中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

127 records (took 0.029 seconds)

    LIGHT-EMITTING DIODE WITH METAL STRUCTURE AND HEAT SINK
    71.
    发明申请
    LIGHT-EMITTING DIODE WITH METAL STRUCTURE AND HEAT SINK 有权
    具有金属结构和散热的发光二极管

    公开(公告)号：US20120228659A1

    公开(公告)日：2012-09-13

    申请号：US13415434

    申请日：2012-03-08

    Applicant: Feng-Jung HSU ,  Chin-Chang HSU ,  Chun-Wei WANG ,  Jian-Chin LIANG

    Inventor： Feng-Jung HSU ,  Chin-Chang HSU ,  Chun-Wei WANG ,  Jian-Chin LIANG

    IPC: H01L33/60 ,  F21V7/20

    CPC classification number: H01L33/642 ,  H01L33/60

    Abstract: A light-emitting diode has a metal structure, a light-emitting chip, and a bowl structure. The metal structure has a platform and a heat sink. The platform has a top face, a first side, and a second side opposite to the first side. A first reflector and a second reflector respectively extend from the first side and the second side. The heat sink extends below the top face and has a drop from the bottom surfaces of the first reflector and the second reflector. The light-emitting chip is disposed on the top face. The bowl structure covers the outer surface of the metal structure and shields the bottom surfaces of the first reflector and the second reflector. A thermal dispassion surface of the heat sink is exposed from the bowl structure. An inner surface of bowl wall has a plurality of reflection structures to promote the light extraction efficiency.

    Abstract translation: 发光二极管具有金属结构，发光芯片和碗结构。 金属结构具有平台和散热器。 平台具有顶面，第一侧和与第一侧相对的第二侧。 第一反射器和第二反射器分别从第一侧和第二侧延伸。 散热器在顶面下方延伸，并且具有从第一反射器和第二反射器的底表面的下降。 发光芯片设置在顶面上。 碗结构覆盖金属结构的外表面并且屏蔽第一反射器和第二反射器的底表面。 散热器的热分散表面从碗结构暴露出来。 碗壁的内表面具有多个反射结构，以提高光提取效率。

    WAFER SPLITTING APPARATUS AND WAFER SPLITTING PROCESS
    73.
    发明申请
    WAFER SPLITTING APPARATUS AND WAFER SPLITTING PROCESS 审中-公开
    WAFER分割设备和WAFER分割过程

    公开(公告)号：US20120160227A1

    公开(公告)日：2012-06-28

    申请号：US13043476

    申请日：2011-03-09

    Applicant: Chien-Sen Weng ,  Meng-Yeng Xing ,  Wei-Chang Yu ,  Chih-Sheng Chen ,  Yu-Ching Chang

    Inventor： Chien-Sen Weng ,  Meng-Yeng Xing ,  Wei-Chang Yu ,  Chih-Sheng Chen ,  Yu-Ching Chang

    IPC: B28D5/04

    CPC classification number: B28D5/0041 ,  B28D5/0023 ,  H01L33/0095

    Abstract: A wafer splitting apparatus suitable for splitting a plurality of chip regions of a wafer into a plurality of independent dice is provided. The wafer splitting apparatus includes a splitting knife body and at least a vibrating hammer. The splitting knife body is disposed at one side of the wafer, and has a first surface facing the wafer. The first surface stretches over a plurality of chip regions in all extending directions of the first surface passing through a center of the first surface. The splitting knife body is disposed between the wafer and the vibrating hammer, and the vibrating hammer is suitable for knocking the splitting knife body in a direction toward the wafer to make the splitting knife body move toward the wafer, so as to split the chip regions of the wafer into a plurality of independent dice. A wafer splitting process is also provided.

