公开(公告)号：US09406740B2

公开(公告)日：2016-08-02

申请号：US14745703

申请日：2015-06-22

Applicant: International Business Machines Corporation

Inventor： Naigang Wang ,  Bucknell C. Webb

IPC: H01L21/31 ,  H01L49/02 ,  H01L21/768 ,  H01L23/522 ,  H01L21/311 ,  H01L21/3205

CPC classification number: H01L28/10 ,  H01L21/31 ,  H01L21/31111 ,  H01L21/3205 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A mechanism is provided for integrating an inductor into a semiconductor. A circular or other closed loop trench is formed in a substrate with sidewalls connected by a bottom surface in the substrate. A first insulator layer is deposited on the sidewalls of the trench so as to coat the sidewalls and the bottom surface. A conductor layer is deposited on the sidewalls and the bottom surface of the trench so as to coat the first insulator layer in the trench such that the conductor layer is on top of the first insulator layer in the trench. A first magnetic layer is deposited on the sidewalls and bottom surface of the trench so as to coat the first insulator layer in the trench without filling the trench. The first magnetic layer deposited on the sidewalls forms an inner closed magnetic loop and an outer closed magnetic loop within the trench.

公开(公告)号：US09312761B2

公开(公告)日：2016-04-12

申请号：US14178791

申请日：2014-02-12

Applicant: International Business Machines Corporation

Inventor： Paul S. Andry ,  Leland Chang ,  Evan G. Colgan ,  John U. Knickerbocker ,  Bucknell C. Webb ,  Robert Wisnieff

IPC: H03K3/00 ,  H02M3/156 ,  H02M1/08 ,  G06F1/26 ,  H05K1/00

CPC classification number: H02M3/156 ,  G05F3/02 ,  G06F1/26 ,  G06F1/263 ,  G06F1/266 ,  H01L23/5286 ,  H01L23/64 ,  H01L23/642 ,  H01L23/645 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L25/065 ,  H01L25/0657 ,  H01L25/16 ,  H01L25/18 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/1436 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19103 ,  H02M1/08 ,  H05K1/00 ,  Y10T29/49117 ,  H01L2224/11 ,  H01L2924/014

Abstract: A switching power supply in an integrated circuit, an integrated circuit comprising a switching power supply, and a method of assembling a switching power supply in an integrated circuit are disclosed. In one embodiment, the invention provides a three-dimensional switching power supply in an integrated circuit comprising a device layer. The switching power supply comprises three distinct strata arranged in series with the device layer, the three distinct strata including a switching layer including switching circuits, a capacitor layer including banks of capacitors, and an inductor layer including inductors. This switching power supply further comprises a multitude of connectors electrically and mechanically connecting together the device layer, the switching layer, the capacitor layer, and the inductor layer. The switching circuits, the capacitors and the inductors form a switching power supply for supplying power to the device layer.

Abstract translation: 公开了一种集成电路中的开关电源，包括开关电源的集成电路和集成电路中的开关电源的组装方法。 在一个实施例中，本发明提供了一种包括器件层的集成电路中的三维开关电源。 开关电源包括与器件层串联布置的三个不同的层，三个不同的层包括包括开关电路的开关层，包括电容器组的电容器层和包括电感器的电感器层。 该开关电源还包括将器件层，开关层，电容层和电感层电连接和机械连接在一起的大量连接器。 开关电路，电容器和电感器形成用于向器件层供电的开关电源。

公开(公告)号：US20160074323A1

公开(公告)日：2016-03-17

申请号：US14483278

申请日：2014-09-11

Applicant: International Business Machines Corporation

Inventor： S. Jay Chey ,  Bing Dang ,  John U. Knickerbocker ,  Kenneth F. Latzko ,  Joana Sofia Branquinho Teresa Maria ,  Lavanya Turlapati ,  Bucknell C. Webb ,  Steven L. Wright

IPC: A61K9/00 ,  A61M5/142 ,  A61M31/00 ,  A61M5/44

CPC classification number: A61K9/0097 ,  A61M31/002 ,  A61M2205/0244 ,  A61N1/0428 ,  A61N1/0444 ,  A61N1/0448

Abstract: Electromechanical substance delivery devices are provided which implement low-power electromechanical release mechanisms for controlled delivery of substances such as drugs and medication. For example, an electromechanical device includes a substrate having a cavity formed in a surface of the substrate, a membrane disposed on the surface of the substrate covering an opening of the cavity, and a seal disposed between the membrane and the surface of the substrate. The seal surrounds the opening of the cavity, and the seal and membrane are configured to enclose the cavity and retain a substance within the cavity. An electrode structure is configured to locally heat a portion of the membrane in response to a control voltage applied to the electrode structure, and create a stress that causes a rupture in the locally heated portion of the membrane to release the substance from within the cavity.

