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    Semiconductor light receiving element and optical communication system
    61.
    发明授权
    Semiconductor light receiving element and optical communication system 有权
    半导体光接收元件和光通信系统

    公开(公告)号：US08035187B2

    公开(公告)日：2011-10-11

    申请号：US12362066

    申请日：2009-01-29

    申请人： Yoshinori Yamauchi ,  Takahiro Arakida ,  Rintaro Koda ,  Norihiko Yamaguchi ,  Yuji Masui ,  Tomoyuki Oki

    发明人： Yoshinori Yamauchi ,  Takahiro Arakida ,  Rintaro Koda ,  Norihiko Yamaguchi ,  Yuji Masui ,  Tomoyuki Oki

    IPC分类号： H01L31/00

    CPC分类号： H01L31/1055 ,  G02B6/42 ,  G02B6/4206 ,  G02B6/4246

    摘要： The present invention provides a semiconductor light receiving element capable of reducing capacity while minimizing increase in travel time of carriers. The semiconductor light receiving element includes a semiconductor stacked structure including a first conductivity type layer, a light absorbing layer, and a second conductivity type layer having a light incidence plane in order. The semiconductor light receiving element has an oxidation layer including a non-oxidation region and an oxidation region in a stacking in-plane direction in the light absorbing layer or between the first conductivity type layer and the light absorbing layer.

    摘要翻译： 本发明提供一种半导体光接收元件，其能够在最小化载体的行进时间的增加的同时降低容量。 半导体光接收元件包括具有第一导电类型层，光吸收层和具有光入射面的第二导电类型层的半导体堆叠结构。 半导体光接收元件在光吸收层中或第一导电型层与光吸收层之间具有包括非氧化区域和层叠面内方向的氧化区域的氧化层。

    Semiconductor light emitting device
    62.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US07965750B2

    公开(公告)日：2011-06-21

    申请号：US12385811

    申请日：2009-04-21

    申请人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Tomoyuki Oki ,  Naoki Jogan

    发明人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Tomoyuki Oki ,  Naoki Jogan

    IPC分类号： H01S5/00 ,  H01S3/094

    CPC分类号： H01S5/1833 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18316 ,  H01S5/18322 ,  H01S5/18325 ,  H01S5/18383 ,  H01S5/2086 ,  H01S5/3095 ,  H01S5/4087

    摘要： A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped first cladding layer, an undoped first active layer, a second-conductivity-type or undoped second cladding layer, a second-conductivity-type first contact layer, a first-conductivity-type second contact layer, a first-conductivity-type or undoped third cladding layer, an undoped second active layer, and a second-conductivity-type or undoped fourth cladding layer. The first conductive section is electrically connected to the first multilayer film reflecting mirror, the second conductive section is electrically connected to the second multilayer film reflecting mirror, and the third conductive section is electrically connected to the first contact layer and the second contact layer.

    摘要翻译： 半导体发光器件包括第一导电型第一多层膜反射镜和第二导电型第二多层膜反射镜; 空腔层; 以及第一导电部分，第二导电部分和第三导电部分。 空腔层具有包括第一导电型或未掺杂的第一包层，未掺杂的第一有源层，第二导电型或未掺杂的第二包覆层，第二导电类型的第一接触层，第一导电类型的第一接触层 导电型第二接触层，第一导电型或未掺杂第三包层，未掺杂的第二有源层和第二导电型或未掺杂的第四包覆层。 第一导电部电连接到第一多层膜反射镜，第二导电部与第二多层膜反射镜电连接，第三导电部与第一接触层和第二接触层电连接。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    66.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号：US20100193805A1

    公开(公告)日：2010-08-05

    申请号：US12648706

    申请日：2009-12-29

    申请人： Naoki JOGAN ,  Yuji Masui ,  Rintaro Koda ,  Takahiro Arakida

    发明人： Naoki JOGAN ,  Yuji Masui ,  Rintaro Koda ,  Takahiro Arakida

    IPC分类号： H01L33/00 ,  H01L31/02

    CPC分类号： H01S5/0264 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/18311

    摘要： A semiconductor light-emitting device includes a semiconductor light-emitting element including a first multilayer reflector, an active layer having a light-emitting region, and a second multilayer reflector in the stated order; a semiconductor light-detecting element disposed opposite the first multilayer reflector in relation to the semiconductor light-emitting element and including a light-absorbing layer configured to absorb light emitted from the light-emitting region; and an insulating oxidized layer disposed between the semiconductor light-emitting element and the semiconductor light-detecting element.

