公开(公告)号：US20100207113A1

公开(公告)日：2010-08-19

申请号：US12681995

申请日：2008-10-09

申请人： Kenji Kasahara

发明人： Kenji Kasahara

IPC分类号： H01L51/52 ,  H01L33/00 ,  H01L51/10 ,  H01L33/62

CPC分类号： H01L29/458 ,  H01L21/0274 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/66742 ,  H01L29/78633 ,  H01L51/0023 ,  H01L51/0545 ,  H01L51/102

摘要： There is provided a thin film active element including a light-permeable substrate, a light-shielding source/drain electrode formed on the substrate, a light-permeable source/drain electrode formed on a plane surface to which the light-shielding source/drain electrode belongs, and disposed to have a gap interposed between the light-shielding source/drain electrode and the light-permeable source/drain electrode, a channel layer formed in the gap between the light-shielding source/drain electrode and the light-permeable source/drain electrode, and a gate electrode applying an electric field to the channel layer formed in the gap.

摘要翻译： 提供了一种薄膜有源元件，其包括透光性基板，形成在基板上的遮光源极/漏电极，形成在平面上的透光源极/漏电极，光屏蔽源极/漏极 并且被设置为在所述遮光源极/漏极和所述透光源极/漏极之间插入间隙，形成在所述遮光源极/漏极之间的间隙中的沟道层和所述透光源极/ 源极/漏极电极和向形成在间隙中的沟道层施加电场的栅电极。

公开(公告)号：US20100201453A1

公开(公告)日：2010-08-12

申请号：US12657907

申请日：2010-01-29

申请人： Kenji Kasahara

发明人： Kenji Kasahara

IPC分类号： H03B1/00

CPC分类号： H05K1/141 ,  H05K3/305 ,  H05K3/306 ,  H05K3/3442 ,  H05K3/3447 ,  H05K2201/049 ,  H05K2201/09036 ,  H05K2201/09181 ,  H05K2201/09845 ,  H05K2201/10075 ,  H05K2201/2036 ,  H05K2203/0195 ,  H05K2203/1446

摘要： An object of the invention is to provide an oscillator with a pedestal that facilitates soldering operations and offers a high level of productivity. A surface mount crystal oscillator with a pedestal comprises a crystal oscillator with lead wires led out from a bottom surface of a metallic base thereof; and a pedestal having a substantially rectangular outer shape in plan view, has insertion holes through which the lead wires pass, and is attached to a bottom surface of the crystal oscillator, and has mount terminals to be electrically connected to the lead wires formed on a bottom surface thereof. The configuration is such that the insertion holes are provided in four corner sections of the pedestal, in the four corner sections of the bottom surface of the pedestal where the insertion holes are formed there is provided a recess with an open outer periphery, and the lead wire is connected to a terminal electrode formed inside the recess, using solder.

摘要翻译： 本发明的目的是提供一种具有便于焊接操作的基座的振荡器，并提供高水平的生产率。 具有基座的表面贴装晶体振荡器包括：晶体振荡器，其引线从其金属基底的底面引出; 并且在平面图中具有大致矩形的外形的基座具有引线通过的插入孔，并且附接到晶体振子的底面，并且具有安装端子，电连接到形成在 其底面。 其结构是，在基座的四个角部设置插入孔，在形成有插入孔的基座的底面的四个角部设置有开口外周的凹部， 使用焊料将导线连接到形成在凹部内部的端子电极。

公开(公告)号：US20100155754A1

公开(公告)日：2010-06-24

申请号：US12223986

申请日：2007-02-13

申请人： Kenji Kasahara ,  Kazumasa Ueda ,  Yoshinobu Ono

发明人： Kenji Kasahara ,  Kazumasa Ueda ,  Yoshinobu Ono

IPC分类号： H01L33/58 ,  H01L21/30

CPC分类号： H01L33/025 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42

摘要： The present invention provides a group III nitride semiconductor light emitting device and a method for producing the same. The group III nitride semiconductor light emitting device comprises (a1), (b1) and (c1) in this order: (a1) an N electrode, (b1) a semiconductor multi-layer film, (c1) a transparent electric conductive oxide P electrode, wherein the semiconductor multi-layer film comprises an N-type semiconductor layer, light emitting layer, P-type semiconductor layer and high concentration N-type semiconductor layer having an n-type impurity concentration of 5×1018 cm−3 to 5×1020 cm−3 in this order, the N-type semiconductor layer is in contact with the N electrode, and the semiconductor multi-layer film has a convex.

