公开(公告)号：US07175945B2

公开(公告)日：2007-02-13

申请号：US11084556

申请日：2005-03-16

申请人： Walter Dean Mieher ,  Daniel Wack ,  Ady Levy

发明人： Walter Dean Mieher ,  Daniel Wack ,  Ady Levy

IPC分类号： G03F9/00 ,  G03C5/00 ,  G01B11/00

CPC分类号： G03F7/70641 ,  G03F1/28 ,  G03F1/44 ,  G06K7/0095

摘要： Methods and device structures used to determine the focus quality of a photolithographic pattern or a photolithographic system are disclosed. One aspect of the invention relates to focus masking structures configured to form focus patterns that contain focus information relating to the focus quality. The focus masking structures generally include a plurality of parallel source lines that are separated by alternating phase shift zones. Another aspect of the invention relates to focus patterns that change with changes in focus. The focus patterns generally include a plurality of periodic structures that form measurable shifts therebetween corresponding to the sign and magnitude of defocus. Another aspect of the invention relates to a method of determining the focus quality of a photolithographic pattern or a photolithographic system. The method generally includes: providing a focus masking structure, forming a focus pattern on a work piece with the focus masking structure, and obtaining focus information from the focus pattern. The focus information may be obtained using a variety of techniques, as for example, scatterometry techniques, scanning techniques, imaging techniques, phase based techniques, and the like.

摘要翻译： 公开了用于确定光刻图案或光刻系统的焦点质量的方法和装置结构。 本发明的一个方面涉及被配置为形成聚焦图案的聚焦掩模结构，其包含与焦点质量相关的焦点信息。 聚焦掩模结构通常包括由交替的相移区域分开的多个平行的源极线。 本发明的另一方面涉及随焦点变化而变化的聚焦图案。 聚焦图案通常包括多个周期性结构，其在散焦的符号和大小之间形成可测量的偏移。 本发明的另一方面涉及一种确定光刻图案或光刻系统的焦点质量的方法。 该方法通常包括：提供聚焦掩蔽结构，在聚焦掩模结构的工件上形成聚焦图案，以及从焦点图案获得聚焦信息。 可以使用各种技术获得焦点信息，例如散射测量技术，扫描技术，成像技术，基于相位的技术等。

公开(公告)号：US20060234145A1

公开(公告)日：2006-10-19

申请号：US11394177

申请日：2006-03-29

申请人： Sterling Watson ,  Ady Levy ,  Chris Mack ,  Stanley Stokowski ,  Zain Saidin

发明人： Sterling Watson ,  Ady Levy ,  Chris Mack ,  Stanley Stokowski ,  Zain Saidin

IPC分类号： G03F1/00 ,  G03C5/00 ,  G06K9/00

CPC分类号： G03F1/84 ,  Y10S430/146

摘要： Disclosed are techniques for determining and correcting reticle variations using a reticle global variation map generated by comparing a set of measured reticle parameters to a set of reference reticle parameters. The measured reticle parameters are obtained by reticle inspection, and the variation map identifies reticle regions and associated levels of correction. In one embodiment, the variation data is communicated to a system which modifies the reticle by embedding scattering centers within the reticle at identified reticle regions, thereby improving the variations. In another embodiment the variation data is transferred to a wafer stepper or scanner which in turn modifies the conditions under which the reticle is used to manufacture wafers, thereby compensating for the variations and producing wafers that are according to design.

摘要翻译： 公开了用于使用通过将测量的标线参数的集合与一组参考掩模版参数进行比较而生成的光罩全局变化图来确定和校正光罩变化的技术。 通过掩模版检查获得测量的掩模版参数，并且变化图识别标线区域和相关联的校正水平。 在一个实施例中，将变化数据传送到通过在标定的标线区域内的散射中心嵌入来修改掩模版的系统，从而改善变化。 在另一个实施例中，变化数据被传送到晶片步进器或扫描器，该晶片步进器或扫描器又改变了使用掩模版制造晶片的条件，从而补偿了根据设计的变化和生产晶片。

