Abstract:
Electrophoretic deposition provides an inexpensive, efficient process for manufacturing a field emission cathode. Particles of a resistive material are deposited by electrophoretic deposition on a conducting layer overlying an insulating layer. An electron emitting layer is then applied over the resistive material to produce the cathode. By controlling the composition of the deposition bath, an electrophoretic deposition process can be used to efficiently produce field emission cathodes that provide a spatially and temporally stable emission field. The deposition bath for the field emission cathode includes an alcohol, a charging salt, water, and a dispersant. The field emission cathodes can be used as an electron source in a field emission display device.
Abstract:
A method for fabricating an electron field emission cathode, the field emission cathode including a substrate having a field emission layer engaged therewith, where the field emission layer incorporates modified carbon nanotubes and a matrix material to improve field emission characteristics of the cathode and field emission cathode devices implementing such cathodes.
Abstract:
There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus.
Abstract:
A field-emission device is disclosed. The device comprises a solid state structure formed of a crystalline material and an amorphous material, wherein an outer surface of the solid state structure is substantially devoid of the amorphous material, and wherein a p-type conductivity of the crystalline material is higher at or near the outer surface than far from the outer surface.
Abstract:
A field-emission device is disclosed. The device comprises a solid state structure formed of a crystalline material and an amorphous material, wherein an outer surface of the solid state structure is substantially devoid of the amorphous material, and wherein a p-type conductivity of the crystalline material is higher at or near the outer surface than far from the outer surface.
Abstract:
Provided is a manufacturing method of a CNT emitter with density controlled CNT, comprising: (i) fabricating a CNT paste by dispersing a carbon nanotube (CNT) powder, two kinds or more of inorganic fillers which have a lower melting temperature than the CNT and different oxidation degrees of the CNT, and an organic binder in a solvent; (ii) coating the CNT paste on an electrode formed above a substrate; (iii) sintering the substrate coated with the CNT paste to selectively oxidize the CNT around one kind of inorganic filler among two kinds or more of the inorganic fillers; and (iv) treating the surface of the CNT paste so that the surface of the CNT paste is activated.
Abstract:
This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.
Abstract:
An electron emission film having a pattern of diamond in X-ray diffraction and formed of a plurality of diamond fine grains having a grain diameter of 5 nm to 10 nm is formed on a substrate. The electron emission film can restrict the field intensity to a low level when it causes an emission current to flow, and has a uniform electron emission characteristic.
Abstract:
A system and method for addressing individual electron emitters in an emitter array is disclosed. The system includes an emitter array comprising a plurality of emitter elements arranged in a non-rectangular layout and configured to generate at least one electron beam and a plurality of extraction grids positioned adjacent to the emitter array, each extraction grid being associated with at least one emitter element to extract the at least one electron beam therefrom. The field emitter array system also includes a plurality of voltage control channels connected to the plurality of emitter elements and the plurality of extraction grids such that each of the emitter elements and each of the extraction grids is individually addressable. In the field emitter array system, the number of voltage control channels is equal to the sum of a pair of integers closest in value whose product equals the number of emitter elements.
Abstract:
An electron-emitting device of the present invention has an electron-emitting film, and the electron-emitting film is composed of a first layer made of a first material, and a plurality of particles made of a second material whose electric resistivity is lower than that of the first material and provided into the first layer. The first material contains oxygen and nitrogen. A method for manufacturing the electron-emitting device according to the present invention has a step of forming the electron-emitting film, and the electron-emitting film forming step includes a step of forming the plurality of particles made of a second material whose electric resistivity is lower than that of a first material into the first layer made of the first material containing oxygen and nitrogen.