公开(公告)号：US4392560A

公开(公告)日：1983-07-12

申请号：US273321

申请日：1981-06-15

Applicant: Kei Nakasu ,  Shigeru Ichikawa ,  Toshihiko Tanaka ,  Mitsuo Ikeda

Inventor： Kei Nakasu ,  Shigeru Ichikawa ,  Toshihiko Tanaka ,  Mitsuo Ikeda

IPC: F16D55/224 ,  F16D55/00 ,  F16D55/2265 ,  F16D55/227 ,  F16D65/097 ,  F16D65/09

CPC classification number: F16D55/227 ,  F16D55/22655 ,  F16D65/0972 ,  F16D2055/0091

Abstract: A disc brake wherein a caliper having a fluid pressure cylinder portion and a reaction portion for urging a pair of pad assemblies onto a disc rotor is shiftably retained by four slide pins. The slide pins are erected from a torque receiving member, one pair on either side of the disc rotor. Respective two slide pins projecting perpendicularly away from the rotor on opposite sides thereof are positioned co-axially to each other. At least one of the four slide pins disposed on the side with the cylinder portion is made into a main slide pin for chiefly regulating the shifting direction of the caliper; and the remaining three slide pins are respectively made into auxiliary slide pins with less capability for regulating the shifting direction than the main slide pin.

Abstract translation: 一种盘式制动器，其中具有流体压力缸部分的卡钳和用于将一对垫组件推动到盘形转子上的反作用部分由四个滑动销可移动地保持。 滑动销从转子接收构件竖立，一对在盘式转子的两侧。 在其相对侧上垂直于转子突出突出的两个滑动销彼此同轴地定位。 设置在与圆筒部分一侧的四个滑动销中的至少一个被制成主滑块，用于主要调节卡钳的移动方向; 其余三个滑动销分别制成辅助滑动销，其具有比主滑动销更小的调节换档方向的能力。

公开(公告)号：US09011994B2

公开(公告)日：2015-04-21

申请号：US13263278

申请日：2010-04-08

Applicant: Akira Hasegawa ,  Toshiya Kuroda ,  Masamitsu Ishitobi ,  Takashi Sanada ,  Toshihiko Tanaka

Inventor： Akira Hasegawa ,  Toshiya Kuroda ,  Masamitsu Ishitobi ,  Takashi Sanada ,  Toshihiko Tanaka

IPC: C09K19/00 ,  C23C16/54 ,  C23C16/40 ,  C23C16/505 ,  B32B15/08 ,  B32B27/32 ,  B32B27/36 ,  H01L51/44 ,  H01L51/52

CPC classification number: C23C16/545 ,  B32B15/08 ,  B32B27/281 ,  B32B27/302 ,  B32B27/306 ,  B32B27/32 ,  B32B27/325 ,  B32B27/34 ,  B32B27/36 ,  B32B27/365 ,  B32B2255/10 ,  B32B2255/20 ,  B32B2307/306 ,  B32B2307/31 ,  B32B2307/412 ,  B32B2307/7242 ,  B32B2307/732 ,  B32B2439/40 ,  B32B2439/60 ,  B32B2553/00 ,  C23C16/401 ,  C23C16/505 ,  H01L51/448 ,  H01L51/5237 ,  H01L51/5253 ,  Y10T428/10 ,  Y10T428/1064 ,  Y10T428/1068 ,  Y10T428/1317 ,  Y10T428/26 ,  Y10T428/265

Abstract: A gas-barrier multilayer film including: a base member; and at least one thin film layer formed on at least one surface of the base member, wherein at least one layer of the thin film layer(s) satisfies at least one of requirements (A) and (B).

