公开(公告)号：US4927472A

公开(公告)日：1990-05-22

申请号：US256935

申请日：1988-10-13

申请人： Yasunobu Matsushima ,  Shigeo Tanaka ,  Tomoyuki Aoki ,  Yohji Ono

发明人： Yasunobu Matsushima ,  Shigeo Tanaka ,  Tomoyuki Aoki ,  Yohji Ono

IPC分类号： C23C22/10 ,  C23C22/23 ,  C25D11/36

CPC分类号： C23C22/10 ,  C23C22/23 ,  C25D11/36

摘要： A conversion coating, predominantly consisting of tin phosphate, can be deposited on steel or tin plated steel surfaces by contact with a solution containing phosphate ions, tin ions, an oxidizing agent such as chlorate, and a chelating agent for the tin ions, the latter to prevent the rapid loss of tin from the solution that otherwise would occur. A coating that confers excellent resistance to corrosion in hot water is formed on drawn and ironed thinly tin plated cans.

摘要翻译： 主要由磷酸铁组成的转化涂层可以通过与含有磷酸根离子，锡离子，氧化剂如氯酸盐和锡离子的螯合剂的溶液接触而沉积在钢或镀锡钢表面上，后者 以防止锡从溶液中快速损失，否则会发生。 在拉制和熨烫的薄镀锡罐上形成一种赋予热水腐蚀性能优异的涂层。

公开(公告)号：US09284410B2

公开(公告)日：2016-03-15

申请号：US14406607

申请日：2012-06-19

申请人： Taku Ishimaru ,  Katsumi Akaike ,  Daisuke Kikuno ,  Tomoyuki Aoki ,  Minoru Noda ,  Yasunori Tsuda

发明人： Taku Ishimaru ,  Katsumi Akaike ,  Daisuke Kikuno ,  Tomoyuki Aoki ,  Minoru Noda ,  Yasunori Tsuda

IPC分类号： C08G69/26 ,  C08L77/06 ,  C08G69/36 ,  C08G69/28 ,  B29C47/10 ,  B29C47/36 ,  D01F6/90 ,  C08L77/00

CPC分类号： C08G69/26 ,  B29C47/1063 ,  B29C47/364 ,  C08G69/265 ,  C08G69/28 ,  C08G69/36 ,  C08L77/00 ,  C08L77/06 ,  D01F6/90

摘要： A method of producing a polyamide includes (i) polycondensating a polyamide precursor containing a salt made from a dicarboxylic acid and a diamine under pressure in a pre-polymerization tank to obtain a prepolymer, and (ii) highly polymerizing the prepolymer with an extruder, wherein when the prepolymer in a molten state which is obtained in the step (i) is fed, by a pump, to the low-pressure extruder from the pre-polymerization tank through a discharge side pipe disposed downstream of the pump, the prepolymer is fed such that the length L [cm] of the discharge side pipe and the linear velocity of discharge v [cm/s] of the prepolymer by the pump satisfy the relationship expressed by the equation, 0.1 [s]≦L/v

摘要翻译： 制备聚酰胺的方法包括：（i）在预聚合槽中将压缩下由二羧酸和二胺制成的盐的聚酰胺前体缩聚得到预聚物，和（ii）用挤出机使聚合物高度聚合， 其中当步骤（i）中获得的处于熔融状态的预聚物通过泵从预聚合槽通过布置在泵下游的排放侧管被泵送到低压挤出机中时，预聚物是 进料使得排出侧管的长度L [cm]和泵的预定液体的线速度v [cm / s]满足由式表示的关系：0.1 [s]＆nlE; L / v < 10 [s]。

公开(公告)号：US09155204B2

公开(公告)日：2015-10-06

申请号：US12690992

申请日：2010-01-21

申请人： Junya Maruyama ,  Tomoyuki Aoki

发明人： Junya Maruyama ,  Tomoyuki Aoki

IPC分类号： H05K3/30 ,  H05K3/20 ,  H05K3/24

CPC分类号： H05K3/205 ,  H01L2224/11 ,  H01L2924/12044 ,  H05K3/245 ,  H05K2203/0117 ,  Y10T29/49016 ,  Y10T29/49018 ,  Y10T29/49117 ,  Y10T29/49144 ,  Y10T29/49155 ,  Y10T29/49224 ,  H01L2924/00

摘要： A manufacturing method of a wiring board and a semiconductor device at low cost and by a simple process, without performing complicated steps many times is proposed. Furthermore, a manufacturing method of a wiring board at low cost and with fewer adverse effects on the environment, and a manufacturing method of a semiconductor device using the wiring board are proposed. A pattern of a conductive material is formed over a first substrate, a conductive film is formed over the pattern by an electrolytic plating process, the pattern and the conductive film are separated, an IC chip including at least one thin film transistor is formed over a second substrate, and the conductive film is electrically connected to the IC chip.

