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    Methods and compositions for identifying nucleic acid molecules using nucleolytic activities and hybridization
    72.
    发明授权
    Methods and compositions for identifying nucleic acid molecules using nucleolytic activities and hybridization 失效
    用核酸分解活性和杂交鉴定核酸分子的方法和组合物

    公开(公告)号：US06900013B1

    公开(公告)日：2005-05-31

    申请号：US09648081

    申请日：2000-08-25

    Applicant: Guoqing Wang ,  Lei Wu ,  Xiaobo Wang ,  Jing Cheng ,  WeiPing Yang

    Inventor： Guoqing Wang ,  Lei Wu ,  Xiaobo Wang ,  Jing Cheng ,  WeiPing Yang

    IPC: C07H21/02 ,  C07H21/04 ,  C12M1/34 ,  C12P19/34 ,  C12Q1/68

    CPC classification number: C12Q1/6816 ,  C07H21/04 ,  C12Q1/6827 ,  C12Q1/6837 ,  C12Q2521/101 ,  C12Q2533/101 ,  C12Q2563/107 ,  C12Q2521/327 ,  C12Q2537/143 ,  C12Q2565/501

    Abstract: The present invention recognizes that identifying genes expressed during developmental processes, stress responses, and disease states can advance understanding of these biological functions, and can contribute to identifying targets for therapeutic drugs. In addition, the present invention recognizes that rapid and reliable profiling of genetic variations, such as mutations and SNPs, is of increasing importance to diagnostics, prognostics, forensics, heredity determinations, and pharmacogenetics. One aspect of the present invention provides a method of identifying one or more nucleic acid molecules that are expressed under a given set of conditions based on their complementarity to known sequences, or one or more mutations or SNPs in a population of nucleic acid molecules. The method includes: contacting at least one probe nucleic acid molecule with a survey population of nucleic acid molecules under conditions that promote nucleic acid hybridization to generate a probe-survey population mixture of nucleic acid molecules, treating the probe-survey population mixture of nucleic acid molecules with a nucleolytic activity, such that nucleolytic activity-sensitive nucleic acid molecules are digested, and contacting the resulting mixture of nucleolytic activity-protected nucleic acid molecules with a solid support comprising one or more attached nucleic acid molecules to generate attached nucleic acid molecule/nucleolytic activity-protected nucleic acid molecule complexes, and identifying one or more of the attached nucleic acid molecules or one or more of the nucleolytic activity-protected nucleic acid molecules in one or more attached nucleic acid molecule/nucleolytic activity-protected nucleic acid molecule complexes.

    Abstract translation: 本发明认识到，在发育过程，应激反应和疾病状态期间表达的鉴定基因可以促进对这些生物功能的理解，并且可以有助于鉴定治疗药物的靶标。 此外，本发明认识到，遗传变异的快速和可靠的分析，例如突变和SNP，对于诊断，预后，取证，遗传测定和药物遗传学是越来越重要的。 本发明的一个方面提供了鉴定一种或多种核酸分子的方法，所述核酸分子基于它们与已知序列的互补性或核酸分子群体中的一个或多个突变或SNP在给定条件下表达。 该方法包括：在促进核酸杂交以产生核酸分子的探针 - 调查群体混合物的条件下使至少一个探针核酸分子与核酸分子的调查群体接触，处理核酸的探针 - 调查群体混合物 具有核分解活性的分子，使得消解活性敏感的核酸核酸分子，并使得到的核分解活性保护的核酸分子的混合物与包含一个或多个连接的核酸分子的固体支持物接触，以产生附着的核酸分子/ 核分解活性保护的核酸分子复合物，以及鉴定一个或多个连接的核酸分子/核酸分解活性保护的核酸分子复合物中所附连的核酸分子或一个或多个核裂解活性保护的核酸分子 。

    Multilayer diffusion barrier for copper interconnections
    73.
    发明申请
    Multilayer diffusion barrier for copper interconnections 有权
    铜互连的多层扩散屏障