Abstract translation: 提供机电物质输送装置，其实施低功率机电释放机构，用于药物和药物等物质的受控输送。 例如，机电装置包括具有形成在基板的表面中的空腔的基板，设置在覆盖空腔的开口的基板的表面上的膜，以及设置在膜与基板的表面之间的密封件。 密封件围绕空腔的开口，并且密封件和膜被构造成封闭空腔并将物质保持在空腔内。 电极结构被配置为响应于施加到电极结构的控制电压而局部加热膜的一部分，并且产生导致膜的局部加热部分中的破裂从腔内释放物质的应力。

公开(公告)号：US09245850B2

公开(公告)日：2016-01-26

申请号：US14301395

申请日：2014-06-11

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jeffrey P. Gambino ,  Cameron E. Luce ,  Daniel S. Vanslette ,  Bucknell C. Webb

IPC: H01L23/48 ,  H01L23/522 ,  H01L21/768 ,  H01L23/538 ,  G06F17/50 ,  H01L23/00 ,  H01L27/02

CPC classification number: H01L23/5384 ,  G06F17/5045 ,  G06F17/5077 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/562 ,  H01L27/0207 ,  H01L2224/48091 ,  H01L2224/73257 ,  H01L2924/1305 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Disclosed herein are through silicon vias (TSVs) and contacts formed on a semiconductor material, methods of manufacturing, and design structures. The method includes forming a contact hole in a dielectric material formed on a substrate. The method further includes forming a via in the substrate and through the dielectric material. The method further includes lining the contact hole and the dielectric material with a metal liner using a deposition technique that will avoid formation of the liner in the viaformed in the substrate. The method further includes filling the contact hole and the via with a metal such that the metal is formed on the liner in the contact hole and directly on the substrate in the via.

Abstract translation: 本文公开了通过硅通孔（TSV）和形成在半导体材料上的触点，制造方法和设计结构。 该方法包括在形成在基板上的电介质材料中形成接触孔。 该方法还包括在衬底中并通过电介质材料形成通孔。 该方法还包括使用沉积技术用金属衬垫衬里接触孔和电介质材料，该沉积技术将避免衬底中通孔形成衬垫。 该方法还包括用金属填充接触孔和通孔，使得金属形成在接触孔中的衬垫上并且直接形成在通孔中的衬底上。

公开(公告)号：US09159778B2

公开(公告)日：2015-10-13

申请号：US14200503

申请日：2014-03-07

Applicant: International Business Machines Corporation

Inventor： Naigang Wang ,  Bucknell C. Webb

IPC: H01L21/00 ,  H01L49/02 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L28/10 ,  H01L21/31 ,  H01L21/31111 ,  H01L21/3205 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A mechanism is provided for integrating an inductor into a semiconductor. A circular or other closed loop trench is formed in a substrate with sidewalls connected by a bottom surface in the substrate. A first insulator layer is deposited on the sidewalls of the trench so as to coat the sidewalls and the bottom surface. A conductor layer is deposited on the sidewalls and the bottom surface of the trench so as to coat the first insulator layer in the trench such that the conductor layer is on top of the first insulator layer in the trench. A first magnetic layer is deposited on the sidewalls and bottom surface of the trench so as to coat the first insulator layer in the trench without filling the trench. The first magnetic layer deposited on the sidewalls forms an inner closed magnetic loop and an outer closed magnetic loop within the trench.

Abstract translation: 提供了一种用于将电感器集成到半导体中的机构。 圆形或其他闭环沟槽形成在衬底中，其侧壁通过衬底中的底表面连接。 第一绝缘体层沉积在沟槽的侧壁上以便涂覆侧壁和底表面。 导体层沉积在沟槽的侧壁和底表面上，以便涂覆沟槽中的第一绝缘体层，使得导体层位于沟槽中的第一绝缘体层之上。 第一磁性层沉积在沟槽的侧壁和底表面上，以便在沟槽中涂覆第一绝缘体层而不填充沟槽。 沉积在侧壁上的第一磁性层在沟槽内形成内闭合磁环和外封闭磁环。

公开(公告)号：US20150287773A1

公开(公告)日：2015-10-08

申请号：US14745713

申请日：2015-06-22

Applicant: International Business Machines Corporation

Inventor： Naigang Wang ,  Bucknell C. Webb

IPC: H01L49/02 ,  H01L21/311 ,  H01L21/31 ,  H01L21/768 ,  H01L21/3205

CPC classification number: H01L28/10 ,  H01L21/31 ,  H01L21/31111 ,  H01L21/3205 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A mechanism is provided for integrating an inductor into a semiconductor. A circular or other closed loop trench is formed in a substrate with sidewalls connected by a bottom surface in the substrate. A first insulator layer is deposited on the sidewalls of the trench so as to coat the sidewalls and the bottom surface. A conductor layer is deposited on the sidewalls and the bottom surface of the trench so as to coat the first insulator layer in the trench such that the conductor layer is on top of the first insulator layer in the trench. A first magnetic layer is deposited on the sidewalls and bottom surface of the trench so as to coat the first insulator layer in the trench without filling the trench. The first magnetic layer deposited on the sidewalls forms an inner closed magnetic loop and an outer closed magnetic loop within the trench.

