公开(公告)号：US08891571B2

公开(公告)日：2014-11-18

申请号：US12989538

申请日：2009-04-28

申请人： Naoto Jikutani ,  Shunichi Sato ,  Satoru Sugawara ,  Hiroshi Motomura

发明人： Naoto Jikutani ,  Shunichi Sato ,  Satoru Sugawara ,  Hiroshi Motomura

IPC分类号： H01S5/00 ,  B41J2/385 ,  B41J2/45 ,  B41J2/47 ,  B41J2/44 ,  H01S5/183 ,  H01S5/42 ,  H01S5/065 ,  H01S5/32

CPC分类号： H01S5/18361 ,  B41J2/442 ,  B41J2/473 ,  H01L33/10 ,  H01L33/105 ,  H01S5/0655 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/18347 ,  H01S5/1835 ,  H01S5/18358 ,  H01S5/18394 ,  H01S5/187 ,  H01S5/3202 ,  H01S5/423 ,  H01S2301/166 ,  H01S2301/176

摘要： A disclosed vertical cavity surface emitting laser device emits light orthogonally in relation to a substrate and includes a resonator structure including an active layer; and semiconductor multilayer reflectors disposed in such a manner as to sandwich the resonator structure between them and including a confinement structure which confines an injected current and transverse modes of oscillation light at the same time. The confinement structure has an oxidized region which surrounds a current passage region. The oxidized region is formed by oxidizing a part of a selective oxidation layer which includes aluminum and includes at least an oxide. The selective oxidation layer is at least 25 nm in thickness. The semiconductor multilayer reflectors include an optical confinement reducing section which reduces optical confinement in a transverse direction. The optical confinement reducing section is disposed on the substrate side in relation to the resonator structure.

摘要翻译： 所公开的垂直腔表面发射激光器装置相对于衬底正交地发光，并且包括包括有源层的谐振器结构; 以及半导体多层反射器，以将谐振器结构夹在它们之间并且包括同时限制注入的电流和横向振荡模式的约束结构的方式设置。 限制结构具有围绕电流通道区域的氧化区域。 通过氧化包括铝的部分选择性氧化层并至少包含一种氧化物而形成氧化区。 选择性氧化层的厚度至少为25nm。 半导体多层反射器包括减少横向光学限制的光限制减少部分。 光限制减少部分相对于谐振器结构设置在衬底侧。

公开(公告)号：US20140130975A1

公开(公告)日：2014-05-15

申请号：US13940655

申请日：2013-07-12

申请人： Hiroyoshi Shouji ,  Shunichi Sato ,  Akihiro Itoh ,  Kazuhiro Harasaka

发明人： Hiroyoshi Shouji ,  Shunichi Sato ,  Akihiro Itoh ,  Kazuhiro Harasaka

IPC分类号： B32B37/14

CPC分类号： B32B37/14 ,  H01S5/0282 ,  H01S5/0425 ,  H01S5/18313 ,  H01S5/1835 ,  H01S5/18355 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/18391 ,  H01S5/3202 ,  H01S5/423

摘要： A disclosed method of manufacturing a surface emitting laser includes laminating a transparent dielectric layer on an upper surface of a laminated body; forming a first resist pattern on an upper surface of the dielectric layer, the first resist pattern including a pattern defining an outer perimeter of a mesa structure and a pattern protecting a region corresponding to one of the relatively high reflection rate part and the relatively low reflection rate part included in an emitting region; etching the dielectric layer by using the first resist pattern as an etching mask; and forming a second resist pattern protecting a region corresponding to an entire emitting region. These steps are performed before the mesa structure is formed.

摘要翻译： 公开的制造表面发射激光器的方法包括在层叠体的上表面上层叠透明电介质层; 在所述电介质层的上表面上形成第一抗蚀剂图案，所述第一抗蚀剂图案包括限定台面结构的外周的图案和保护对应于相对较高反射率部分之一的区域和相对低反射率的图案 包括在发射区域中的速率部分; 通过使用第一抗蚀剂图案作为蚀刻掩模来蚀刻介电层; 以及形成保护对应于整个发射区域的区域的第二抗蚀剂图案。 这些步骤在形成台面结构之前进行。

