公开(公告)号：US06477830B2

公开(公告)日：2002-11-12

申请号：US09833615

申请日：2001-04-13

申请人： Shiro Takakura ,  Masaki Ueno ,  Masahiro Sato ,  Tetsuo Endo

发明人： Shiro Takakura ,  Masaki Ueno ,  Masahiro Sato ,  Tetsuo Endo

IPC分类号： F01N300

CPC分类号： F01N3/0835 ,  F01N3/101 ,  F01N11/00 ,  F01N13/009 ,  F01N13/0093 ,  F01N2250/12 ,  F01N2410/12 ,  F01N2550/03 ,  F01N2550/06 ,  F01N2560/028 ,  F01N2900/0422 ,  Y02T10/22 ,  Y02T10/47

摘要： A fault determining apparatus for an exhaust passage switching valve which is capable of directly, rapidly and properly determining a fault in an exhaust passage switching valve, under conditions such as immediately after the start of an internal combustion engine, in which the switching valve should be essentially operated, without the need for setting a special fault determining mode. The fault determining apparatus determines a fault in the exhaust passage switching valve for switching an exhaust passage of exhaust gases discharged from an internal combustion engine between a main exhaust passage having a three-way catalyst and a bypass exhaust passage having filled in an intermediate portion thereof an adsorbent capable of adsorbing hydrocarbons and moisture in the exhaust gases in accordance with an activated state of the three-way catalyst. The fault determining apparatus comprises a humidity sensor for detecting a humidity of the exhaust gases introduced into the bypass exhaust passage, and an ECU for determining a fault in the exhaust passage switching valve based on the result of detection performed by the humidity sensor when the exhaust passage should have been switched to the bypass exhaust passage by the exhaust passage switching valve.

摘要翻译： 一种用于排气通道切换阀的故障确定装置，其能够在内燃机启动之后的状态下直接，快速和适当地确定排气通道切换阀中的故障，其中切换阀应当 基本上操作，而不需要设置专门的故障确定模式。 故障确定装置确定排气通道切换阀中的故障，用于切换在具有三通催化剂的主排气通道和填充在其中间部分中的旁通排气通道之间从内燃机排出的废气的排气通道 能够根据三元催化剂的活化状态吸附废气中的碳氢化合物和水分的吸附剂。 故障判定装置包括：湿度传感器，用于检测引入旁通排气通道的废气的湿度;以及ECU，其用于根据由排气通道切换阀中的排气通道进行的检测结果来确定排气通道切换阀的故障 通道应该被排气通道切换阀切换到旁通排气通道。

公开(公告)号：US09231370B2

公开(公告)日：2016-01-05

申请号：US13453743

申请日：2012-04-23

申请人： Takamichi Sumitomo ,  Takashi Kyono ,  Masaki Ueno ,  Yusuke Yoshizumi ,  Yohei Enya ,  Masahiro Adachi ,  Shimpei Takagi ,  Katsunori Yanashima

发明人： Takamichi Sumitomo ,  Takashi Kyono ,  Masaki Ueno ,  Yusuke Yoshizumi ,  Yohei Enya ,  Masahiro Adachi ,  Shimpei Takagi ,  Katsunori Yanashima

IPC分类号： H01S5/042 ,  H01S5/32 ,  H01S5/343 ,  B82Y20/00 ,  H01S5/02 ,  H01S5/028 ,  H01S5/22

CPC分类号： H01S5/0425 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/34333

摘要： A group III nitride semiconductor laser device includes a laser structure, an insulating layer, an electrode and dielectric multilayers. The laser structure includes a semiconductor region on a semi-polar primary surface of a hexagonal group III nitride semiconductor support base. The dielectric multilayers are on first and second end-faces for the laser cavity. The c-axis of the group III nitride tilts by an angle ALPHA from the normal axis of the primary surface in the waveguide axis direction from the first end-face to the second end-faces. A pad electrode has first to third portions provided on the first to third regions of the semiconductor regions, respectively. An ohmic electrode is in contact with the third region through an opening of the insulating layer. The first portion has a first arm, which extends to the first end-face edge. The third portion is away from the first end-face edge.

