在通过阀体和阀座之间的间隙的同时，将其焊接到阀座的下游侧。 喷孔板在其中央部形成有相对于阀座轴线大致轴对称且具有圆弧形截面的凸部，焊接部也相对于阀座大致轴对称 轴。 喷射孔的入口部分直径位于凸起部分的外侧的喷孔配置表面中，并且直径位于阀座开口内壁的内侧，阀座开口内壁是阀座的最小内径，并且喷射孔配置表面与 具有焊接部的表面。

公开(公告)号：US07880308B2

公开(公告)日：2011-02-01

申请号：US11602323

申请日：2006-11-21

申请人： Atsushi Yoshimura ,  Yoshiaki Sugizaki

发明人： Atsushi Yoshimura ,  Yoshiaki Sugizaki

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L25/0657 ,  H01L23/49827 ,  H01L23/49833 ,  H01L2224/16 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06551 ,  H01L2225/06572 ,  H01L2225/06586 ,  H05K1/0269 ,  H05K3/4015 ,  H05K3/4046 ,  H05K3/462 ,  H05K3/4638 ,  H05K2201/097 ,  H05K2201/09918 ,  H05K2203/0126 ,  H05K2203/049 ,  H05K2203/166

摘要： There is disclosed a semiconductor device comprising at least two substrates, at least one wiring being provided in each of the substrates, the substrates being stacked such that major surfaces on one side of each thereof oppose each other and the wirings being connected between the major surfaces, and a plurality of connecting portions being provided adjacent to each other while connected to each wiring on the major surfaces opposing each other, at least one of the connecting portions provided on the same major surface being formed smaller than the adjacent other connecting portion, the connecting portions being provided at positions opposing each other one to one on the major surface, the connecting portions being connected so that the wirings are connected between the major surfaces, one connecting portion of a pair of the connecting portions connected one to one being formed smaller than the other connecting portion.

摘要翻译： 公开了包括至少两个基板的半导体器件，在每个基板中设置至少一个布线，所述基板被堆叠，使得它们的一侧的主表面彼此相对，并且布线连接在主表面之间 并且多个连接部分彼此相邻设置，同时连接到彼此相对的主表面上的每个布线，设置在相同主表面上的至少一个连接部分形成为小于相邻的另一个连接部分， 连接部分设置在主表面上彼此相对的位置处，连接部分连接成使得布线连接在主表面之间，一对连接的一对连接部分的一个连接部分形成较小 比另一个连接部分。

公开(公告)号：US07615413B2

公开(公告)日：2009-11-10

申请号：US11390285

申请日：2006-03-28

申请人： Atsushi Yoshimura ,  Tadanobu Ookubo

发明人： Atsushi Yoshimura ,  Tadanobu Ookubo

IPC分类号： H01L21/00

CPC分类号： H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/73 ,  H01L24/83 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/6839 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83855 ,  H01L2224/83856 ,  H01L2225/0651 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19106 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012

摘要： A first semiconductor element is bonded on a substrate. A complex film formed of integrated dicing film and adhesive film is affixed on a rear surface of a semiconductor wafer which is to be second semiconductor elements, the dicing film having a thickness within a range of not less than 50 μm nor more than 140 μm and a room temperature elastic modulus within a range of not less than 30 MPa nor more than 120 MPa, and the adhesive film having a thickness of 30 μm or more and a room temperature elastic modulus before curing within a range of not less than 500 MPa nor more than 1200 MPa. The semiconductor wafer together with the adhesive film is divided into the second semiconductor elements. The second semiconductor element is picked up from the dicing film to be bonded on the first semiconductor element.