公开(公告)号：US20140105647A1

公开(公告)日：2014-04-17

申请号：US14134718

申请日：2013-12-19

申请人： Kazuhiro Harasaka ,  Shunichi Sato ,  Naoto Jikutani

发明人： Kazuhiro Harasaka ,  Shunichi Sato ,  Naoto Jikutani

IPC分类号： G03G15/04 ,  H01S5/18

CPC分类号： G03G15/04 ,  B82Y20/00 ,  G02B26/10 ,  H01S5/18 ,  H01S5/18311 ,  H01S5/18347 ,  H01S5/1835 ,  H01S5/18355 ,  H01S5/18358 ,  H01S5/18391 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/3436 ,  H01S5/423

摘要： A surface-emitting laser device configured to emit laser light in a direction perpendicular to a substrate includes a p-side electrode surrounding an emitting area on an emitting surface to emit the laser light; and a transparent dielectric film formed on an outside area outside a center part of the emitting area and within the emitting area to lower a reflectance to be less than that of the center part. The outside area within the emitting area has shape anisotropy in two mutually perpendicular directions.

摘要翻译： 构造成在垂直于衬底的方向发射激光的表面发射激光器件包括围绕发射表面上的发射区域的p侧电极以发射激光; 以及透明电介质膜，形成在发光区域的中心部分的外侧的外侧区域内，并且在发光区域内，将反射率降低到小于中心部分的反射率。 发射区域内的外部区域在两个相互垂直的方向上具有形状各向异性。

公开(公告)号：US20140010254A1

公开(公告)日：2014-01-09

申请号：US14026990

申请日：2013-09-13

申请人： FLIR Systems, Inc.

发明人： Chad Wang ,  Jonathan Geske

IPC分类号： H01S5/42

CPC分类号： H01S5/423 ,  H01S5/18311 ,  H01S5/18338 ,  H01S5/1835 ,  H01S5/18386

摘要： An array of vertical-cavity surface emitting lasers (VCSELs) may be fabricated with very high fill-factors, thereby enabling very high output power densities during pulse, quasi-continuous wave (QCW), and continuous wave (CW) operation. This high fill-factor is achieved using asymmetrical pillars in a rectangular packing scheme as opposed prior art pillar shapes and packing schemes. The use of asymmetrical pillars maintains high efficiency operation of VCSELs by maintaining minimal current injection distance from the metal contacts to the laser active region and by maintaining efficient waste heat extraction from the VCSEL. This packing scheme for very high fill-factor VCSEL arrays is directly applicable for next generation high-power, substrate removed, VCSEL arrays.

摘要翻译： 可以用非常高的填充因子制造垂直腔表面发射激光器阵列（VCSEL），从而在脉冲，准连续波（QCW）和连续波（CW）操作期间实现非常高的输出功率密度。 这种高填充因子是使用矩形填充方案中的不对称柱来实现的，与现有技术的柱形状和包装方案相反。 使用不对称支柱通过保持从金属触点到激光有源区域的最小电流注入距离以及通过维持来自VCSEL的有效的废热提取来维持VCSEL的高效率操作。 对于非常高的填充因子VCSEL阵列的这种包装方案直接适用于下一代大功率，基板去除VCSEL阵列。

公开(公告)号：US08537874B2

公开(公告)日：2013-09-17

申请号：US12914146

申请日：2010-10-28

申请人： Chad Wang ,  Jonathan Geske

发明人： Chad Wang ,  Jonathan Geske

IPC分类号： H01S3/08

CPC分类号： H01S5/423 ,  H01S5/18311 ,  H01S5/18338 ,  H01S5/1835 ,  H01S5/18386

摘要： An array of vertical-cavity surface emitting lasers (VCSELs) may be fabricated with very high fill-factors, thereby enabling very high output power densities during pulse, quasi-continuous wave (QCW), and continuous wave (CW) operation. This high fill-factor is achieved using asymmetrical pillars in a rectangular packing scheme as opposed prior art pillar shapes and packing schemes. The use of asymmetrical pillars maintains high efficiency operation of VCSELs by maintaining minimal current injection distance from the metal contacts to the laser active region and by maintaining efficient waste heat extraction from the VCSEL. This packing scheme for very high fill-factor VCSEL arrays is directly applicable for next generation high-power, substrate removed, VCSEL arrays.

