公开(公告)号：US20080191151A1

公开(公告)日：2008-08-14

申请号：US11822386

申请日：2007-07-05

申请人： Hiroyasu Shichi ,  Tohru Ishitani ,  Hidemi Koike ,  Kaoru Umemura ,  Eiichi Seya ,  Mitsuo Tokuda ,  Satoshi Tomimatsu ,  Hideo Kashima ,  Muneyuki Fukuda

发明人： Hiroyasu Shichi ,  Tohru Ishitani ,  Hidemi Koike ,  Kaoru Umemura ,  Eiichi Seya ,  Mitsuo Tokuda ,  Satoshi Tomimatsu ,  Hideo Kashima ,  Muneyuki Fukuda

IPC分类号： G21K1/00 ,  H01J37/08

CPC分类号： G01N23/20 ,  B23K15/0006 ,  B23K15/0013 ,  G01N1/286 ,  H01J2237/3114 ,  H01J2237/31745

摘要： A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.

摘要翻译： 相对于样品表面以小于90度的入射角照射具有聚焦离子束的样品的样品制造方法，消除作为目标的微量样品的周边区域，将样品台围绕线段 垂直于样品表面作为转动轴线，同时在样品表面上的入射角被固定的同时用聚焦离子束照射样品，并分离微量样品或制备待分离的微量样品。 一种样品制造装置，用于通过扫描和偏转离子束来形成保持在样品台上的样品中的样品部分，其中离子束的光轴与样品台的表面之间的角度被固定并形成样品 通过转动样品台来控制切片。

公开(公告)号：US20080073582A1

公开(公告)日：2008-03-27

申请号：US11674262

申请日：2007-02-13

申请人： Hiroyasu Shichi ,  Satoshi Tomimatsu ,  Noriyuki Kaneoka ,  Kaoru Umemura ,  Koji Ishiguro

发明人： Hiroyasu Shichi ,  Satoshi Tomimatsu ,  Noriyuki Kaneoka ,  Kaoru Umemura ,  Koji Ishiguro

IPC分类号： H01J37/08

CPC分类号： H01J37/261 ,  H01J37/20 ,  H01J37/3045 ,  H01J2237/08 ,  H01J2237/20207 ,  H01J2237/24528 ,  H01J2237/28 ,  H01J2237/31713 ,  H01J2237/3174 ,  H01J2237/31749

摘要： The present invention provides an ion beam processing technology for improving the precision in processing a section of a sample using an ion beam without making a processing time longer than a conventionally required processing time, and for shortening the time required for separating a micro test piece without breaking the sample or the time required for making preparations for the separation. An ion beam processing apparatus is structured so that an axis along which an ion beam is drawn out of an ion source and an ion beam irradiation axis along which the ion beam is irradiated to a sample mounted on a first sample stage will meet at an angle. Furthermore, the ion beam processing apparatus has a tilting ability to vary an angle of irradiation, at which the ion beam is irradiated to the sample, by rotating a second sample stage, on which a test piece extracted from the sample by performing ion beam processing is mounted, about the tilting axis of the second sample stage. The ion beam processing apparatus is structured so that a segment drawn by projecting the axis, along which the ion beam is drawn out of the ion source, on a plane perpendicular to the ion beam irradiation axis can be at least substantially parallel to a segment drawn by projecting the tilting axis of the second sample stage on the plane perpendicular to the ion beam irradiation axis.

摘要翻译： 本发明提供了一种离子束处理技术，用于提高使用离子束处理样品的一部分的精度，而不需要比常规所需的处理时间长的处理时间，并且缩短了分离微测试件所需的时间，而没有 打破样品或准备分离所需的时间。 离子束处理装置被构造成使得离子束从离子源拉出的轴和离子束照射到安装在第一样品台上的样品的离子束照射轴将以一定角度相遇 。 此外，离子束处理装置具有通过旋转第二样品台而使离子束照射到样品上的照射角度的倾斜能力，通过进行离子束处理从样品中提取试验片 围绕第二样品台的倾斜轴安装。 离子束处理装置被构造成使得通过将离子束从离子源拉出的轴在垂直于离子束照射轴线的平面上突出的拉伸而绘制的区段可以至少基本上平行于拉伸的区段 通过将第二样品台的倾斜轴投影在垂直于离子束照射轴的平面上。

公开(公告)号：US20070181831A1

公开(公告)日：2007-08-09

申请号：US11783001

申请日：2007-04-05

申请人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

发明人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

IPC分类号： H01J37/08

CPC分类号： H04L29/06 ,  G01N23/225 ,  H01J37/256 ,  H01J37/3056 ,  H01J2237/20 ,  H01J2237/202 ,  H01J2237/31745 ,  H04L67/16 ,  H04L69/329