公开(公告)号：US06486954B1

公开(公告)日：2002-11-26

申请号：US09654318

申请日：2000-09-01

申请人： Walter Dean Mieher ,  Ady Levy

发明人： Walter Dean Mieher ,  Ady Levy

IPC分类号： G01B1127

CPC分类号： G03F7/70633 ,  G01B11/002

摘要： An alignment mark comprising a first test zone and a second test zone for measuring the relative position between different layers of a semiconductor device. The alignment mark is used to determine the overlay error between layers of a semiconductor wafer while minimizing measurement inaccuracies caused by semiconductor manufacturing processes. The first test zone includes two sections, one in which test structures are formed on one layer and a second in which test structures are formed on a second layer. Each of these test structures is composed of smaller sub-structures. The second test zone includes two similar sections that are also composed of smaller sub-structures. The first and second test zones are configured so that the section of each test zone formed one layer is adjacent to the section of the other test zone that is formed on the other layer. By forming each of the periodic structures with smaller sized sub-structures, a more accurate measurement of any alignment error may be obtained. Another aspect of the present invention pertains to a method of utilizing the alignment mark so that an overlay measurement may be obtained.

摘要翻译： 对准标记包括第一测试区和第二测试区，用于测量半导体器件的不同层之间的相对位置。 对准标记用于确定半导体晶片的层之间的重叠误差，同时最小化由半导体制造工艺引起的测量不准确。 第一测试区包括两个部分，一个测试结构形成在一个层上，另一个测试结构形成在第二层上。 这些测试结构中的每一个都由较小的子结构组成。 第二测试区域包括两个类似的部分，它们也由较小的子结构组成。 第一和第二测试区被配置成使得形成一层的每个测试区的部分与形成在另一层上的另一测试区的部分相邻。 通过用较小尺寸的子结构形成每个周期性结构，可以获得任何对准误差的更准确的测量。 本发明的另一方面涉及一种利用对准标记以便可以获得覆盖测量的方法。

公开(公告)号：US07989729B1

公开(公告)日：2011-08-02

申请号：US12045724

申请日：2008-03-11

申请人： Guoheng Zhao ,  George H. Zapalac, Jr. ,  Samuel S. H. Ngai ,  Ady Levy ,  Mehdi Vaez-Iravani

发明人： Guoheng Zhao ,  George H. Zapalac, Jr. ,  Samuel S. H. Ngai ,  Ady Levy ,  Mehdi Vaez-Iravani

IPC分类号： G01J5/00 ,  G06K9/00

CPC分类号： G01J1/08 ,  G01J1/0466 ,  G01J2005/0077 ,  H01L31/186 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S136/29

摘要： An apparatus for both detecting and repairing a shunt defect in a solar cell substrate. A shunt detection module detects the shunt defect in the substrate, using at least one of lock-in thermography and current-voltage testing. A process diagnostic module determines whether the substrate should be passed without further processing by the apparatus, rejected without further processing by the apparatus, or repaired by the apparatus. A shunt repair module electrically isolates the shunt defect in the substrate. In this manner, a single apparatus can quickly check for shunts and make a determination as to whether the substrate is worth repairing. If it is worth repairing, then the apparatus can make the repairs to the substrate.

摘要翻译： 一种用于检测和修复太阳能电池基板中的分流缺陷的装置。 分流检测模块使用锁定热成像和电流 - 电压测试中的至少一种来检测衬底中的分流缺陷。 过程诊断模块确定衬底是否应该被通过而不被设备进一步处理，不经设备的进一步处理就被拒绝或被设备修复。 分流修复模块电隔离衬底中的分流缺陷。 以这种方式，单个装置可以快速检查分流并且确定基板是否值得修复。 如果值得修理，那么设备可以对基材进行维修。

公开(公告)号：US07733111B1

公开(公告)日：2010-06-08

申请号：US12045734

申请日：2008-03-11

申请人： Guoheng Zhao ,  Bin-Ming B. Tsai ,  Mehdi Vaez-Iravani ,  Ady Levy ,  George H. Zapalac, Jr. ,  Samuel S. H. Ngai

发明人： Guoheng Zhao ,  Bin-Ming B. Tsai ,  Mehdi Vaez-Iravani ,  Ady Levy ,  George H. Zapalac, Jr. ,  Samuel S. H. Ngai

IPC分类号： G01R31/26

CPC分类号： H02S50/10 ,  F21S8/006 ,  F21Y2115/10

摘要： An apparatus for inducing a current in a solar cell substrate. A substrate receiving surface receives the substrate, and an array of a plurality of individually addressable light sources illuminates the substrate in a sequenced manner. A sequencer controls the sequenced manner of illumination of the substrate by the array. A front side electrical contact makes electrical contact to a front side of the substrate, and a back side electrical contact makes electrical contact to a back side of the substrate. A meter is electrically connected to the front side electrical contact and the back side electrical contact, and senses the current induced in the substrate during the sequenced illumination of the substrate.

