公开(公告)号：US08853529B2

公开(公告)日：2014-10-07

申请号：US13568121

申请日：2012-08-06

申请人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Bahman Hekmatshoartabari ,  Ning Li ,  Devendra K. Sadana ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Bahman Hekmatshoartabari ,  Ning Li ,  Devendra K. Sadana ,  Davood Shahrjerdi

IPC分类号： H01L31/00 ,  H01L31/0687 ,  H01L31/0735 ,  H01L31/0304 ,  H01L31/18 ,  H01L21/02

CPC分类号： H01L31/06875 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02664 ,  H01L31/03042 ,  H01L31/0735 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： Solar cell structures include stacked layers in reverse order on a germanium substrate wherein a n++ (In)GaAs buffer layer plays dual roles as buffer and contact layers in the inverted structures. The absorbing layers employed in such exemplary structures are III-V layers such as (In)GaAs. Controlled spalling may be employed as part of the fabrication process for the solar cell structures, which may be single or multi-junction. The requirement for etching a buffer layer is eliminated, thereby facilitating the manufacturing process of devices using the disclosed structures.

摘要翻译： 太阳能电池结构在锗衬底上以相反的顺序包括堆叠层，其中n ++（In）GaAs缓冲层在倒置结构中起缓冲层和接触层的双重作用。 在这种示例性结构中采用的吸收层是III-V层，例如（In）GaAs。 受控的剥落可以用作太阳能电池结构的制造过程的一部分，其可以是单结或多结。 消除了蚀刻缓冲层的要求，从而便于使用公开的结构的器件的制造过程。

公开(公告)号：US08841544B2

公开(公告)日：2014-09-23

申请号：US13611047

申请日：2012-09-12

申请人： Augustin J. Hong ,  Jeehwan Kim ,  Jae-Woong Nah ,  Devendra K. Sadana

发明人： Augustin J. Hong ,  Jeehwan Kim ,  Jae-Woong Nah ,  Devendra K. Sadana

IPC分类号： H01L31/00

CPC分类号： H01L31/02366 ,  C03C15/00 ,  C03C2218/34 ,  Y02E10/50

摘要： A substrate for photovoltaic device includes a textured surface formed from silicon-based material. The textured surface includes a plurality of cones uniformly distributed across the textured surface. The uniformly distributed cones are configured by etching from a top surface of the substrate using a self-assembled solder dot mask evaporated on the substrate prior to etching. The cones are uniformly distributed as a result of gettering a process chamber prior to forming the solder dot mask. The cones have a height/width ratio between about 1 to about 4, and the cones have a density between 108 to 109 cones/cm2.

摘要翻译： 用于光伏器件的衬底包括由硅基材料形成的纹理表面。 纹理表面包括均匀分布在纹理化表面上的多个锥体。 均匀分布的锥体通过在蚀刻之前使用在衬底上蒸发的自组装焊点掩模从衬底的顶表面进行蚀刻而配置。 由于在形成焊点掩模之前吸收处理室，锥体均匀分布。 锥体具有约1至约4之间的高度/宽度比，并且锥体具有在108至109锥/ cm 2之间的密度。

公开(公告)号：US08822317B2

公开(公告)日：2014-09-02

申请号：US13603739

申请日：2012-09-05

申请人： Cheng-Wei Cheng ,  Augustin J. Hong ,  Jeehwan Kim ,  Devendra K. Sadana ,  Kuen-Ting Shiu

发明人： Cheng-Wei Cheng ,  Augustin J. Hong ,  Jeehwan Kim ,  Devendra K. Sadana ,  Kuen-Ting Shiu

IPC分类号： H01L21/336

CPC分类号： H01L21/2258 ,  H01L21/246 ,  H01L21/28575 ,  H01L29/41775 ,  H01L29/452 ,  H01L29/517 ,  H01L29/66522

摘要： A metal oxide semiconductor field effect transistor and method for forming the same include exposing portions on a substrate adjacent to a gate stack, forming a dopant layer over the gate stack and in contact with the substrate in the portions exposed and annealing the dopant layer to drive dopants into the substrate to form self-aligned dopant regions in the substrate. The dopant layer is removed. A metal containing layer is deposited over the gate stack and in contact with the substrate in the exposed portions. The metal containing layer is annealed to drive metal into the substrate to form self-aligned contact regions in a metal alloy formed in the substrate within the dopant regions. The metal layer is then removed.

