公开(公告)号：US08759126B2

公开(公告)日：2014-06-24

申请号：US13092226

申请日：2011-04-22

申请人： Takahide Kuranaga ,  Takashi Hattori ,  Naoya Okada ,  Mutsuko Hatano

发明人： Takahide Kuranaga ,  Takashi Hattori ,  Naoya Okada ,  Mutsuko Hatano

IPC分类号： H01L21/00 ,  G02F1/1333

CPC分类号： H01L51/5253 ,  G02F1/133351 ,  H01L51/5256 ,  H01L2251/566

摘要： An image display device comprises: a first substrate having flexure property; a first resin layer which is attached to the first substrate and over which thin film transistors are located; a barrier layer which comprises an inorganic film covering a surface of the resin layer; and a first thin film layer and a second thin film layer which are located so as to sandwich the first resin layer with the barrier layer disposed therebetween.

摘要翻译： 图像显示装置包括：具有弯曲特性的第一基板; 第一树脂层，其附接到第一基板并且薄膜晶体管位于该第一树脂层上; 阻挡层，其包含覆盖所述树脂层的表面的无机膜; 以及第一薄膜层和第二薄膜层，所述第一薄膜层和第二薄膜层被定位成夹在其间设置有阻挡层的第一树脂层。

公开(公告)号：US08482003B2

公开(公告)日：2013-07-09

申请号：US11874955

申请日：2007-10-19

申请人： Mieko Matsumura ,  Yoshiaki Toyota ,  Takeshi Sato ,  Mutsuko Hatano

发明人： Mieko Matsumura ,  Yoshiaki Toyota ,  Takeshi Sato ,  Mutsuko Hatano

IPC分类号： H01L31/00

CPC分类号： H01L29/4908 ,  G09G3/3233 ,  G09G2300/0842 ,  G09G2300/0861 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/41733 ,  H01L51/56

摘要： An image display unit is provided for which it is possible to reduce the number of ion plantation and photolithographic processes required to manufacture the device. A gate electrode GT is a laminated structure of a thin bottom layer metal film GMB and a top layer metal film GMT. A top electrode of a storage capacitor Cst is formed of the bottom layer metal film GMB and ion implantation for the top electrode is performed at the same time as the ion implantation of source-drain electrodes. The gate electrode of a PMOSTFT of the device is also formed with the bottom layer metal GMB, and the ion implantation for threshold adjustment is performed by using the same resist.

摘要翻译： 提供了一种图像显示单元，可以减少制造装置所需的离子种植和光刻工艺的数量。 栅电极GT是薄底层金属膜GMB和顶层金属膜GMT的层叠结构。 存储电容器Cst的顶部电极由底层金属膜GMB形成，并且与源极 - 漏极电极的离子注入同时进行用于顶部电极的离子注入。 器件的PMOSTFT的栅极也由底层金属GMB形成，并且通过使用相同的抗蚀剂来执行用于阈值调整的离子注入。

公开(公告)号：US08377742B2

公开(公告)日：2013-02-19

申请号：US12843977

申请日：2010-07-27

申请人： Tetsufumi Kawamura ,  Hiroyuki Uchiyama ,  Hironori Wakana ,  Mutsuko Hatano

发明人： Tetsufumi Kawamura ,  Hiroyuki Uchiyama ,  Hironori Wakana ,  Mutsuko Hatano

IPC分类号： H01L21/16

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78696

摘要： In a manufacturing method for thin film transistors, the following procedure is taken: a sacrifice layer comprised of a metal oxide semiconductor is formed over a conductive layer comprised of a metal oxide semiconductor; a metal film is formed over the sacrifice layer; the metal film is processed by dry etching; and the portion of the sacrifice layer exposed by this dry etching is subjected to wet etching.

摘要翻译： 在薄膜晶体管的制造方法中，采取以下步骤：在由金属氧化物半导体构成的导电层上形成由金属氧化物半导体构成的牺牲层; 在牺牲层之上形成金属膜; 金属膜通过干蚀刻加工; 并且通过该干蚀刻暴露的牺牲层的部分进行湿蚀刻。

公开(公告)号：US08314032B2

公开(公告)日：2012-11-20

申请号：US12838451

申请日：2010-07-17

申请人： Tetsufumi Kawamura ,  Hiroyuki Uchiyama ,  Hironori Wakana ,  Mutsuko Hatano ,  Takeshi Sato

发明人： Tetsufumi Kawamura ,  Hiroyuki Uchiyama ,  Hironori Wakana ,  Mutsuko Hatano ,  Takeshi Sato

IPC分类号： H01L21/311

CPC分类号： H01L29/7869

摘要： A method for manufacturing a thin film transistor (TFT) through a process including back exposure, in which oxide semiconductor is used for a channel layer; using an electrode over a substrate as a mask, negative resist is exposed to light from the back of the substrate; the negative resist except its exposed part is removed; and an electrode is shaped by etching a conductive film using the exposed part as an etching mask.

