公开(公告)号：US06429843B1

公开(公告)日：2002-08-06

申请号：US09736561

申请日：2000-12-12

申请人： Hongyong Zhang ,  Kenji Otsuka ,  Satoshi Teramoto

发明人： Hongyong Zhang ,  Kenji Otsuka ,  Satoshi Teramoto

IPC分类号： G09G336

CPC分类号： G09G3/3655

摘要： There is disclosed an active matrix liquid crystal display that suppresses formation of a stripe pattern on the displayed image. An active matrix circuit, a peripheral drive circuit, and A image data signal lines for supplying image data signals are all integrated on a common substrate. The liquid crystal display includes a sampling circuit to which sampling circuit input lines are connected. These sampling circuit input lines are in contact with the image data signal lines and include dummy conducting lines extending to a buffer circuit. These dummy lines average out impedances of the individual image data signal lines, thus making uniform the amounts of image data signals lost from the image data signal lines. Thus, the formation of the stripe pattern is suppressed.

摘要翻译： 公开了一种有源矩阵液晶显示器，其抑制所显示的图像上的条纹图案的形成。 用于提供图像数据信号的有源矩阵电路，外围驱动电路和A图像数据信号线都被集成在公共基板上。 液晶显示器包括采样电路，采样电路输入线连接到该采样电路。 这些采样电路输入线与图像数据信号线接触，并且包括延伸到缓冲电路的虚拟导线。 这些虚拟线将各个图像数据信号线的阻抗平均化，从而使从图像数据信号线丢失的图像数据信号的量均匀。 因此，抑制条形图案的形成。

公开(公告)号：US06421101B1

公开(公告)日：2002-07-16

申请号：US09546636

申请日：2000-04-07

申请人： Hongyong Zhang ,  Satoshi Teramoto

发明人： Hongyong Zhang ,  Satoshi Teramoto

IPC分类号： G02F11343

CPC分类号： G02F1/136227 ,  G02F1/136209 ,  G02F1/136213

摘要： The present invention provides an active matrix type display device having a high aperture ratio and a required auxiliary capacitor. A source line and a gate line are overlapped with part of a pixel electrode. This overlapped region functions to be a black matrix. Further, an electrode pattern made of the same material as the pixel electrode is disposed to form the auxiliary capacitor by utilizing the pixel electrode. It allows a required value of auxiliary capacitor to be obtained without dropping the aperture ratio. Also, it allows the electrode pattern to function as a electrically shielding film for suppressing the cross-talk between the source and gate lines and the pixel electrode.

摘要翻译： 本发明提供一种具有高开口率的有源矩阵型显示装置和所需的辅助电容器。 源极线和栅极线与像素电极的一部分重叠。 该重叠区域用作黑矩阵。 此外，通过利用像素电极设置由与像素电极相同材料制成的电极图案以形成辅助电容器。 允许在不降低开口率的情况下获得所需的辅助电容值。 此外，它允许电极图案用作用于抑制源极和栅极线和像素电极之间的串扰的电屏蔽膜。

公开(公告)号：US06396470B1

公开(公告)日：2002-05-28

申请号：US09431596

申请日：1999-11-01

申请人： Hongyong Zhang ,  Noriko Uchida ,  Takatoshi Mayama ,  Tetsuya Kobayashi ,  Kazutaka Hanaoka ,  Seiji Tanuma ,  Yuichi Inoue

发明人： Hongyong Zhang ,  Noriko Uchida ,  Takatoshi Mayama ,  Tetsuya Kobayashi ,  Kazutaka Hanaoka ,  Seiji Tanuma ,  Yuichi Inoue

IPC分类号： G90G336

CPC分类号： H01L27/124 ,  G02F1/133509 ,  G02F1/13454 ,  G09G3/3648 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0408 ,  G09G2300/0814 ,  G09G2310/0281 ,  G09G2310/0297 ,  G09G2352/00 ,  H01L27/1214

摘要： A liquid crystal display apparatus has a display section formed on a first substrate. The display section including a plurality of pixels disposed in a matrix pattern, a plurality of scan lines extending in a row direction and a plurality of signal lines extending in a column direction. One pixel is connected at each cross point between the scan and signal lines and each pixel includes a semiconductor active element and a pixel electrode. A signal line driver circuit is disposed at opposite end portions in the row direction and includes semiconductor active elements for driving the scan lines. A scan line driver circuit is disposed at opposite end portions in the column direction and includes semiconductor active elements for driving the signal lines. A transparent second substrate is disposed opposing the first substrate and a liquid crystal layer is sandwiched between the first and second substrates. An insulating black color shading film is formed on an inner surface of the second substrate and covers at least a partial area of the signal line driver circuit.

