公开(公告)号：US11342159B2

公开(公告)日：2022-05-24

申请号：US16888613

申请日：2018-11-28

Applicant: Lam Research Corporation

Inventor： Maolin Long ,  Yuhou Wang ,  Ying Wu ,  Alex Paterson

IPC: H01J37/32 ,  H03K4/92

Abstract: A system and method for generating a radio frequency (RF) waveform are described. The method includes defining a train of on-off pulses separated by an off state having no on-off pulses. The method further includes applying a multi-level pulse waveform that adjusts a magnitude of each of the on-off pulses to generate an RF waveform. The method includes sending the RF waveform to an electrode.

公开(公告)号：US20210358757A1

公开(公告)日：2021-11-18

申请号：US17298931

申请日：2019-11-22

Applicant: Lam Research Corporation

Inventor： Juline Shoeb ,  Alexander Miller Paterson ,  Ying Wu

IPC: H01L21/3065 ,  H01J37/32 ,  H01J37/305

Abstract: Systems and methods for etching different features in a substantially equal manner are described. One of the methods includes applying a low frequency bias signal during a low TCP state and applying a high frequency bias signal during a high TCP state. The application of the low frequency bias signal during the low TCP state facilitates generation of hot neutrals, which are used to increase an etch rate of etching dense features compared to an etch rate for etching isolation features. The application of the high frequency bias signal during the high TCP state facilitates generation of ions to increase an etch rate of etching the isolation features compared to an etch rate of etching the dense features. After applying the low frequency bias signal during the low TCP state and the high frequency bias signal during the high TCP state, the isolation and dense features are etched similarly.

公开(公告)号：US11049693B2

公开(公告)日：2021-06-29

申请号：US16533150

申请日：2019-08-06

Applicant: Lam Research Corporation

Inventor： Juline Shoeb ,  Ying Wu ,  Alex Paterson

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/683 ,  H01L21/67

Abstract: Systems and methods for increasing peak ion energy with a low angular spread of ions are described. In one of the systems, multiple radio frequency (RF) generators that are coupled to an upper electrode associated with a plasma chamber are operated in two different states, such as two different frequency levels, for pulsing of the RF generators. The pulsing of the RF generators facilitates a transfer of ion energy during one of the states to another one of the states for increasing ion energy during the other state to further increase a rate of processing a substrate.

公开(公告)号：US10395894B2

公开(公告)日：2019-08-27

申请号：US15693134

申请日：2017-08-31

Applicant: Lam Research Corporation

Inventor： Juline Shoeb ,  Ying Wu ,  Alex Paterson

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/3065

Abstract: Systems and methods for increasing peak ion energy with a low angular spread of ions are described. In one of the systems, multiple radio frequency (RF) generators that are coupled to an upper electrode associated with a plasma chamber are operated in two different states, such as two different frequency levels, for pulsing of the RF generators. The pulsing of the RF generators facilitates a transfer of ion energy during one of the states to another one of the states for increasing ion energy during the other state to further increase a rate of processing a substrate.

公开(公告)号：US20190148114A1

公开(公告)日：2019-05-16

申请号：US15814325

申请日：2017-11-15

Applicant: Lam Research Corporation

Inventor： Ying Wu ,  Alex Paterson ,  John Drewery ,  Arthur Sato

IPC: H01J37/32 ,  H03H11/28 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01J37/32183 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32963 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/68757 ,  H03H11/28

Abstract: Systems and methods for applying frequency and match tuning in a non-overlapping manner are described. For example, a radio frequency (RF) generator is tuned for a time interval and an impedance match is not tuned for the time interval. The impedance match is tuned before or after the RF generator is tuned. Such a non-overlap in the tuning of the RF generator and the impedance match facilitates a reduction in reflected power during a pulse without the tuning of the RF generator interfering with the tuning of the impedance match.