    公开(公告)号：US20050023686A1

    公开(公告)日：2005-02-03

    申请号：US10918816

    申请日：2004-08-13

    Applicant: Jing-Cheng Lin

    Inventor： Jing-Cheng Lin

    IPC: H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC classification number: H01L21/76846 ,  H01L21/76856 ,  H01L21/76873 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: It is a general object of the present invention to provide an improved method of fabrication in the formation of an improved copper metal diffusion barrier layer having the structure, W/WSiN/WN, in single and dual damascene interconnect trench/contact via processing with 0.10 micron nodes for MOSFET and CMOS applications. The diffusion barrier is formed by depositing a tungsten nitride bottom layer, followed by an in situ SiH4/NH3 or SiH4/H2 soak forming a WSiN layer, and depositing a final top layer of tungsten. This invention is used to manufacture reliable metal interconnects and contact vias in the fabrication of MOSFET and CMOS devices for both logic and memory applications and the copper diffusion barrier formed, W/WSiN/WN, passes a stringent barrier thermal reliability test at 400° C. Pure single barrier layers, i.e., single layer WN, exhibit copper punch through or copper spiking during the stringent barrier thermal reliability test at 400° C.

    Abstract translation: 本发明的一般目的是提供一种改进的制造方法，该方法是在单和双镶嵌互连沟槽/接触通孔加工中具有以下结构的W / WSiN / WN结构的改进的铜金属扩散阻挡层的形成 微米节点用于MOSFET和CMOS应用。 扩散阻挡层通过沉积氮化钨底层，随后形成SiH4 / NH3或SiH4 / H2浸泡形成WSiN层，并沉积钨的最终顶层形成。 本发明用于在逻辑和存储器应用的MOSFET和CMOS器件的制造中制造可靠的金属互连和接触孔，并且形成的铜扩散阻挡层W / WSiN / WN在400℃下通过严格的阻挡热可靠性测试 在400℃的严格的阻隔热可靠性试验期间，纯单层阻挡层，即单层WN，表现出铜冲穿或铜尖峰。

    Method of forming multilayer diffusion barrier for copper interconnections
    74.
    发明授权
    Method of forming multilayer diffusion barrier for copper interconnections 有权
    形成铜互连多层扩散阻挡层的方法

    公开(公告)号：US06797608B1

    公开(公告)日：2004-09-28

    申请号：US09587465

    申请日：2000-06-05

    Applicant: Jing-Cheng Lin

    Inventor： Jing-Cheng Lin

    IPC: H01L214763

    CPC classification number: H01L21/76846 ,  H01L21/76856 ,  H01L21/76873 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: It is a general object of the present invention to provide an improved method of fabrication in the formation of an improved copper metal diffusion barrier layer having the structure, W/WSiN/WN, in single and dual damascene interconnect trench/contact via processing with 0.10 micron nodes for MOSFET and CMOS applications. The diffusion barrier is formed by depositing a tungsten nitride bottom layer, followed by an in situ SiH4/NH3 or SiH4/H2 soak forming a WSiN layer, and depositing a final top layer of tungsten. This invention is used to manufacture reliable metal interconnects and contact vias in the fabrication of MOSFET and CMOS devices for both logic and memory applications and the copper diffusion barrier formed, W/WSiN/WN, passes a stringent barrier thermal reliability test at 400° C. Pure single barrier layers, i.e., single layer WN, exhibit copper punch through or copper spiking during the stringent barrier thermal reliability test at 400° C.

    Abstract translation: 本发明的一般目的是提供一种改进的制造方法，该方法是在单和双镶嵌互连沟槽/接触通孔加工中具有以下结构的W / WSiN / WN结构的改进的铜金属扩散阻挡层的形成 微米节点用于MOSFET和CMOS应用。 扩散阻挡层通过沉积氮化钨底层，随后形成SiH4 / NH3或SiH4 / H2浸泡形成WSiN层，并沉积钨的最终顶层形成。 本发明用于在逻辑和存储器应用的MOSFET和CMOS器件的制造中制造可靠的金属互连和接触孔，并且形成的铜扩散阻挡层W / WSiN / WN在400℃下通过严格的阻挡热可靠性测试 在400℃的严格的阻隔热可靠性试验期间，纯单层阻挡层，即单层WN，表现出铜冲穿或铜尖峰。

