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    Air cleaner and engine including the same
    72.
    发明申请
    Air cleaner and engine including the same 有权
    空气净化器和发动机包括相同

    公开(公告)号：US20090159039A1

    公开(公告)日：2009-06-25

    申请号：US12314932

    申请日：2008-12-18

    Applicant: Akira Furuya

    Inventor： Akira Furuya

    IPC: F02M35/02 ,  B01D46/48

    CPC classification number: F02M35/024 ,  B01D46/06 ,  B01D46/10 ,  B01D46/48 ,  B01D46/521 ,  B01D50/002 ,  F02M35/08 ,  Y10S55/28

    Abstract: A tubular channel is disposed in a path of air that flows from an inlet to a dirty side. The cross sectional area of the tubular channel is smaller than the cross-sectional area of the inlet. A dust outlet is disposed in a wall in a path of the air that flows out of the exit of the tubular channels to the dirty side. The dust outlet extends through the wall of the air cleaner from the inside to the outside. As the air blasts out of the dust outlet, dust in the air cleaner is discharged to the outside.

    Abstract translation: 管状通道设置在从入口流向脏侧的空气路径中。 管状通道的横截面面积小于入口的横截面面积。 灰尘出口设置在从管状通道的出口流出到空气的空气的路径中的壁中。 灰尘出口从内向外延伸穿过空气净化器的壁。 当空气从出口出来时，空气滤清器中的灰尘排放到外面。

    THIN FILM DEVICE AND METHOD FOR MANUFACTURING THE SAME
    73.
    发明申请
    THIN FILM DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
    薄膜装置及其制造方法

    公开(公告)号：US20080236885A1

    公开(公告)日：2008-10-02

    申请号：US12053317

    申请日：2008-03-21

    Applicant: Toshiyuki YOSHIZAWA ,  Masaomi ISHIKURA ,  Masahiro MIYAZAKI ,  Akira FURUYA ,  Nobuyuki OKUZAWA

    Inventor： Toshiyuki YOSHIZAWA ,  Masaomi ISHIKURA ,  Masahiro MIYAZAKI ,  Akira FURUYA ,  Nobuyuki OKUZAWA

    IPC: H01L23/28

    CPC classification number: H01G4/40 ,  H01F17/0006 ,  H01F27/40 ,  H01G4/224 ,  H01G4/33 ,  H01L27/016

    Abstract: A terminal electrode body on a substrate is exposed relative to a resin layer, protruding out beyond the side of the resin layer. That is, the terminal electrode body is not covered by the resin layer. The electronic element is covered by an insulating layer and the terminal electrode body and the electronic element are electrically connected. Hence, an electric signal applied to the terminal electrode body can be transmitted to the electronic element. A cover layer covers the terminal electrode body and the boundary between the terminal electrode body and the resin layer.

    Abstract translation: 基板上的端子电极体相对于树脂层露出，突出超出树脂层的侧面。 也就是说，端子电极体未被树脂层覆盖。 电子元件被绝缘层覆盖，并且端子电极体和电子元件电连接。 因此，施加到端子电极体的电信号可以被传送到电子元件。 覆盖层覆盖端子电极体和端子电极体与树脂层之间的边界。

    Crankcase of an engine
    75.
    发明申请
    Crankcase of an engine 有权
    发动机的曲轴箱

    公开(公告)号：US20070240672A1

    公开(公告)日：2007-10-18

    申请号：US11730047

    申请日：2007-03-29

    Applicant: Akira Furuya

    Inventor： Akira Furuya

    IPC: F02B75/22 ,  F02F7/00 ,  F02F1/10

    CPC classification number: F02F7/0021

    Abstract: A crankcase of an engine having a crankshaft therein comprises a skirt part formed in the circumferential direction of the crankshaft and a stiffening rib provided on a wall surface of the skirt part as inclined at a predetermined degree angle to the axis of the crankshaft.

    Abstract translation: 具有曲轴的发动机的曲轴箱包括沿曲轴的圆周方向形成的裙部和设置在裙部的壁面上的加强肋，该加强肋以与曲轴的轴线成预定角度倾斜。

    Thin-film device
    76.
    发明申请
    Thin-film device 有权
    薄膜装置

    公开(公告)号：US20070194404A1

    公开(公告)日：2007-08-23

    申请号：US11701458

    申请日：2007-02-02

    Applicant: Hajime Kuwajima ,  Masahiro Miyazaki ,  Akira Furuya ,  Masahiro Itoh

    Inventor： Hajime Kuwajima ,  Masahiro Miyazaki ,  Akira Furuya ,  Masahiro Itoh

    IPC: H01L29/00

    CPC classification number: H01L27/016 ,  H01L27/12

    Abstract: A thin-film device incorporates: a substrate; an insulating layer, a lower conductor layer, a dielectric film, an insulating layer, an upper conductor layer and a protection film that are stacked in this order on the substrate; and four terminal electrodes. The four terminal electrodes touch part of end faces of the upper conductor layer, and part of the top surface of the upper conductor layer contiguous to the end faces. The protection film has four concave portions, each of which has a shape that is recessed inward from the edge of the protection film except portions thereof corresponding to these concave portions. The four concave portions expose respective portions of the top surface of the upper conductor layer that touch the four terminal electrodes. The four concave portions accommodate respective portions of the four terminal electrodes.