摘要翻译： 一种通过包括反向曝光的工艺制造薄膜晶体管（TFT）的方法，其中将氧化物半导体用于沟道层; 使用基板上的电极作为掩模，负光刻胶从基板的背面暴露于光; 去除其外露部分的负光刻胶; 并且通过使用暴露部分作为蚀刻掩模蚀刻导电膜来成形电极。

公开(公告)号：US08258024B2

公开(公告)日：2012-09-04

申请号：US12606284

申请日：2009-10-27

申请人： Mieko Matsumura ,  Mutsuko Hatano ,  Yoshiaki Toyota ,  Takuo Kaitoh

发明人： Mieko Matsumura ,  Mutsuko Hatano ,  Yoshiaki Toyota ,  Takuo Kaitoh

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L27/3262 ,  H01L29/04 ,  H01L29/78696

摘要： The display device having a thin film transistor formed on a substrate including a display portion is provided. The thin film transistor including: a gate electrode; a gate insulating film formed so as to cover the gate electrode; a semiconductor laminated film formed on top the gate insulating film so as to extend over the gate electrode, the semiconductor laminated film being formed by laminating at least a polycrystalline semiconductor film and an amorphous semiconductor film, a first electrode and a second electrode disposed on top of the semiconductor laminated film so as to be opposed to each other across a region superposing the gate electrode. In the display device, the semiconductor laminated film is formed immediately below a wiring extending from the first electrode and immediately below a wiring extending from the second electrode.

摘要翻译： 提供具有形成在包括显示部分的基板上的薄膜晶体管的显示装置。 该薄膜晶体管包括：栅电极; 形成为覆盖所述栅电极的栅极绝缘膜; 半导体层叠膜，形成在所述栅极绝缘膜的顶部上，以在所述栅极上延伸，所述半导体层叠膜通过层叠至少多晶半导体膜和非晶半导体膜，第一电极和设置在顶部的第二电极而形成 的半导体层叠膜，以跨越叠加栅电极的区域彼此相对。 在显示装置中，半导体层叠膜形成在从第一电极延伸的布线的正下方并且紧接在从第二电极延伸的布线的下方。

公开(公告)号：US20110294244A1

公开(公告)日：2011-12-01

申请号：US13114074

申请日：2011-05-24

申请人： Takashi HATTORI ,  Takahide Kuranaga ,  Naoya Okada ,  Mutsuko Hatano

发明人： Takashi HATTORI ,  Takahide Kuranaga ,  Naoya Okada ,  Mutsuko Hatano

IPC分类号： H01L33/08

CPC分类号： H01L27/1218 ,  H01L27/1262 ,  H01L2227/326

摘要： Provided is a method of manufacturing a display device, including: forming a polymer layer which includes an organic material on a principal surface side of a support substrate; forming one of a semiconductor circuit and a display circuit on the polymer layer; irradiating the polymer layer from the support substrate side with light having a wavelength that is absorbed in the polymer layer, to thereby separate the polymer layer from the support substrate; one of thinning and removing the polymer layer; and adhering a first substrate to one of a surface of the polymer layer and a face where the polymer layer has been provided.

摘要翻译： 提供一种制造显示装置的方法，包括：在支撑基板的主表面侧上形成包含有机材料的聚合物层; 在聚合物层上形成半导体电路和显示电路之一; 用具有在聚合物层中吸收的波长的光从支撑衬底侧照射聚合物层，从而将聚合物层与支撑衬底分离; 一个减薄和去除聚合物层; 并将第一基板粘合到聚合物层的表面和设置有聚合物层的面之一。

公开(公告)号：US07969520B2

公开(公告)日：2011-06-28

申请号：US12500639

申请日：2009-07-10

申请人： Daisuke Ryuzaki ,  Kazuyoshi Torii ,  Mutsuko Hatano ,  Daisuke Sonoda ,  Toshiki Kaneko

发明人： Daisuke Ryuzaki ,  Kazuyoshi Torii ,  Mutsuko Hatano ,  Daisuke Sonoda ,  Toshiki Kaneko

IPC分类号： G02F1/136

CPC分类号： G02F1/1362 ,  G02F1/133345 ,  G02F2202/02 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/3185 ,  Y10T428/10

摘要： The present invention provides a liquid crystal display device with high image visibility at low power consumption and produced at low cost by using an interlayer dielectric film, which has low dielectric constant, high heat-resistant property, high optical transmissivity, high film thickness and high flattening property produced at low cost. An organic siloxane dielectric film is used as an interlayer dielectric film of the liquid crystal display device. A ratio of nitrogen content to silicon content (Ni content/Si content) in the interlayer dielectric film is controlled to 0.04 or more in the element ratio. The limiting film thickness to suppress and limit the cracking caused by the thickening of the interlayer dielectric film is set to 1.5 μm or more.