摘要翻译： III族氮化物半导体激光器件包括激光器结构，绝缘层，电极和电介质多层。 激光器结构包括在六方晶III族氮化物半导体支撑基体的半极性主表面上的半导体区域。 电介质多层在激光腔的第一和第二端面上。 III族氮化物的c轴从第一端面到第二端面在波导轴线方向上从主面的法线倾斜角度ALPHA。 焊盘电极具有分别设置在半导体区域的第一至第三区域上的第一至第三部分。 欧姆电极通过绝缘层的开口与第三区域接触。 第一部分具有延伸到第一端面边缘的第一臂。 第三部分远离第一端面边缘。

公开(公告)号：US08920565B2

公开(公告)日：2014-12-30

申请号：US12270867

申请日：2008-11-14

申请人： Masaki Ueno ,  Eiryo Takasuka

发明人： Masaki Ueno ,  Eiryo Takasuka

IPC分类号： C23C16/00 ,  C23C16/50 ,  C23F1/00 ,  H01L21/306 ,  C23C16/455 ,  C30B25/08 ,  C23C16/30

CPC分类号： C23C16/45585 ,  C23C16/303 ,  C23C16/45504 ,  C30B25/08

摘要： Affords MOCVD reactors with which, while deposited films are uniformized in thickness, film deposition efficiency can be improved. An MOCVD reactor (1) is furnished with a susceptor (5) and a duct (11). The susceptor (5) has a carrying surface for heating and carrying substrates (20). The duct (11) is for conducting reaction gas (G) to the substrates (20). The susceptor (5) is rotatable with the carrying surface fronting on the duct (11) interior. The duct (11) has channels (11b) and (11c), which merge on the duct end upstream of Point A4. The height of the duct (11) running along the reaction gas (G) flow direction monotonically diminishes heading toward the duct downstream end from Point P1 to Point P2, stays constant from Point P2 to Point P3, and monotonically diminishes heading downstream from Point P3. Point P1 lies upstream of Point A4, while Point P3 lies on the susceptor (5).

摘要翻译： 提供MOCVD反应器，尽管沉积膜的厚度均匀化，但是可以提高膜沉积效率。 MOCVD反应器（1）配备有基座（5）和导管（11）。 基座（5）具有用于加热和承载基板（20）的承载表面。 管道（11）用于将反应气体（G）传导到基板（20）。 基座（5）能够随着在导管（11）内部的承载表面旋转。 管道（11）具有通道（11b）和（11c），其在点A4上游的管道端部合并。 沿着反应气体（G）流动方向运行的管道（11）的高度单调地减小从点P1到点P2的管道下游端的朝向，从点P2到点P3保持恒定，并且单调地减小从点P3的下游 。 点P1位于点A4的上游，而点P3位于基座（5）上。

公开(公告)号：US08748868B2

公开(公告)日：2014-06-10

申请号：US13294010

申请日：2011-11-10

申请人： Takashi Kyono ,  Yohei Enya ,  Katsushi Akita ,  Masaki Ueno ,  Yusuke Yoshizumi ,  Takamichi Sumitomo

发明人： Takashi Kyono ,  Yohei Enya ,  Katsushi Akita ,  Masaki Ueno ,  Yusuke Yoshizumi ,  Takamichi Sumitomo

IPC分类号： H01L29/06 ,  H01L31/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02661 ,  H01L33/18 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3201 ,  H01S5/3211

摘要： For a nitride semiconductor light emitting device, a c-axis vector of hexagonal GaN of a support substrate is inclined to an X-axis direction with respect to a normal axis Nx normal to a primary surface. In a semiconductor region an active layer, a first gallium nitride-based semiconductor layer, an electron block layer, and a second gallium nitride-based semiconductor layer are arranged along the normal axis on the primary surface of the support substrate. A p-type cladding layer is comprised of AlGaN, and the electron block layer is comprised of AlGaN. The electron block layer is subject to tensile strain in the X-axis direction. The first gallium nitride-based semiconductor layer is subject to compressive strain in the X-axis direction. The misfit dislocation density at an interface is smaller than that at an interface. A barrier to electrons at the interface is raised by piezoelectric polarization.

摘要翻译： 对于氮化物半导体发光器件，支撑衬底的六边形GaN的c轴矢量相对于垂直于主表面的法线轴Nx相对于X轴方向倾斜。 在半导体区域中，在支撑基板的主表面上沿着法线布置有源层，第一氮化镓基半导体层，电子阻挡层和第二氮化镓基半导体层。 p型覆层由AlGaN构成，电子阻挡层由AlGaN构成。 电子阻挡层在X轴方向上受到拉伸应变。 第一氮化镓基半导体层在X轴方向上受到压应变。 界面处的错配位错密度小于界面处的位错密度。 在界面处的电子势垒由压电极化引起。

公开(公告)号：US08718110B2

公开(公告)日：2014-05-06

申请号：US13366636

申请日：2012-02-06

申请人： Takashi Kyono ,  Yohei Enya ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Masaki Ueno ,  Katsunori Yanashima ,  Kunihiko Tasai ,  Hiroshi Nakajima

发明人： Takashi Kyono ,  Yohei Enya ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Masaki Ueno ,  Katsunori Yanashima ,  Kunihiko Tasai ,  Hiroshi Nakajima