摘要翻译： 液晶显示装置具有形成在第一基板上的显示部。 显示部分包括以矩阵图案布置的多个像素，沿行方向延伸的多条扫描线和沿列方向延伸的多条信号线。 一个像素连接在扫描信号线和信号线之间的每个交叉点处，并且每个像素包括半导体有源元件和像素电极。 信号线驱动电路设置在行方向的相对端部，并且包括用于驱动扫描线的半导体有源元件。 扫描线驱动电路设置在列方向的相对端部，并且包括用于驱动信号线的半导体有源元件。 透明的第二衬底与第一衬底相对设置，并且液晶层夹在第一和第二衬底之间。 绝缘黑色遮光膜形成在第二基板的内表面上，并且覆盖信号线驱动电路的至少一部分区域。

公开(公告)号：US06358784B1

公开(公告)日：2002-03-19

申请号：US09145543

申请日：1998-09-02

申请人： Hongyong Zhang ,  Shunpei Yamazaki ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Shunpei Yamazaki ,  Yasuhiko Takemura

IPC分类号： H01L21331

CPC分类号： H01L29/66757 ,  B60R25/066 ,  H01L21/223 ,  H01L27/14692 ,  Y10T29/41

摘要： A process for laser processing an article, which comprises: heating the intended article to be doped with an impurity to a temperature not higher than the melting point thereof, said article being made from a material selected from a semiconductor, a metal, an insulator, and a combination thereof; and irradiating a laser beam to the article in a reactive gas atmosphere containing said impurity, thereby allowing the impurity to physically or chemically diffuse into, combine with, or intrude into said article. The present invention also provides an apparatus for use in a laser processing process, characterized by that it is provided with an internal sample holder and a device which functions as a heating means of the sample, a window made of a material sufficiently transparent to transmit a laser beam, a chamber comprising a vacuum evacuation device and a device for introducing a reactive gas containing an impurity element, a laser apparatus operating in a pulsed mode to irradiate a laser beam to said chamber, and a means to move said chamber synchronously with the laser irradiation.

摘要翻译： 一种激光加工制品的方法，包括：将待掺杂杂质的预期制品加热到不高于其熔点的温度，所述制品由选自半导体，金属，绝缘体， 及其组合; 并在包含所述杂质的反应性气体气氛中向所述制品照射激光束，从而使所述杂质物理或化学扩散到所述制品中，与之结合或侵入所述制品。 本发明还提供了一种在激光加工工艺中使用的装置，其特征在于，其具有内部样品保持器和用作样品加热装置的装置，由足够透明的材料制成的窗口， 激光束，包括真空抽出装置的腔室和用于引入含有杂质元素的反应性气体的装置，以脉冲模式操作以将激光束照射到所述腔室的激光装置，以及与所述腔室同步地移动所述腔室的装置 激光照射。

公开(公告)号：US06323071B1

公开(公告)日：2001-11-27

申请号：US09233146

申请日：1999-01-19

申请人： Hongyong Zhang ,  Hideki Uochi ,  Toru Takayama ,  Takeshi Fukunaga ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Hideki Uochi ,  Toru Takayama ,  Takeshi Fukunaga ,  Yasuhiko Takemura

IPC分类号： H01L2100

CPC分类号： H01L21/02672 ,  G09G2300/0408 ,  H01L21/02532 ,  H01L21/2022 ,  H01L27/1251 ,  H01L27/1277 ,  H01L27/1281 ,  H01L29/66757

摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.

