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公开(公告)号：US20240159724A1
公开(公告)日：2024-05-16
申请号：US18506533
申请日：2023-11-10
IPC分类号： G01N33/00 , G06N3/0499 , G06N3/096
CPC分类号： G01N33/0062 , G06N3/0499 , G06N3/096
摘要： A gas sensing device for sensing a target gas in a gas mixture, including a measurement module configured for obtaining a measurement signal, the measurement signal being responsive to a concentration of the target gas in the gas mixture, and a processing module configured for determining, for each of a sequence of samples of the measurement signal, a set of features, the features representing respective characteristics of the measurement signal, and using a neural network for determining an estimation of the concentration of the target gas based on the sets of features determined for the samples of the sequence, where the neural network comprises an attention layer to weight respective contributions of the samples to the estimation.
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公开(公告)号：US20240154020A1
公开(公告)日：2024-05-09
申请号：US18500635
申请日：2023-11-02
发明人： Benedikt Stoib , Hans-Joachim Schulze , Marten Müller , Daniel Schlögl , Moriz Jelinek , Holger Schulze
IPC分类号： H01L29/66 , H01L29/06 , H01L29/861
CPC分类号： H01L29/66136 , H01L29/0615 , H01L29/8611
摘要： A semiconductor device includes a semiconductor body having first and second opposite surfaces along a vertical direction, and an active diode area. The active diode area includes: a p-doped anode region adjoining the first surface; an n-doped drift region between the anode region and the second surface; an n-doped cathode contact region adjoining the second surface; a p-doped injection region adjoining the second surface and the cathode contact region; and a p-doped auxiliary region between the drift region and the cathode contact region. The auxiliary region includes first and second sub-regions. In a top view, the first sub-region covers at least part of the injection region and the second sub-region covers at least part of the cathode contact region. In the top view, the auxiliary region includes a plurality of openings covering from 0.1% to an 20% of a surface area of the active diode area at the second surface.
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73.发明公开公开(公告)号：US20240153885A1
公开(公告)日：2024-05-09
申请号：US18498537
申请日：2023-10-31
IPC分类号： H01L23/552 , G01R15/20 , G01R19/00 , H01L21/48 , H01L23/00 , H01L23/495
CPC分类号： H01L23/552 , G01R15/202 , G01R19/0092 , H01L21/4803 , H01L21/4846 , H01L23/49534 , H01L23/49589 , H01L24/48 , H01L2224/48091 , H01L2224/48245
摘要： A semiconductor device contains an electrically conductive carrier and a semiconductor chip arranged on the carrier. Furthermore, the semiconductor device contains a layer stack arranged between the carrier and the semiconductor chip and having a plurality of dielectric layers. The layer stack galvanically isolates the semiconductor chip and the carrier from one another. At least one of the plurality of dielectric layers is coated with an electrically conductive coating.
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公开(公告)号：US11978700B2
公开(公告)日：2024-05-07
申请号：US17872255
申请日：2022-07-25
发明人： Olaf Hohlfeld , Peter Kanschat
IPC分类号： H01L21/00 , H01L21/56 , H01L23/24 , H01L23/31 , H01L23/367 , H01L23/40 , H01L23/498 , H01L25/07 , H01L23/00
CPC分类号： H01L23/49861 , H01L21/568 , H01L23/24 , H01L23/3107 , H01L23/3135 , H01L23/3672 , H01L23/4006 , H01L23/49844 , H01L25/072 , H01L23/564 , H01L2224/48091 , H01L2224/73265 , H01L2924/13055 , H01L2924/13062 , H01L2924/13064 , H01L2924/13091
摘要： A power semiconductor module arrangement includes two or more individual semiconductor devices arranged on a base layer. Each semiconductor device includes a lead frame, a semiconductor body arranged on the lead frame, and a molding material enclosing the semiconductor body and at least part of the lead frame. A frame is arranged on the base layer such that the frame surrounds the two or more individual semiconductor devices. A casting compound at least partly fills a capacity formed by the base layer and the frame, such that the casting compound at least partly encloses the two or more individual semiconductor devices.
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75.发明授权公开(公告)号：US11978693B2
公开(公告)日：2024-05-07
申请号：US17388248
申请日：2021-07-29
发明人： Petteri Palm , Ulrich Froehler , Ralf Otremba , Andreas Riegler
IPC分类号： H01L23/495 , H01L21/56 , H01L21/60 , H01L23/31 , H05K1/18
CPC分类号： H01L23/49565 , H01L21/56 , H01L21/60 , H01L23/3107 , H05K1/182
摘要： A semiconductor device package includes a printed circuit board including a first central area, a second lateral area, and a third lateral area, a semiconductor die including a first main face and a second main face opposite the first main face, a first contact pad on the first main face and a second contact pad on the second main face, the semiconductor die disposed in the first central area of the printed circuit board, a first metallic side wall of the semiconductor device package disposed in the second lateral area of the printed circuit board, a second metallic side wall of the semiconductor device package disposed in the third lateral area of the printed circuit board, wherein at least one of the first metallic side wall and the second metallic side wall is electrically connected with one of the first contact pad or the second contact pad.