摘要翻译： 可以用非常高的填充因子制造垂直腔表面发射激光器阵列（VCSEL），从而在脉冲，准连续波（QCW）和连续波（CW）操作期间实现非常高的输出功率密度。 这种高填充因子是使用矩形填充方案中的不对称柱来实现的，与现有技术的柱形状和包装方案相反。 使用不对称支柱通过保持从金属触点到激光有源区域的最小电流注入距离以及通过维持来自VCSEL的有效的废热提取来维持VCSEL的高效率操作。 对于非常高的填充因子VCSEL阵列的这种打包方案直接适用于下一代大功率，基板去除VCSEL阵列。

公开(公告)号：US08446446B2

公开(公告)日：2013-05-21

申请号：US13084969

申请日：2011-04-12

申请人： Fumikazu Hoshi ,  Toshihiro Ishii

发明人： Fumikazu Hoshi ,  Toshihiro Ishii

IPC分类号： B41J2/45

CPC分类号： H01S5/02296 ,  G02B26/124 ,  G02B26/127 ,  H01S5/18313 ,  H01S5/1835 ,  H01S5/18386 ,  H01S5/18394 ,  H01S5/3202 ,  H01S5/423 ,  H01S2301/14

摘要： An optical device includes at least one surface emitting laser device having a dielectric film for causing a central portion of a light emitting region to have a comparatively higher reflectivity than a peripheral portion; a light receiving element disposed, with respect to a first direction, on one side to the surface emitting laser device; and a transparent member disposed in a path of light emitted from the surface emitting laser device and configured to reflect a portion of the light toward the light receiving element as monitoring light. The central portion has shape anisotropy in which a width measured on a line extending in the first direction and passing through the center of the light emitting region is smaller than a width measured on a line extending in a second direction, which is perpendicular to the first direction, and passing through the center of the light emitting region.

摘要翻译： 光学装置包括至少一个表面发射激光器件，其具有用于使发光区域的中心部分具有比周边部分更高的反射率的电介质膜; 光接收元件相对于第一方向设置在表面发射激光器件的一侧; 以及透明构件，其设置在从所述表面发射激光器件发射的光的路径中，并且被配置为将光的一部分朝向所述光接收元件反射为监视光。 中心部分具有形状各向异性，其中在沿着第一方向延伸并且通过发光区域的中心的线上测量的宽度小于在与第一方向垂直的第二方向上延伸的线上测量的宽度 方向，并穿过发光区域的中心。

公开(公告)号：US08275014B2

公开(公告)日：2012-09-25

申请号：US12952284

申请日：2010-11-23

申请人： Katsunari Hanaoka

发明人： Katsunari Hanaoka

IPC分类号： H01S5/00

CPC分类号： H01S5/18369 ,  B41J2/45 ,  H01S5/18313 ,  H01S5/18327 ,  H01S5/1835 ,  H01S5/3202 ,  H01S5/423 ,  H01S2301/166 ,  H01S2301/176 ,  H01S2301/18

摘要： A surface-emitting laser element includes a substrate; a plurality of semiconductor layers laminated on the substrate, the plural semiconductor layers including a resonator structural body including an active layer and semiconductor multilayer film reflection mirrors having the resonator structural body sandwiched therebetween; an electrode provided in such a manner as to surround a emitting region on a surface of the surface-emitting laser element from which light is emitted; and a dielectric film provided in the emitting region such that a reflection ratio of a peripheral part of the emitting region is different from a reflection ratio of a center part of the emitting region. Edge portions that are near edges of the dielectric film are tilted with respect to the surface.

摘要翻译： 表面发射激光元件包括基板; 层叠在所述基板上的多个半导体层，所述多个半导体层包括具有活性层的谐振器结构体和将所述谐振器结构体夹在其间的半导体多层膜反射镜; 电极，其设置成围绕发射光的表面发射激光元件的表面上的发光区域; 以及设置在发光区域中的电介质膜，使得发光区域的周边部分的反射率与发光区域的中心部分的反射率不同。 靠近电介质膜边缘的边缘部分相对于表面倾斜。

公开(公告)号：US20110268143A1

公开(公告)日：2011-11-03

申请号：US13180461

申请日：2011-07-11

申请人： André Strittmatter ,  Christopher L. Chua ,  Peter Kiesel ,  Noble M. Johnson

发明人： André Strittmatter ,  Christopher L. Chua ,  Peter Kiesel ,  Noble M. Johnson

IPC分类号： H01S3/04 ,  H01S5/187 ,  H01S5/34 ,  H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S3/109 ,  H01S5/041 ,  H01S5/18347 ,  H01S5/1835 ,  H01S5/18369 ,  H01S5/18383 ,  H01S5/3407 ,  H01S2301/14

摘要： A semiconductor light emitting device includes a pump light source, a gain structure, and an out-coupling mirror. The gain structure is comprised of InGaN layers that have resonant excitation absorption at the pump wavelength. Light from the pump light source causes the gain structure to emit light, which is reflected by the out-coupling mirror back to the gain structure. A distributed Bragg reflector causes internal reflection within the gain structure. The out-coupling mirror permits light having sufficient energy to pass therethrough for use external to the device. A frequency doubling structure may be disposed between the gain structure and the out-coupling mirror. Output wavelengths in the deep-UV spectrum may be achieved.