Abstract translation: 一种阻气性多层膜，包括：基材; 以及形成在所述基底构件的至少一个表面上的至少一个薄膜层，其中所述薄膜层的至少一层满足要求（A）和（B）中的至少一个。

公开(公告)号：US08546542B2

公开(公告)日：2013-10-01

申请号：US12990775

申请日：2009-05-01

Applicant: Michihiro Hide ,  Toshihiko Tanaka ,  Kaori Ishii ,  Hidenori Suzuki

Inventor： Michihiro Hide ,  Toshihiko Tanaka ,  Kaori Ishii ,  Hidenori Suzuki

IPC: C07K16/00 ,  A61K39/395 ,  C12N5/12

CPC classification number: C07K16/18 ,  C07K2317/54 ,  C07K2317/76 ,  G01N33/6854 ,  G01N2500/10 ,  G01N2800/24

Abstract: The invention relates to an antibody that inhibits histamine releasing activity induced by an antigenic substance contained in sweat. The invention further relates to an antibody which can react with a sweat antigen composition and inhibit the histamine releasing activity of the composition on a sweat antigen stimulation-responsive cell.

Abstract translation: 本发明涉及抑制由汗液中所含的抗原物质诱导的组胺释放活性的抗体。 本发明还涉及可以与汗抗原组合物反应并且抑制组合物在汗抗原刺激响应细胞上释放活性的抗体。

公开(公告)号：US08488866B2

公开(公告)日：2013-07-16

申请号：US12708041

申请日：2010-02-18

Applicant: Tsuneo Terasawa ,  Toshihiko Tanaka ,  Hiroyuki Shigemura ,  Hajime Aoyama ,  Osamu Suga

Inventor： Tsuneo Terasawa ,  Toshihiko Tanaka ,  Hiroyuki Shigemura ,  Hajime Aoyama ,  Osamu Suga

IPC: G06K9/00

CPC classification number: G01N21/9501 ,  B82Y10/00 ,  B82Y40/00 ,  G01N21/956 ,  G03F1/24 ,  G03F1/84 ,  G03F7/70941 ,  G06T7/0006 ,  G06T2207/30148

Abstract: A inspection image data of the chip A is captured and the data representing the amount of correction of flare corresponded to the chip A is appropriately loaded from the map storage block. Next, a inspection image of the chip A′ is captured, and the data representing the amount of correction of flare corresponded to the chip A′ is loaded from the flare map storage block as the amount of shifting of the edge of the contour of the pattern. The amount of correction is converted, by a correction data generation block which is a correction data generator, into the amount of geometrical correction of pattern which provides correction data. In the comparison block, the images of the geometry of two chips are compared and corrected on the amount of correction of flare generated by a correction data generation block, to thereby judge whether defect is found or not.

Abstract translation: 捕获芯片A的检查图像数据，并且从地图存储块适当地加载表示对应于芯片A的闪光的校正量的数据。 接下来，捕获芯片A'的检查图像，并且表示与芯片A'相对应的闪光量的校正量的数据从闪光图存储块加载为轮廓的边缘的移位量 模式。 通过作为校正数据生成器的校正数据生成块将修正量转换为提供校正数据的图案的几何校正量。 在比较块中，对由校正数据生成块生成的闪光的校正量进行比较和修正两个芯片的几何图像，从而判断是否存在缺陷。

公开(公告)号：US20130065163A1

公开(公告)日：2013-03-14

申请号：US13592333

申请日：2012-08-22

Applicant: Toshihiko TANAKA

Inventor： Toshihiko TANAKA

IPC: G03F1/22

CPC classification number: G03F1/24 ,  G03F1/72 ,  G03F1/82 ,  G03F1/84

Abstract: Techniques for easily fabricating defect-free EUV masks with good yield are provided. A method of manufacturing an EUV mask according to the present invention includes the steps of: carrying out a defect inspection after depositing a multilayer film on a substrate; if a defect is found in the defect inspection, determining whether the defect is a recessed defect, a protruded defect, or defects in which the recessed defect and the protruded defect are mixed, and if the defects are the mixed defects of the recessed defect and the protruded defect, determining the relation in size between the defects; and depositing an additional multilayer film on the multilayer film while changing a film forming method in accordance with the results of the determination.