公开(公告)号：US10242845B2

公开(公告)日：2019-03-26

申请号：US15408326

申请日：2017-01-17

Applicant: Lam Research Corporation

Inventor： Zhongkui Tan ,  Yiting Zhang ,  Qian Fu ,  Qing Xu ,  Ying Wu ,  Saravanapriyan Sriraman ,  Alex Paterson

IPC: C23C16/02 ,  H01L21/3213 ,  H01J37/32 ,  H01L21/311 ,  H05H1/46

Abstract: A substrate is positioned on a substrate support structure within a plasma processing volume of an inductively coupled plasma processing chamber. A first radiofrequency signal is supplied from a first radiofrequency signal generator to a coil disposed outside of the plasma processing volume to generate a plasma in exposure to the substrate. A second radiofrequency signal is supplied from a second radiofrequency signal generator to an electrode within the substrate support structure. The first and second radiofrequency signal generators are controlled independent of each other. The second radiofrequency signal has a frequency greater than or equal to about 27 megaHertz. The second radiofrequency signal generates supplemental plasma density at a level of the substrate within the plasma processing volume while generating a bias voltage of less than about 200 volts at the level of the substrate.

公开(公告)号：US10224183B1

公开(公告)日：2019-03-05

申请号：US15928039

申请日：2018-03-21

Applicant: Lam Research Corporation

Inventor： Juline Shoeb ,  Alex Paterson ,  Ying Wu

IPC: H01J7/24 ,  H05B31/26 ,  H01J37/32

Abstract: Systems and methods for multi-level pulsing of a parameter and multi-level pulsing of a frequency of a radio frequency (RF) signal are described. The parameter is pulsed from a low level to a high level while the frequency is pulsed from a low level to a high level. The parameter and the frequency are simultaneously pulsed to increase a rate of processing a wafer, to increase mask selectivity, and to reduce angular spread of ions within a plasma chamber.

公开(公告)号：US10177003B2

公开(公告)日：2019-01-08

申请号：US15615768

申请日：2017-06-06

Applicant: Lam Research Corporation

Inventor： Zhongkui Tan ,  Qian Fu ,  Ying Wu ,  Qing Xu ,  Hua Xiang

IPC: H01L21/3065 ,  H01J37/00 ,  H01L21/308 ,  H01L21/311

Abstract: A substrate is disposed on a substrate holder within a process module. The substrate includes a mask material overlying a target material with at least one portion of the target material exposed through an opening in the mask material. A bi-modal process gas composition is supplied to a plasma generation region overlying the substrate. For a first period of time, a first radiofrequency power is applied to the bi-modal process gas composition to generate a plasma to cause etching-dominant effects on the substrate. For a second period of time, after completion of the first period of time, a second radiofrequency power is applied to the bi-modal process gas composition to generate the plasma to cause deposition-dominant effects on the substrate. The first and second radiofrequency powers are applied in an alternating and successive manner for an overall period of time to remove a required amount of exposed target material.

公开(公告)号：US20180294566A1

公开(公告)日：2018-10-11

申请号：US15942629

申请日：2018-04-02

Applicant: Lam Research Corporation

Inventor： Yuhou Wang ,  Arthur H. Sato ,  Ying Wu ,  Alexander Miller Paterson

IPC: H01Q5/335

Abstract: A radio frequency (RF) matching circuit control system includes an RF matching circuit including a plurality of tunable components. The RF matching circuit is configured to receive an input signal including at least two pulsing levels from an RF generator, provide an output signal to a load based on the input signal, and match an impedance associated with the input signal to impedances of the load. A controller is configured to determine respective impedances of the load for the at least two pulsing levels of the input signal and adjust operating parameters of the plurality of tunable components to align a frequency tuning range of the RF matching circuit with the respective impedances of the load for the at least two pulsing levels to match the impedance associated with the input signal to the respective impedances.

公开(公告)号：US20180090334A1

公开(公告)日：2018-03-29

申请号：US15819696

申请日：2017-11-21

Applicant: Lam Research Corporation

Inventor： Zhongkui Tan ,  Qian Fu ,  Ying Wu ,  Qing Xu ,  John Drewery

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/308 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/30655 ,  H01L21/308 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/67069 ,  Y02P80/30

Abstract: A substrate is disposed on a substrate holder within a process module. The substrate includes a mask material overlying a target material with at least one portion of the target material exposed through an opening in the mask material. A plasma is generated in exposure to the substrate. For a first duration, a bias voltage is applied at the substrate holder at a first bias voltage setting corresponding to a high bias voltage level. For a second duration, after completion of the first duration, a bias voltage is applied at the substrate holder at a second bias voltage setting corresponding to a low bias voltage level. The second bias voltage setting is greater than 0 V. The first and second durations are repeated in an alternating and successive manner for an overall period of time necessary to remove a required amount of the target material exposed on the substrate.