公开(公告)号：US20110261850A1

公开(公告)日：2011-10-27

申请号：US13084942

申请日：2011-04-12

申请人： Hiroyoshi SHOUJI ,  Shunichi Sato

发明人： Hiroyoshi SHOUJI ,  Shunichi Sato

IPC分类号： H01S5/00 ,  G02B26/12 ,  G02B26/10 ,  H01L21/00 ,  G02B26/08

CPC分类号： H01S5/18344 ,  B41J2/471 ,  H01S5/18311 ,  H01S5/18327 ,  H01S5/18338 ,  H01S5/18347 ,  H01S5/1835 ,  H01S5/18355 ,  H01S5/18377 ,  H01S5/18386 ,  H01S5/18391 ,  H01S5/3202 ,  H01S5/423 ,  H01S2301/18

摘要： A disclosed surface emitting laser device includes a light emitting section having a mesa structure where a lower reflection mirror, an oscillation structure, and an upper reflection mirror are laminated on a substrate, the oscillation structure including an active layer, the upper reflection mirror including a current confined structure where an oxide surrounds a current passage region, a first dielectric film that coats the entire surface of an emitting region of the light emitting section, the transparent dielectric including a part where the refractive index is relatively high and a part where the refractive index is relatively low, and a second dielectric film that coats a peripheral part on the upper surface of the mesa structure. Further, the dielectric film includes a lower dielectric film and an upper dielectric film, and the lower dielectric film is coated with the upper dielectric film.

摘要翻译： 所公开的表面发射激光器件包括具有台面结构的发光部分，其中下反射镜，振荡结构和上反射镜层叠在基板上，所述振荡结构包括有源层，所述上反射镜包括 电流限制结构，其中氧化物围绕电流通道区域;第一电介质膜，其涂覆发光部分的发射区域的整个表面;透明电介质包括折射率相对较高的部分;以及部分折射率 指数相对较低，并且第二电介质膜涂覆在台面结构的上表面上的周边部分。 此外，电介质膜包括下电介质膜和上电介质膜，并且下介电膜涂覆有上电介质膜。

公开(公告)号：US08040934B2

公开(公告)日：2011-10-18

申请号：US12656166

申请日：2010-01-20

申请人： Yuji Masui ,  Takahiro Arakida ,  Terukazu Naruse ,  Rintaro Koda ,  Naoki Jogan

发明人： Yuji Masui ,  Takahiro Arakida ,  Terukazu Naruse ,  Rintaro Koda ,  Naoki Jogan

IPC分类号： H01S5/00 ,  H01S3/00

CPC分类号： H01S5/18344 ,  H01S5/06226 ,  H01S5/18311 ,  H01S5/1835

摘要： A vertical cavity surface emitting laser capable of reducing parasitic capacitance while suppressing power consumption, and a method of manufacturing thereof are provided. The vertical cavity surface emitting laser includes a columnar mesa including, on a substrate, a first multilayer reflector, an active layer, and a second multilayer reflector in order from the substrate side, and also including a current narrowing layer. The columnar portion of the mesa including the active layer and the current narrowing layer is formed within a region opposed to the first multilayer reflector and a region opposed to the second multilayer reflector, and a cross section area of the columnar portion is smaller than a cross section area of the second multilayer reflector.

摘要翻译： 提供能够抑制功耗的同时降低寄生电容的垂直腔表面发射激光器及其制造方法。 垂直腔表面发射激光器包括柱状台面，其从衬底侧起依次包括在衬底上的第一多层反射器，有源层和第二多层反射器，并且还包括电流变窄层。 包括有源层和电流变窄层的台面的柱状部分形成在与第一多层反射体相对的区域和与第二多层反射体相对的区域中，柱状部分的横截面面积小于十字形 第二多层反射器的截面积。