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    Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis
    61.
    发明授权
    Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis 有权
    用于测量衬底特性或制备用于分析的衬底的方法和系统

    公开(公告)号：US07365321B2

    公开(公告)日：2008-04-29

    申请号：US11086048

    申请日：2005-03-22

    Applicant: Mehran Nasser-Ghodsi ,  Mark Borowicz

    Inventor： Mehran Nasser-Ghodsi ,  Mark Borowicz

    IPC: H01J37/06

    CPC classification number: H01J37/317 ,  G01N1/32 ,  H01J37/244 ,  H01J37/3005 ,  H01J2237/2814 ,  H01J2237/3174 ,  H01J2237/31745

    Abstract: Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.

    Abstract translation: 提供了用于测量基板的特性或准备用于分析的基板的方法和系统。 用于测量衬底的特性的一种方法包括使用电子束去除衬底上的特征的一部分以暴露特征的剩余部分的横截面轮廓。 该特征可以是光致抗蚀剂特征。 该方法还包括测量横截面轮廓的特性。 制备用于分析的基板的方法包括使用化学蚀刻与电子束结合来去除靠近缺陷的衬底上的材料的一部分。 缺陷可能是地下缺陷或部分地下缺陷。 制备用于分析的衬底的另一种方法包括使用化学蚀刻与电子束和光束组合地去除邻近缺陷的衬底上的材料的一部分。

    Methods and systems for optical and non-optical measurements of a substrate
    62.
    发明授权
    Methods and systems for optical and non-optical measurements of a substrate 有权
    用于基板的光学和非光学测量的方法和系统

    公开(公告)号：US07355709B1

    公开(公告)日：2008-04-08

    申请号：US11063228

    申请日：2005-02-22

    Applicant: Christopher F. Bevis ,  Gary Dickerson

    Inventor： Christopher F. Bevis ,  Gary Dickerson

    IPC: G01B11/00

    CPC classification number: G01B11/24 ,  G01N21/956 ,  H01J2237/2482 ,  H01J2237/2817 ,  H01J2237/2826

    Abstract: Methods and systems for measurements of a substrate are provided. One system includes a non-optical subsystem configured to perform first measurements on a substrate. The system also includes an optical subsystem coupled to the non-optical subsystem. The optical subsystem is configured to perform second measurements on the substrate. In addition, the system includes a processor coupled to the subsystems. The processor is configured to calibrate one of the subsystems using the measurements performed by the other subsystem. One method includes performing first measurements on a substrate using a non-optical subsystem and performing second measurements on the substrate using an optical subsystem that is coupled to the non-optical subsystem. The method also includes calibrating one of the subsystems using the measurements performed by the other subsystem.

    Abstract translation: 提供了用于测量基底的方法和系统。 一个系统包括被配置为在衬底上执行第一测量的非光学子系统。 该系统还包括耦合到非光学子系统的光学子系统。 光学子系统被配置为在衬底上执行第二测量。 此外，该系统包括耦合到子系统的处理器。 处理器被配置为使用由另一子系统执行的测量来校准其中一个子系统。 一种方法包括使用非光学子系统在衬底上执行第一测量，并使用耦合到非光学子系统的光学子系统在衬底上执行第二测量。 该方法还包括使用由另一子系统执行的测量来校准子系统之一。

    Systems and Methods for Measuring One or More Characteristics of Patterned Features on a Specimen
    63.
    发明申请
    Systems and Methods for Measuring One or More Characteristics of Patterned Features on a Specimen 有权
    测量样品上图案特征的一个或多个特征的系统和方法

    公开(公告)号：US20070229852A1

    公开(公告)日：2007-10-04

    申请号：US11277856

    申请日：2006-03-29

    Applicant: Dan Wack ,  Haiming Wang ,  Kenneth Gross

    Inventor： Dan Wack ,  Haiming Wang ,  Kenneth Gross

    IPC: G01B11/14 ,  G01N21/55

    CPC classification number: G01B11/24 ,  G01N21/211 ,  G01N21/47 ,  G01N21/956 ,  G01N2021/213 ,  G01N2021/217 ,  G01N2021/4707 ,  G01N2021/4711 ,  G01N2021/4792

    Abstract: Systems and methods for measuring one or more characteristics of patterned features on a specimen are provided. One system includes an optical subsystem configured to acquire measurements of light scattered from the patterned features on the specimen at multiple angles of incidence, multiple azimuthal angles, and multiple wavelengths simultaneously. The system also includes a processor configured to determine the one or more characteristics of the patterned features from the measurements. One method includes acquiring measurements of light scattered from the patterned features on the specimen at multiple angles of incidence, multiple azimuthal angles, and multiple wavelengths simultaneously. The method also includes determining the one or more characteristics of the patterned features from the measurements.

