公开(公告)号：US20150380589A1

公开(公告)日：2015-12-31

申请号：US14766552

申请日：2014-01-24

申请人： NITTO DENKO CORPORATION

发明人： Seiki Teraji ,  Hiroto Nishii ,  Taichi Watanabe ,  Yusuke Yamamoto ,  Kazunori Kawamura ,  Takashi Minemoto ,  Jakapan Chantana

IPC分类号： H01L31/065 ,  H01L31/032

CPC分类号： H01L31/0322 ,  H01L21/02485 ,  H01L21/0251 ,  H01L21/02568 ,  H01L31/03923 ,  H01L31/03928 ,  H01L31/065 ,  H01L31/0749 ,  Y02E10/50 ,  Y02E10/541 ,  Y02E10/543

摘要： The present invention provides a CIGS film substantially free from oxidation of a front surface thereof and a CIGS solar cell employing the CIGS film and substantially free from reduction and variation in conversion efficiency. The CIGS film, which is used as a light absorbing layer for the CIGS solar cell, includes: a first region having a Ga/(In+Ga) ratio progressively reduced along its thickness toward a predetermined first thickness position from a back surface of the CIGS film; a second region having a Ga/(In+Ga) ratio progressively increased along its thickness toward a predetermined second thickness position from the first region; and a third region provided on the second region and having a Ga/(In+Ga) ratio progressively reduced along its thickness toward the front surface of the CIGS film.

摘要翻译： 本发明提供了一种基本上不含氧化前表面的CIGS膜和采用CIGS膜的CIGS太阳能电池，并且基本上没有减少和变化的转换效率。 用作CIGS太阳能电池的光吸收层的CIGS膜包括：具有Ga /（In + Ga）比率的第一区域沿着其厚度朝着预定的第一厚度位置逐渐地从 CIGS电影; 具有Ga /（In + Ga）比率的第二区域沿其厚度从第一区域朝向预定的第二厚度位置逐渐增加; 以及设置在所述第二区域上并且其Ga /（In + Ga）比沿其厚度逐渐减小到所述CIGS膜的前表面的第三区域。

公开(公告)号：US09184329B2

公开(公告)日：2015-11-10

申请号：US14114895

申请日：2012-05-29

申请人： Shinichi Abe ,  Akio Yamamoto ,  Seiji Oguri ,  Kazumasa Umesato

发明人： Shinichi Abe ,  Akio Yamamoto ,  Seiji Oguri ,  Kazumasa Umesato

IPC分类号： H01L31/065 ,  H01L31/032 ,  H01L31/0749 ,  H01L31/046 ,  H01L31/0465

CPC分类号： H01L31/065 ,  H01L31/0322 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/0749 ,  Y02E10/541

摘要： A photoelectric conversion device is disclosed. The photoelectric conversion device includes an electrode layer and a semiconductor layer. The semiconductor layer is located on the electrode layer and contains a group I-III-VI compound. In the semiconductor layer, an atomic ratio of a group I-B element to a group III-B element decreases from one principal surface side of the semiconductor layer on the electrode layer side to a central portion in a thickness direction and increases from the central portion to another principal surface side on a side opposite to the electrode layer.

摘要翻译： 公开了一种光电转换装置。 光电转换装置包括电极层和半导体层。 半导体层位于电极层上并含有I-III-VI族化合物。 在半导体层中，IB族元素与III-B族元素的原子比从电极层侧的半导体层的一个主面侧向厚度方向的中央部分减少，从中央部向 在与电极层相对的一侧的另一主表面侧。

公开(公告)号：US09147783B2

公开(公告)日：2015-09-29

申请号：US13770693

申请日：2013-02-19

申请人： Ascent Solar Technologies, Inc.

发明人： Lawrence M. Woods ,  Joseph H. Armstrong

IPC分类号： H01L21/00 ,  H01L27/15 ,  H01L31/0304 ,  H01L31/18 ,  H01L31/065 ,  H01L31/043 ,  H01L31/0465

CPC分类号： H01L31/0304 ,  H01L31/043 ,  H01L31/0465 ,  H01L31/065 ,  H01L31/1896 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

摘要： A photovoltaic (PV) device has at least one lower PV cell on a substrate, the cell having a metallic back contact, and a I-III-VI absorber, and a transparent conductor layer. An upper PV cell is adhered to the lower PV cell, electrically in series to form a stack. The upper PV cell has III-V absorber and junction layers, the cells are adhered by transparent conductive adhesive having filler of conductive nanostructures or low temperature solder. The upper PV cell has no substrate. An embodiment has at least one shape of patterned conductor making contact to both a top of the upper and a back contact of the lower cells to couple them together in series. In an embodiment, a shape of patterned conductor draws current from excess area of the lower cell to the upper cell, in an alternative embodiment shapes of patterned conductor couples I-III-VI cells not underlying upper cells in series strings, a string being in parallel with at least one stack. In an embodiment, the bonding agent is a polymeric adhesive containing conductive nanostructures. In an embodiment the III-V absorber is grown on single crystal, substrate. A method for forming the device is described.