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76.发明公开公开(公告)号：US20240145580A1
公开(公告)日：2024-05-02
申请号：US18487170
申请日：2023-10-16
发明人： Andreas Hoffmann
CPC分类号： H01L29/66681 , H01L29/105 , H01L29/7833
摘要： A field-effect transistor (FET) is described. The FET has a dielectric structure which includes a gate dielectric and a shielding dielectric. The shielding dielectric is thicker than the gate dielectric and adjoins or is spaced apart from the gate dielectric along a first lateral direction. A channel region of a first conductivity type adjoins a lower side of the gate dielectric. An auxiliary region of a second conductivity type adjoins the lower side of the gate dielectric and adjoins the channel region along a second lateral direction.
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公开(公告)号：US20240145340A1
公开(公告)日：2024-05-02
申请号：US18406832
申请日：2024-01-08
发明人： Jayaganasan Narayanasamy , Angel Enverge , Chii Shang Hong , Chee Ming Lam , Sanjay Kumar Murugan , Subaramaniym Senivasan
IPC分类号： H01L23/433 , H01L23/00 , H01L23/495 , H01L23/498
CPC分类号： H01L23/4334 , H01L23/49551 , H01L23/49555 , H01L23/49568 , H01L23/49811 , H01L24/84 , H01L23/49513 , H01L24/32 , H01L24/40 , H01L24/73 , H01L2224/32245 , H01L2224/40175 , H01L2224/73263
摘要： A molded semiconductor package includes: a semiconductor die; a substrate attached to a first side of the semiconductor die; a plurality of leads electrically connected to a second side of the semiconductor die opposite the first side; a heat sink clip thermally coupled to a pad at the second side of the semiconductor die; and a molding compound encapsulating the die, part of the leads, part of the heat sink clip, and at least part of the substrate. The molding compound has a first main side, a second main side opposite the first main side and at which the substrate is disposed, and an edge extending between the first main side and the second main side. The leads protrude from opposing first and second faces of the edge of the molding compound. The heat sink clip protrudes from opposing third and fourth faces of the edge of the molding compound.
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公开(公告)号：US20240142572A1
公开(公告)日：2024-05-02
申请号：US18390361
申请日：2023-12-20
发明人： Dian Tresna Nugraha , Markus Bichl , Dyson Wilkes
CPC分类号： G01S7/4013 , G01S7/023 , G01S7/2927
摘要： Signal processing circuitry includes at least one processor configured to obtain a digitized radar signal, and further configured, for one or more iterations, to: determine a first power of at least one first signal sample of the radar signal; determine a second power of at least one second signal sample of the radar signal, the at least one second signal sample being subsequent in time to the at least one first signal sample; and determine a difference value between the second power and the first power. The at least one processor further configured to detecting a burst interference signal occurring within the radar signal based on the one or more difference values from the one or more iterations.
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公开(公告)号：US20240142503A1
公开(公告)日：2024-05-02
申请号：US18493866
申请日：2023-10-25
发明人： Wei Wang , Michael Augustin , Jürgen Schäfer , Dietmar König , Josef Niederl , Shane O'Neill
IPC分类号： G01R23/167
CPC分类号： G01R23/167
摘要： According to various embodiments, a circuit for determining the frequency of a signal is described, comprising an input configured to receive an analog input signal, an analog to digital converter configured to convert the analog input signal to a digital input signal, a digital mixer configured to generate a mixing result signal by mixing the digital input signal with a single bit binary signal having a reference frequency, a low pass filter configured to generate a filtered signal by filtering the mixing result signal, a measuring circuit configured to measure the period of the filtered signal and an output configured to output a value differing from the frequency of the single bit binary signal by the inverse of the measured period as the frequency to be determined.
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公开(公告)号：US11971397B2
公开(公告)日：2024-04-30
申请号：US17361853
申请日：2021-06-29
IPC分类号： G01N33/00
CPC分类号： G01N33/0034 , G01N33/0063 , G01N2033/0068
摘要： A gas sensing device includes one or more chemo-resistive gas sensors; one or more heat sources, wherein the gas sensors are heated according to one or more first temperature profiles during the recovery phases and according to one or more second temperature profiles during the sense phases; a preprocessing processor for generating preprocessed signal samples; a feature extraction processor for extracting one or more feature values from the received preprocessed signal samples; and a gas concentration processor for creating a sensing result, wherein the gas concentration processor includes a classification processor for outputting a class decision value, wherein the classification processor is configured for outputting a confidence value, wherein the classification processor includes a first trained model based algorithm processor, wherein the gas concentration processor comprises a quantification processor for creating an estimation value, and wherein the quantification processor comprises a second trained model based algorithm processor.
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