公开(公告)号：US20110097905A1

公开(公告)日：2011-04-28

申请号：US12980633

申请日：2010-12-29

申请人： Seok-jun Won ,  Yong-min Yoo ,  Dae-youn Kim ,  Young-hoon Kim ,  Dae-jin Kwon ,  Weon-hong Kim

发明人： Seok-jun Won ,  Yong-min Yoo ,  Dae-youn Kim ,  Young-hoon Kim ,  Dae-jin Kwon ,  Weon-hong Kim

IPC分类号： H01L21/31 ,  F17D1/00 ,  H01L21/20

CPC分类号： C23C16/45544 ,  C23C16/0272 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4402 ,  C23C16/45561 ,  C23C16/45574 ,  H01L21/00 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/28562 ,  Y10T137/0318

摘要： An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.

摘要翻译： 提供了一种通过改善气阀系统来防止发生死体积而制造使用具有改善吹扫效率的四通阀的半导体器件的装置和方法。 该装置包括反应室，处理基板以制造半导体器件; 第一处理气体供给管，其将第一处理气体供给到所述反应室中; 四通阀，具有第一入口，第二入口，第一出口和第二出口，并安装在第一处理气体供应管上，使得第一入口和第一出口连接到第一处理气体供应管; 连接到所述四通阀的第二入口的第二处理气体供给管，以供应第二处理气体; 连接到四通阀的第二出口的旁路; 和安装在旁路上的闸阀。

公开(公告)号：US20100071507A1

公开(公告)日：2010-03-25

申请号：US12310324

申请日：2008-07-28

申请人： Jae Chun Lee ,  Jae Min Yoo ,  Jin Ki Jeong ,  Manis Kumar Jha

发明人： Jae Chun Lee ,  Jae Min Yoo ,  Jin Ki Jeong ,  Manis Kumar Jha

IPC分类号： C22B1/00

CPC分类号： H05K3/22 ,  C22B7/005 ,  C22B7/006 ,  H05K2203/0783 ,  H05K2203/105 ,  H05K2203/178 ,  Y02P10/234 ,  Y02P70/613 ,  Y10T29/49751

摘要： The present invention relates to a method for recovering valuable metals contained in printed circuit boards of waste electronic machine, and more particularly, to a method for recovering valuable metals from waste printed circuit boards by separating several plastic layers laminated using an organic solution and then separating plastic components from metal components using an electrostatic separation process.According to the present invention, it is possible to separate the non-metal containing the plastic components and the metal components from the waste printed circuit boards by separating the several plastic layers laminated via simple pre-process using an organic solvent and obtain the metal recovery ratio of 99.99% via the pre-process and an electrostatic separation process.

摘要翻译： 本发明涉及一种用于回收废电子机的印刷电路板中所含的有价金属的方法，更具体地说，涉及一种通过分离使用有机溶液层压的多个塑料层然后分离的废旧印刷电路板中的有价金属来回收的方法 使用静电分离工艺的金属部件的塑料部件。 根据本发明，可以通过使用有机溶剂通过简单的预处理分离多个层压的塑料层，从而将废塑料组分和金属组分的非金属与废印刷电路板分离，并获得金属回收 通过预处理和静电分离过程的比例为99.99％。

公开(公告)号：US20080267946A1

公开(公告)日：2008-10-30

申请号：US11817023

申请日：2006-03-08

申请人： Eung Kweon Kim ,  Nae-Choon Yoo ,  Won-Min Yoo

发明人： Eung Kweon Kim ,  Nae-Choon Yoo ,  Won-Min Yoo

IPC分类号： A61K39/395 ,  A61P27/02

CPC分类号： C07K16/22 ,  A61K2039/505

摘要： The present invention relates to a medicine for treating Avellino corneal dystrophy (ACD), and more particularly, to a pharmaceutical composition for treating Avellino corneal dystrophy containing an antibody against TGF-β as an effective ingredient. The pharmaceutical composition of the present invention has an effect of improving symptoms of a patient with severe Avellino corneal dystrophy due to TGF-β induced by exposure to intense light, such as UV etc.

摘要翻译： 本发明涉及用于治疗阿维拉氏角膜营养不良症（ACD）的药物，更具体地，涉及含有抗TGF-β抗体作为有效成分的Avellino角膜营养不良药用组合物。 本发明的药物组合物具有通过暴露于强光如UV等引起的由TGF-β引起的严重的Avellino角膜营养不良症状改善的效果。

公开(公告)号：US07412259B2

公开(公告)日：2008-08-12

申请号：US11062984

申请日：2005-02-22

申请人： Kyung-Min Yoo ,  Doo-Youn Lee

发明人： Kyung-Min Yoo ,  Doo-Youn Lee

IPC分类号： H04B1/00 ,  H04M1/00

CPC分类号： H04M1/0262 ,  H04M1/15 ,  H04M1/72527 ,  H04W88/02

摘要： A mobile phone having a USB interface and including a main body and a battery pack removably mounted to the main body is provided. The mobile phone includes a USB connector that may be connected to an external device to allow data transmission between the external device and the mobile phone; a holding unit for containing the USB connector and from which the USB connector may be withdrawn; and a housing mounted in the mobile phone and including a flash memory for storing data, and a controller for controlling a data signal of the flash memory through the USB connector.