摘要翻译： 光伏（PV）器件在衬底上具有至少一个下部PV电池，电池具有金属背接触，以及I-III-VI吸收体和透明导体层。 上部PV电池被电连接到下部PV电池，以形成堆叠。 上PV电池具有III-V吸收层和接合层，电池通过具有导电纳米结构或低温焊料填料的透明导电粘合剂粘合。 上部PV电池没有基板。 一个实施例具有图案化导体的至少一种形状，其与下电池的上部和下部接触的顶部接触，以将它们串联在一起。 在一个实施例中，图案化导体的形状从下电池的多余区域吸取电流到上电池，在替代实施例中，图案化导体的形状将I-III-VI电池不连接在串联串中的上电池下方， 与至少一个堆叠平行。 在一个实施方案中，粘合剂是含有导电纳米结构的聚合物粘合剂。 在一个实施方案中，III-V吸收剂在单晶衬底上生长。 描述了用于形成装置的方法。

公开(公告)号：US09087954B2

公开(公告)日：2015-07-21

申请号：US14002686

申请日：2012-02-22

申请人： Stefan Jost ,  Jorg Palm

发明人： Stefan Jost ,  Jorg Palm

IPC分类号： C30B1/02 ,  H01L31/18 ,  H01L21/02 ,  H01L31/065 ,  H01L31/032

CPC分类号： H01L31/18 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/0326 ,  H01L31/065 ,  H01L31/072 ,  Y02E10/50

摘要： A method for producing a compound semiconductor composed of pentanary kesterite/stannite of the type Cu2ZnSn(S,Se)4 is described. The method has the following steps: producing at least one precursor layer stack consisting of a first precursor layer and a second precursor layer; thermally treating the at least one precursor layer stack in a process chamber; and feeding at least one process gas into the process chamber during the thermal treatment of the at least one precursor layer stack. Furthermore, a thin-film solar cell with an absorber consisting of the pentanary compound semiconductor Cu2ZnSn(S,Se)4 on a body is described.

摘要翻译： 描述了由Cu2ZnSn（S，Se）4类型的pentanary kesterite / snite制成的化合物半导体的制造方法。 该方法具有以下步骤：产生由第一前体层和第二前体层组成的至少一个前体层叠层; 在处理室中热处理所述至少一个前体层堆叠; 以及在所述至少一个前体层堆叠的热处理期间将至少一种工艺气体供给到所述处理室中。 此外，描述了具有由主体上的五元化合物半导体Cu 2 ZnSn（S，Se）4组成的吸收体的薄膜太阳能电池。

公开(公告)号：US20150162476A1

公开(公告)日：2015-06-11

申请号：US14403765

申请日：2013-03-15

申请人： Matthew Doty ,  Joshua Zide

发明人： Matthew Doty ,  Joshua Zide

IPC分类号： H01L31/065 ,  H01L31/0735 ,  H01L31/072 ,  H01L31/0352

CPC分类号： H01L31/065 ,  B82Y20/00 ,  B82Y30/00 ,  H01L31/03046 ,  H01L31/035209 ,  H01L31/035218 ,  H01L31/035227 ,  H01L31/035236 ,  H01L31/06 ,  H01L31/072 ,  H01L31/0735 ,  Y02E10/544 ,  Y02P70/521

摘要： Described herein are materials and systems for efficient upconversion of photons. The materials may be disposed in a system comprising two semiconductor materials with an interface therebetween, the interface comprising a valence and/or conduction band offset between the semiconducting materials of about −0.5 eV to about 0.5 eV, including 0, wherein one of the semiconductor materials is a material with discrete energy states and the other is a material with a graded composition and/or controlled band gap. The system can upconvert photons by: a) controlling energy levels of discrete energy states of a semiconducting material in a system to direct tunneling and exciton separation; b) controlling a compositional profile of another semiconducting material in the system to funnel charges away from an upconversion region and into a recombination zone; and c) utilizing the discrete energy states of the semiconducting material in the system to inhibit phonon relaxation.