Abstract translation: 提供了一种用于将电感器集成到半导体中的机构。 圆形或其他闭环沟槽形成在衬底中，其侧壁通过衬底中的底表面连接。 第一绝缘体层沉积在沟槽的侧壁上以便涂覆侧壁和底表面。 导体层沉积在沟槽的侧壁和底表面上，以便涂覆沟槽中的第一绝缘体层，使得导体层位于沟槽中的第一绝缘体层之上。 第一磁性层沉积在沟槽的侧壁和底表面上，以便在沟槽中涂覆第一绝缘体层而不填充沟槽。 沉积在侧壁上的第一磁性层在沟槽内形成内闭合磁环和外封闭磁环。

公开(公告)号：US20150270246A1

公开(公告)日：2015-09-24

申请号：US14221477

申请日：2014-03-21

Applicant: International Business Machines Corporation

Inventor： Daniel C. Edelstein ,  Michael A. Gaynes ,  Thomas M. Shaw ,  Bucknell C. Webb ,  Roy R. Yu

IPC: H01L25/065 ,  H01L21/768 ,  H01L23/29 ,  H01L23/538 ,  H01L23/31 ,  H01L25/00 ,  H01L21/56

CPC classification number: H01L23/293 ,  H01L23/291 ,  H01L23/3171 ,  H01L23/3192 ,  H01L2224/11

Abstract: A volumetric integrated circuit manufacturing method is provided. The method includes assembling a slab element of elongate chips, exposing a wiring layer between adjacent elongate chips of the slab element, metallizing a surface of the slab element at and around the exposed wiring layer to form a metallized surface electrically coupled to the wiring layer and passivating the metallized surface to hermetically seal the metallized surface.

Abstract translation: 提供了体积集成电路制造方法。 该方法包括组装细长芯片的平板元件，暴露板坯元件的相邻细长芯片之间的布线层，将暴露的布线层周围和周围的平板元件的表面金属化以形成电耦合到布线层的金属化表面，以及 钝化金属化表面以气密地密封金属化表面。

公开(公告)号：US11903734B2

公开(公告)日：2024-02-20

申请号：US16238143

申请日：2019-01-02

Applicant: International Business Machines Corporation

Inventor： Rajeev Narayanan ,  Katsuyuki Sakuma ,  John Knickerbocker ,  Bucknell C. Webb

IPC: A61B5/00 ,  G06F3/01 ,  H02S40/30

CPC classification number: A61B5/6826 ,  A61B5/6833 ,  G06F3/015 ,  H02S40/30

Abstract: Systems, computer-implemented methods and/or computer program products that facilitate wearable multiplatform sensing are provided. In one embodiment, a computer-implemented method comprises: measuring, by a system operatively coupled to a processor, wirelessly on a nail plate, physiological data of an entity; integrating and synchronizing, by the system, the physiological data with other physiological data from one or more devices to form integrated physiological data; and analyzing, by the system, the integrated physiological data to detect one or more disorders.

公开(公告)号：US11489219B2

公开(公告)日：2022-11-01

申请号：US16445185

申请日：2019-06-18

Applicant: International Business Machines Corporation

Inventor： John Collins ,  Devendra K. Sadana ,  Bucknell C. Webb ,  Paul S. Andry

IPC: H01M50/10 ,  H01M4/505 ,  H01M10/0565 ,  H01L23/58 ,  H01L23/00 ,  H01M50/116 ,  H01M50/172 ,  H01M50/531

Abstract: An energy storage device sits within a trench with electrically insulated sides within a substrate. Within the trench there is an anode, an electrolyte disposed on the anode, and a cathode structure disposed on the electrolyte. Variations of an electrically conductive contact are disposed on and in electrical contact with the cathode structure. At least part of the conductive contact is disposed within the trench and the conductive contact partially seals the anode, electrolyte, and cathode structure within the trench. Conductive and/or non-conductive adhesives are used to complete the seal thereby enabling full working electrochemical devices where singulation of the devices from the substrate enables high control of device dimensionality and footprint.

公开(公告)号：US11183725B2

公开(公告)日：2021-11-23

申请号：US16732729

申请日：2020-01-02

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Paul S. Andry ,  Paul A. Lauro ,  Jae-Woong Nah ,  Adinath Narasgond ,  Robert J. Polastre ,  Bucknell C. Webb

IPC: H01M50/183 ,  H01M4/04 ,  H01M4/66 ,  H01M4/62 ,  H01M4/50 ,  H01M4/02 ,  H01M50/411

Abstract: A method for forming a battery structure includes texturing an anode packaging material to form a first textured surface, depositing one or more metal layers including an anode metal on the first textured surface and forming a separator on the anode metal. It also includes texturing a cathode packaging material to form a second textured surface, depositing a cathode metal on the second textured surface, and forming an electrolyte binder paste on the cathode metal, which contacts the separator with any gap being filled with electrolyte.