摘要翻译： 提出了一种以低成本和简单的方法制造布线板和半导体器件的方法，而不需要多次复杂的步骤。 此外，提出了一种低成本并且对环境的不利影响较少的布线板的制造方法以及使用该布线板的半导体装置的制造方法。 导电材料的图形形成在第一基板上，通过电解电镀工艺在图案上形成导电膜，图案和导电膜被分离，包括至少一个薄膜晶体管的IC芯片形成在 第二基板，并且导电膜电连接到IC芯片。

公开(公告)号：US08044499B2

公开(公告)日：2011-10-25

申请号：US12465703

申请日：2009-05-14

申请人： Akihiro Chida ,  Tomoyuki Aoki

发明人： Akihiro Chida ,  Tomoyuki Aoki

IPC分类号： H01L23/48 ,  H01L21/00

CPC分类号： H05K3/4647 ,  H01L21/6835 ,  H01L23/3733 ,  H01L27/124 ,  H01L27/1266 ,  H01L29/78603 ,  H01L2221/6835 ,  H01L2224/29499 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/3025 ,  H05K1/0366 ,  H05K3/4069 ,  H05K2201/029 ,  H05K2203/1147 ,  Y10T442/2418 ,  H01L2924/00

摘要： A wiring substrate is provided, including an insulating resin layer which is provided on both surfaces of a sheet-like fibrous body and with which the sheet-like fibrous body is impregnated, and a through wiring provided in a region surrounded by the insulating resin layer. The through wiring is formed using a conductive material, the conductive material is exposed on both surfaces of the insulating resin layer, the sheet-like fibrous body is positioned in the conductive material, and the sheet-like fibrous body is impregnated with the conductive material. A manufacturing method of the wiring substrate is also provided.

摘要翻译： 提供了一种布线基板，包括设置在片状纤维体的两个表面上且被片状纤维体浸渍的绝缘树脂层，以及设置在由绝缘树脂层围绕的区域中的通孔 。 贯通布线使用导电材料形成，导电材料暴露在绝缘树脂层的两个表面上，片状纤维体位于导电材料中，并且片状纤维体浸渍有导电材料 。 还提供了布线基板的制造方法。

公开(公告)号：US07875530B2

公开(公告)日：2011-01-25

申请号：US11602261

申请日：2006-11-21

申请人： Tomoko Tamura ,  Tomoyuki Aoki ,  Takuya Tsurume ,  Koji Dairiki

发明人： Tomoko Tamura ,  Tomoyuki Aoki ,  Takuya Tsurume ,  Koji Dairiki

IPC分类号： H01L21/00 ,  H01L21/46 ,  H01L21/30

CPC分类号： H01L27/1266 ,  H01L27/1214

摘要： First semiconductor integrated circuits and second semiconductor integrated circuits arranged over a first substrate so that each of the second semiconductor integrated circuits is adjacent to one of the first semiconductor integrated circuits are transferred to additional substrates through multiple transfer operations. After the first semiconductor integrated circuits and the second semiconductor integrated circuits formed over the first substrate are transferred to the additional substrates (a fourth substrate and a fifth substrate) respectively, the circuits are divided into a semiconductor device corresponding to each semiconductor integrated circuit. The first semiconductor integrated circuits are arranged while keeping a distance from each other over the fourth substrate, and the second semiconductor integrated circuits are arranged while keeping a distance from each other over the fifth substrate. Thus, a large division margin of each of the fourth substrate and the fifth substrate can be obtained.

摘要翻译： 第一半导体集成电路和第二半导体集成电路布置在第一基板上，使得第二半导体集成电路中的每一个与第一半导体集成电路之一相邻，通过多次传送操作被传送到附加的基板。 在第一半导体集成电路和形成在第一衬底上的第二半导体集成电路分别转移到附加衬底（第四衬底和第五衬底）之后，将电路分成对应于每个半导体集成电路的半导体器件。 第一半导体集成电路在第四衬底上彼此保持距离的同时被布置，并且第二半导体集成电路被布置成在第五衬底上彼此保持距离。 因此，可以获得第四基板和第五基板中的每一个的大分割裕度。

公开(公告)号：US20100120205A1

公开(公告)日：2010-05-13

申请号：US12690992

申请日：2010-01-21

申请人： Junya Maruyama ,  Tomoyuki Aoki

发明人： Junya Maruyama ,  Tomoyuki Aoki

IPC分类号： H01L21/50 ,  C25D1/00 ,  C25D5/48

CPC分类号： H05K3/205 ,  H01L2224/11 ,  H01L2924/12044 ,  H05K3/245 ,  H05K2203/0117 ,  Y10T29/49016 ,  Y10T29/49018 ,  Y10T29/49117 ,  Y10T29/49144 ,  Y10T29/49155 ,  Y10T29/49224 ,  H01L2924/00