摘要翻译： 这里描述的是用于有效上转换光子的材料和系统。 这些材料可以被布置在包括其间具有界面的两个半导体材料的系统中，该界面包括在约-0.5eV至约0.5eV（包括0）的半导体材料之间的价带和/或导带偏移，其中半导体 材料是具有离散能量状态的材料，另一种是具有分级成分和/或受控带隙的材料。 系统可以通过以下方式对光子进行上变频：a）控制系统中半导体材料的离散能态的能级，以引导隧穿和激子分离; b）控制系统中另一种半导体材料的组成分布，以将电荷从上转换区域漏入重组区域; 和c）利用系统中的半导体材料的离散能量状态来抑制声子松弛。

公开(公告)号：US09013021B2

公开(公告)日：2015-04-21

申请号：US14034226

申请日：2013-09-23

申请人： Intermolecular, Inc.

发明人： Jeroen Van Duren ,  Haifan Liang

IPC分类号： H01L31/102 ,  H01L31/00 ,  H01L31/18 ,  H01L31/065

CPC分类号： H01L31/18 ,  H01L31/022466 ,  H01L31/0326 ,  H01L31/065 ,  H01L31/0749 ,  H01L31/1832 ,  Y02E10/541 ,  Y02P70/521

摘要： Optical absorbers, solar cells comprising the absorbers, and methods for making the absorbers are disclosed. The optical absorber comprises a semiconductor layer having a bandgap of between about 1.0 eV and about 1.6 eV disposed on a substrate, wherein the semiconductor comprises two or more earth abundant elements. The bandgap of the optical absorber is graded through the thickness of the layer by partial substitution of at least one grading element from the same group in the periodic table as the at least one of the two or more earth abundant elements.

摘要翻译： 公开了光吸收剂，包含吸收体的太阳能电池和制造吸收体的方法。 光吸收器包括具有位于衬底上的约1.0eV至约1.6eV之间的带隙的半导体层，其中该半导体包括两个或更多个大量丰富的元素。 光吸收体的带隙通过至少一个分级元素从周期表中与两个或更多个地球丰富元素中的至少一个元素相同的基团部分地取代层的厚度。

公开(公告)号：US20150075595A1

公开(公告)日：2015-03-19

申请号：US14390115

申请日：2013-04-03

申请人： Commissariat à I'Energie Atomique et aux Energies Alternatives

发明人： Samuel Gall

IPC分类号： H01L31/065 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0352

CPC分类号： H01L31/065 ,  H01L31/022441 ,  H01L31/03529 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for producing a photovoltaic cell with interdigitated contacts in the rear face, comprising: providing a doped silicon substrate; forming, on the rear face of said substrate, a doped semiconductor layer with a first dopant species; forming, on said layer, a dopant layer comprising a second dopant species, of an electric type opposite to that of the first species; forming, in the doped layer, at least one doped region of a type opposite to that of the first species, by irradiation of at least one region of the dopant layer with a luminous flux of fluence greater than a threshold above which the dopants of the irradiated region of the dopant layer diffuse into the region underlying the doped layer in such a way as to exceed the concentration of the first dopant species; and forming, in the doped layer, at least one electrically insulating region, by selective irradiation of at least one region of the dopant layer with a luminous flux of which the fluence is in a range lower than said threshold, at which the dopants of the irradiated region of the dopant layer diffuse into the region underlying the doped semiconductor layer in such a way as to balance the concentrations of the two dopant species in said region.

摘要翻译： 一种用于制造在背面具有交叉接触的光伏电池的方法，包括：提供掺杂的硅衬底; 在所述衬底的背面上形成具有第一掺杂物种的掺杂半导体层; 在所述层上形成与所述第一种类相反的电式的包含第二掺杂物种类的掺杂剂层; 在所述掺杂层中形成与所述第一种类相反的掺杂区域的至少一个掺杂区域，所述至少一个掺杂区域的掺杂剂层的至少一个区域具有大于阈值的光通量， 掺杂剂层的照射区域以超过第一掺杂物种的浓度的方式扩散到掺杂层下面的区域中; 并且在所述掺杂层中通过选择性地照射所述掺杂剂层的至少一个区域的光通量在所述阈值以下的光通量来形成所述掺杂层中的掺杂剂， 掺杂剂层的照射区域以这样的方式扩散到掺杂半导体层下面的区域中，以平衡所述区域中的两种掺杂物种的浓度。