摘要翻译： 金属氧化物半导体场效应晶体管及其形成方法包括在与栅极叠层相邻的衬底上的曝光部分，在栅极堆叠上形成掺杂剂层，并在暴露并退火掺杂剂层驱动的部分中与衬底接触 掺杂到衬底中以在衬底中形成自对准掺杂剂区域。 去除掺杂剂层。 在栅极叠层上沉积含金属层，并在暴露部分与衬底接触。 对含金属层进行退火以将金属驱动到衬底中，以在掺杂区域内的衬底中形成的金属合金中形成自对准接触区域。 然后去除金属层。

公开(公告)号：US08748296B2

公开(公告)日：2014-06-10

申请号：US13172793

申请日：2011-06-29

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Devendra K. Sadana ,  Davood Shahrjerdi ,  Norma E. Sosa Cortes

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Devendra K. Sadana ,  Davood Shahrjerdi ,  Norma E. Sosa Cortes

IPC分类号： H01L21/00

CPC分类号： H01L21/304 ,  C03C15/00 ,  C03C2218/34 ,  H01L31/1892

摘要： A method to minimize edge-related substrate breakage during spalling using an edge-exclusion region where the stressor layer is either non-present (excluded either during deposition or removed afterwards) or present but significantly non-adhered to the substrate surface in the exclusion region is provided. In one embodiment, the method includes forming an edge exclusion material on an upper surface and near an edge of a base substrate. A stressor layer is then formed on exposed portions of the upper surface of the base substrate and atop the edge exclusion material, A portion of the base substrate that is located beneath the stressor layer and which is not covered by the edge exclusion material is then spalled.

摘要翻译： 使用边缘排除区域（其中应力层不存在（在沉积期间排除或随后除去）或存在但显着不附着于排除区域中的基底表面的边缘排除区域来最小化边缘相关底物断裂的方法 被提供。 在一个实施例中，该方法包括在基底基板的上表面和边缘附近形成边缘排除材料。 然后在基底基板的上表面和边缘排除材料的顶部的暴露部分上形成应力层，然后剥离位于应力层下方并且不被边缘排除材料覆盖的基底基板的一部分 。

公开(公告)号：US08735210B2

公开(公告)日：2014-05-27

申请号：US13535812

申请日：2012-06-28

申请人： Keith E. Fogel ,  Augustin J. Hong ,  Jeehwan Kim ,  Devendra K. Sadana

发明人： Keith E. Fogel ,  Augustin J. Hong ,  Jeehwan Kim ,  Devendra K. Sadana

IPC分类号： H01L21/00

CPC分类号： H01L31/022425 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/1864 ,  Y02E10/548 ,  Y02P70/521

摘要： A method for forming a photovoltaic device includes depositing one or more layers of a photovoltaic stack on a substrate by employing a high deposition rate plasma enhanced chemical vapor deposition (HDR PECVD) process. Contacts are formed on the photovoltaic stack to provide a photovoltaic cell. Annealing is performed on the photovoltaic cell at a temperature and duration configured to improve overall performance.

摘要翻译： 一种用于形成光伏器件的方法包括通过采用高沉积速率等离子体增强化学气相沉积（HDR PECVD）工艺在衬底上沉积一层或多层光伏堆叠。 在光伏堆叠上形成触点以提供光伏电池。 在光伏电池上进行退火，温度和持续时间被配置为提高整体性能。

公开(公告)号：US08709957B2

公开(公告)日：2014-04-29

申请号：US13481062

申请日：2012-05-25

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ibrahim Alhomoudi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ibrahim Alhomoudi

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/304 ,  B81C99/008 ,  H01L21/02002

摘要： A method for spalling local areas of a base substrate utilizing at least one stressor layer portion which is located on a portion, but not all, of an uppermost surface of a base substrate. The method includes providing a base substrate having a uniform thickness and a planar uppermost surface spanning across an entirety of the base substrate. At least one stressor layer portion having a shape is formed on at least a portion, but not all, of the uppermost surface of the base substrate. Spalling is performed which removes a material layer portion from the base substrate and provides a remaining base substrate portion. The material layer portion has the shape of the at least one stressor layer portion, while the remaining base substrate portion has at least one opening located therein which correlates to the shape of the at least one stressor layer.

摘要翻译： 利用位于基底的最上表面的一部分但不是全部的至少一个应力层部分剥离基底基板的局部区域的方法。 该方法包括提供具有均匀厚度的基底基底和跨越整个基底基底的平面最上表面。 至少一个具有形状的应力层部分形成在基底基板的最上表面的至少一部分但不是全部。 进行剥离，其从基底基板移除材料层部分并提供剩余的基底部分。 材料层部分具有至少一个应力层部分的形状，而剩余的基底部分具有位于其中的至少一个与至少一个应力层的形状相关的开口。

公开(公告)号：US08709914B2

公开(公告)日：2014-04-29

申请号：US13159893

申请日：2011-06-14

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Devendra K. Sadana

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Devendra K. Sadana

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/304 ,  H01L31/1896 ,  Y02E10/50 ,  Y02P80/30

摘要： A method of controlled layer transfer is provided. The method includes providing a stressor layer to a base substrate. The stressor layer has a stressor layer portion located atop an upper surface of the base substrate and a self-pinning stressor layer portion located adjacent each sidewall edge of the base substrate. A spalling inhibitor is then applied atop the stressor layer portion of the base substrate, and thereafter the self-pinning stressor layer portion of the stressor layer is decoupled from the stressor layer portion. A portion of the base substrate that is located beneath the stressor layer portion is then spalled from the original base substrate. The spalling includes displacing the spalling inhibitor from atop the stressor layer portion. After spalling, the stressor layer portion is removed from atop a spalled portion of the base substrate.