    Abstract translation: 提供了一种适于将晶片的多个芯片区域分成多个独立裸片的晶片分割装置。 晶片分割装置包括分割刀体和至少一个振动锤。 分割刀体设置在晶片的一侧，并且具有面向晶片的第一表面。 第一表面在通过第一表面的中心的第一表面的所有延伸方向上在多个芯片区域上延伸。 分割刀体设置在晶片和振动锤之间，振动锤适用于朝向晶片的方向敲击分割刀体，使分割刀体朝向晶片移动，从而将芯片区域 的晶片进入多个独立的骰子。 还提供了晶圆分离工艺。

    INSPECTION MACHINE, INSPECTING METHOD AND INSPECTING SYSTEM
    74.
    发明申请
    INSPECTION MACHINE, INSPECTING METHOD AND INSPECTING SYSTEM 有权
    检验机，检验方法和检验系统

    公开(公告)号：US20120140059A1

    公开(公告)日：2012-06-07

    申请号：US13039276

    申请日：2011-03-02

    Applicant: Hsiao-Liang Hsieh ,  Wen-Ti Lin ,  Hsiang-Cheng Hsieh

    Inventor： Hsiao-Liang Hsieh ,  Wen-Ti Lin ,  Hsiang-Cheng Hsieh

    IPC: H04N7/18

    CPC classification number: G01J1/0252 ,  G01J1/4228 ,  G01J2001/4252 ,  G01R31/2635 ,  G01R31/2893

    Abstract: An inspection machine capable of inspecting optical property and electrical property of a light emitting device is provided. The inspection machine includes a substrate table, a probe mechanism, a heating apparatus, a cooling apparatus, an image-sensing apparatus, a temperature-sensing apparatus and a moving mechanism. The probe mechanism is capable of moving toward the light emitting device to contact therewith. The heating apparatus is capable of heating the light emitting device within a first temperature range. The cooling apparatus is capable of cooling the light emitting device within a second temperature range. The image-sensing apparatus senses a light emitting image provided from the light emitting device. The temperature-sensing apparatus senses the present temperature of the light emitting device. The image-sensing apparatus is disposed on the moving mechanism. The moving mechanism is capable of moving the image-sensing apparatus. An inspecting method and an inspecting system for the inspection machine are also provided.

    Abstract translation: 提供了能够检查发光装置的光学特性和电气性能的检查机。 检查机包括基板台，探针机构，加热装置，冷却装置，图像感测装置，温度感测装置和移动机构。 探针机构能够向发光器件移动以与其接触。 加热装置能够在第一温度范围内加热发光装置。 冷却装置能够在第二温度范围内冷却发光装置。 图像感测装置感测从发光装置提供的发光图像。 温度感测装置感测发光装置的当前温度。 图像感测装置设置在移动机构上。 移动机构能够移动图像感测装置。 还提供了检验机的检查方法和检查系统。

    METHOD FOR FABRICATING LIGHT EMITTING DIODE CHIP
    76.
    发明申请
    METHOD FOR FABRICATING LIGHT EMITTING DIODE CHIP 有权

    公开(公告)号：US20110318858A1

    公开(公告)日：2011-12-29

    申请号：US13220694

    申请日：2011-08-30

    Applicant: Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

    Inventor： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

    IPC: H01L33/44

    CPC classification number: H01L33/387 ,  H01L33/382 ,  H01L33/44

    Abstract: A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

    WHITE-LIGHT EMITTING DEVICE
    79.
    发明申请
    WHITE-LIGHT EMITTING DEVICE 审中-公开
    白光发射装置