公开(公告)号：US20150059841A1

公开(公告)日：2015-03-05

申请号：US14527274

申请日：2014-10-29

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Bahman Hekmatshoartabari ,  Ali Khakifirooz ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/065 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/0216

CPC分类号： H01L31/065 ,  H01L31/02168 ,  H01L31/022433 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for fabricating a photovoltaic device includes forming a patterned layer on a doped emitter portion of the photovoltaic device, the patterned layer including openings that expose areas of the doped emitter portion and growing an epitaxial layer over the patterned layer such that a crystalline phase grows in contact with the doped emitter portion and a non-crystalline phase grows in contact with the patterned layer. The non-crystalline phase is removed from the patterned layer. Conductive contacts are formed on the epitaxial layer in the openings to form a contact area for the photovoltaic device.

摘要翻译： 一种用于制造光伏器件的方法包括在光伏器件的掺杂发射极部分上形成图案化层，所述图案化层包括暴露掺杂发射极部分的区域并在图案化层上生长外延层的开口，使得结晶相生长 与掺杂的发射极部分接触并且非结晶相生长与图案化层接触。 从图案化层去除非结晶相。 导电触点形成在开口中的外延层上，以形成光伏器件的接触面积。

公开(公告)号：US20150059838A1

公开(公告)日：2015-03-05

申请号：US14390149

申请日：2013-04-02

申请人： LG INNOTEK CO., LTD.

发明人： Do Won Bae

IPC分类号： H01L31/065 ,  H01L31/072

CPC分类号： H01L31/065 ,  H01L31/072 ,  H01L31/0749 ,  Y02E10/541

摘要： A solar cell apparatus according to the embodiment includes a support substrate; a back electrode layer on the support layer; a light absorbing layer on the back electrode layer; a plurality of buffer layers on the light absorbing layer, the plurality of buffer layers having a bandgap gradually increased from a bottom thereof to a top thereof; and a window layer on the buffer layers.

摘要翻译： 根据实施例的太阳能电池装置包括支撑基板; 支撑层上的背面电极层; 背面电极层上的光吸收层; 在所述光吸收层上的多个缓冲层，所述多个缓冲层具有从其底部到其顶部逐渐增加的带隙; 和缓冲层上的窗口层。

公开(公告)号：US08916767B2

公开(公告)日：2014-12-23

申请号：US12635660

申请日：2009-12-10

申请人： Gug-Il Jun ,  Woo-Su Lee ,  Dong-Seop Kim ,  Jin-Seock Kim ,  Byoung-Dong Kim ,  Kang-Hee Lee ,  Dong-Gi Ahn ,  Byung-Joo Lee ,  Hyoung-Jin Park ,  In-Ki Kim

发明人： Gug-Il Jun ,  Woo-Su Lee ,  Dong-Seop Kim ,  Jin-Seock Kim ,  Byoung-Dong Kim ,  Kang-Hee Lee ,  Dong-Gi Ahn ,  Byung-Joo Lee ,  Hyoung-Jin Park ,  In-Ki Kim

IPC分类号： H01L31/00 ,  H01L21/00 ,  H01L31/0392 ,  C23C14/58 ,  H01L31/065 ,  C23C14/14 ,  H01L31/032

CPC分类号： C23C14/14 ,  C23C14/5866 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/065 ,  Y02E10/52 ,  Y02E10/541 ,  Y02E10/544

摘要： A solar cell and a method of fabricating the same are provided according to one or more embodiments. According to an embodiment, the solar cell includes a substrate, a back electrode layer formed on the substrate, a light absorbing layer formed on the back electrode layer, and a transparent electrode layer formed on the light absorbing layer, wherein the light absorbing layer is comprised of copper (Cu), gallium (Ga), indium (In), sulfur (S), and selenium (Se) and includes a first concentration region in which concentrations of sulfur (S) gradually decrease in the light absorbing layer going in a first direction from the back electrode layer to the transparent electrode layer.

摘要翻译： 根据一个或多个实施例提供太阳能电池及其制造方法。 根据一个实施例，太阳能电池包括基板，形成在基板上的背面电极层，形成在背面电极层上的光吸收层和形成在光吸收层上的透明电极层，其中光吸收层是 包括铜（Cu），镓（Ga），铟（In），硫（S）和硒（Se）组成的第一浓度区域，其中吸光层中硫（S）的浓度逐渐降低 从背电极层到透明电极层的第一方向。