    Abstract translation: 薄膜器件包括：衬底; 绝缘层，下导体层，电介质膜，绝缘层，上导体层和保护膜，其依次层叠在基板上; 和四个端子电极。 四个端子电极接触上导体层的端面的一部分，并且上导体层的顶表面的与端面相邻的部分。 保护膜具有四个凹部，每个凹部具有从除了与这些凹部对应的部分之外的保护膜的边缘向内凹陷的形状。 四个凹部露出接触四个端子电极的上部导体层的上表面的各个部分。 四个凹部容纳四个端子电极的各部分。

    Semiconductor device and method for manufacturing same
    77.
    发明申请
    Semiconductor device and method for manufacturing same 有权
    半导体装置及其制造方法

    公开(公告)号：US20070190341A1

    公开(公告)日：2007-08-16

    申请号：US11704950

    申请日：2007-02-12

    Applicant: Akira Furuya ,  Koji Arita ,  Tetsuya Kurokawa ,  Kaori Noda

    Inventor： Akira Furuya ,  Koji Arita ,  Tetsuya Kurokawa ,  Kaori Noda

    IPC: C25D5/02 ,  B32B13/04

    CPC classification number: C25D3/38 ,  C25D5/50 ,  C25D7/123 ,  C25D15/00 ,  H01L21/2885 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76883

    Abstract: An improved SIV resistance and an improved EM resistance are achieved in the coupling structure containing copper films. A semiconductor device includes: a semiconductor substrate; a second insulating layer formed on or over the semiconductor substrate; a second barrier metal film, formed on the second insulating film, and being capable of preventing copper from diffusing into the second insulating film; and an electrically conducting film formed on the second barrier metal film so as to be in contact with the second barrier metal film, and containing copper and carbon, wherein a distribution of carbon concentration along a depositing direction in the second electrically conducting film includes a first peak and a second peak.

    Abstract translation: 在包含铜膜的耦合结构中实现了改进的SIV电阻和改进的EM电阻。 半导体器件包括：半导体衬底; 形成在所述半导体衬底上或之上的第二绝缘层; 第二阻挡金属膜，形成在所述第二绝缘膜上，并且能够防止铜扩散到所述第二绝缘膜中; 以及形成在所述第二阻挡金属膜上以与所述第二阻挡金属膜接触并且含有铜和碳的导电膜，其中所述第二导电膜中沿着沉积方向的碳浓度的分布包括第一 峰值和第二高峰。

    Thin-film device and method of manufacturing same
    78.
    发明申请
    Thin-film device and method of manufacturing same 有权
    薄膜器件及其制造方法

    公开(公告)号：US20070120130A1

    公开(公告)日：2007-05-31

    申请号：US11588321

    申请日：2006-10-27

    Applicant: Hajime Kuwajima ,  Masahiro Miyazaki ,  Akira Furuya

    Inventor： Hajime Kuwajima ,  Masahiro Miyazaki ,  Akira Furuya

    IPC: H01L33/00

    CPC classification number: H01L28/40

    Abstract: A thin-film device comprises: a substrate; a flattening film made of an insulating material and disposed on the substrate; and a capacitor provided on the flattening film. The capacitor incorporates: a lower conductor layer disposed on the flattening film; a dielectric film disposed on the lower conductor layer; and an upper conductor layer disposed on the dielectric film. The thickness of the dielectric film falls within a range of 0.02 to 1 μm inclusive and is smaller than the thickness of the lower conductor layer. The surface roughness in maximum height of the top surface of the flattening film is smaller than that of the top surface of the substrate and equal to or smaller than the thickness of the dielectric film. The surface roughness in maximum height of the top surface of the lower conductor layer is equal to or smaller than the thickness of the dielectric film.

    Abstract translation: 薄膜器件包括：衬底; 由绝缘材料制成并设置在基板上的扁平薄膜; 以及设置在平坦化膜上的电容器。 电容器包括：设置在平坦化膜上的下导体层; 设置在下导体层上的电介质膜; 以及设置在电介质膜上的上导体层。 电介质膜的厚度在0.02〜1μm的范围内，小于下导体层的厚度。 平坦化膜的上表面的最大高度的表面粗糙度小于衬底顶表面的表面粗糙度，等于或小于电介质膜的厚度。 下导体层的上表面的最大高度的表面粗糙度等于或小于电介质膜的厚度。

    Semiconductor device and method of fabricating the same
    79.
    发明申请
    Semiconductor device and method of fabricating the same 审中-公开
    半导体装置及其制造方法

    公开(公告)号：US20070080463A1

    公开(公告)日：2007-04-12

    申请号：US11540599

    申请日：2006-10-02

    Applicant: Akira Furuya

    Inventor： Akira Furuya

    IPC: H01L23/48

    CPC classification number: H01L21/76849 ,  H01L21/76822 ,  H01L21/76834 ,  H01L21/76867 ,  H01L21/76886 ,  H01L21/76888

    Abstract: A semiconductor device includes a semiconductor substrate, a lower insulating film formed on the semiconductor substrate, an interconnect-forming metal film provided so as to fill a recess formed in the surficial portion of the lower insulating film, and containing copper as a major constituent, an upper insulating film formed on the lower insulating film, and a metal-containing layer formed between the lower insulating film and the upper insulating film, and containing a metal different from copper. The metal-containing layer includes a first region in contact with the interconnect-forming metal film, and a second region in contact with the lower insulating film, and having a composition different from that of the first region, and contains substantially no nitrogen at least in the first region.

    Abstract translation: 半导体器件包括半导体衬底，形成在半导体衬底上的下绝缘膜，设置成填充形成在下绝缘膜的表面部分中的凹部并且以铜为主要成分的互连形成金属膜， 形成在下绝缘膜上的上绝缘膜和形成在下绝缘膜和上绝缘膜之间并含有不同于铜的金属的含金属层。 含金属层包括与互连形成金属膜接触的第一区域和与下绝缘膜接触的第二区域，并且具有与第一区域不同的组成，并且至少基本上不含氮 在第一个地区。

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