摘要翻译： 一种用于在太阳能电池基板中感应电流的装置。 衬底接收表面接收衬底，并且多个可单独寻址的光源的阵列以顺序的方式照射衬底。 定序器通过阵列控制衬底的照明顺序。 前侧电触点与基板的前侧电接触，并且背面电触点与基板的背面进行电接触。 仪表电连接到前侧电触头和后侧电触点，并感测在衬底的顺序照明期间在衬底中感应的电流。

公开(公告)号：US07385699B2

公开(公告)日：2008-06-10

申请号：US10785396

申请日：2004-02-23

申请人： Walter D. Mieher ,  Ady Levy ,  Boris Golovanesky ,  Michael Friedmann ,  Ian Smith ,  Michael E. Adel ,  Anatoly Fabrikant ,  Christopher F. Bevis ,  Mark Ghinovker

发明人： Walter D. Mieher ,  Ady Levy ,  Boris Golovanesky ,  Michael Friedmann ,  Ian Smith ,  Michael E. Adel ,  Anatoly Fabrikant ,  Christopher F. Bevis ,  Mark Ghinovker

IPC分类号： G01B11/00

CPC分类号： G03F9/7088 ,  G01N21/956 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7049 ,  G03F9/7084

摘要： Disclosed is a method for determining an overlay error between at least two layers in a multiple layer sample. An imaging optical system is used to measure a plurality of measured optical signals from a plurality of periodic targets on the sample. The targets each have a first structure in a first layer and a second structure in a second layer. There are predefined offsets between the first and second structures. A scatterometry overlay technique is then used to analyze the measured optical signals of the periodic targets and the predefined offsets of the first and second structures of the periodic targets to thereby determine an overlay error between the first and second structures of the periodic targets.

公开(公告)号：US07242477B2

公开(公告)日：2007-07-10

申请号：US10785430

申请日：2004-02-23

申请人： Walter D. Mieher ,  Ady Levy ,  Boris Golovanesky ,  Michael Friedmann ,  Ian Smith ,  Michael E. Adel ,  Mark Ghinovker ,  Christopher F. Bevis ,  Noam Knoll ,  Moshe Baruch

发明人： Walter D. Mieher ,  Ady Levy ,  Boris Golovanesky ,  Michael Friedmann ,  Ian Smith ,  Michael E. Adel ,  Mark Ghinovker ,  Christopher F. Bevis ,  Noam Knoll ,  Moshe Baruch

IPC分类号： G01B11/00

CPC分类号： G03F9/7088 ,  G01N21/956 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7049 ,  G03F9/7084

摘要： Disclosed is a method for determining an overlay error between at least two layers in a multiple layer sample. A sample having a plurality of periodic targets that each have a first structure in a first layer and a second structure in a second layer is provided. There are predefined offsets between the first and second structures. Using a scatterometry overlay metrology, scatterometry overlay data is obtained from a first set of the periodic targets based on one or more measured optical signals from the first target set on the sample. Using an imaging overlay metrology, imaging overlay data is obtained from a second set of the periodic targets based on one or more image(s) from the second target set on the sample.

摘要翻译： 公开了一种用于确定多层样品中至少两层之间的覆盖误差的方法。 提供具有多个周期性靶的样品，每个周期性靶在第一层中具有第一结构，在第二层中具有第二结构。 在第一和第二结构之间有预定义的偏移。 使用散射测绘重叠测量，基于来自样品上的第一目标组的一个或多个测量光信号，从第一组周期性目标获得散点测绘覆盖数据。 使用成像覆盖度量，基于来自样品上的第二目标集的一个或多个图像，从第二组周期性目标获得成像覆盖数据。

公开(公告)号：US20060234139A1

公开(公告)日：2006-10-19

申请号：US11394901

申请日：2006-03-31

申请人： Sterling Watson ,  Ady Levy ,  Chris Mack ,  Stanley Stokowski ,  Zain Saidin ,  Larry Zurbrick

发明人： Sterling Watson ,  Ady Levy ,  Chris Mack ,  Stanley Stokowski ,  Zain Saidin ,  Larry Zurbrick

IPC分类号： G03F1/00 ,  G03C5/00 ,  G06K9/00

CPC分类号： G06K9/2063 ,  G03F1/72 ,  G03F1/84 ,  Y10S430/146

摘要： Disclosed are systems and methods for modifying a reticle. In general, inspection results from a plurality of wafers or prediction results from a lithographic model are used to individually decrease the dose or any other optical property at specific locations of the reticle. In one embodiment, any suitable optical property of the reticle is modified by an optical beam, such as a femto-second laser, at specific locations on the reticle so as to widen the process window for such optical property. Examples of optical properties include dose, phase, illumination angle, and birefringence. Techniques for adjusting optical properties at specific locations on a reticle using an optical beam may be practiced for other purposes besides widening the process window.