摘要翻译： 提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。 通过选择性地形成包含镍，铁，钴，钌，铑，钯，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，银的薄膜，颗粒或簇而获得晶体硅膜 或其硅化物以岛状，线状，条状，点状或薄膜形式存在于非晶硅膜上或下方，并以它们为起始点，通过在比非晶硅的正常结晶温度低的温度下进行退火， 。 通过在要成为有源层的半导体层上选择性地形成覆盖膜，通过在构成具有薄膜晶体管的动态电路的同时获得泄漏电流低的晶体管和迁移率高的晶体管 晶体管，然后通过其热结晶。

公开(公告)号：US06300659B1

公开(公告)日：2001-10-09

申请号：US09459339

申请日：1999-12-13

申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura

IPC分类号： H01L2900

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2022 ,  H01L29/66757 ,  H01L29/78675

摘要： A thin-film transistor (TFT) which has a crystalline silicon active layer of excellent reliability and characteristics, and a method of fabricating such a TFT inexpensively are provided. In a TFT which has at least two low density impurity regions and a source/drain adjacent to a channel-forming region, catalyst elements which cause amorphous silicon to crystallize are included in the source/drain, and the density of said catalyst elements in the interface between the channel-forming region and the low-density impurity regions is less than that in the source/drain.

摘要翻译： 提供具有优异的可靠性和特性的晶体硅有源层的薄膜晶体管（TFT）以及廉价地制造这种TFT的方法。 在具有至少两个低密度杂质区域和与沟道形成区域相邻的源极/漏极的TFT中，在源极/漏极中包括引起非晶硅​​结晶的催化剂元件，并且所述催化剂元件的密度在 沟道形成区域和低浓度杂质区域之间的界面小于源极/漏极中的界面。

公开(公告)号：US06261875B1

公开(公告)日：2001-07-17

申请号：US09432109

申请日：1999-11-02

申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura

IPC分类号： H01L2100

CPC分类号： H01L21/2022 ,  H01L21/26506 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/78678

摘要： A process for fabricating a thin film transistor, which comprises crystallizing an amorphous silicon film, forming thereon a gate insulating film and a gate electrode, implanting impurities in a self-aligned manner, adhering a coating containing a catalyst element which accelerates the crystallization of the silicon film, and annealing the resulting structure at a temperature lower than the deformation temperature of the substrate to activate the doped impurities. Otherwise, the catalyst element can be incorporated into the structure by introducing it into the impurity region by means of ion implantation and the like. Also a process for fabricating a thin film transistor, which comprises forming a gate electrode, a gate insulating film, and an amorphous silicon film on a substrate, implanting impurities into the amorphous silicon film to form source and drain regions as the impurity regions, introducing a catalyst element into the impurity region by adhering a coating containing the catalyst element of by means of ion doping and the like, and annealing the resulting structure at a temperature lower than the deformation temperature of the substrate to activate the doped impurities.

摘要翻译： 一种制造薄膜晶体管的方法，包括使非晶硅膜结晶，在其上形成栅极绝缘膜和栅电极，以自对准的方式注入杂质，粘附含有催化剂元素的涂层，其加速了 硅膜，并在低于衬底的变形温度的温度下退火所得到的结构，以激活掺杂的杂质。 否则，可以通过离子注入等将催化剂元素引入到杂质区域中而将其结合到结构中。 还有一种制造薄膜晶体管的方法，其包括在衬底上形成栅电极，栅极绝缘膜和非晶硅膜，将杂质注入到非晶硅膜中以形成源区和漏区作为杂质区，引入 通过使含有催化剂元素的涂层通过离子掺杂等粘合而将催化剂元素进入杂质区域，并在低于基板的变形温度的温度下对所得结构退火以活化掺杂的杂质。

公开(公告)号：US06243155B1

公开(公告)日：2001-06-05

申请号：US09174468

申请日：1998-10-19

申请人： Hongyong Zhang ,  Masayuki Sakakura ,  Hideaki Kuwabara

发明人： Hongyong Zhang ,  Masayuki Sakakura ,  Hideaki Kuwabara

IPC分类号： G02F113

CPC分类号： H04N1/00129 ,  G02F1/133345 ,  G02F1/135 ,  G02F1/136227 ,  G02F1/13624 ,  G02F1/136286 ,  G02F2001/13312 ,  G02F2001/13629 ,  H01L27/12 ,  H01L27/14665 ,  H04M1/0264 ,  H04M1/0266 ,  H04N1/00127 ,  H04N1/028 ,  H04N1/02805

摘要： A display device using a novel semiconductor device, which includes a pixel matrix, an image sensor, and a peripheral circuit for driving those, that is, which has both a camera function and a display function, and is made intelligent, is provided and a method of manufacturing the same is also provided. One pixel includes a semiconductor device for display and a semiconductor for light reception, that is, one pixel includes semiconductor devices (insulated gate-type field effect semiconductor device) for controlling both display and light reception, so that the display device having a picture reading function is made miniaturized and compact.

