公开(公告)号：US06808951B2

公开(公告)日：2004-10-26

申请号：US09987884

申请日：2001-11-16

申请人： Yoshihiro Ikeda ,  Tsutomu Okazaki ,  Keisuke Tsukamoto ,  Hiroshi Yanagita ,  Daisuke Okada

发明人： Yoshihiro Ikeda ,  Tsutomu Okazaki ,  Keisuke Tsukamoto ,  Hiroshi Yanagita ,  Daisuke Okada

IPC分类号： H01L2100

CPC分类号： H01L27/11521 ,  H01L27/115 ,  H01L27/11524

摘要： An insulating film for protecting an upper portion of a control gate electrode is constituted by a silicon oxide film, and thereby stress affecting a gate oxide film and a substrate that is located below a bottom portion thereof is reduced. Further, an etching prevention film consisting of a silicon nitride film is formed on a sidewall of the silicon oxide film, and thereby it is possible to prevent the sidewall of the silicon oxide film from being etched in a hydrofluoric acid cleaning step after processing of a gate electrode.

摘要翻译： 用于保护控制栅电极的上部的绝缘膜由氧化硅膜构成，从而降低了影响栅极氧化膜和位于其底部下方的衬底的应力。 此外，在氧化硅膜的侧壁上形成由氮化硅膜构成的防蚀膜，从而可以防止氧化硅膜的侧壁在氢氟酸清洗工序中被蚀刻 栅电极。

公开(公告)号：US10110728B2

公开(公告)日：2018-10-23

申请号：US11367433

申请日：2006-03-06

申请人： Shigeki Wakasa ,  Jun Ogishima ,  Daisuke Okada

发明人： Shigeki Wakasa ,  Jun Ogishima ,  Daisuke Okada

IPC分类号： G06F15/16 ,  H04M1/725 ,  H04L29/08 ,  G06F9/445

摘要： A theme change system includes a portable communication device; and a server apparatus, wherein the portable communication device and the server apparatus are connected to each other via a communication network. The portable communication device includes a theme request section making a request for theme data related to an interface between a user and a process execution part for performing processing in accordance with a request from the user to the server apparatus, a theme management section determining permission and non-permission about the reception of the theme data requested by the theme request section and storing, in a storage section, the theme data, and an interface output section outputting the interface on the basis of the theme data when the process execution part is started or while the process execution part is being started. The server apparatus includes a transmission section transmitting theme data to the portable communication device.

公开(公告)号：US08363285B2

公开(公告)日：2013-01-29

申请号：US12457028

申请日：2009-05-29

申请人： Saori Iura ,  Yasuyuki Igarashi ,  Masateru Kumagai ,  Daisuke Okada

发明人： Saori Iura ,  Yasuyuki Igarashi ,  Masateru Kumagai ,  Daisuke Okada

IPC分类号： G06F3/12 ,  G06F17/00 ,  G06F7/04 ,  G06K15/02 ,  H04N1/60 ,  H04N1/40

CPC分类号： H04N1/32144 ,  G06F21/608 ,  G06F21/6209 ,  G06F2221/2141 ,  H04N1/00222 ,  H04N1/00233 ,  H04N2201/0094 ,  H04N2201/323 ,  H04N2201/3246 ,  H04N2201/327 ,  H04N2201/3271

摘要： An image forming apparatus to print an image on a recording medium based on print data. The image forming apparatus includes a storing unit to store the print data, an image processing unit to perform image processing on image data included in the print data; a printing operation specification unit to specify implementation of a printing operation; a marking unit to embed marking data in the image data, a marking printing operation specification unit to specify implementation of a marking printing operation, a printing operation implementation unit to implement the printing operation or the marking printing operation, a print data determination unit to determine whether or not the print data includes a setting for the marking printing operation, and a printing operation change unit to change a printing operation performed by the printing operation implementation unit.