Abstract translation: 提供了用于容易地制造具有良好产量的无缺陷EUV掩模的技术。 根据本发明的制造EUV掩模的方法包括以下步骤：在将多层膜沉积在基板上之后执行缺陷检查; 如果在缺陷检查中发现缺陷，则确定缺陷是凹陷缺陷，突出缺陷还是凹陷缺陷和突出缺陷混合的缺陷，并且如果缺陷是凹陷缺陷的混合缺陷和 突出的缺陷，确定缺陷之间的尺寸关系; 并且在根据测定结果改变成膜方法的同时在多层膜上沉积另外的多层膜。

公开(公告)号：US20110178128A1

公开(公告)日：2011-07-21

申请号：US13119242

申请日：2009-09-16

Applicant: Sumie Sekiguchi ,  Takayuki Ishige ,  Masanori Minoguchi ,  Hideki Horiuchi ,  Shinichirou Ono ,  Toshihiko Tanaka

Inventor： Sumie Sekiguchi ,  Takayuki Ishige ,  Masanori Minoguchi ,  Hideki Horiuchi ,  Shinichirou Ono ,  Toshihiko Tanaka

IPC: A61K31/454 ,  C07D401/04 ,  A61P25/00 ,  A61P25/32 ,  A61P25/36 ,  A61P25/22

CPC classification number: A61K31/454 ,  C07D401/04

Abstract: The present invention aims to provide a stable form of (R)-2-{3-[1-(acenaphthen-1-yl)piperidin-4-yl]-2,3-dihydro-2-oxo-benzimidazol-1-yl}-N-methylacetamide, which is free of problems of water adsorption and the like, and shows superior water solubility.The present invention provides a crystal and a salt of (R)-2-{3-[1-(acenaphthen-1-yl)piperidin-4-yl]-2,3-dihydro-2-oxo-benzimidazol-1-yl}-N-methylacetamide in a crystal form.

Abstract translation: 本发明旨在提供稳定形式的（R）-2- {3- [1-（苊-1-基）哌啶-4-基] -2,3-二氢-2-氧代 - 苯并咪唑-1-基 - 吡啶-2-基} -N-甲基乙酰胺，其没有水吸附等问题，并且表现出优异的水溶性。 本发明提供了（R）-2- {3- [1-（苊-1-基）哌啶-4-基] -2,3-二氢-2-氧代 - 苯并咪唑-1-基的晶体和盐， 吡啶-3-基} -N-甲基乙酰胺。

公开(公告)号：US07975679B2

公开(公告)日：2011-07-12

申请号：US12135287

申请日：2008-06-09

Applicant: Toshihiko Tanaka

Inventor： Toshihiko Tanaka

IPC: F02D41/00

CPC classification number: F02D41/0025 ,  F02D19/0623 ,  F02D19/0657 ,  F02D19/088 ,  F02D41/1454 ,  F02D2200/0612 ,  Y02T10/36

Abstract: A other-type fuel contamination determination apparatus for an internal combustion engine includes an exhaust gas sensor. The exhaust gas sensor is configured for obtaining one of (a) an air-fuel ratio and (b) a combustion state for the internal combustion engine based on exhaust gas. The other-type fuel contamination determination apparatus determines whether other-type fuel contaminates fuel that is supplied to the internal combustion engine based on an output by the exhaust gas sensor.

Abstract translation: 用于内燃机的另一种燃料污染物确定装置包括废气传感器。 排气传感器被构造成获得（a）空燃比和（b）基于废气的内燃机的燃烧状态之一。 另一种燃料污染判定装置基于排气传感器的输出，判定其他型燃料是否污染供给到内燃机的燃料。

公开(公告)号：US07960076B2

公开(公告)日：2011-06-14

申请号：US12329126

申请日：2008-12-05

Applicant: Takashi Kamo ,  Osamu Suga ,  Toshihiko Tanaka

Inventor： Takashi Kamo ,  Osamu Suga ,  Toshihiko Tanaka

IPC: G03F1/00

CPC classification number: G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/58

Abstract: A reflective-type mask having a main surface including a pattern region in the main surface, the pattern region including a multilayer reflective film which reflects the exposure light and a first absorber pattern on the multilayer reflective film, the first absorber pattern including a pattern which absorbs the exposure light and corresponds to a pattern to be formed on a wafer, a light shielding region in the main surface for preventing a region on the wafer excluding a predetermined region from being irradiated with the exposure light when the main surface is irradiated with the exposure light for transferring the first absorber pattern to the predetermined region, the light shielding region including a second absorber pattern having a lower reflectivity to the exposure light than the first absorber pattern and being provided in a position differing from a position in which the first absorber pattern is provided.