摘要翻译： 提供了一种受控层转移的方法。 该方法包括向基底基底提供应力层。 应力层具有位于基底基板的上表面顶部的应力层，以及位于基底基板的每个侧壁边缘附近的自锁紧应力层。 然后将剥落抑制剂施加在基底衬底的应力层部分的顶部，然后将应力层的自锁定应力层部分与应力层部分分离。 位于应力层部分之下的基底部分的一部分然后从原始基底剥离。 剥落包括从应力层部分顶部置换剥落抑制剂。 剥落后，从基底基板的剥离部的顶部除去应力层。

公开(公告)号：US08679943B2

公开(公告)日：2014-03-25

申请号：US13215738

申请日：2011-08-23

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Xiao Hu Liu ,  Devendra K. Sadana

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Xiao Hu Liu ,  Devendra K. Sadana

IPC分类号： H01L21/30

CPC分类号： H01L21/30 ,  H01L31/1892 ,  Y02E10/50

摘要： A spalling method is provided that includes depositing a stressor layer on surface of a base substrate, and contacting the stressor layer with a planar transfer. The planar transfer surface is then traversed along a plane that is parallel to and having a vertical offset from the upper surface of the base substrate. The planar transfer surface is traversed in a direction from a first edge of the base substrate to an opposing second edge of the base substrate to cleave the base substrate and transfer a spalled portion of the base substrate to the planar transfer surface. The vertical offset between the plane along which the planar transfer surface is traversed and the upper surface of the base substrate is a fixed distance. The fixed distance of the vertical offset provides a uniform spalling force. A spalling method is also provided that includes a transfer roller.

摘要翻译： 提供了一种剥落方法，其包括在基底表面上沉积应力层，并使应力层与平面转移接触。 然后，平面转移表面沿着平行于并且具有从基底基板的上表面垂直偏移的平面穿过。 平面转移表面在从基底基板的第一边缘到基底基板的相对的第二边缘的方向上穿过，以将基底基板切割并将基底基板的剥离部分转印到平面转印表面。 平面转移面沿着平面移动的平面与基底基板的上表面之间的垂直偏移是固定的距离。 垂直偏移的固定距离提供均匀的剥落力。 还提供了包括转印辊的剥落方法。

公开(公告)号：US20140060627A1

公开(公告)日：2014-03-06

申请号：US13603389

申请日：2012-09-04

申请人： Wilfried E. Haensch ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Wilfried E. Haensch ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/04

CPC分类号： H01L31/182 ,  H01L31/02167 ,  H01L31/022433 ,  H01L31/068 ,  H01L31/1824 ,  Y02E10/547

摘要： Photovoltaic structures are provided with field-effect inversion/accumulation layers as emitter layers induced by work-function differences between gate conductor layers and substrates thereof. Localized contact regions are in electrical communication with the gate conductors of such structures for repelling minority carriers. Such localized contact regions may include doped crystalline or polycrystalline silicon regions between the gate conductor and silicon absorption layers. Fabrication of the structures can be conducted without alignment between metal contacts and the localized contact regions or high temperature processing.

摘要翻译： 光伏结构设置有作为由栅极导体层和其基板之间的功函数差异引起的发射极层的场效应反演/累积层。 局部接触区域与这种结构的栅极导体电连通以排斥少数载流子。 这种局部接触区域可以包括在栅极导体和硅吸收层之间的掺杂晶体或多晶硅区域。 可以在金属触点与局部接触区域或高温处理之间进行结构的制造。

公开(公告)号：US08658444B2

公开(公告)日：2014-02-25

申请号：US13472584

申请日：2012-05-16

申请人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L21/00

CPC分类号： H01L27/1218 ,  H01L21/304 ,  H01L21/6835 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/1266 ,  H01L2221/68368

摘要： A high resolution active matrix backplane is fabricated using techniques applicable to flexible substrates. A backplane layer including active semiconductor devices is formed on a semiconductor-on-insulator substrate. The backplane layer is spalled from the substrate. A frontplane layer including passive devices such as LCDs, OLEDs, photosensitive materials, or piezo-electric materials is formed over the backplane layer to form an active matrix structure. The active matrix structure may be fabricated to allow bottom emission and provide mechanical flexibility.

摘要翻译： 使用适用于柔性基板的技术制造高分辨率有源矩阵背板。 包含有源半导体器件的背板层形成在绝缘体上半导体衬底上。 背板层从基板剥离。 包括诸如LCD，OLED，感光材料或压电材料的无源器件的前端层形成在背板层上以形成有源矩阵结构。 可以制造有源矩阵结构以允许底部发射并提供机械灵活性。