    Abstract translation: 提供了用于测量样本上的图案特征的一个或多个特征的系统和方法。 一个系统包括光学子系统，被配置为从多个入射角，多个方位角和多个波长同时获取从样本上的图案化特征散射的光的测量。 该系统还包括配置成从测量中确定图案化特征的一个或多个特性的处理器。 一种方法包括以多个入射角，多个方位角和多个波长同时从样本上的图案化特征散射的光的测量。 该方法还包括从测量中确定图案化特征的一个或多个特性。

    Systems configured to provide illumination of a specimen during inspection
    64.
    发明授权
    Systems configured to provide illumination of a specimen during inspection 有权
    被配置为在检查期间提供样品的照明的系统

    公开(公告)号：US07199946B2

    公开(公告)日：2007-04-03

    申请号：US11145829

    申请日：2005-06-06

    Applicant: Hwan J. Jeong

    Inventor： Hwan J. Jeong

    IPC: G02B17/00 ,  G01N21/00

    CPC classification number: G02B17/0804 ,  G01N21/8806 ,  G01N21/9501 ,  G01N2201/0636 ,  G02B17/0852

    Abstract: Systems configured to provide illumination of a specimen during inspection are provided. One system includes catoptric elements configured to direct light from a light source to a line across the specimen at an oblique angle of incidence. The catoptric elements include positive and negative elements configured such that pupil distortions of the positive and negative elements are substantially canceled. Another system includes a dioptric element and a catoptric element. The dioptric element and the catoptric element are configured to direct light from a light source to a line across the specimen at an oblique angle of incidence. The dioptric and catoptric elements are also configured such that pupil distortions of the dioptric and catoptric elements are substantially canceled.

    Abstract translation: 提供被配置为在检查期间提供样品的照明的系统。 一个系统包括反射元件，其被配置为将光从光源引导到以倾斜入射角穿过样本的线。 反射元件包括正和负元件，其被配置为使得正和负元件的光瞳畸变被基本上消除。 另一个系统包括一个折射元件和一个折射元件。 折射元件和反射元件被构造成将来自光源的光以倾斜的入射角引导到跨越样本的线。 折射和折射元件也被配置为使得屈光度和折射元件的瞳孔变形基本上被消除。

    Methods and systems for preparing a sample for thin film analysis
    66.
    发明授权
    Methods and systems for preparing a sample for thin film analysis 有权
    制备薄膜分析样品的方法和系统

    公开(公告)号：US07190441B1

    公开(公告)日：2007-03-13

    申请号：US11021555

    申请日：2004-12-22

    Applicant: James T. McWhirter ,  Liang-Guo Wang ,  Hidong Kwak ,  Haixing Zou ,  Dan Georgesco ,  Bernard Lautee ,  Jennming James Chen ,  Gary R. Janik ,  Patrick M. Maxton

    Inventor： James T. McWhirter ,  Liang-Guo Wang ,  Hidong Kwak ,  Haixing Zou ,  Dan Georgesco ,  Bernard Lautee ,  Jennming James Chen ,  Gary R. Janik ,  Patrick M. Maxton

    IPC: G01N1/00

    CPC classification number: G01N1/32 ,  G01N1/2813 ,  H01L21/67028

    Abstract: Methods and systems for preparing a sample for thin film analysis are provided. One system includes an energy beam source configured to generate an energy beam. The system also includes an energy beam delivery subsystem configured to direct the energy beam to a sample and to modify the energy beam such that the energy beam has a substantially flat-top profile on the sample. The energy beam removes a portion of a contaminant layer on the sample to expose an analysis area of a thin film on the sample. One method includes generating an energy beam and modifying the energy beam such that the energy beam has a substantially flat-top profile. The method also includes directing the energy beam to a sample. The energy beam removes a portion of a contaminant layer on the sample to expose an analysis area of a thin film on the sample.

    Abstract translation: 提供了制备用于薄膜分析的样品的方法和系统。 一个系统包括被配置为产生能量束的能量束源。 该系统还包括能量束传送子系统，其配置成将能量束引导到样品并修改能量束，使得能量束在样品上具有基本上平顶的轮廓。 能量束去除样品上的污染物层的一部分以暴露样品上薄膜的分析区域。 一种方法包括产生能量束并修改能量束，使得能量束具有基本平坦的轮廓。 该方法还包括将能量束引导到样品。 能量束去除样品上的污染物层的一部分以暴露样品上薄膜的分析区域。

    Methods and systems for determining a property of an insulating film
    67.
    发明授权
    Methods and systems for determining a property of an insulating film 失效
    用于确定绝缘膜性能的方法和系统

    公开(公告)号：US07012438B1

    公开(公告)日：2006-03-14

    申请号：US10616086

    申请日：2003-07-09

    Applicant: Thomas G. Miller ,  Gregory S. Horner ,  Amin Samsavar ,  Zhiwei Xu ,  Patrick Stevens

    Inventor： Thomas G. Miller ,  Gregory S. Horner ,  Amin Samsavar ,  Zhiwei Xu ,  Patrick Stevens

    IPC: G01R27/08 ,  G01R27/26 ,  G01N27/60

    CPC classification number: H01L22/12 ,  G01R31/2831 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method for determining a property of an insulating film is provided. The method may include obtaining a charge density measurement of the film, a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and a rate of voltage decay of the film. The method may also include determining the property of the film using the charge density, the surface voltage potential, and the rate of voltage decay. A method for determining a thickness of an insulating film is provided. The method may include depositing a charge on the film, measuring a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and measuring a rate of voltage decay of the film. The method may also include determining a thickness of the film using the rate of voltage decay and a theoretical model relating to leakage and film thickness.

