公开(公告)号：US08178958B2

公开(公告)日：2012-05-15

申请号：US11665548

申请日：2005-10-18

申请人： Kyosuke Ito ,  Junya Maruyama ,  Takuya Tsurume ,  Shunpei Yamazaki

发明人： Kyosuke Ito ,  Junya Maruyama ,  Takuya Tsurume ,  Shunpei Yamazaki

IPC分类号： H01L23/02

CPC分类号： H01L27/1266 ,  G06K19/07749 ,  H01L27/1214 ,  H01L27/13 ,  H01L2224/95001 ,  H01Q1/2225 ,  H01Q7/00 ,  Y10T29/49018

摘要： The present invention provides an antenna in that the adhesive intensity of a conductive body formed on a base film is increased, and a semiconductor device including the antenna. The invention further provides a semiconductor device with high reliability that is formed by attaching an element formation layer and an antenna, wherein the element formation layer is not damaged due to a structure of the antenna. The semiconductor device includes the element formation layer provided over a substrate and the antenna provided over the element formation layer. The element formation layer and the antenna are electrically connected. The antenna has a base film and a conductive body, wherein at least a part of the conductive body is embedded in the base film. As a method for embedding the conductive body in the base film, a depression is formed in the base film and the conductive body is formed therein.

摘要翻译： 本发明提供了一种天线，其特征在于，形成在基膜上的导电体的粘合强度增加，并且包括该天线的半导体器件。 本发明还提供一种通过附着元件形成层和天线形成的具有高可靠性的半导体器件，其中元件形成层由于天线的结构而不被损坏。 半导体器件包括设置在衬底上的元件形成层和设置在元件形成层上的天线。 元件形成层和天线电连接。 天线具有基膜和导电体，其中导电体的至少一部分嵌入基膜中。 作为将导电体嵌入基膜中的方法，在基膜中形成凹部，在其中形成导电体。

公开(公告)号：US08101990B2

公开(公告)日：2012-01-24

申请号：US11913578

申请日：2006-05-25

申请人： Takuya Tsurume ,  Nozomi Horikoshi

发明人： Takuya Tsurume ,  Nozomi Horikoshi

IPC分类号： H01L29/792

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L29/78603 ,  H01L29/78645

摘要： A semiconductor device is provided, which includes a first insulating layer over a first substrate, a transistor over the first insulating layer, a second insulating layer over the transistor, a first conductive layer connected to a source region or a drain region of the transistor through an opening provided in the second insulating layer, a third insulating layer over the first conductive layer, and a second substrate over the third insulating layer. The transistor comprises a semiconductor layer, a second conductive layer, and a fourth insulating layer provided between the semiconductor layer and the second conductive layer. One or plural layers selected from the first insulating layer, the second insulating layer, the third insulating layer, and the fourth insulating layer have a step portion which is provided so as not to overlap with the transistor.

摘要翻译： 提供了一种半导体器件，其包括在第一衬底上的第一绝缘层，在第一绝缘层上的晶体管，晶体管上的第二绝缘层，连接到晶体管的源极区或漏极区的第一导电层， 设置在第二绝缘层中的开口，在第一导电层上方的第三绝缘层，以及位于第三绝缘层上的第二基板。 晶体管包括半导体层，第二导电层和设置在半导体层和第二导电层之间的第四绝缘层。 从第一绝缘层，第二绝缘层，第三绝缘层和第四绝缘层选择的一个或多个层具有设置成不与晶体管重叠的台阶部分。

公开(公告)号：US07968427B2

公开(公告)日：2011-06-28

申请号：US12073617

申请日：2008-03-07

申请人： Eiji Sugiyama ,  Yoshitaka Dozen ,  Hisashi Ohtani ,  Takuya Tsurume

发明人： Eiji Sugiyama ,  Yoshitaka Dozen ,  Hisashi Ohtani ,  Takuya Tsurume

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L27/1266 ,  H01L23/145 ,  H01L23/49855 ,  H01L27/105 ,  H01L27/115 ,  H01L27/1248 ,  H01L27/13 ,  H01L29/78603 ,  H01L2223/6677 ,  H01L2224/16225 ,  H01L2924/07811 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01Q1/2225 ,  H01Q1/2283 ,  H01L2924/00

摘要： The present invention provides a semiconductor device which is not easily damaged by external local pressure. The present invention further provides a method for manufacturing a highly-reliable semiconductor device, which is not destructed by external local pressure, with a high yield. A structure body, in which high-strength fiber of an organic compound or an inorganic compound is impregnated with an organic resin, is provided over an element layer having a semiconductor element formed using a non-single crystal semiconductor layer, and heating and pressure bonding are performed, whereby a semiconductor device is manufactured, to which the element layer and the structure body in which the high-strength fiber of an organic compound or an inorganic compound is impregnated with the organic resin are firmly fixed together.