IPC分类号： H01S5/00

CPC分类号： H01S5/3201 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： A nitride semiconductor laser includes an electrically conductive support substrate with a primary surface of a gallium nitride based semiconductor, an active layer provided above the primary surface, and a p-type cladding region provided above the primary surface. The primary surface is inclined relative to a reference plane perpendicular to a reference axis extending in a direction of the c-axis of the gallium nitride based semiconductor. The p-type cladding region includes first and second p-type Group III nitride semiconductor layers. The first p-type semiconductor layer comprises an InAlGaN layer including built-in anisotropic strain. The second p-type semiconductor layer comprises semiconductor different from material of the InAlGaN layer. The first nitride semiconductor layer is provided between the second p-type semiconductor layer and the active layer. The second p-type semiconductor layer has a resistivity lower than that of the first p-type semiconductor layer.

摘要翻译： 氮化物半导体激光器包括具有氮化镓基半导体的主表面的导电支撑衬底，设置在主表面上方的有源层和设置在主表面上的p型覆层区域。 主表面相对于垂直于在氮化镓基半导体的c轴方向上延伸的参考轴的参考平面倾斜。 p型包层区域包括第一和第二p型III族氮化物半导体层。 第一p型半导体层包括包括内置各向异性应变的InAlGaN层。 第二p型半导体层包括与InAlGaN层的材料不同的半导体。 第一氮化物半导体层设置在第二p型半导体层和有源层之间。 第二p型半导体层的电阻率低于第一p型半导体层的电阻率。

公开(公告)号：US08548021B2

公开(公告)日：2013-10-01

申请号：US13211858

申请日：2011-08-17

申请人： Kei Fujii ,  Masaki Ueno ,  Katsushi Akita ,  Takashi Kyono ,  Yusuke Yoshizumi ,  Takamichi Sumitomo ,  Yohei Enya

发明人： Kei Fujii ,  Masaki Ueno ,  Katsushi Akita ,  Takashi Kyono ,  Yusuke Yoshizumi ,  Takamichi Sumitomo ,  Yohei Enya

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3404 ,  H01S2304/04

摘要： Provided is a III-nitride semiconductor laser allowing for provision of a low threshold with use of a semipolar plane. A primary surface 13a of a semiconductor substrate 13 is inclined at an angle of inclination AOFF in the range of not less than 50 degrees and not more than 70 degrees toward the a-axis direction of GaN with respect to a reference plane perpendicular to a reference axis Cx along the c-axis direction of GaN. A first cladding layer 15, an active layer 17, and a second cladding layer 19 are provided on the primary surface 13a of the semiconductor substrate 13. The well layers 23a of the active layer 17 comprise InGaN. A polarization degree P in the LED mode of emission from the active layer of the semiconductor laser that reaches lasing is not less than −1 and not more than 0.1. The polarization degree P of the III-nitride semiconductor laser is defined by P=(I1−I2)/(I1+I2), using an electric field component I1 in the X1 direction and an electric field component I2 in the X2 direction of light in the LED mode.

摘要翻译： 提供了允许使用半极性平面提供低阈值的III族氮化物半导体激光器。 半导体基板13的主表面13a相对于垂直于参考的参考平面朝向a轴方向的不小于50度且不超过70度的范围内以倾斜角AOFF倾斜 沿着C轴方向的C x轴。 在半导体衬底13的主表面13a上设置第一覆层15，有源层17和第二覆层19.有源层17的阱层23a包括InGaN。 来自激光器的半导体激光器的有源层的发光LED的偏振度P不小于-1且不大于0.1。 III族氮化物半导体激光器的偏振度P通过使用X1方向的电场分量I1和X2方向的电场分量I2由P =（I1-I2）/（I1 + I2）定义 在LED模式下。

公开(公告)号：US08548020B2

公开(公告)日：2013-10-01

申请号：US12837291

申请日：2010-07-15

申请人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

发明人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

IPC分类号： H01S5/00

摘要： A III-nitride semiconductor laser device includes a laser structure including a support base, a semiconductor region, and an electrode. The support base includes a hexagonal III-nitride semiconductor and a semipolar primary surface. The semiconductor region includes first and second cladding layers and an active layer arranged along an axis normal to the semipolar primary surface. A c-axis of the hexagonal III-nitride semiconductor is inclined at an angle ALPHA with respect to the normal axis toward an m-axis of the hexagonal III-nitride semiconductor. The laser structure includes first and second fractured faces that intersect with an m-n plane defined by the normal axis and the m-axis of the hexagonal III-nitride semiconductor. A laser cavity of the laser device includes the first and second fractured faces. Each of the first and second fractured faces have a stripe structure on an end face of the support base.