    摘要翻译： 半导体发光器件包括具有第一多层反射器，具有发光区域的有源层和按照所述顺序的第二多层反射器的半导体发光元件; 相对于所述半导体发光元件与所述第一多层反射体相对设置并且包括被配置为吸收从所述发光区域发射的光的光吸收层的半导体光检测元件; 以及设置在半导体发光元件和半导体光检测元件之间的绝缘氧化层。

    Optical waveguide and optical transmitting/receiving module
    68.
    发明授权
    Optical waveguide and optical transmitting/receiving module 有权
    光波导和光发射/接收模块

    公开(公告)号：US07260295B2

    公开(公告)日：2007-08-21

    申请号：US10541088

    申请日：2004-01-29

    申请人： Takahiro Arakida ,  Kenji Suzuki

    发明人： Takahiro Arakida ,  Kenji Suzuki

    IPC分类号： G02B6/26 ,  G02B6/42

    CPC分类号： G02B6/125 ,  G02B6/2804 ,  G02B6/4246

    摘要： An optical transmitting and receiving module for an optical waveguide performs both a transmitting operation and a receiving operation simultaneously. The linear first waveguide is provided such that one side is coupled to an optical fiber and the other side is coupled to a light receiving element. A second waveguide is coupled so as to meet and make an acute angle with the first waveguide. The second waveguide is shaped with a tapered portion adjacent to the first waveguide.

    摘要翻译： 用于光波导的光发射和接收模块同时执行发射操作和接收操作。 线性第一波导被设置为使得一侧耦合到光纤并且另一侧耦合到光接收元件。 第二波导被耦合以便与第一波导相遇并形成锐角。 第二波导形成有与第一波导相邻的锥形部分。

    Semiconductor laser device
    69.
    发明授权
    Semiconductor laser device 有权
    半导体激光器件

    公开(公告)号：US07230962B2

    公开(公告)日：2007-06-12

    申请号：US11264866

    申请日：2005-11-02

    申请人： Takahiro Arakida ,  Hisashi Kudo

    发明人： Takahiro Arakida ,  Hisashi Kudo

    IPC分类号： H01S5/00

    CPC分类号： H01S5/028 ,  H01S5/02461 ,  H01S5/0281

    摘要： An edge-emitting semiconductor laser includes a resonator structure having an active layer. A low reflection three-layer film is provided on in emitting edge face of the resonator structure and a high reflection multi-layer film is provided on a rear edge face of the resonator structure. The low reflection three-layer film is formed in an exemplary embodiment by sequentially stacking a first Al2O3 layer having a thickness of 10 nm, an Si3N4 film having a thickness of 190 nm, and a second Al2O3 layer having a thickness of 10 nm.

    摘要翻译： 边缘发射半导体激光器包括具有有源层的谐振器结构。 在谐振器结构的发射边缘面上设置低反射三层膜，并且在谐振器结构的后边缘面上设置高反射多层膜。 在示例性实施例中，通过顺序堆叠厚度为10nm的第一Al 2 O 3 O 3层，Si 3层，形成低反射三层膜 厚度为190nm的N 3 N 4 N膜和厚度为10nm的第二Al 2 O 3 O 3层。

    Optical waveguide, light source module, and optical information processing apparatus
    70.
    发明授权
    Optical waveguide, light source module, and optical information processing apparatus 失效
    光波导，光源模块和光信息处理装置

    公开(公告)号：US07116879B2

    公开(公告)日：2006-10-03

    申请号：US10987387

    申请日：2004-11-12

    申请人： Takahiro Arakida

    发明人： Takahiro Arakida

    IPC分类号： G02B6/10

    CPC分类号： G02B6/122 ,  G02B6/14 ,  G02B6/42

    摘要： The present invention is to provide an optical waveguide capable of allowing a desired incident light to efficiently propagate towards the light emission side and to emit therefrom, and capable of preventing unnecessary incident light from propagating, and in providing a light source module and an optical information processing apparatus using the optical waveguide. The optical waveguide comprises a bonded member of a substrate, a core layer and cladding layers, configured to introduce an incident line coming into the core layer toward a light emission side thereof. A metal layer for preventing the incident light coming into the cladding layer from propagating to the light emission side is formed in a pattern intercepting a sectional plane of light transmission of said cladding layer.

    摘要翻译： 本发明提供一种光波导，其能够使期望的入射光有效地向发光侧传播并从其发射，并且能够防止不必要的入射光传播，并且提供光源模块和光信息 使用该光波导的处理装置。 光波导包括基板的接合构件，芯层和包覆层，被配置为将入射到芯层中的入射线朝向其发光侧引入。 用于防止入射到包层的入射光传播到发光侧的金属层形成为截取所述包层的透光的截面的图案。