摘要翻译： 本发明提供一种不容易被外部局部压力损坏的半导体器件。 本发明还提供一种以高产率制造不被外部局部压力破坏的高可靠性半导体器件的方法。 在具有使用非单晶半导体层形成的半导体元件的元件层上设置有机化合物或无机化合物的高强度纤维被有机树脂浸渍的结构体，加热和压接 由此制造半导体器件，将有机化合物或无机化合物的高强度纤维与有机树脂浸渍的元件层和结构体牢固地固定在一起。

公开(公告)号：US07875530B2

公开(公告)日：2011-01-25

申请号：US11602261

申请日：2006-11-21

申请人： Tomoko Tamura ,  Tomoyuki Aoki ,  Takuya Tsurume ,  Koji Dairiki

发明人： Tomoko Tamura ,  Tomoyuki Aoki ,  Takuya Tsurume ,  Koji Dairiki

IPC分类号： H01L21/00 ,  H01L21/46 ,  H01L21/30

CPC分类号： H01L27/1266 ,  H01L27/1214

摘要： First semiconductor integrated circuits and second semiconductor integrated circuits arranged over a first substrate so that each of the second semiconductor integrated circuits is adjacent to one of the first semiconductor integrated circuits are transferred to additional substrates through multiple transfer operations. After the first semiconductor integrated circuits and the second semiconductor integrated circuits formed over the first substrate are transferred to the additional substrates (a fourth substrate and a fifth substrate) respectively, the circuits are divided into a semiconductor device corresponding to each semiconductor integrated circuit. The first semiconductor integrated circuits are arranged while keeping a distance from each other over the fourth substrate, and the second semiconductor integrated circuits are arranged while keeping a distance from each other over the fifth substrate. Thus, a large division margin of each of the fourth substrate and the fifth substrate can be obtained.

摘要翻译： 第一半导体集成电路和第二半导体集成电路布置在第一基板上，使得第二半导体集成电路中的每一个与第一半导体集成电路之一相邻，通过多次传送操作被传送到附加的基板。 在第一半导体集成电路和形成在第一衬底上的第二半导体集成电路分别转移到附加衬底（第四衬底和第五衬底）之后，将电路分成对应于每个半导体集成电路的半导体器件。 第一半导体集成电路在第四衬底上彼此保持距离的同时被布置，并且第二半导体集成电路被布置成在第五衬底上彼此保持距离。 因此，可以获得第四基板和第五基板中的每一个的大分割裕度。

公开(公告)号：US07808098B2

公开(公告)日：2010-10-05

申请号：US12073613

申请日：2008-03-07

申请人： Eiji Sugiyama ,  Yoshitaka Dozen ,  Hisashi Ohtani ,  Takuya Tsurume

发明人： Eiji Sugiyama ,  Yoshitaka Dozen ,  Hisashi Ohtani ,  Takuya Tsurume

IPC分类号： H01L23/14 ,  H01Q1/40

CPC分类号： H01L27/1266 ,  H01L23/145 ,  H01L23/49855 ,  H01L27/105 ,  H01L27/115 ,  H01L27/1248 ,  H01L27/13 ,  H01L29/78603 ,  H01L2223/6677 ,  H01L2224/16225 ,  H01L2924/07811 ,  H01L2924/12032 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01Q1/2225 ,  H01Q1/2283 ,  H01L2924/00

摘要： The present invention provides a semiconductor device which is not easily damaged by external local pressure. The present invention further provides a manufacturing method of a highly-reliable semiconductor device, which is not destroyed by external local pressure, with a high yield. A structure body, in which high-strength fiber of an organic compound or an inorganic compound is impregnated with an organic resin, is provided over an element substrate having a semiconductor element formed using a single crystal semiconductor region, and heating and pressure bonding are performed, whereby a semiconductor device is manufactured, to which the element substrate and the structure body in which the high-strength fiber of an organic compound or an inorganic compound is impregnated with the organic resin are fixed together.