摘要翻译： 本发明提供一种III族氮化物半导体发光器件及其制造方法。 III族氮化物半导体发光元件依次包括（a1），（b1）和（c1）：（a1）N电极，（b1）半导体多层膜，（c1）透明导电氧化物P 电极，其中所述半导体多层膜包括N型半导体层，发光层，P型半导体层和n型杂质浓度为5×10 18 cm -3〜5的高浓度N型半导体层 ×1020cm-3，N型半导体层与N电极接触，半导体多层膜具有凸面。

公开(公告)号：US07736917B2

公开(公告)日：2010-06-15

申请号：US11704206

申请日：2007-02-09

申请人： Akihisa Shimomura ,  Kenji Kasahara ,  Aiko Shiga ,  Hidekazu Miyairi ,  Koichiro Tanaka ,  Koji Dairiki

发明人： Akihisa Shimomura ,  Kenji Kasahara ,  Aiko Shiga ,  Hidekazu Miyairi ,  Koichiro Tanaka ,  Koji Dairiki

IPC分类号： H01L21/66

CPC分类号： H01L21/02686 ,  H01L21/02683 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/6675 ,  H01L29/78672 ,  Y10S438/949

摘要： A laser beam irradiation method that achieves uniform crystallization, even if a film thickness of an a-Si film or the like fluctuates, is provided. The present invention provides a laser beam irradiation method in which a non-single crystal semiconductor film is formed on a substrate having an insulating surface and a laser beam having a wavelength longer than 350 nm is irradiated to the non-single crystal semiconductor film, thus crystallizing the non-single crystal silicon film. The non-single crystal semiconductor film has a film thickness distribution within the surface of the substrate, and a differential coefficient of a laser beam absorptivity with respect to the film thickness of the non-single crystal semiconductor film is positive.

摘要翻译： 即使a-Si膜的膜厚等发生波动，也能够实现均匀结晶化的激光束照射方法。 本发明提供一种激光束照射方法，其中在具有绝缘面的基板上形成非单晶半导体膜，并且将具有波长超过350nm的激光束照射到非单晶半导体膜上，因此 使非单晶硅膜结晶。 非单晶半导体膜在基板的表面内具有膜厚分布，并且相对于非单晶半导体膜的膜厚度的激光束吸收率的微分系数为正。

公开(公告)号：US20100072464A1

公开(公告)日：2010-03-25

申请号：US12532976

申请日：2008-03-25

申请人： Kenji Kasahara

发明人： Kenji Kasahara

IPC分类号： H01L51/50 ,  H01L51/40 ,  H01L51/10 ,  H01L51/56

CPC分类号： H01L51/0001 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3274 ,  H01L51/0545 ,  H01L51/0558

摘要： The present invention is a method for manufacturing an organic thin-film transistor substrate including an organic thin-film transistor as a transistor element, and an object of the invention is to provide a manufacturing method capable of forming a bank in a smaller number of steps. The method for manufacturing the organic thin-film transistor substrate of the present invention, in which an organic thin-film transistor is formed in a first region on a substrate, a second region for forming a light-emitting element in abutment with the first region is included, and a bank part is formed in a peripheral part of the second region, is characterized by including: a first step of forming the organic thin-film transistor in the first region on the substrate and forming at least one of the gate insulation layer and the organic semiconductor layer included by this organic thin-film transistor as far as the second region, thereby forming, in the second region, a bank precursor layer composed of a laminated structure formed on the second region; and a second step of removing the regions of the bank precursor layer other than the peripheral part, thereby forming the bank part made of the remaining bank precursor layer.