摘要翻译： 第一半导体元件结合在基板上。 由作为第二半导体元件的半导体晶片的背面固定有由集成的切割膜和粘合膜形成的复合膜，该切割膜的厚度在不小于50μm，不大于140μm的范围内，并且 室温弹性模量在30MPa以上120MPa以下的范围内，粘合膜的厚度为30μm以上，固化前的室温弹性模量为500MPa以上， 超过1200MPa。 半导体晶片与粘合膜一起分为第二半导体元件。 第二半导体元件从要切割的第一半导体元件上的切割膜拾取。

公开(公告)号：US07361805B2

公开(公告)日：2008-04-22

申请号：US10515481

申请日：2003-05-20

申请人： Masahiro Yano ,  Takuichi Fuse ,  Utako Yamanouchi ,  Atsushi Yoshimura ,  Kazuyuki Doi

发明人： Masahiro Yano ,  Takuichi Fuse ,  Utako Yamanouchi ,  Atsushi Yoshimura ,  Kazuyuki Doi

IPC分类号： C12N15/29 ,  C12N15/82 ,  C12N5/04 ,  A01H5/00

CPC分类号： C12N15/827 ,  C07K14/415

摘要： A detailed linkage analysis of the Ehd1 region was performed with a large segregating population, essential for map-based cloning. As a result, the Ehd1 gene promoting rice heading (flowering) was successfully isolated. Rice heading time was also found to be altered upon introduction of this gene. Based on these facts, the newly isolated and identified Ehd1 gene is expected to be useful in promoting plant flowering.

摘要翻译： 进行了Ehd1区域的详细连锁分析，其具有大量的分离群体，对于基于地图的克隆而言是必不可少的。 结果，Ehd1基因促进水稻（开花）成功分离。 在引入该基因后，也发现水稻的时间也被改变。 基于这些事实，新分离鉴定的Ehd1基因有望用于促进植物开花。

公开(公告)号：US20070222051A1

公开(公告)日：2007-09-27

申请号：US11724303

申请日：2007-03-15

申请人： Atsushi Yoshimura ,  Hideko Mukaida

发明人： Atsushi Yoshimura ,  Hideko Mukaida

IPC分类号： H01L23/02

CPC分类号： H01L25/0657 ,  H01L24/73 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/20752

摘要： A stacked semiconductor device includes a first semiconductor element bonded on a circuit base. The first semiconductor element is electrically connected to a connection part of the circuit base via a first bonding wire. A second semiconductor element is bonded on the first semiconductor element via a second adhesive layer with a thickness of 50 μm or more. The second adhesive layer is formed of an insulating resin layer whose glass transition temperature is 135° C. or higher and whose coefficient of linear expansion at a temperature equal to or lower than the glass transition temperature is 100 ppm or less.

摘要翻译： 叠层半导体器件包括接合在电路基底上的第一半导体元件。 第一半导体元件经由第一接合线电连接到电路基座的连接部。 第二半导体元件经由厚度为50μm以上的第二粘合剂层接合在第一半导体元件上。 第二粘合层由玻璃化转变温度为135℃以上的绝缘树脂层形成，玻璃化转变温度以下的温度下的线膨胀系数为100ppm以下。

公开(公告)号：US07141872B2

公开(公告)日：2006-11-28

申请号：US10807311

申请日：2004-03-24

申请人： Atsushi Yoshimura

发明人： Atsushi Yoshimura

IPC分类号： H01L23/02

CPC分类号： H01L25/50 ,  H01L23/49833 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/16 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06541 ,  H01L2225/06572 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/1627 ,  H01L2924/00014

摘要： Disclosed is a method of manufacturing a semiconductor device, comprising preparing a first substrate including an integrated circuit chip, first connection terminals electrically connected to terminals of the integrated circuit chip, and a first connection portion spaced from the first connection terminals, preparing a second substrate including second connection terminals to be electrically connected to the first connection terminals and a second connection portion spaced from the second connection terminals, providing a metal material portion for bonding on the first connection portion or the second connection portion, and stacking the first substrate and the second substrate by connecting the first connection portion and the second connection portion together via the metal material portion by thermo compression bonding.