摘要翻译： 本发明提供一种低功耗的高图像可见度的液晶显示装置，通过使用具有低介电常数，高耐热性，高透光率，高膜厚和高的层间绝缘膜以低成本生产的液晶显示装置 以低成本生产的扁平性。 使用有机硅氧烷介电膜作为液晶显示装置的层间电介质膜。 层间电介质膜中的氮含量与硅含量（Ni含量/ Si含量）的比例以元素比控制在0.04以上。 抑制和限制由层间绝缘膜增厚引起的开裂的限制膜厚设定为1.5μm以上。

公开(公告)号：US20090273751A1

公开(公告)日：2009-11-05

申请号：US12500639

申请日：2009-07-10

申请人： Daisuke Ryuzaki ,  Kazuyoshi Torii ,  Mutsuko Hatano ,  Daisuke Sonoda ,  Toshiki Kaneko

发明人： Daisuke Ryuzaki ,  Kazuyoshi Torii ,  Mutsuko Hatano ,  Daisuke Sonoda ,  Toshiki Kaneko

IPC分类号： G02F1/1333 ,  H01L27/12

CPC分类号： G02F1/1362 ,  G02F1/133345 ,  G02F2202/02 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/3185 ,  Y10T428/10

摘要： The present invention provides a liquid crystal display device with high image visibility at low power consumption and produced at low cost by using an interlayer dielectric film, which has low dielectric constant, high heat-resistant property, high optical transmissivity, high film thickness and high flattening property produced at low cost. An organic siloxane dielectric film is used as an interlayer dielectric film of the liquid crystal display device. A ratio of nitrogen content to silicon content (Ni content/Si content) in the interlayer dielectric film is controlled to 0.04 or more in the element ratio. The limiting film thickness to suppress and limit the cracking caused by the thickening of the interlayer dielectric film is set to 1.5 μm or more.

摘要翻译： 本发明提供一种低功耗的高图像可见度的液晶显示装置，通过使用具有低介电常数，高耐热性，高透光率，高膜厚和高的层间绝缘膜以低成本生产的液晶显示装置 以低成本生产的扁平性。 使用有机硅氧烷介电膜作为液晶显示装置的层间电介质膜。 层间电介质膜中的氮含量与硅含量（Ni含量/ Si含量）的比例以元素比控制在0.04以上。 抑制和限制由层间电介质膜的增厚引起的裂纹的限制膜厚设定为1.5μm以上。

公开(公告)号：US07569439B2

公开(公告)日：2009-08-04

申请号：US11047620

申请日：2005-02-02

申请人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba

发明人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/36

CPC分类号： H01L21/02686 ,  H01L21/02609 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/045 ,  H01L29/6675 ,  H01L29/66765 ,  H01L29/78648 ,  H01L29/78672 ,  H01L29/78678

摘要： A thin film semiconductor device has a semiconductor thin film with a film thickness of 200 nm or less. The semiconductor thin film is formed over a dielectric substrate with a warping point of 600° C. or lower. The semiconductor thin film has a region in which a first semiconductor thin film region with the defect density of 1×1017 cm−3 or less and a second semiconductor thin film region with the defect density of 1×1017 cm−3 or more are disposed alternately in the form of stripes. The width of the first semiconductor thin film region is larger than the width of the semiconductor thin film region. The grain boundaries, grain size and orientation of crystals over the dielectric substrate are controlled, so that a high quality thin film semiconductor device is obtained.

摘要翻译： 薄膜半导体器件具有膜厚度为200nm以下的半导体薄膜。 半导体薄膜形成在电介质基板上，其翘曲点为600℃以下。 半导体薄膜具有以下形式交替地配置缺陷密度为1×10 17 cm -3以下的第一半导体薄膜区域和缺陷密度为1×10 17 cm -3以上的第二半导体薄膜区域， 的条纹。 第一半导体薄膜区域的宽度大于半导体薄膜区域的宽度。 控制电介质基板上晶界的晶界，晶粒尺寸和取向，从而获得高品质的薄膜半导体器件。

公开(公告)号：US20090057676A1

公开(公告)日：2009-03-05

申请号：US12258738

申请日：2008-10-27

申请人： Shinya YAMAGUCHI ,  Mutsuko Hatano ,  Mitsuharu Tai ,  Sedng-Kee Park ,  Takeo Shiba

发明人： Shinya YAMAGUCHI ,  Mutsuko Hatano ,  Mitsuharu Tai ,  Sedng-Kee Park ,  Takeo Shiba

IPC分类号： H01L33/00

CPC分类号： H01L27/1285 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02609 ,  H01L21/02675 ,  H01L21/02691 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 100% of an intra-grain average film thickness.

摘要翻译： 提供一种薄膜半导体器件，其包括绝缘衬底，形成在绝缘衬底上的Si薄膜，以及具有Si薄膜作为其沟道的晶体管。 Si薄膜包括其中布置有多个窄的矩形晶粒的多晶体。 多晶的表面在其晶界处是平坦的。 此外，Si薄膜的晶体边界的平均膜厚度在晶粒内平均膜厚度的90〜100％的范围内。