摘要翻译： 本发明是一种制造包含有机薄膜晶体管作为晶体管元件的有机薄膜晶体管基板的方法，本发明的目的是提供一种制造方法，该方法能够以较少数量的步骤 。 本发明的有机薄膜晶体管基板的制造方法，其中有机薄膜晶体管形成在基板的第一区域中，第二区域用于形成与第一区域相邻的发光元件 并且在所述第二区域的周边部分中形成堤部，其特征在于包括：第一步骤，在所述基板上的所述第一区域中形成所述有机薄膜晶体管，并形成所述栅极绝缘体中的至少一个 层和由该有机薄膜晶体管包含的有机半导体层至第二区域，从而在第二区域中形成由形成在第二区域上的层叠结构体构成的堤岸前体层; 以及除了外围部分以外的堤岸前体层的区域的第二步骤，从而形成由剩余堤坝前体层制成的堤岸部分。

公开(公告)号：US07649423B2

公开(公告)日：2010-01-19

申请号：US11892862

申请日：2007-08-28

申请人： Kenji Kasahara

发明人： Kenji Kasahara

IPC分类号： H03B1/00

CPC分类号： H03L1/04

摘要： An oven controlled crystal oscillator capable of uniformly transmitting heat from the heat generator to improve the frequency-temperature characteristics. The oven controlled crystal oscillator includes a high thermal conductivity plate having high thermal conductivity and provided on one side of a substrate, where the crystal resonator is provided, in such a manner to contact the resistors, the transistor, the crystal resonator, and the temperature sensor. This structure can transmit heat from the resistors and the transistor as the heat generator to the crystal resonator and the temperature sensor rapidly with less heat loss to assure a uniform temperature inside the substrate, thereby improving the frequency-temperature characteristics.

摘要翻译： 能够均匀地传递来自发热体的热量以提高频率 - 温度特性的炉控晶体振荡器。 烤箱控制的晶体振荡器包括具有高热导率的高导热性板，并且设置在其上设置有晶体谐振器的基板的一侧，以接触电阻器，晶体管，晶体谐振器和温度 传感器。 该结构可以将来自电阻器和作为发热体的晶体管的热量以较少的热损失迅速地传递到晶体谐振器和温度传感器，以确保衬底内的均匀温度，从而提高频率 - 温度特性。

公开(公告)号：US20090212878A1

公开(公告)日：2009-08-27

申请号：US12378741

申请日：2009-02-19

申请人： Junichi Arai ,  Kenji Kasahara

发明人： Junichi Arai ,  Kenji Kasahara

IPC分类号： H03B5/30

CPC分类号： H03B5/04 ,  H03L1/04 ,  H05K1/0212 ,  H05K1/167 ,  H05K2201/10075 ,  H05K2201/10151 ,  H05K2201/10166

摘要： An oven-controlled crystal oscillator includes a circuit board, a crystal unit surface-mounted on the circuit board, and a temperature control circuit that maintains operating temperature of the crystal unit constant. The temperature control circuit includes a heating resistor, a power transistor that supplies power to a heating resistor, and a temperature sensitive resistor that detects temperature of the crystal unit. The heating resistor is formed, as a film resistor, on a surface of the circuit board in an area thereof in which the crystal unit is located. The temperature sensitive resistor is provided on the circuit board as a film resistor.

摘要翻译： 炉控晶体振荡器包括电路板，表面安装在电路板上的晶体单元和保持晶体单元的工作温度恒定的温度控制电路。 温度控制电路包括加热电阻器，向加热电阻器供电的功率晶体管和检测晶体单元的温度的温度敏感电阻器。 加热电阻器作为薄膜电阻器形成在其中晶体单元所在的区域中的电路板的表面上。 温度敏感电阻器作为薄膜电阻器设置在电路板上。

公开(公告)号：US07557412B2

公开(公告)日：2009-07-07

申请号：US11788322

申请日：2007-04-18

申请人： Kenji Kasahara ,  Shinji Maekawa ,  Hiroshi Shibata ,  Hidekazu Miyairi

发明人： Kenji Kasahara ,  Shinji Maekawa ,  Hiroshi Shibata ,  Hidekazu Miyairi

IPC分类号： H01L21/84

CPC分类号： H01L27/12 ,  H01L27/1277 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78675 ,  H01L29/78678

摘要： The sizes of crystal masses are made to be a uniform in a crystalline silicon film obtained by a thermal crystallization method in which a metal element is used. An amorphous silicon film to be crystallized is doped with a metal element that accelerates crystallization, and then irradiated with laser light (with an energy which is not large enough to melt the film and which is large enough to allow the metal element to diffuse in the solid silicon film) from the back side of a light-transmissive substrate. Thereafter, heat treatment is performed to obtain a crystalline silicon film. Thus crystal masses in the crystalline silicon film can have a uniform size and the problem of fluctuation between TFTs can be solved.