    Apparatus for switching and manipulating particles and method of use thereof
    76.
    发明授权
    Apparatus for switching and manipulating particles and method of use thereof 有权
    用于切换和操纵颗粒的装置及其使用方法

    公开(公告)号：US06596143B1

    公开(公告)日：2003-07-22

    申请号：US09678263

    申请日：2000-10-03

    Applicant: Xiao-Bo Wang ,  Weiping Yang ,  Junquan Xu ,  Jing Cheng ,  Lei Wu

    Inventor： Xiao-Bo Wang ,  Weiping Yang ,  Junquan Xu ,  Jing Cheng ,  Lei Wu

    IPC: G01N2726

    CPC classification number: H02N11/006 ,  B01D57/02 ,  B03C5/028 ,  H02N1/004

    Abstract: A device acts as a particle switch to transport and/or re-direct microparticles which are in a fluid suspension. The switch comprises at least three structural branches and the branches may be connected at a common junction. Particles can be transported along the branches as a result of the forces generated along that branch. Particles are transported into or out of the particle switch via the ends of the branches. Particles can be switched from one branch into one of the other branches. Depending on the properties of the particles, the transportation mechanism may be traveling-wave-dielectrophoresis or traveling-wave-electrophoresis.

    Abstract translation: 装置用作颗粒开关以运输和/或重新引导处于流体悬浮液中的微粒。 开关包括至少三个结构分支，并且分支可以在公共接头处连接。 由于沿该分支产生的力，颗粒可以沿着分支运输。 颗粒通过分支的末端被输送进出颗粒开关。 颗粒可以从一个分支切换到其他分支之一。 根据颗粒的性质，运输机制可以是行波介电电泳或行波电泳。

    SYSTEMS AND METHODS FOR FAULT DETECTION BASED ON PEER STATISTICS
    77.
    发明申请
    SYSTEMS AND METHODS FOR FAULT DETECTION BASED ON PEER STATISTICS 有权

    公开(公告)号：US20210160125A1

    公开(公告)日：2021-05-27

    申请号：US16696281

    申请日：2019-11-26

    Applicant: Jing Cheng

    Inventor： Jing Cheng

    IPC: H04L12/24 ,  G06N20/00 ,  H04W24/08

    Abstract: While many network components include diagnostic capabilities that are sometimes implemented at the hardware level, these diagnostics can be unreliable. Thus, false indications of operability or inoperability can result when these diagnostics are relied upon exclusively. To better detect operational problems with a network component, operational parameters from the network component and one or more peer devices are analyzed to determine whether the network component is operational. In some embodiments, data derived from these operational parameters is provided to a supervised machine learning model, and the model provides output indicating the operational status of the network component. Some embodiments binarize operational parameters of a device and compute a maximum duration the binarized parameters indicate inactivity of the device. Some embodiments compute a moving average of the binarized parameters. The maximum duration and/or moving average(s) are provided to the machine learning model in some embodiments.

    Method of enhancing judgment of gas detector
    78.
    发明授权
    Method of enhancing judgment of gas detector 有权

    公开(公告)号：US10969357B2

    公开(公告)日：2021-04-06

    申请号：US16383819

    申请日：2019-04-15

    Applicant: Jing-Cheng Wei

    Inventor： Jing-Cheng Wei ,  Jun-Ting Wei

    IPC: G01N27/04 ,  G08B21/12 ,  G01N33/00

    Abstract: A method of enhancing judgment of a gas detector contains: dividing a voltage difference between an output signal voltage and an environmental detection voltage of the gas detector into several parts. Each of multiple detecting processes of the gas detector is captured by a microprocessor at the environmental detection voltage for ten times in each microsecond, and a predetermined detection time of each detecting process is 10 seconds. When the environmental detection voltage changes linearly, the predetermined detection time of each detecting process is shorten to 1/10 second/per time. After three successive detection processes change linearly, a warning device is started. Otherwise, the microprocessor compensates the output signal voltage and recovers the predetermined detection time when the environmental detection voltage changes so as to maintain the voltage difference at a certain value.

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