摘要翻译： 提供一种具有USB接口并且包括可拆卸地安装到主体的主体和电池组的移动电话。 手机包括可连接到外部设备的USB连接器，以允许外部设备和移动电话之间的数据传输; 用于容纳所述USB连接器的保持单元，并且所述USB连接器可从所述保持单元中取出; 以及安装在移动电话中并且包括用于存储数据的闪存的外壳，以及用于通过USB连接器控制闪存的数据信号的控制器。

公开(公告)号：US20070063257A1

公开(公告)日：2007-03-22

申请号：US11518724

申请日：2006-09-11

申请人： Sung-Hoi Hur ,  Young-Min Park ,  Sang-Bin Song ,  Min-Cheol Park ,  Ji-Hwon Lee ,  Su-Youn Yi ,  Jang-Min Yoo

发明人： Sung-Hoi Hur ,  Young-Min Park ,  Sang-Bin Song ,  Min-Cheol Park ,  Ji-Hwon Lee ,  Su-Youn Yi ,  Jang-Min Yoo

IPC分类号： H01L29/788 ,  H01L21/8238

CPC分类号： H01L29/7887 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11529

摘要： High-voltage MOS transistors with a floated drain-side auxiliary gate are provided. The high-voltage MOS transistors include a source region and a drain region provided in a semiconductor substrate. A main gate electrode is disposed over the semiconductor substrate between the drain region and the source region. A lower drain-side auxiliary gate and an upper drain-side auxiliary gate are sequentially stacked over the semiconductor substrate between the main gate electrode and the drain region. The lower drain-side auxiliary gate is electrically insulated from the semiconductor substrate, the main gate electrode and the upper drain-side auxiliary gate. Methods of fabricating the high-voltage MOS transistors are also provided.

摘要翻译： 提供了具有浮置漏极侧辅助栅极的高压MOS晶体管。 高压MOS晶体管包括设置在半导体衬底中的源极区域和漏极区域。 主栅极设置在漏区和源区之间的半导体衬底之上。 下侧漏极侧辅助栅极和上部漏极侧辅助栅极依次堆叠在主栅极和漏极区域之间的半导体衬底上。 下漏极侧辅助栅极与半导体基板，主栅电极和上漏极侧辅助栅极电绝缘。 还提供了制造高压MOS晶体管的方法。

公开(公告)号：US20050142208A1

公开(公告)日：2005-06-30

申请号：US10508841

申请日：2003-05-09

申请人： Won Min Yoo ,  Kyung Chang ,  Nae Yoo ,  Ki Keum ,  Sang Lee ,  Gene Lee

发明人： Won Min Yoo ,  Kyung Chang ,  Nae Yoo ,  Ki Keum ,  Sang Lee ,  Gene Lee

IPC分类号： A61K35/14 ,  A61K35/16 ,  A61P17/02 ,  A61P17/10

CPC分类号： A61K35/16

摘要： The present invention relates to a pharmaceutical composition for the treatment of wounds containing blood plasma or serum and a method for treating wounds effectively by applying said composition to the wound site to normalize the tissue-environment around the site.

摘要翻译： 本发明涉及一种用于治疗含有血浆或血清的伤口的药物组合物，以及通过将所述组合物施用于伤口部位来有效地治疗伤口的方法，以使该部位周围的组织环境正常化。

公开(公告)号：US20050136126A1

公开(公告)日：2005-06-23

申请号：US11028767

申请日：2005-01-03

申请人： Ki Keum ,  Naechoon Yoo ,  Won-min Yoo

发明人： Ki Keum ,  Naechoon Yoo ,  Won-min Yoo

IPC分类号： A61K33/00 ,  A61K33/42

CPC分类号： A61K31/133 ,  A61K31/19 ,  A61K33/00 ,  A61K33/42

摘要： The present invention relates to an agent for reducing scar formation, which inhibits the scar formation by injecting sodium bicarbonate to the dermis tissue of the wound with a syringe to directly control pH of the wound site, namely, by alkalinizing the wound to inactivate TGF-β. According to the present invention, the agent for reducing scar formation by controlling the wound healing process can be clinically and immediately applied to the treatment of tylosis scar and keloid, etc., and is effective to the treatment of intractable fibrosis diseases. Also, the invention can be widely applied in many ways as an easy tool which can control the action of TGF-β in a living organism.

摘要翻译： 本发明涉及一种用于减少瘢痕形成的药剂，其通过用注射器将碳酸氢钠注入伤口的真皮组织来抑制瘢痕形成，以直接控制伤口部位的pH，即通过使伤口碱化以使TGF- 测试版 根据本发明，通过控制伤口愈合过程来减少瘢痕形成的药剂可以临床上立即应用于治疗泰乐菌瘢痕和瘢痕疙瘩等，对于治疗难治性纤维化疾病是有效的。 此外，本发明可以以许多方式广泛应用，作为可以控制活体中TGF-β的作用的简单工具。

公开(公告)号：US3502061A

公开(公告)日：1970-03-24

申请号：US3502061D

申请日：1967-02-16

申请人： HYO MIN YOO

发明人： YOO HYO MIN

IPC分类号： F41B11/02 ,  F41B11/00 ,  F41F1/04 ,  F41F7/02

CPC分类号： F41B11/54