公开(公告)号：US20090114944A1

公开(公告)日：2009-05-07

申请号：US12294963

申请日：2007-03-30

申请人： Yoshinobu Ono ,  Kenji Kasahara ,  Kazumasa Ueda

发明人： Yoshinobu Ono ,  Kenji Kasahara ,  Kazumasa Ueda

IPC分类号： H01L33/00 ,  B44C1/22 ,  H01L21/306

CPC分类号： H01L21/30608 ,  H01L21/308 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L2933/0083 ,  Y10S977/856

摘要： The present invention provides a method for fine processing of a substrate, a method for fabrication of a substrate, and a light emitting device. In the method for fine processing of a substrate, after removing a single particle layer from the substrate having the single particle layer, a hole having an inner diameter smaller than a diameter of a particle and centering on a position on the substrate where each particle constructing the single particle layer has been placed is formed by etching. The method for fabrication of a substrateincludesthefollowingsteps (I) to (V) inthisorder: (I) forming the single particle layer by arranging the particles on the substrate; (II) reducing the diameter of each of the particles by etching the obtained substrate; (III) forming a thin film composed of a mask material on the obtained substrate; (IV) removing the particle from the substrate and forming a mask having a hole with an inner diameter equivalent to the diameter of the particle at the position where the individual particle has existed; and (V) forming a hole with a diameter equivalent to the inner diameter of the hole of the mask on the substrate below the hole of the mask by etching the substrate using the mask. The light emitting device is made of a nitride semiconductor and is formed with a fine hole on an entire surface or a partial region of a light extraction surface and/or an opposing surface.

摘要翻译： 本发明提供了一种基板的精细加工方法，基板的制造方法以及发光装置。 在基板精细加工方法中，在从具有单一颗粒层的基板除去单个颗粒层之后，具有内径小于颗粒直径的孔并且以基体上的每个颗粒构成的位置为中心 已经放置的单个颗粒层通过蚀刻形成。 本发明的制造方法包括以下步骤（I）至（V）：（I）通过将颗粒布置在基材上形成单个颗粒层; （II）通过蚀刻所获得的基板来减小每个颗粒的直径; （III）在所得基板上形成由掩模材料构成的薄膜; （IV）从基板上除去粒子，形成具有与粒子的存在直径相当的粒径的孔的掩模， 以及（V）通过使用掩模蚀刻基板，在掩模的孔下面的基板上形成具有与掩模的孔的内径相当的直径的孔。 发光器件由氮化物半导体制成，并且在光提取表面和/或相对表面的整个表面或部分区域上形成有细孔。

公开(公告)号：US20060134886A1

公开(公告)日：2006-06-22

申请号：US11354885

申请日：2006-02-16

申请人： Shunpei Yamazaki ,  Akihisa Shimomura ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba ,  Kenji Kasahara

发明人： Shunpei Yamazaki ,  Akihisa Shimomura ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba ,  Kenji Kasahara

IPC分类号： H01L21/78

CPC分类号： H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02686 ,  H01L23/544 ,  H01L27/1285 ,  H01L29/42384 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Island-like semiconductor films and markers are formed prior to laser irradiation. Markers are used as positional references so as not to perform laser irradiation all over the semiconductor within a substrate surface, but to perform a minimum crystallization on at least indispensable portion. Since the time required for laser crystallization can be reduced, it is possible to increase the substrate processing speed. By applying the above-described constitution to a conventional SLS method, a means for solving such problem in the conventional SLS method that the substrate processing efficiency is insufficient, is provided.