摘要翻译： 公开了一种制造半导体器件的方法，包括制备包括集成电路芯片的第一衬底，电连接到集成电路芯片的端子的第一连接端子和与第一连接端子间隔开的第一连接部分，制备第二衬底 包括与第一连接端子电连接的第二连接端子和与第二连接端子间隔开的第二连接部分，提供用于在第一连接部分或第二连接部分上接合的金属材料部分，并且将第一基板和 第二基板，其通过热压接而经由金属材料部分将第一连接部分和第二连接部分连接在一起。

公开(公告)号：US20060226520A1

公开(公告)日：2006-10-12

申请号：US11390285

申请日：2006-03-28

申请人： Atsushi Yoshimura ,  Tadanobu Ookubo

发明人： Atsushi Yoshimura ,  Tadanobu Ookubo

IPC分类号： H01L23/495

CPC分类号： H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/73 ,  H01L24/83 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/6839 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83855 ,  H01L2224/83856 ,  H01L2225/0651 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19106 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012

摘要： A first semiconductor element is bonded on a substrate. A complex film formed of integrated dicing film and adhesive film is affixed on a rear surface of a semiconductor wafer which is to be second semiconductor elements, the dicing film having a thickness within a range of not less than 50 μm nor more than 140 μm and a room temperature elastic modulus within a range of not less than 30 MPa nor more than 120 MPa, and the adhesive film having a thickness of 30 μm or more and a room temperature elastic modulus before curing within a range of not less than 500 MPa nor more than 1200 MPa. The semiconductor wafer together with the adhesive film is divided into the second semiconductor elements. The second semiconductor element is picked up from the dicing film to be bonded on the first semiconductor element.

公开(公告)号：US20050257292A1

公开(公告)日：2005-11-17

申请号：US10515481

申请日：2003-05-20

申请人： Masahiro Yano ,  Takuichi Fuse ,  Utako Yamanouchi ,  Atsushi Yoshimura ,  Kazuyuki Doi

发明人： Masahiro Yano ,  Takuichi Fuse ,  Utako Yamanouchi ,  Atsushi Yoshimura ,  Kazuyuki Doi

IPC分类号： A01H5/00 ,  C07K14/415 ,  C12N5/10 ,  C12N15/09 ,  C12N15/29 ,  C12N15/82 ,  C12N9/24 ,  A01H1/00 ,  C07H21/04 ,  C12N5/04

CPC分类号： C12N15/827 ,  C07K14/415

摘要： A detailed linkage analysis of the Ehd1 region was performed with a large segregating population, essential for map-based cloning. As a result, the Ehd1 gene promoting rice heading (flowering) was successfully isolated. Rice heading time was also found to be altered upon introduction of this gene. Based on these facts, the newly isolated and identified Ehd1 gene is expected to be useful in promoting plant flowering.

摘要翻译： 进行了Ehd1区域的详细连锁分析，其具有大量的分离群体，对于基于地图的克隆而言是必不可少的。 结果，Ehd1基因促进水稻（开花）成功分离。 在引入该基因后，也发现水稻的时间也被改变。 基于这些事实，新分离鉴定的Ehd1基因有望用于促进植物开花。

公开(公告)号：US06936123B2

公开(公告)日：2005-08-30

申请号：US10403870

申请日：2003-03-28

申请人： Yutaka Iseki ,  Akifumi Fujita ,  Atsushi Yoshimura ,  Takehiko Miura

发明人： Yutaka Iseki ,  Akifumi Fujita ,  Atsushi Yoshimura ,  Takehiko Miura

IPC分类号： B32B37/00 ,  B32B39/00 ,  B32B41/00 ,  H01G4/30 ,  B32B31/12 ,  B32B35/00

CPC分类号： B32B41/00 ,  B32B39/00 ,  B32B2038/042 ,  B32B2309/105 ,  B32B2309/72 ,  B32B2315/02 ,  B32B2457/16 ,  H01G4/30 ,  Y10T156/1062 ,  Y10T156/1322

摘要： To produce a capacitor with a target static capacitance, an apparatus for producing a laminated ceramic capacitor is adapted to measure the thickness of a green sheet and the area of an internal electrode by an in-line system and with high accuracy, and to laminate a calculated number of the green sheets based on the measured values. The apparatus includes a sheet-supplying unit, a sheet-thickness measuring unit, a laminating unit, and a discharging unit.

摘要翻译： 为了制造具有目标静电电容的电容器，用于制造层压陶瓷电容器的装置适于通过在线系统和高精度测量生片的厚度和内部电极的面积，并且将 基于测量值计算生坯片的数量。 该装置包括片材供应单元，片材厚度测量单元，层压单元和排出单元。