摘要翻译： 本发明提供一种不容易被外部局部压力损坏的半导体器件。 本发明还提供了一种高可靠性的半导体器件的制造方法，其不被外部局部压力破坏，而且产率高。 在具有使用单晶半导体区域形成的半导体元件的元件基板上设置有有机化合物或无机化合物的高强度纤维被有机树脂浸渍的结构体，进行加热和压接 由此制造半导体器件，元件基板和有机化合物的高强度纤维或无机化合物浸渍有机树脂的结构体固定在一起。

公开(公告)号：US20100248403A1

公开(公告)日：2010-09-30

申请号：US12729487

申请日：2010-03-23

申请人： Kaoru Hatano ,  Takaaki Nagata ,  Takuya Tsurume

发明人： Kaoru Hatano ,  Takaaki Nagata ,  Takuya Tsurume

IPC分类号： H01L51/56

CPC分类号： H01L51/56 ,  H01L27/3211 ,  H01L27/3246 ,  H01L2227/323 ,  H01L2227/326

摘要： In a manufacturing method of a light-emitting device, a separation layer is formed over a substrate; a semiconductor circuit element layer and first electrodes are formed over the separation layer; a partition wall overlapping with end portions of the first electrodes is formed; and organic material layers are formed over the first electrodes. Organic material layers emitting light of the same color are arranged adjacent to each other in a line and extend in a first direction. A second electrode is formed using a material having high adhesiveness to the partition wall over the organic material layers to be in contact with the partition wall. A stack structure including the semiconductor circuit element layer, the first electrodes, the partition wall, the organic material layers, and the second electrode is separated from the substrate using the separation layer in a second direction perpendicular to the first direction.

摘要翻译： 在发光装置的制造方法中，在基板上形成分离层， 半导体电路元件层和第一电极形成在分离层上; 形成与第一电极的端部重叠的分隔壁; 并且在第一电极上形成有机材料层。 发射相同颜色的光的有机材料层以一条线彼此相邻布置并沿第一方向延伸。 第二电极使用与有机材料层上的隔壁具有高粘合性的材料形成，以与分隔壁接触。 在垂直于第一方向的第二方向上，使用分离层将包括半导体电路元件层，第一电极，分隔壁，有机材料层和第二电极的堆叠结构与基板分离。

公开(公告)号：US07713836B2

公开(公告)日：2010-05-11

申请号：US11902799

申请日：2007-09-25

申请人： Tomoyuki Aoki ,  Takuya Tsurume ,  Daiki Yamada

发明人： Tomoyuki Aoki ,  Takuya Tsurume ,  Daiki Yamada

IPC分类号： H01L21/30

CPC分类号： H05K3/207 ,  H01L24/97 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01058 ,  H01L2924/0106 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/07811 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H05K1/0393 ,  H05K3/386 ,  H05K2201/0239 ,  H05K2203/016 ,  H05K2203/0531 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05099

摘要： A separation layer is formed over a substrate having a depressed portion, using a silane coupling agent; a conductive layer and an insulating layer that covers the conductive layer are formed in the depressed portion over the separation layer; and a sticky member is attached to the insulating layer, then the conductive layer and the insulating layer are separated from the substrate. Alternatively, after these steps, a flexible substrate is attached to the conductive layer and the insulating layer.

摘要翻译： 使用硅烷偶联剂在具有凹陷部的基板上形成分离层; 覆盖导电层的导电层和绝缘层形成在分离层上的凹陷部分中; 并且将粘性构件附接到绝缘层，然后将导电层和绝缘层与基板分离。 或者，在这些步骤之后，将柔性基板附着到导电层和绝缘层。

公开(公告)号：US07504317B2

公开(公告)日：2009-03-17

申请号：US11600070

申请日：2006-11-16

申请人： Tomoyuki Aoki ,  Tomoko Tamura ,  Takuya Tsurume ,  Koji Dairiki

发明人： Tomoyuki Aoki ,  Tomoko Tamura ,  Takuya Tsurume ,  Koji Dairiki

IPC分类号： H01L21/46

CPC分类号： H01L27/1266 ,  H01L21/78 ,  H01L27/1214

摘要： It is an object to provide a manufacturing method of a semiconductor device with high reliability. A plurality of first semiconductor integrated circuits, a plurality of second semiconductor integrated circuits each of which is arranged to be adjacent to one of the first semiconductor integrated circuits, a plurality of third semiconductor integrated circuits each of which is arranged to be adjacent to one of the first semiconductor integrated circuits and one of the second semiconductor integrated circuits, and a plurality of fourth semiconductor integrated circuits each of which is arranged to be adjacent to one of the first semiconductor integrated circuits, one of the second semiconductor integrated circuits, and one of the third semiconductor integrated circuits are formed over a first substrate. The first semiconductor integrated circuits are transferred to a second substrate. A first protective layer is formed to cover the first semiconductor integrated circuits and a surface of the second substrate in the periphery of the first semiconductor integrated circuits. The second substrate and the first protective layer are divided so that the plurality of the first semiconductor integrated circuits is divided into individual pieces and part of the second substrate remains in the periphery of the first semiconductor integrated circuits. Accordingly, a semiconductor device having the first semiconductor integrated circuit is manufactured.