摘要翻译： 一种图像形成装置，用于基于打印数据在记录介质上打印图像。 图像形成装置包括存储打印数据的存储单元，对包含在打印数据中的图像数据执行图像处理的图像处理单元; 打印操作指定单元，用于指定打印操作的实现; 标记单元，用于将标记数据嵌入到图像数据中;标记打印操作指定单元，用于指定标记打印操作的实现;打印操作执行单元，用于实现打印操作或标记打印操作;打印数据确定单元， 无论打印数据是否包括标记打印操作的设置，以及打印操作改变单元，用于改变由打印操作执行单元执行的打印操作。

公开(公告)号：US07751255B2

公开(公告)日：2010-07-06

申请号：US12233670

申请日：2008-09-19

申请人： Digh Hisamoto ,  Kan Yasui ,  Tetsuya Ishimaru ,  Shinichiro Kimura ,  Daisuke Okada

发明人： Digh Hisamoto ,  Kan Yasui ,  Tetsuya Ishimaru ,  Shinichiro Kimura ,  Daisuke Okada

IPC分类号： G11C11/34 ,  G11C16/04 ,  G11C16/06

CPC分类号： G11C16/0425 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/3454 ,  G11C16/3459

摘要： An operation scheme for operating stably a semiconductor nonvolatile memory device is provided.When hot-hole injection is conducted in the semiconductor nonvolatile memory device of a split gate structure, the hot-hole injection is verified using a crossing point that does not change with time. Thus, an erased state can be verified without being aware of any time-varying changes.Also, programming or programming/erasure is conducted by repeating pulse voltage or multi-step voltage application to a gate section multiple times.

摘要翻译： 提供一种稳定运行半导体非易失性存储器件的操作方案。 当在分裂栅极结构的半导体非易失性存储器件中进行热空穴注入时，使用不随时间变化的交叉点来验证热孔注入。 因此，可以验证擦除状态，而不知道任何时变变化。 此外，通过将多次脉冲电压或多级电压施加到栅极部分进行编程或编程/擦除。

公开(公告)号：US20090190164A1

公开(公告)日：2009-07-30

申请号：US12320442

申请日：2009-01-27

申请人： Masateru Kumagai ,  Yasuyuki Igarashi ,  Hiroya Uruta ,  Saori Iura ,  Daisuke Okada

发明人： Masateru Kumagai ,  Yasuyuki Igarashi ,  Hiroya Uruta ,  Saori Iura ,  Daisuke Okada

IPC分类号： G06F3/12

CPC分类号： H04N1/32133 ,  H04N1/4406 ,  H04N1/4426 ,  H04N2201/0094 ,  H04N2201/3205 ,  H04N2201/3214 ,  H04N2201/3215 ,  H04N2201/3271

摘要： In an image forming apparatus, a setting management unit acquires at least one of first setting data and second setting data. The first setting data is information that specifies data to be included in the identification image from among the identification data and the second setting data is information that specifies a position of the identification image. An output control unit outputs (e.g., prints) output data including the identification image that is created based on at least one of the first setting data and the second setting data that is acquired by the setting management unit.

摘要翻译： 在图像形成装置中，设定管理部获取第一设定数据和第二设定数据中的至少一个。 第一设置数据是从识别数据中指定要包括在识别图像中的数据的信息，并且第二设置数据是指定识别图像的位置的信息。 输出控制单元基于由设置管理单元获取的第一设置数据和第二设置数据中的至少一个输出（例如，打印）包括创建的识别图像的输出数据。

公开(公告)号：US07259422B1

公开(公告)日：2007-08-21

申请号：US11653832

申请日：2007-01-17

申请人： Digh Hisamoto ,  Kan Yasui ,  Shinichiro Kimura ,  Daisuke Okada

发明人： Digh Hisamoto ,  Kan Yasui ,  Shinichiro Kimura ,  Daisuke Okada

IPC分类号： H01L29/788

CPC分类号： H01L29/792 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/42344 ,  H01L29/66833

摘要： A memory cell includes a selective gate and a memory gate arranged on one side surface of the selective gate. The memory gate includes one part formed on one side surface of the selective gate and the other part electrically isolated from the selective gate and a p-well through an ONO layer formed below the memory gate. A sidewall-shaped silicon oxide is formed on side surfaces of the selective gate, and a sidewall-shaped silicon dioxide layer and a silicon dioxide layer are formed on side surfaces of the memory gate. The ONO layer formed below the memory gate is terminated below the silicon oxide, and prevents generation of a low breakdown voltage region in the silicon oxide near an end of the memory gate during deposition of the silicon dioxide layer.

