公开(公告)号：US06573117B2

公开(公告)日：2003-06-03

申请号：US10053570

申请日：2002-01-24

申请人： Toshiya Uemura ,  Naoki Shibata ,  Shizuyo Noiri ,  Masanori Murakami ,  Yasuo Koide ,  Jun Ito

发明人： Toshiya Uemura ,  Naoki Shibata ,  Shizuyo Noiri ,  Masanori Murakami ,  Yasuo Koide ,  Jun Ito

IPC分类号： H01L2100

CPC分类号： H01L33/42 ,  H01L33/0095 ,  H01L33/32

摘要： A layer comprising cobalt (Co) is formed on a p+ layer by vapor deposition, and a layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a light-transmitting electrode. The light-transmitting electrode therefore has reduced contact resistance and improved light transmission properties, and gives a light-emitting pattern which is stable over a long time. Furthermore, since cobalt (Co) is an element having a large work function, satisfactory ohmic properties are obtained.

公开(公告)号：USD471340S1

公开(公告)日：2003-03-04

申请号：US29154000

申请日：2002-01-15

申请人： Naoki Shibata ,  Takafumi Nakatani ,  Masafumi Abe

设计人： Naoki Shibata ,  Takafumi Nakatani ,  Masafumi Abe

公开(公告)号：US06500689B2

公开(公告)日：2002-12-31

申请号：US09819622

申请日：2001-03-29

申请人： Toshiya Uemura ,  Naoki Shibata ,  Shizuyo Noiri ,  Masanori Murakami ,  Yasuo Koide ,  Jun Ito

发明人： Toshiya Uemura ,  Naoki Shibata ,  Shizuyo Noiri ,  Masanori Murakami ,  Yasuo Koide ,  Jun Ito

IPC分类号： H01L2128

CPC分类号： H01L33/42 ,  H01L33/0095 ,  H01L33/32

摘要： A layer comprising cobalt (Co) is formed on a p+ layer by vapor deposition, and a layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a light-transmitting electrode. The light-transmitting electrode therefore has reduced contact resistance and improved light transmission properties, and gives a light-emitting pattern which is stable over a long time. Furthermore, since cobalt (Co) is an element having a large work function, satisfactory ohmic properties are obtained.

摘要翻译： 通过气相沉积在p +层上形成包含钴（Co）的层，并且在其上形成包含金（Au）的层。 通过热处理将两层合金化以形成透光电极。 因此，透光电极具有降低的接触电阻和改善的透光性，并且给出了长时间稳定的发光图案。 此外，由于钴（Co）是具有大功函数的元素，因此获得令人满意的欧姆特性。

公开(公告)号：US06335217B1

公开(公告)日：2002-01-01

申请号：US09525425

申请日：2000-03-14

申请人： Toshiaki Chiyo ,  Shizuyo Noiri ,  Naoki Shibata ,  Jun Ito

发明人： Toshiaki Chiyo ,  Shizuyo Noiri ,  Naoki Shibata ,  Jun Ito

IPC分类号： H01L2100

CPC分类号： H01L33/12 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/10 ,  H01L33/405 ,  H01L33/46

摘要： A GaN type semiconductor layer having a structure is provided which incorporates a substrate having surface which is opposite to a GaN type semiconductor layer and which is made of Ti.

摘要翻译： 提供具有结构的GaN型半导体层，其具有与GaN类半导体层相对的表面的由Ti构成的衬底。

公开(公告)号：US06265726B1

公开(公告)日：2001-07-24

申请号：US09379621

申请日：1999-08-24

申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

IPC分类号： H01L2906

CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40

摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1−x3)y3In1−y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1−x2)y2In1−y2N emission layer (5), and a Mg-doped (Alx1Ga1−x1)y1In1−y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 &mgr;m thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 &mgr;m thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 &mgr;m thickness. The p-layer 6 has about a 1.0 &mgr;m thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.

公开(公告)号：US6121127A

公开(公告)日：2000-09-19

申请号：US440860

申请日：1999-11-16

申请人： Naoki Shibata ,  Junichi Umezaki ,  Makoto Asai ,  Toshiya Uemura ,  Takahiro Kozawa ,  Tomohiko Mori ,  Takeshi Ohwaki

发明人： Naoki Shibata ,  Junichi Umezaki ,  Makoto Asai ,  Toshiya Uemura ,  Takahiro Kozawa ,  Tomohiko Mori ,  Takeshi Ohwaki

IPC分类号： H01L21/285 ,  H01L29/45 ,  H01L33/32 ,  H01L33/40 ,  H01L21/28

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L29/452 ,  H01L33/32

摘要： An electrode for a Group III nitride compound semiconductor having p-type conduction that has a double layer structure. The first metal electrode layer comprising, for example, nickel (Ni) and the second metal electrode layer comprising, for example, gold (Au). The Ni layer is formed on the Group III nitride compound semiconductor having p-type conduction, and the Au layer is formed on the Ni layer. Heat treatment changes or reverses the distribution of the elements Ni and Au. Namely, Au is distributed deeper into the Group III nitride compound semiconductor than is Ni. As a result, the resistivity of the electrode is lowered and its ohmic characteristics are improved as well as its adhesive strength.