摘要翻译： 本发明的目的是提供一种高可靠性的半导体器件的制造方法。 多个第一半导体集成电路，多个第二半导体集成电路，每个第二半导体集成电路被布置为与第一半导体集成电路之一相邻，多个第三半导体集成电路被布置为与 第一半导体集成电路和第二半导体集成电路之一，以及多个第四半导体集成电路，每个第四半导体集成电路被布置为与第一半导体集成电路之一相邻，第二半导体集成电路之一和第二半导体集成电路之一 第三半导体集成电路形成在第一基板上。 第一半导体集成电路被转移到第二衬底。 形成第一保护层以覆盖第一半导体集成电路和第一半导体集成电路的周边中的第二基板的表面。 第二基板和第一保护层被分割成使得多个第一半导体集成电路被分成单独的部分，并且第二基板的一部分保留在第一半导体集成电路的周围。 因此，制造具有第一半导体集成电路的半导体器件。

公开(公告)号：US20080277660A1

公开(公告)日：2008-11-13

申请号：US11885958

申请日：2006-03-17

申请人： Takuya Tsurume ,  Etsuko Asano

发明人： Takuya Tsurume ,  Etsuko Asano

IPC分类号： H01L23/58 ,  G01R31/26 ,  H01L21/00

CPC分类号： G01R31/2601 ,  G01R31/2607 ,  G01R31/2822 ,  G01R31/2884 ,  H01L21/6835 ,  H01L21/78 ,  H01L22/14 ,  H01L22/34 ,  H01L23/66 ,  H01L2221/68359 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/00

摘要： To provide a semiconductor device capable of being easily subjected to a physical test without deteriorating characteristics. According to a measuring method of a semiconductor device in which an element layer provided with a test element including a terminal portion is sealed with first and second films having flexibility, the first film formed over the terminal portion is removed to form a contact hole reaching the terminal portion; the contact hole is filled with a resin containing a conductive material; heating is carried out after arranging a wiring substrate having flexibility over the resin with which filling has been performed so that the terminal portion and the wiring substrate having flexibility are electrically connected via the resin containing a conductive material; and a measurement is performed.

摘要翻译： 提供能够容易进行物理测试而不劣化特性的半导体器件。 根据半导体器件的测量方法，其中设置有包括端子部分的测试元件的元件层被具有柔性的第一和第二膜密封，去除在端子部分上形成的第一膜以形成到达 端子部分 接触孔填充含有导电材料的树脂; 在将具有柔性的布线基板布置在已经进行了填充的树脂上之后进行加热，使得具有柔性的端子部分和布线基板通过包含导电材料的树脂电连接; 并进行测量。

公开(公告)号：US20080009106A1

公开(公告)日：2008-01-10

申请号：US11822609

申请日：2007-07-09

申请人： Yuugo Goto ,  Yumiko Fukumoto ,  Toru Takayama ,  Junya Maruyama ,  Takuya Tsurume

发明人： Yuugo Goto ,  Yumiko Fukumoto ,  Toru Takayama ,  Junya Maruyama ,  Takuya Tsurume

IPC分类号： H01L21/46 ,  H01L21/84

CPC分类号： H01L27/1266 ,  G02F2001/13613 ,  H01L27/3246 ,  H01L51/524 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/323 ,  H01L2227/326 ,  Y10S438/976 ,  Y10S438/977

摘要： It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing substrate, a part of a glass substrate is removed by scribing or performing laser irradiation on the glass substrate which leads to providing a trigger. Then, peeling is performed with a preferable yield by performing peeling from the removed part. In addition, a crack is prevented by covering the entire face except for a connection portion of a terminal electrode (including a periphery region of the terminal electrode) with a resin.

摘要翻译： 本发明的目的是提供一种不会损伤剥离层的剥离方法，并且不仅剥离具有小尺寸区域的剥离层，而且还可以剥离具有大尺寸区域的整个剥离层 产量。 在本发明中，在粘贴固定基板之后，通过在导致提供触发的玻璃基板上划线或进行激光照射来去除玻璃基板的一部分。 然后，通过从去除部分剥离而以优选的收率进行剥离。 此外，通过用树脂覆盖端子电极（包括端子电极的周边区域）的连接部分以外的整个面来防止裂纹。