摘要翻译： 存储单元包括布置在选择栅极的一个侧表面上的选择栅极和存储栅极。 存储器栅极包括形成在选择栅极的一个侧表面上的一个部分和与选择栅极电隔离的另一部分，以及通过形成在存储栅极下方的ONO层的p阱。 在选择栅极的侧面上形成侧壁状的氧化硅，在存储栅的侧面形成侧壁状的二氧化硅层和二氧化硅层。 形成在存储器栅下方的ONO层终止在氧化硅的下方，并且防止在沉积二氧化硅层期间在存储栅的端部附近的硅氧化物中产生低的击穿电压区域。

公开(公告)号：US07245531B2

公开(公告)日：2007-07-17

申请号：US11198191

申请日：2005-08-08

申请人： Tsutomu Okazaki ,  Daisuke Okada ,  Kyoya Nitta ,  Toshihiro Tanaka ,  Akira Kato ,  Toshikazu Matsui ,  Yasushi Ishii ,  Digh Hisamoto ,  Kan Yasui

发明人： Tsutomu Okazaki ,  Daisuke Okada ,  Kyoya Nitta ,  Toshihiro Tanaka ,  Akira Kato ,  Toshikazu Matsui ,  Yasushi Ishii ,  Digh Hisamoto ,  Kan Yasui

IPC分类号： G11C11/34

CPC分类号： H01L27/1157 ,  G11C16/0425 ,  H01L21/28282 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/0649 ,  H01L29/4234 ,  H01L29/42344 ,  H01L29/518 ,  H01L29/66833 ,  H01L29/792

摘要： Memory cells are disposed in plural array form. Select gate electrodes of the memory cells arranged in an X direction are connected to one another by select gate lines respectively. Memory gate electrodes are connected by memory gate lines respectively. The memory gate lines respectively connected to the memory gate electrodes of the memory cells adjacent to one another through source regions interposed therebetween are not electrically connected to one another. Each of the select gate lines has a first portion that extends in the X direction, and a second portion 9b of which one end is connected to the first portion and extends in a Y direction. The memory gate line is formed on its corresponding sidewall of the select gate line with an insulating film interposed therebetween. The memory gate line has a contact section that extends in the X direction from over a second portion of the select gate line to over an element isolation region, and is connected to its corresponding wiring through a plug that buries a contact hole formed over the contact section.

摘要翻译： 存储单元以多个阵列形式布置。 选择沿X方向布置的存储单元的选择栅电极分别通过选择栅极线彼此连接。 存储器栅极电极分别由存储器栅极线连接。 分别连接到彼此相邻的存储单元的存储器栅极的存储栅极线通过其间的源极区域彼此不电连接。 每个选择栅极线具有在X方向上延伸的第一部分和其一端连接到第一部分并沿Y方向延伸的第二部分9b。 存储栅极线在其选择栅线的相应侧壁上形成有介于其间的绝缘膜。 存储栅极线具有接触部分，该接触部分在选择栅极线的第二部分上方在X方向上延伸到元件隔离区域上方，并且通过塞子连接到其对应的布线，所述插头埋设形成在触点上的接触孔 部分。

公开(公告)号：US20060239072A1

公开(公告)日：2006-10-26

申请号：US11472993

申请日：2006-06-23

申请人： Toshihiro Tanaka ,  Takashi Yamaki ,  Yutaka Shinagawa ,  Daisuke Okada ,  Digh Hisamoto ,  Kan Yasui ,  Tetsuya Ishimaru

发明人： Toshihiro Tanaka ,  Takashi Yamaki ,  Yutaka Shinagawa ,  Daisuke Okada ,  Digh Hisamoto ,  Kan Yasui ,  Tetsuya Ishimaru

IPC分类号： G11C16/04 ,  G11C11/34

CPC分类号： G11C16/10 ,  G11C16/0433

摘要： Disclosed here is a method for speeding up data writing and reducing power consumption by reducing the variation of the threshold voltage of each of non-volatile memory cells at data writing. When writing data in a memory cell, a voltage of about 8V is applied to the memory gate line, a voltage of about 5V is applied to the source line, a voltage of about 1.5V is applied to the selected gate line respectively. At that time, in the writing circuit, the writing pulse is 0, the writing latch output a High signal, and a NAND-circuit outputs a Low signal. And, a constant current of about 1 iA flows in a constant current source transistor and the bit line is discharged by a constant current of about 1 iA to flow a current in the memory cell.