公开(公告)号：US08507305B2

公开(公告)日：2013-08-13

申请号：US13443480

申请日：2012-04-10

申请人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Nobuhiro Saga ,  Masahiro Adachi ,  Kazuhide Sumiyoshi ,  Shinji Tokuyama ,  Shimpei Takagi ,  Takatoshi Ikegami ,  Masaki Ueno ,  Koji Katayama

发明人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Nobuhiro Saga ,  Masahiro Adachi ,  Kazuhide Sumiyoshi ,  Shinji Tokuyama ,  Shimpei Takagi ,  Takatoshi Ikegami ,  Masaki Ueno ,  Koji Katayama

IPC分类号： H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202

摘要： A III-nitride semiconductor laser device is provided with a laser structure and an electrode. The laser structure includes a support base which includes a hexagonal III-nitride semiconductor and a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface. The electrode is provided on the semiconductor region. The semiconductor region includes a first cladding layer of a first conductivity type GaN-based semiconductor, a second cladding layer of a second conductivity type GaN-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer.

摘要翻译： III族氮化物半导体激光器件具有激光结构和电极。 激光器结构包括支撑基底，其包括六边形III族氮化物半导体和半极性主表面，以及设置在半极性主表面上的半导体区域。 电极设置在半导体区域上。 半导体区域包括第一导电型GaN基半导体的第一包层，第二导电型GaN基半导体的第二包层和设置在第一包层和第二包层之间的有源层。

公开(公告)号：US08483251B2

公开(公告)日：2013-07-09

申请号：US13294378

申请日：2011-11-11

申请人： Yohei Enya ,  Yusuke Yoshizumi ,  Takashi Kyono ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Takao Nakamura

发明人： Yohei Enya ,  Yusuke Yoshizumi ,  Takashi Kyono ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Takao Nakamura

IPC分类号： H01S5/00

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01S5/2009 ,  H01S5/34333

摘要： Provided is a Group III nitride semiconductor laser diode with a cladding layer capable of providing high optical confinement and carrier confinement. An n-type Al0.08Ga0.92N cladding layer is grown so as to be lattice-relaxed on a (20-21)-plane GaN substrate. A GaN optical guiding layer is grown so as to be lattice-relaxed on the n-type cladding layer. An active layer, a GaN optical guiding layer, an Al0.12Ga0.88N electron blocking layer, and a GaN optical guiding layer are grown so as not to be lattice-relaxed on the optical guiding layer. A p-type Al0.08Ga0.92N cladding layer is grown so as to be lattice-relaxed on the optical guiding layer. A p-type GaN contact layer is grown so as not to be lattice-relaxed on the p-type cladding layer, to produce a semiconductor laser. Dislocation densities at junctions are larger than those at the other junctions.

摘要翻译： 提供了具有能够提供高的光学限制和载流子限制的包层的III族氮化物半导体激光二极管。 生长n型Al0.08Ga0.92N包覆层，使其在（20-21）面GaN衬底上晶格弛豫。 在n型包覆层上生长GaN光引导层以使其晶格弛豫。 生长活性层，GaN光引导层，Al0.12Ga0.88N电子阻挡层和GaN光引导层，使得在导光层上不会格子弛豫。 生长p型Al0.08Ga0.92N覆层，使其在光导层上格子弛豫。 生长p型GaN接触层，以便在p型覆层上不会发生晶格弛豫，以产生半导体激光器。 交界处的位错密度大于其他路口的位错密度。

公开(公告)号：US08476615B2

公开(公告)日：2013-07-02

申请号：US13295840

申请日：2011-11-14

申请人： Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

发明人： Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

IPC分类号： H01L29/06

CPC分类号： H01L33/16 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/34333

摘要： A GaN-based semiconductor light emitting device 11a includes a substrate 13 composed of a GaN-based semiconductor having a primary surface 13a tilting from the c-plane toward the m-axis at a tilt angle α of more than or equal to 63 degrees and less than 80 degrees, a GaN-based semiconductor epitaxial region 15, an active layer 17, an electron blocking layer 27, and a contact layer 29. The active layer 17 is composed of a GaN-based semiconductor containing indium. The substrate 13 has a dislocation density of 1×107 cm−2 or less. In the GaN-based semiconductor light emitting device 11a provided with the active layer containing indium, a decrease in quantum efficiency under high current injection can be moderated.

摘要翻译： GaN基半导体发光器件11a包括由GaN基半导体构成的衬底13，该GaN基半导体具有从c面朝向m轴倾斜角度α大于或等于63度的主表面13a;以及 低于80度的GaN基半导体外延区域15，有源层17，电子阻挡层27和接触层29.有源层17由包含铟的GaN基半导体构成。 基板13的位错密度为1×10 7 cm -2以下。 在具有含有铟的有源层的GaN系半导体发光元件11a中，能够缓和高电流注入时的量子效率的降低。