摘要： An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

公开(公告)号：US20050211927A1

公开(公告)日：2005-09-29

申请号：US11127240

申请日：2005-05-12

申请人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

发明人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

IPC分类号： G01N1/32 ,  G01N1/28 ,  G01N23/225 ,  G01Q10/00 ,  G01Q30/02 ,  G01Q30/04 ,  G01Q30/16 ,  G01Q30/20 ,  H01J37/20 ,  H01J37/256 ,  H01J37/28 ,  H01J37/30 ,  H01J37/305 ,  H01J37/317 ,  H01L21/66 ,  H04L29/06 ,  H04L29/08 ,  A61N5/00 ,  G21K7/00

CPC分类号： H04L29/06 ,  G01N23/225 ,  H01J37/256 ,  H01J37/3056 ,  H01J2237/20 ,  H01J2237/202 ,  H01J2237/31745 ,  H04L67/16 ,  H04L69/329

摘要： An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

公开(公告)号：US06664552B2

公开(公告)日：2003-12-16

申请号：US09985537

申请日：2001-11-05

申请人： Hiroyasu Shichi ,  Tohru Ishitani ,  Hidemi Koike ,  Kaoru Umemura ,  Eiichi Seya ,  Mitsuo Tokuda ,  Satoshi Tomimatsu ,  Hideo Kashima ,  Muneyuki Fukuda

发明人： Hiroyasu Shichi ,  Tohru Ishitani ,  Hidemi Koike ,  Kaoru Umemura ,  Eiichi Seya ,  Mitsuo Tokuda ,  Satoshi Tomimatsu ,  Hideo Kashima ,  Muneyuki Fukuda

IPC分类号： G21G500

CPC分类号： G01N23/20 ,  B23K15/0006 ,  B23K15/0013 ,  G01N1/286 ,  H01J2237/3114 ,  H01J2237/31745

摘要： A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.

摘要翻译： 相对于样品表面以小于90度的入射角照射具有聚焦离子束的样品的样品制造方法，消除作为目标的微量样品的周边区域，将样品台围绕线段 垂直于样品表面作为转动轴线，同时在样品表面上的入射角被固定的同时用聚焦离子束照射样品，并分离微量样品或制备待分离的微量样品。 一种样品制造装置，用于通过扫描和偏转离子束来形成保持在样品台上的样品中的样品部分，其中离子束的光轴与样品台的表面之间的角度被固定并形成样品 通过转动样品台来控制切片。

公开(公告)号：US08912487B2

公开(公告)日：2014-12-16

申请号：US13503074

申请日：2010-10-06

申请人： Kunio Sakamoto ,  Megumi Aizawa ,  Satoshi Tomimatsu ,  Isamu Sekihara

发明人： Kunio Sakamoto ,  Megumi Aizawa ,  Satoshi Tomimatsu ,  Isamu Sekihara

IPC分类号： H01J37/304 ,  H01J37/305 ,  G01N23/22 ,  H01J37/302

CPC分类号： H01J37/3056 ,  G01N23/2208 ,  H01J37/302 ,  H01J37/3045 ,  H01J2237/3174 ,  H01J2237/31749

摘要： Observation using an FIB image is enabled without causing any damage to a designated region. To this end, an ion beam scanning-prohibited region is set in a sample by using an image acquired by a charged particle beam other than an ion beam, or an image prepared as external data as a peripheral image including the designated region of a sample. Thereafter, the image used to set the ion beam scanning-prohibited region is exactly superimposed on an FIB image acquired for regions except the ion beam scanning-prohibited region, thereby forming an image including the ion beam scanning-prohibited region on which ion beam scanning has not been performed.

摘要翻译： 使用FIB图像进行观察，而不会对指定区域造成任何损害。 为此，通过使用由离子束以外的带电粒子束获取的图像或作为外部数据准备的图像作为包含样本的指定区域的周边图像，在样本中设定离子束扫描禁止区域 。 此后，将用于设定离子束扫描禁止区域的图像精确地叠加在除了离子束扫描禁止区域之外的区域获取的FIB图像上，从而形成包括离子束扫描禁止区域的图像，其中离子束扫描禁止区域 尚未执行

公开(公告)号：US20140076717A1

公开(公告)日：2014-03-20

申请号：US14119807

申请日：2012-05-16

申请人： Terutaka Nanri ,  Satoshi Tomimatsu

发明人： Terutaka Nanri ,  Satoshi Tomimatsu

IPC分类号： H01J37/304 ,  H01J37/305

CPC分类号： H01J37/3056 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J2237/31713 ,  H01J2237/31745

摘要： Provided is a technique to perform FIB milling, in spite of its sample dependency, effectively into a desired shape without influences of individual differences among operators. A charged particle beam device includes an ion beam optical system device configured to irradiate a sample with an ion beam generated at an ion source; a controller thereof; an element detector configured to detect elements constituting the sample; a controller thereof; and a central processor configured to automatically set conditions for the sample based on the element specified by the element detector.