摘要翻译： 这里公开了一种通过在数据写入时减小每个非易失性存储单元的阈值电压的变化来加速数据写入并降低功耗的方法。 当在存储单元中写入数据时，约8V的电压被施加到存储器栅极线，大约5V的电压被施加到源极线，大约1.5V的电压分别施加到所选择的栅极线。 此时，在写入电路中，写入脉冲为0，写入锁存器输出高电平信号，NAND电路输出低电平信号。 并且，在恒定电流源晶体管中流动约1IA的恒定电流，并且通过约1iA的恒定电流放电位线以使存储单元中的电流流动。

公开(公告)号：US20060206590A1

公开(公告)日：2006-09-14

申请号：US11367433

申请日：2006-03-06

申请人： Shigeki Wakasa ,  Jun Ogishima ,  Daisuke Okada

发明人： Shigeki Wakasa ,  Jun Ogishima ,  Daisuke Okada

IPC分类号： G06F15/16

CPC分类号： H04M1/72563 ,  G06F9/445 ,  H04L67/04 ,  H04L67/06 ,  H04M1/72525 ,  H04M1/72544

摘要： A theme change system includes a portable communication device; and a server apparatus, wherein the portable communication device and the server apparatus are connected to each other via a communication network. The portable communication device includes a theme request section making a request for theme data related to an interface between a user and a process execution part for performing processing in accordance with a request from the user to the server apparatus, a theme management section determining permission and non-permission about the reception of the theme data requested by the theme request section and storing, in a storage section, the theme data, and an interface output section outputting the interface on the basis of the theme data when the process execution part is started or while the process execution part is being started. The server apparatus includes a transmission section transmitting theme data to the portable communication device.

摘要翻译： 主题改变系统包括便携式通信设备; 以及服务器装置，其中便携式通信装置和服务器装置经由通信网络彼此连接。 便携式通信装置包括：主题请求部，对与用户和处理执行部之间的接口相关的主题数据进行请求，用于根据用户对服务器装置的请求进行处理;主题管理部， 对主题请求部分请求的主题数据的接收的不允许，并且在存储部分中存储主题数据以及当处理执行部分被启动时基于主题数据输出接口的接口输出部分 或者正在启动进程执行部分。 服务器装置包括将主题数据发送到便携式通信装置的发送部。

公开(公告)号：US20060028868A1

公开(公告)日：2006-02-09

申请号：US11198191

申请日：2005-08-08

申请人： Tsutomu Okazaki ,  Daisuke Okada ,  Kyoya Nitta ,  Toshihiro Tanaka ,  Akira Kato ,  Toshikazu Matsui ,  Yasushi Ishii ,  Digh Hisamoto ,  Kan Yasui

发明人： Tsutomu Okazaki ,  Daisuke Okada ,  Kyoya Nitta ,  Toshihiro Tanaka ,  Akira Kato ,  Toshikazu Matsui ,  Yasushi Ishii ,  Digh Hisamoto ,  Kan Yasui

IPC分类号： G11C11/34 ,  G11C5/06

CPC分类号： H01L27/1157 ,  G11C16/0425 ,  H01L21/28282 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/0649 ,  H01L29/4234 ,  H01L29/42344 ,  H01L29/518 ,  H01L29/66833 ,  H01L29/792

摘要： Memory cells are disposed in plural array form. Select gate electrodes of the memory cells arranged in an X direction are connected to one another by select gate lines respectively. Memory gate electrodes are connected by memory gate lines respectively. The memory gate lines respectively connected to the memory gate electrodes of the memory cells adjacent to one another through source regions interposed therebetween are not electrically connected to one another. Each of the select gate lines has a first portion that extends in the X direction, and a second portion 9b of which one end is connected to the first portion and extends in a Y direction. The memory gate line is formed on its corresponding sidewall of the select gate line with an insulating film interposed therebetween. The memory gate line has a contact section that extends in the X direction from over a second portion of the select gate line to over an element isolation region, and is connected to its corresponding wiring through a plug that buries a contact hole formed over the contact section.

摘要翻译： 存储单元以多个阵列形式布置。 选择沿X方向布置的存储单元的选择栅电极分别通过选择栅极线彼此连接。 存储器栅极电极分别由存储器栅极线连接。 分别连接到彼此相邻的存储单元的存储器栅极的存储栅极线通过其间的源极区域彼此不电连接。 每个选择栅极线具有在X方向上延伸的第一部分和其一端连接到第一部分并沿Y方向延伸的第二部分9b。 存储栅极线在其选择栅线的相应侧壁上形成有介于其间的绝缘膜。 存储栅极线具有接触部分，该接触部分在选择栅极线的第二部分上方在X方向上延伸到元件隔离区域上方，并且通过塞子连接到其对应的布线，所述插头埋设形成在触点上的接触孔 部分。