    Abstract translation: 提供一种用于确定绝缘膜的性质的方法。 该方法可以包括获得膜的电荷密度测量，膜相对于衬底的体电压电位的表面电压电势以及膜的电压衰减速率。 该方法还可以包括使用电荷密度，表面电压电位和电压衰减速率确定膜的性质。 提供一种确定绝缘膜厚度的方法。 该方法可以包括在膜上沉积电荷，测量膜相对于衬底的体电压电位的表面电压电位，以及测量膜的电压衰减速率。 该方法还可以包括使用电压衰减速率和与泄漏和膜厚度有关的理论模型来确定膜的厚度。

    Systems and methods for simultaneous or sequential multi-perspective specimen defect inspection
    68.
    发明授权
    Systems and methods for simultaneous or sequential multi-perspective specimen defect inspection 有权
    用于同时或顺序多视角样本缺陷检查的系统和方法

    公开(公告)号：US06922236B2

    公开(公告)日：2005-07-26

    申请号：US10192813

    申请日：2002-07-10

    Applicant: Mehdi Vaez-Iravani ,  Stan Stokowski ,  Steven Biellak ,  Jamie Sullivan ,  Keith Wells ,  Mehrdad Nikoonahad

    Inventor： Mehdi Vaez-Iravani ,  Stan Stokowski ,  Steven Biellak ,  Jamie Sullivan ,  Keith Wells ,  Mehrdad Nikoonahad

    IPC: G01N21/84 ,  G01N21/47 ,  G01N21/94 ,  G01N21/95 ,  G01N21/956 ,  H01L21/027 ,  H01L21/66 ,  G01N21/88

    CPC classification number: G01N21/47 ,  G01N21/94 ,  G01N21/9501 ,  G01N2021/8825

    Abstract: Systems and methods for inspecting a surface of a specimen such as a semiconductor wafer are provided. A system may include an illumination system configured to direct a first beam of light to a surface of the specimen at an oblique angle of incidence and to direct a second beam of light to a surface of the specimen at a substantially normal angle. The system may also include a collection system configured to collect at least a portion of the first and second beams of light returned from the surface of the specimen. In addition, the system may include a detection system. The detection system may be configured to process the collected portions of the first and second beams of light. In this manner, a presence of defects on the specimen may be detected from the collected portions of the first and second beams of light.

    Abstract translation: 提供了用于检查诸如半导体晶片的样本的表面的系统和方法。 系统可以包括照明系统，其被配置为以倾斜的入射角度将第一光束引导到样品的表面，并以基本上一般的角度将第二光束引导到样品的表面。 系统还可以包括收集系统，其被配置为收集从样本表面返回的第一和第二光束的至少一部分。 另外，该系统可以包括检测系统。 检测系统可以被配置为处理第一和第二光束的收集部分。 以这种方式，可以从第一和第二光束的收集部分检测出样本上的缺陷。

    Methods for improved monitor and control of lithography processes
    70.
    发明授权
    Methods for improved monitor and control of lithography processes 有权
    改进光刻工艺监测和控制的方法

    公开(公告)号：US09188974B1

    公开(公告)日：2015-11-17

    申请号：US13184565

    申请日：2011-07-17

    Applicant: Chris Mack ,  Moshe E Preil

    Inventor： Chris Mack ,  Moshe E Preil

    IPC: G06F19/00 ,  G05B19/418 ,  G06Q10/06

    CPC classification number: G03F7/70616 ,  G03F7/70525 ,  G03F7/70591 ,  G05B19/41875

    Abstract: Various computer-implemented methods are provided. One method includes determining errors across a field of a lens of a lithography system based on wafer measurements. In addition, the method includes separating the errors into correctable and non-correctable errors across the field. The errors may include dose errors, focus errors, or dose and focus errors. In another embodiment, the method may include determining correction terms for parameter(s) of the lithography system, which if applied to the parameter(s), the correctable errors would be eliminated resulting in approximately optimal imaging performance of the lithography system. Another method includes controlling one or more parameters of features within substantially an entire printed area on a product wafer using a limited number of wafer measurements performed on a test wafer. The wafer measurements may be performed on a first feature type, and the features that are controlled may include a second, different feature type.

    Abstract translation: 提供了各种计算机实现的方法。 一种方法包括基于晶片测量确定光刻系统的透镜的场的误差。 此外，该方法包括将错误分成整个现场的可纠正和不可校正的错误。 误差可能包括剂量误差，焦点误差，或剂量和焦点误差。 在另一个实施例中，该方法可以包括确定光刻系统的参数的校正项，如果应用于参数，则将消除可校正的误差，从而导致光刻系统的近似最佳成像性能。 另一种方法包括使用在测试晶片上执行的有限数量的晶片测量来在产品晶片上的基本整个印刷区域内控制特征的一个或多个参数。 可以在第一特征类型上执行晶片测量，并且被控制的特征可以包括第二不同的特征类型。

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