Abstract translation: 一种反射型掩模，其具有包括主表面中的图案区域的主表面，所述图案区域包括反射所述曝光光的多层反射膜和所述多层反射膜上的第一吸收体图案，所述第一吸收体图案包括图案， 吸收曝光光并且对应于要在晶片上形成的图案，主表面上的遮光区域，用于防止当主表面被照射时，除了预定区域之外的晶片上的区域被照射曝光 用于将第一吸收体图案转印到预定区域的曝光光，所述遮光区域包括与所述第一吸收体图案相比对所述曝光光具有较低反射率的第二吸收体图案，并且设置在与所述第一吸收体 提供图案。

公开(公告)号：US20110043811A1

公开(公告)日：2011-02-24

申请号：US12750396

申请日：2010-03-30

Applicant: Takeshi Yamane ,  Tsuneo Terasawa ,  Toshihiko Tanaka

Inventor： Takeshi Yamane ,  Tsuneo Terasawa ,  Toshihiko Tanaka

IPC: G01N21/47 ,  G01N21/00

CPC classification number: G01N21/956 ,  G01N2021/8874 ,  G01N2021/95676 ,  G03F1/84

Abstract: A method for measuring a shape of a phase defect existing on an exposure mask includes making inspection light incident on the mask, measuring the intensity of light scattered in an angular range in which the width of an scattering area on the phase defect can be predicted, calculating a radius of the phase defect based on the measured scattered light intensity, changing the angular range of scattered light to be measured, remeasuring scattered light intensity in the thus changed angular range, and calculating a scattering cross-sectional area based on the scattered light intensity obtained by remeasurement. A process of remeasuring the scattered light intensity and calculating the scattering cross-sectional area is repeatedly performed until the remeasured scattered light intensity is saturated and the shape of the phase defect is determined by using the calculated radius of the phase defect and each of the calculated scattering cross-sectional areas.

Abstract translation: 用于测量存在于曝光掩模上的相位缺陷的形状的方法包括：使检测光入射到掩模上，测量在可预测相位缺陷上的散射面积的宽度的角度范围内散射的光的强度， 基于所测量的散射光强度，改变要测量的散射光的角度范围来计算相位缺陷的半径，在如此改变的角度范围内重新测量散射光强度，以及基于散射光计算散射截面积 通过重新测量获得的强度。 重新进行重新测量散射光强度并计算散射横截面积的过程，直到重新测量的散射光强度饱和，并且通过使用计算出的相位缺陷的半径来确定相位缺陷的形状， 散射横截面积。

公开(公告)号：US20110014451A1

公开(公告)日：2011-01-20

申请号：US12920613

申请日：2009-03-02

Applicant: Toshihiko Tanaka

Inventor： Toshihiko Tanaka

IPC: B32B9/04 ,  B32B5/00 ,  B32B27/00 ,  B32B3/26 ,  B32B15/04 ,  B32B17/06 ,  B32B37/12 ,  B05D3/02 ,  C01B31/06 ,  C08L27/18

CPC classification number: C30B29/04 ,  B82Y30/00 ,  C01B32/28 ,  C30B25/105 ,  Y10T156/10 ,  Y10T428/249953 ,  Y10T428/31678

Abstract: Disclosed is a diamond film that can solve a problem of a conventional thin film of diamond which, due to insoluble, infusible and hardly machinable properties of the diamond, is produced by plasma CVD requiring the use of a disadvantageously large apparatus. Specifically, a nanodiamond film, which can be simply produced without the need to use a large apparatus, is disclosed. The nanodiamond film is characterized by comprising a nanodiamond. The nanodiamond film has a thickness of not more than 5000 nm.

Abstract translation: 公开了一种金刚石膜，其可以解决常规的金刚石薄膜的问题，由于金刚石的不溶性，难以加工和难以加工的特性，通过等离子体CVD产生，需要使用不利的大型设备。 具体地，公开了可以简单地制造而不需要使用大型装置的纳米金刚石膜。 纳米金刚石膜的特征在于包括纳米金刚石。 纳米金刚石膜的厚度不大于5000nm。