    公开(公告)号：US20110057207A1

    公开(公告)日：2011-03-10

    申请号：US12607068

    申请日：2009-10-28

    Applicant: Feng-Cheng Su ,  Cheng-Ta Kuo ,  Chih-Hao Yang

    Inventor： Feng-Cheng Su ,  Cheng-Ta Kuo ,  Chih-Hao Yang

    IPC: H01L33/00

    CPC classification number: F21K9/00 ,  H01L25/0753 ,  H01L33/08 ,  H01L33/50 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An white-light emitting device including a carrier, light emitting diode (LED) chips, and a wavelength converting material is provided. The LED chips are disposed on and electrically connected to the carrier. An equivalent wavelength of the first light emitted from the LED chips and divided into groups is λ. A variation of peak wavelengths of the LED chips in one group is smaller than 5 nm. λ meets an equation: λ = ∑ 1 n  ( λ   i × Ni × Ki ) ∑ 1 n  Ni × Ki n is an integer equal to or larger than 2. λi, Ni, and Ki are respectively an average peak wavelength, an quantity, and an average output efficiency of the LED chips in one group. The variation of λi in different groups is Δλi. 5 nm≦Δλi≦30 nm. The wavelength converting material is excited by the first light to emit a second light. The first light and the second light are mixed to generate a white light.

    Abstract translation: 提供了包括载体，发光二极管（LED）芯片和波长转换材料的白光发射器件。 LED芯片设置在载体上并与其电连接。 从LED芯片发射并分成组的第一光的等效波长为λ。 一组LED芯片的峰值波长变化小于5nm。 λ满足一个等式：λ=Σ1 n（（λi××Ni××××））ΣΣΣNi Ni Ni Ni Ni Ni Ni Ni Ni Ni 2. 2. 2. 2. 2. 2. 2. peak peak，peak peak peak peak 波长，数量和平均输出效率。 不同组的λi变化为＆Dgr;λi。 5nm＆nlE;＆Dgr;λi＆nlE; 30nm。 波长转换材料被第一光激发以发射第二光。 将第一光和第二光混合以产生白光。

    LIGHT-EMITTING DIODE PACKAGE AND WAFER-LEVEL PACKAGING PROCESS OF LIGHT-EMITTING DIODE
    80.
    发明申请
    LIGHT-EMITTING DIODE PACKAGE AND WAFER-LEVEL PACKAGING PROCESS OF LIGHT-EMITTING DIODE 有权
    发光二极管的发光二极管封装和水平包装工艺

    公开(公告)号：US20100258827A1

    公开(公告)日：2010-10-14

    申请号：US12469669

    申请日：2009-05-20

    Applicant: Chia-En Lee ,  Cheng-Ta Kuo ,  Der-Ling Hsia

    Inventor： Chia-En Lee ,  Cheng-Ta Kuo ,  Der-Ling Hsia

    IPC: H01L33/00 ,  H01L21/60

    CPC classification number: H01L33/0079 ,  H01L24/26 ,  H01L24/93 ,  H01L33/486 ,  H01L33/62 ,  H01L33/642 ,  H01L2924/01005 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/00

    Abstract: A wafer-level packaging process of a light-emitting diode is provided. First, a semiconductor stacked layer is formed on a growth substrate. A plurality of barrier patterns and a plurality of reflective layers are then formed on the semiconductor stacked layer, wherein each reflective layer is surrounded by one of the barrier patterns. A first bonding layer is then formed on the semiconductor stacked layer to cover the barrier patterns and the reflective layers. Thereafter, a carrying substrate having a plurality of second bonding layers and a plurality of conductive plugs electrically insulated from each other is provided, and the first bonding layer is bonded with the second bonding layer. The semiconductor stacked layer is then separated from the growth substrate. Next, the semiconductor stacked layer is patterned to form a plurality of semiconductor stacked patterns. Next, each semiconductor stacked pattern is electrically connected to the conductive plug.

    Abstract translation: 提供了发光二极管的晶片级封装工艺。 首先，在生长基板上形成半导体堆叠层。 然后在半导体堆叠层上形成多个阻挡图案和多个反射层，其中每个反射层被一个屏障图案包围。 然后在半导体堆叠层上形成第一结合层以覆盖阻挡图案和反射层。 此后，设置具有多个第二接合层和彼此电绝缘的多个导电插塞的承载基板，并且第一接合层与第二接合层接合。 然后将半导体堆叠层与生长衬底分离。 接下来，对半导体堆叠层进行图案化以形成多个半导体堆叠图案。 接下来，每个半导体堆叠图案电连接到导电插头。

Patent Agency Ranking