摘要： A manufacturing method of a wiring board and a semiconductor device at low cost and by a simple process, without performing complicated steps many times is proposed. Furthermore, a manufacturing method of a wiring board at low cost and with fewer adverse effects on the environment, and a manufacturing method of a semiconductor device using the wiring board are proposed. A pattern of a conductive material is formed over a first substrate, a conductive film is formed over the pattern by an electrolytic plating process, the pattern and the conductive film are separated, an IC chip including at least one thin film transistor is formed over a second substrate, and the conductive film is electrically connected to the IC chip.

摘要翻译： 提出了一种以低成本和简单的方法制造布线板和半导体器件的方法，而不需要多次复杂的步骤。 此外，提出了一种低成本并且对环境的不利影响较少的布线板的制造方法以及使用该布线板的半导体装置的制造方法。 导电材料的图形形成在第一基板上，通过电解电镀工艺在图案上形成导电膜，图案和导电膜被分离，包括至少一个薄膜晶体管的IC芯片形成在 第二基板，并且导电膜电连接到IC芯片。

公开(公告)号：US07685706B2

公开(公告)日：2010-03-30

申请号：US11474934

申请日：2006-06-27

申请人： Junya Maruyama ,  Tomoyuki Aoki

发明人： Junya Maruyama ,  Tomoyuki Aoki

IPC分类号： H05K3/02 ,  H05K3/10

CPC分类号： H05K3/205 ,  H01L2224/11 ,  H01L2924/12044 ,  H05K3/245 ,  H05K2203/0117 ,  Y10T29/49016 ,  Y10T29/49018 ,  Y10T29/49117 ,  Y10T29/49144 ,  Y10T29/49155 ,  Y10T29/49224 ,  H01L2924/00

摘要： A manufacturing method of a wiring board and a semiconductor device at low cost and by a simple process, without performing complicated steps many times is proposed. Furthermore, a manufacturing method of a wiring board at low cost and with fewer adverse effects on the environment, and a manufacturing method of a semiconductor device using the wiring board are proposed. A pattern of a conductive material is formed over a first substrate, a conductive film is formed over the pattern by an electrolytic plating process, the pattern and the conductive film are separated, an IC chip including at least one thin film transistor is formed over a second substrate, and the conductive film is electrically connected to the IC chip.

摘要翻译： 提出了一种以低成本和简单的方法制造布线板和半导体器件的方法，而不需要多次复杂的步骤。 此外，提出了一种低成本并且对环境的不利影响较少的布线板的制造方法以及使用该布线板的半导体装置的制造方法。 导电材料的图形形成在第一基板上，通过电解电镀工艺在图案上形成导电膜，图案和导电膜被分离，包括至少一个薄膜晶体管的IC芯片形成在 第二基板，并且导电膜电连接到IC芯片。

公开(公告)号：US20090292381A1

公开(公告)日：2009-11-26

申请号：US11813048

申请日：2006-09-08

申请人： Shota Inoue ,  Tomoyuki Aoki ,  Yuichi Nakamura ,  Takaaki Yoshida

发明人： Shota Inoue ,  Tomoyuki Aoki ,  Yuichi Nakamura ,  Takaaki Yoshida

IPC分类号： G06F17/00 ,  G06Q10/00 ,  G06Q50/00

CPC分类号： G05B19/41865 ,  G05B2219/32258 ,  G05B2219/32263 ,  G06Q10/06 ,  G06Q10/0637 ,  G06Q10/087 ,  Y02P90/20

摘要： In the production process where an ordered article and a forecast production article are mixed, parameters for defining production priority of each article are preset while assuming a case where the demand exceeds the available production capability, and priority is given to an article which must be produced first within the range of available production capability according to the marginal stock rate of each article. The marginal stock rate is determined by (effective stock amount/necessary stock amount) for a forecast production article. As for the ordered production article, a stock sufficient for delivery is required at the time of shipment. Accordingly, stock of that quantity (demand take-in amount) can be regarded as the necessary amount of stock while the currently completed products can be regarded as the effective stock amount. Thus, the marginal stock rate (effective stock amount/demand take-in amount) can be indexed.