摘要翻译： 具有双层结构的具有p型导电的III族氮化物化合物半导体的电极。 第一金属电极层包括例如镍（Ni），第二金属电极层包括例如金（Au）。 在具有p型导电性的III族氮化物化合物半导体上形成Ni层，在Ni层上形成Au层。 热处理改变或反转元素Ni和Au的分布。 也就是说，与Ni相比，在第III族氮化物化合物半导体中分布更深。 结果，电极的电阻率降低，并且其欧姆特性以及其粘合强度得到改善。

公开(公告)号：US6023076A

公开(公告)日：2000-02-08

申请号：US915574

申请日：1997-08-21

申请人： Naoki Shibata

发明人： Naoki Shibata

IPC分类号： H01L33/06 ,  H01L33/08 ,  H01L33/32 ,  H01L33/40 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/38

摘要： A double-hetero structure light emitting diode using group III nitride compound semiconductor is disclosed- The diode has a first electrode connected to a first semiconductor layer and a second electrode connected to a second semiconductor layer. In one aspect of the invention, the first electrode is also connected to the second semiconductor layer. In another aspect of the invention, a resistance is disposed between the first electrode and the second semiconductor layer. In another aspect of the invention, a diode in a reverse direction and in parallel to the light emitting diode is disposed between the first and second electrodes.

摘要翻译： 公开了使用III族氮化物化合物半导体的双异质结构发光二极管。二极管具有连接到第一半导体层的第一电极和连接到第二半导体层的第二电极。 在本发明的一个方面，第一电极也连接到第二半导体层。 在本发明的另一方面，电阻被设置在第一电极和第二半导体层之间。 在本发明的另一方面，在第一和第二电极之间设置反向并与发光二极管并联的二极管。

公开(公告)号：US6005258A

公开(公告)日：1999-12-21

申请号：US806646

申请日：1997-02-26

申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

IPC分类号： H01L33/00 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L29/06

CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/40 ,  H01L33/382 ,  H01L33/385

摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.x3 Ga.sub.1-x3).sub.y3 In.sub.1-y3 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N emission layer (5), and a Mg-doped (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N p-layer (6). The AlN layer (2)--is 500 .ANG. in thickness. The GaN N.sup.+ -layer (3) is about 2.0 .mu.m in thickness and has an electron concentration of about 2.times.10.sup.18 /cm.sup.3. The n.sup.+ -layer (4) is about 2.0 .mu.m in thickness and has an electron concentration of about 2.times.10.sup.18 /cn.sup.3. The emission layer (5) is about 0.5 .mu.m in thickness. The p-layer 6 is about 1.0 .mu.m in thickness and has a hole concentration of about 2.times.10.sup.17 /cm.sup.3. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.+ -layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8) from each other. The composition ration of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n.sup.+ -layer (3). The LED (10) is designed to improve luminous intensity and to obtain a purer blue color.

摘要翻译： 发光半导体器件（10）连续地包括蓝宝石衬底（1），AlN缓冲层（2），高载流子（n型）掺杂的硅（Si）掺杂的GaN n +层（3）， 具有高载流子（n型）浓度的Si掺杂（Al x Ga 1-x 3）y 3 In 1-y 3 N n +层（4），锌（Zn）和Si掺杂（Alx2Ga1-x2）y2In1-y2N发射层（5） 和Mg掺杂（Al x Ga 1-x 1）y 1 In 1-y 1 N p层（6）。 AlN层（2） - 厚度为500 ANGSTROM。 GaN N +层（3）的厚度约为2.0μm，电子浓度约为2×1018 / cm3。 n +层（4）的厚度约为2.0μm，电子浓度约为2×10 18 / cn 3。 发射层（5）的厚度约为0.5μm。 p层6的厚度为约1.0μm，并且具有约2×10 17 / cm 3的空穴浓度。 镍电极（7,8）分别连接到p层（6）和n +层（4）。 沟槽（9）将电极（7,8）彼此电绝缘。 选择各层（4,5,6）中的Al，Ga和In的组成比来满足n +层（3）中的GaN的晶格常数。 LED（10）被设计成改善发光强度并获得更纯的蓝色。

公开(公告)号：US5753939A

公开(公告)日：1998-05-19

申请号：US813393

申请日：1997-03-07

申请人： Michinari Sassa ,  Naoki Shibata ,  Shinya Asami ,  Masayoshi Koike ,  Junichi Umezaki ,  Takahiro Kozawa

