摘要:
There is provided a liquid level detecting apparatus capable of achieving miniaturization, which includes a float arm 2 provided with a float floating on a liquid surface, an arm holder 4 for holding the float arm 2 and provided with shaft portions 24 as rotation supporting points of the float arm 2, a main body frame 3 provided with two bearing portions 30 and 31 for axially supporting the shaft portions 24 of the arm holder 4, a circuit board 7 fixed to the main body frame 3, and a contact holding member 5 provided with a sliding contact 6 sliding on the circuit board 7 and fixed to the arm holder 4, and the arm holder 4 is positioned between the bearing portions 30 and 31 and holds the float arm 2 and the contact holding member 5.
摘要:
Disclosed is a karaoke authoring apparatus for mixing or authoring karaoke music data based on an electronic music sound source. The invention can analyze chronologically, in a sound reproduction block, the musical performance data expressed by a code such as MIDI code and has a pre-inserted event code, and will generate an interrupt in a timer circuit at a time interval based on the tempo instruction on the code. The invention can also acquire, as an individual file at the timing of the event code, an integrated value given by the timer circuit in accordance with the type of event, and combine and arrange these files in chronological order to calculate a time difference between consecutive event codes, for producing time data. The authored data allows color turning of the words of the music, page turning, presentation of the title of the music and a video image update which is performed accurately to the timing as planned, in synchronism with the musical performance.
摘要:
The present invention relates to a semiconductor device having an n-type semiconductor region forming one of the main surfaces of a semiconductor substrate, with a plurality of p-type semiconductor regions formed in the n-type semiconductor region. Two exposed n-type semiconductor regions are formed on each of the p-type semiconductor regions, with a main electrode formed on the n-type semiconductor regions and the exposed p-type semiconductor region therebetween. An insulated gate extends from one of the n-type semiconductor regions in one of the p-type semiconductor regions to a closer one of the n-type semiconductor regions in an adjacent p-type semiconductor region. The length of the insulated gate is longer than a distance between adjacent insulated gates.
摘要:
In a module using a high-speed switching element such as an IGBT for a high-speed inverter, a matching condition is established between the switching characteristic of the IGBT and the recovery characteristic of the diode to be connected thereto in an anti-parallel fashion. As a result, the oscillating voltage appearing in the inverter circuit is suppressed to prevent erroneous operation of the inverter system.
摘要:
A lateral insulated gate bipolar transistor comprises a p layer and a p.sup.+ layer provided apart from each other and extending from a surface of an n.sup.- layer into the n.sup.- layer, an n.sup.+ layer provided extending from a surface of the p layer into the p layer, a first main electrode provided in ohmic contact with the n.sup.+ layer and the p layer, a second main electrode provided in ohmic contact with the p.sup.+ layer, and a control electrode provided through an insulating film on the n.sup.+ layer, the p layer and the n.sup.- layer on the side of the first main electrode away from the second main electrode.
摘要:
Disclosed is a composite semiconductor device which comprises: a second and a third semiconductor regions of a second conductivity type formed in a first semiconductor region of a first conductivity type independently of each other and so as to be exposed on one main surface of a semiconductor substrate; a fourth and a fifth semiconductor regions of the first conductivity type formed in the second semiconductor region independently of each other and so as to be exposed on the one main surface of the semiconductor substrate; a first insulated gate electrode formed on the second semiconductor region located between the fifth and first semiconductor regions and exposed on the one main surface; a second insulated gate electrode formed on the first semiconductor region located between the second and third semiconductor regions and exposed on the one main surface; an electrode which shorts the fourth and third semiconductor regions; another electrode which shorts the second and fifth semiconductor regions; and a further electrode provided in the first semiconductor region.
摘要:
The whole body of a semiconductor device with its pn junction exposed ends covered by insulating glass is subjected to the exposure to radiation having an energy of higher than 0.5 MeV in terms of the reduced energy of electron beams while the semiconductor device is maintained at temperatures higher than 300.degree. C., and preferably higher than 350.degree. C. As a result, the life time of the minority carriers in the semiconductor device can be shortened without increasing the leakage current in the reverse direction.
摘要:
A thyristor with a gate electrode formed on the side of an anode electrode. An auxiliary region of a large lateral resistance is formed in a surface layer of the substrate between the anode and gate electrodes.