摘要翻译： 在订购物品和预测生产物品混合的生产过程中，假设每个物品的生产优先权的参数预先设定为需求超过可用生产能力的情况，并且优先考虑必须生产的物品 首先根据每篇文章的边际库存率在可用生产能力的范围内。 边际库存率由预测生产物品（有效库存量/必需库存量）确定。 对于订购的生产物品，在装运时需要一批足够的货物。 因此，该数量的库存（需求购入金额）可以被认为是必需的库存量，而目前完成的产品可以被视为有效库存量。 因此，边际股票价格（有效库存量/需求买入金额）可以索引。

公开(公告)号：US20090102055A1

公开(公告)日：2009-04-23

申请号：US11919635

申请日：2006-05-26

申请人： Tomoyuki Aoki ,  Koji Dairiki ,  Yuugo Goto

发明人： Tomoyuki Aoki ,  Koji Dairiki ,  Yuugo Goto

IPC分类号： H01L23/52

CPC分类号： H01L27/13 ,  G06K19/07749 ,  H01L21/6835 ,  H01L23/5227 ,  H01L23/552 ,  H01L23/576 ,  H01L23/585 ,  H01L27/105 ,  H01L27/11509 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/1203 ,  H01L27/124 ,  H01L27/1266 ,  H01L29/78618 ,  H01L2221/6835 ,  H01L2221/68368 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/30105 ,  H01Q1/2208 ,  H01L2924/00

摘要： It is an object of the invention to provide semiconductor devices which can protect privacy of consumers or holders of commercial products and control the communication range according to use, even when the semiconductor device which can exchange data without contact is mounted on the commercial products. A semiconductor device of the invention includes an element group including a plurality of transistors over a substrate; a first conductive film functioning as an antenna over the element group; a second conductive film surrounding the first conductive film; an insulating film covering the first and second end portions; and a third conductive film over the insulating film. The first conductive film is provided in the shape of a coil, and each end portion of the first conductive film is connected to the element group. First and second end portions of the second conductive film are not connected to each other.

摘要翻译： 本发明的目的是提供可以保护消费者或商业产品持有人的隐私的半导体器件，并且即使当可以将交换数据而没有接触的半导体器件安装在商业产品上时，也可以根据使用来控制通信范围。 本发明的半导体器件包括在衬底上包括多个晶体管的元件组; 用作元件组上的天线的第一导电膜; 围绕所述第一导电膜的第二导电膜; 覆盖所述第一和第二端部的绝缘膜; 和绝缘膜上的第三导电膜。 第一导电膜设置为线圈形状，并且第一导电膜的每个端部连接到元件组。 第二导电膜的第一端部和第二端部彼此不连接。

公开(公告)号：US07504317B2

公开(公告)日：2009-03-17

申请号：US11600070

申请日：2006-11-16

申请人： Tomoyuki Aoki ,  Tomoko Tamura ,  Takuya Tsurume ,  Koji Dairiki

发明人： Tomoyuki Aoki ,  Tomoko Tamura ,  Takuya Tsurume ,  Koji Dairiki

IPC分类号： H01L21/46

CPC分类号： H01L27/1266 ,  H01L21/78 ,  H01L27/1214

摘要： It is an object to provide a manufacturing method of a semiconductor device with high reliability. A plurality of first semiconductor integrated circuits, a plurality of second semiconductor integrated circuits each of which is arranged to be adjacent to one of the first semiconductor integrated circuits, a plurality of third semiconductor integrated circuits each of which is arranged to be adjacent to one of the first semiconductor integrated circuits and one of the second semiconductor integrated circuits, and a plurality of fourth semiconductor integrated circuits each of which is arranged to be adjacent to one of the first semiconductor integrated circuits, one of the second semiconductor integrated circuits, and one of the third semiconductor integrated circuits are formed over a first substrate. The first semiconductor integrated circuits are transferred to a second substrate. A first protective layer is formed to cover the first semiconductor integrated circuits and a surface of the second substrate in the periphery of the first semiconductor integrated circuits. The second substrate and the first protective layer are divided so that the plurality of the first semiconductor integrated circuits is divided into individual pieces and part of the second substrate remains in the periphery of the first semiconductor integrated circuits. Accordingly, a semiconductor device having the first semiconductor integrated circuit is manufactured.

摘要翻译： 本发明的目的是提供一种高可靠性的半导体器件的制造方法。 多个第一半导体集成电路，多个第二半导体集成电路，每个第二半导体集成电路被布置为与第一半导体集成电路之一相邻，多个第三半导体集成电路被布置为与 第一半导体集成电路和第二半导体集成电路之一，以及多个第四半导体集成电路，每个第四半导体集成电路被布置为与第一半导体集成电路之一相邻，第二半导体集成电路之一和第二半导体集成电路之一 第三半导体集成电路形成在第一基板上。 第一半导体集成电路被转移到第二衬底。 形成第一保护层以覆盖第一半导体集成电路和第一半导体集成电路的周边中的第二基板的表面。 第二基板和第一保护层被分割成使得多个第一半导体集成电路被分成单独的部分，并且第二基板的一部分保留在第一半导体集成电路的周围。 因此，制造具有第一半导体集成电路的半导体器件。