摘要翻译： 公开了用于修改掩模版的系统和方法。 通常，来自多个晶片的检查结果或来自光刻模型的预测结果被用于单独地减小光罩的特定位置处的剂量或任何其它光学特性。 在一个实施例中，掩模版的任何合适的光学性质通过光束（例如毫微微秒级激光器）在掩模版上的特定位置处被修改，以便加宽用于这种光学性质的工艺窗口。 光学性质的实例包括剂量，相位，照射角度和双折射率。 使用光束在光罩上的特定位置处调整光学特性的技术可以用于除加宽工艺窗口之外的其它目的。

公开(公告)号：US08604447B2

公开(公告)日：2013-12-10

申请号：US13557047

申请日：2012-07-24

申请人： Scott Young ,  Guoheng Zhao ,  Ady Levy ,  Marco Guevremont ,  Neeraj Khanna

发明人： Scott Young ,  Guoheng Zhao ,  Ady Levy ,  Marco Guevremont ,  Neeraj Khanna

IPC分类号： G01N21/64

CPC分类号： G01N21/6489 ,  G01N21/9501 ,  H02S50/10

摘要： Methods and apparatus are presented to measure the photoluminescence of incoming wafers and extract parameters such as minority carrier life time, diffusion length, and defect density that may be used to predict final solar cell efficiency. In some examples, illumination light is supplied to a side of an as-cut silicon wafer and the induced luminescence measured from the same side and the opposite side of the wafer is used to determine an indication of the minority carrier lifetime. In another example, the luminescence induced by two instances of illumination light of different wavelength is used to determine an indication of the minority carrier lifetime. In another example, the spatial distribution of luminescence intensity over an area surrounding a focused illumination spot is used to determine an indication of the minority carrier lifetime. Other apparatus useful to passivate the surface of a wafer for inspection are also presented.

摘要翻译： 提出了测量进入晶片的光致发光的方法和装置，并提取可用于预测最终太阳能电池效率的参数，例如少数载流子寿命，扩散长度和缺陷密度。 在一些示例中，将照明光提供给切割硅晶片的一侧，并且使用从晶片的相同侧和相对侧测量的感应发光来确定少数载流子寿命的指示。 在另一示例中，由两个不同波长的照明光实例引起的发光用于确定少数载流子寿命的指示。 在另一示例中，使用聚焦照明点周围的区域上的发光强度的空间分布来确定少数载流子寿命的指示。 还提出了可用于钝化晶片表面以进行检查的其它装置。

公开(公告)号：US08436554B2

公开(公告)日：2013-05-07

申请号：US13081734

申请日：2011-04-07

申请人： Guoheng Zhao ,  Ady Levy ,  Alex Salnik ,  Mehdi Vaez-Iravani ,  Lena Nicolaides ,  Samuel S. H. Ngai

发明人： Guoheng Zhao ,  Ady Levy ,  Alex Salnik ,  Mehdi Vaez-Iravani ,  Lena Nicolaides ,  Samuel S. H. Ngai

IPC分类号： G05F1/00 ,  H05B37/02 ,  H05B39/04 ,  H05B41/36

CPC分类号： H05B33/0803

摘要： An apparatus for illuminating a target surface, the apparatus having a plurality of LED arrays, where each of the arrays has a plurality of individually addressable LEDs, and where at least one of the arrays is disposed at an angle of between about forty-five degrees and about ninety degrees relative to the target surface, where all of the arrays supply light into a light pipe, the light pipe having interior walls made of a reflective material, where light exiting the light pipe illuminates the target surface, and a controller for adjusting an intensity of the individually addressable light sources.

摘要翻译： 一种用于照射目标表面的装置，该装置具有多个LED阵列，其中每个阵列具有多个独立可寻址的LED，并且其中至少一个阵列以大约四十五度之间的角度设置 并且相对于目标表面大约九十度，其中所有的阵列将光提供到光管中，光管具有由反射材料制成的内壁，其中离开光管的光照射目标表面，以及用于调节的控制器 独立寻址光源的强度。