摘要翻译： 提供了一种执行FIB铣削的技术，尽管其样品依赖性有效地成为期望的形状，而不影响操作者之间的个体差异。 带电粒子束装置包括：离子束光学系统装置，被配置为用在离子源处产生的离子束照射样品; 其控制器; 元件检测器，被配置为检测构成样品的元件; 其控制器; 以及中央处理器，其被配置为基于由所述元件检测器指定的元素来自动设置所述样本的条件。

公开(公告)号：US20130334034A1

公开(公告)日：2013-12-19

申请号：US14002137

申请日：2012-01-13

申请人： Shinya Kitayama ,  Satoshi Tomimatsu ,  Tsuyoshi Onishi

发明人： Shinya Kitayama ,  Satoshi Tomimatsu ,  Tsuyoshi Onishi

IPC分类号： H01J37/317

CPC分类号： H01J37/317 ,  H01J37/20 ,  H01J37/222 ,  H01J2237/30466 ,  H01J2237/31745 ,  H01J2237/31749

摘要： Provided are a device and method capable of machining a machining target such as a sample, a probe, or a sample table without requiring a high degree of device operation skill. First, a shape generation process of determining a shape of a machining target on the basis of an ion beam scanning signal and an absorption current of the machining target is performed. Next, a machining pattern positioning process of positioning a machining pattern over an image of the machining target is performed. Further, an ion beam stopping process of stopping ion beam irradiation is performed from a result of comparison between the image of the machining target and the machining pattern while the machining target is machined through the ion beam irradiation.

摘要翻译： 提供了能够加工诸如样品，探针或样品台之类的加工对象的装置和方法，而不需要高度的装置操作技能。 首先，执行基于加工对象的离子束扫描信号和吸收电流来确定加工对象的形状的形状生成处理。 接下来，执行将加工图案定位在加工对象的图像上的加工图案定位处理。 此外，从加工对象的图像与加工图案的比较的结果，通过离子束照射加工加工对象，进行停止离子束照射的离子束停止处理。

公开(公告)号：US20130105302A1

公开(公告)日：2013-05-02

申请号：US13808261

申请日：2011-07-05

申请人： Terutaka Nanri ,  Tsuyoshi Onishi ,  Satoshi Tomimatsu

发明人： Terutaka Nanri ,  Tsuyoshi Onishi ,  Satoshi Tomimatsu

IPC分类号： C23F4/02

CPC分类号： C23F4/02 ,  G01N1/32 ,  G01N23/225 ,  H01J37/08 ,  H01J37/244 ,  H01J37/3002 ,  H01J37/3056 ,  H01J2237/31745

摘要： Provided is a technique capable of removing a damaged layer of a sample piece generated through an FIB fabrication sufficiently but at the minimum. A charged particle beam device includes a first element ion beam optical system unit (110) which performs a first FIB fabrication to form a sample piece from a sample, a second element ion beam optical system unit (120) which performs a second FIB fabrication to remove a damaged layer formed on a surface of the sample piece, and a first element detector (140) which detects an first element existing in the damaged layer. A termination of the second FIB fabrication is determined if an amount of the first element existing in the damaged layer becomes smaller than a predefined threshold value.

摘要翻译： 提供了一种能够通过FIB制造而产生的样品片的损伤层除去至少最小的技术。 带电粒子束装置包括：第一元件离子束光学系统单元，其执行第一FIB制造以从样品形成样品片;第二元件离子束光学系统单元，其执行第二FIB制造， 去除形成在样品表面上的损伤层，以及检测存在于损伤层中的第一元素的第一元件检测器（140）。 如果损伤层中存在的第一元素的量变得小于预定阈值，则确定第二FIB制造的终止。

公开(公告)号：US20120211652A1

公开(公告)日：2012-08-23

申请号：US13503074

申请日：2010-10-06

申请人： Kunio Sakamoto ,  Megumi Aizawa ,  Satoshi Tomimatsu ,  Isamu Sekihara

发明人： Kunio Sakamoto ,  Megumi Aizawa ,  Satoshi Tomimatsu ,  Isamu Sekihara

IPC分类号： H01J37/26

CPC分类号： H01J37/3056 ,  G01N23/2208 ,  H01J37/302 ,  H01J37/3045 ,  H01J2237/3174 ,  H01J2237/31749

摘要： Observation using an FIB image is enabled without causing any damage to a designated region. To this end, an ion beam scanning-prohibited region is set in a sample by using an image acquired by a charged particle beam other than an ion beam, or an image prepared as external data as a peripheral image including the designated region of a sample. Thereafter, the image used to set the ion beam scanning-prohibited region is exactly superimposed on an FIB image acquired for regions except the ion beam scanning-prohibited region, thereby forming an image including the ion beam scanning-prohibited region on which ion beam scanning has not been performed.

摘要翻译： 使用FIB图像进行观察，而不会对指定区域造成任何损害。 为此，通过使用由离子束以外的带电粒子束获取的图像或作为外部数据准备的图像作为包含样本的指定区域的周边图像，在样本中设定离子束扫描禁止区域 。 此后，将用于设定离子束扫描禁止区域的图像精确地叠加在除了离子束扫描禁止区域之外的区域获取的FIB图像上，从而形成包括离子束扫描禁止区域的图像，其中离子束扫描禁止区域 尚未执行