发明人： Michinari Sassa ,  Naoki Shibata ,  Shinya Asami ,  Masayoshi Koike ,  Junichi Umezaki ,  Takahiro Kozawa

IPC分类号： H01L21/205 ,  H01L33/02 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/00

CPC分类号： H01L33/38 ,  H01L33/025 ,  H01L33/32 ,  H01L33/325 ,  H01L33/382 ,  H01L2933/0016 ,  H01L33/40

摘要： A light-emitting semiconductor device having an improved metal electrode and semiconductor structure that lowers the driving voltage of the device. The device has a hetero p-n junction structure. This structure includes: (1) an n-layer having n-type conduction and a Group III nitride compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0; (2) a p-layer having p-type conduction and a Group III nitride compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0; and (3) an emission layer disposed between the n-layer and the p-layer. The device also has a metal electrode and a contact layer that is disposed between the p-layer and the metal electrode. The contact layer is doped with an acceptor impurity more heavily that is the p-layer. The acceptor impurity may be magnesium (Mg). The contact layer may be doped within the range of 1.times.10.sup.20 /cm.sup.3 to 1.times.10.sup.2l /cm.sup.3 and may comprise a first and a second contact layer.

摘要翻译： 一种具有改善的金属电极和半导体结构的发光半导体器件，其降低了器件的驱动电压。 该器件具有异质p-n结结构。 该结构包括：（1）具有n型导电的n层和满足式Al x Ga y In 1-x-y N的III族氮化物半导体，包括x = 0，y = 0，x = y = 0; （2）具有p型导电的p层和满足式Al x Ga y In 1-x-y N的III族氮化物半导体，包括x = 0，y = 0，x = y = 0; 和（3）设置在n层和p层之间的发射层。 该器件还具有设置在p层和金属电极之间的金属电极和接触层。 接触层掺杂较多的受体杂质，即p层。 受主杂质可以是镁（Mg）。 接触层可以掺杂在1×10 20 / cm 3至1×102l / cm 3的范围内，并且可以包括第一和第二接触层。

公开(公告)号：US5652438A

公开(公告)日：1997-07-29

申请号：US504340

申请日：1995-07-19

申请人： Michinari Sassa ,  Makoto Tamaki ,  Masayoshi Koike ,  Naoki Shibata ,  Masami Yamada ,  Takahide Oshio

发明人： Michinari Sassa ,  Makoto Tamaki ,  Masayoshi Koike ,  Naoki Shibata ,  Masami Yamada ,  Takahide Oshio

IPC分类号： H01L33/12 ,  H01L33/32 ,  H01L33/40 ,  H01L33/62 ,  H01L33/00

CPC分类号： H01L33/38 ,  H01L33/32 ,  H01L33/325 ,  H01L2224/48463 ,  H01L33/382 ,  H01L33/40

摘要： A light-emitting semiconductor device (10) consecutively has a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.X2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N emission layer (5), and a Mg-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N p-layer (6). The AlN buffer layer (2) has a 500 .ANG. thickness. The GaN n.sup.+ -layer (3) is about 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The n.sup.+ -layer (4) is about 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The emission layer (5) is about 0.5 .mu.m thick. The p-layer 6 is about 1.0 .mu.m thick and has a 2.times.10.sup.17 /cm.sup.3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.+ -layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). Lead lines (21, 22) are connected with the electrodes (7, 8) by a wedge bonding method to desirably reduce the surface area of the electrodes on the light-emitting side of the device upon which the electrodes are situated to thereby increase light emission from the device.

摘要翻译： 发光半导体器件（10）连续地具有蓝宝石衬底（1），AlN缓冲层（2），高载流子（n型）掺杂的硅（Si）掺杂的GaN n +层（3）， 锌（Zn）和Si掺杂（Al x Ga 1-x 1）y 1 In 1-y 1 N发射层（5）的Si掺杂（AlX2Ga1-x2）y2In1-y2N n +层（4） 和掺杂Mg的（Alx2Ga1-x2）y2In1-y2N p层（6）。 AlN缓冲层（2）具有500厚度。 GaN n +层（3）的厚度约为2.0μm，电子浓度为2×10 18 / cm 3。 n +层（4）的厚度约为2.0μm，电子浓度为2×10 18 / cm 3。 发射层（5）厚约0.5μm。 p层6的厚度约为1.0μm，空穴浓度为2×10 17 / cm 3。 镍电极（7,8）分别连接到p层（6）和n +层（4）。 一个凹槽（9）使电极（7,8）电绝缘。 引线（21,22）通过楔形接合方法与电极（7,8）连接，以期望减少电极位于其上的器件的发光侧的电极的表面积，从而增加光 从设备发射。