摘要翻译： 提供了一种使用新颖的半导体器件的显示装置，其包括像素矩阵，图像传感器和用于驱动它们的外围电路，即具有相机功能和显示功能，并且是智能的。 还提供了制造该方法的方法。 一个像素包括用于显示的半导体器件和用于光接收的半导体，即，一个像素包括用于控制显示和光接收的半导体器件（绝缘栅型场效应半导体器件），使得具有图像读取的显示器件 功能小型化，小巧化。

公开(公告)号：US06174757B1

公开(公告)日：2001-01-16

申请号：US09273425

申请日：1999-03-19

申请人： Naoaki Yamaguchi ,  Hongyong Zhang ,  Satoshi Teramoto ,  Hideto Ohnuma

发明人： Naoaki Yamaguchi ,  Hongyong Zhang ,  Satoshi Teramoto ,  Hideto Ohnuma

IPC分类号： H01L2184

CPC分类号： H01L27/127 ,  H01L21/3003 ,  H01L27/1214 ,  H01L29/66757 ,  Y10S438/91

摘要： In producing a semiconductor device such as a thin film transistor (TFT), a silicon semiconductor film is formed on a substrate having an insulating surface, such as a glass substrate, and then a silicon nitride film is formed on the silicon semiconductor film. After that, a hydrogen ion, fluorine ion, or chlorine ion is introduced into the silicon semiconductor film through the silicon nitride film, and then the silicon semiconductor film into which an ion is introduced is heated in an atmosphere containing hydrogen, fluorine, chlorine or these mixture, to neutralize dangling bonds in the silicon semiconductor film and reduce levels in the silicon semiconductor film.

摘要翻译： 在制造诸如薄膜晶体管（TFT）的半导体器件中，在具有绝缘表面的衬底（例如玻璃衬底）上形成硅半导体膜，然后在硅半导体膜上形成氮化硅膜。 之后，通过氮化硅膜将氢离子，氟离子或氯离子引入硅半导体膜，然后在其中引入离子的硅半导体膜在含有氢，氟，氯或 这些混合物，以中和硅半导体膜中的悬挂键并降低硅半导体膜中的水平。

公开(公告)号：US06172671B2

公开(公告)日：2001-01-09

申请号：US09325260

申请日：1999-06-03

申请人： Tsukasa Shibuya ,  Atsushi Yoshinouchi ,  Hongyong Zhang ,  Akira Takenouchi

发明人： Tsukasa Shibuya ,  Atsushi Yoshinouchi ,  Hongyong Zhang ,  Akira Takenouchi

IPC分类号： G09G500

CPC分类号： G02F1/13454 ,  H01L27/1214 ,  H01L27/1259 ,  H01L27/1288

摘要： There is provided an active matrix type display in which thin film transistors having required characteristics are provided selectively in a pixel matrix portion and a peripheral driving circuit portion. In a structure having the pixel matrix portion and the peripheral driving circuit portion on the same substrate, N-channel type thin film transistors having source and drain regions formed through a non-self-alignment process and low concentrate impurity regions formed through a self-alignment process are formed in the pixel matrix portion and in an N-channel driver portion of the peripheral driving circuit portion. A P-channel type thin film transistor in which no low concentrate impurity region is formed and source and drain regions are formed only through the self-alignment process is formed in a P-channel driver portion of the peripheral driving circuit portion.

摘要翻译： 提供一种有源矩阵型显示器，其中具有所需特性的薄膜晶体管选择性地设置在像素矩阵部分和外围驱动电路部分中。 在具有同一衬底上的像素矩阵部分和外围驱动电路部分的结构中，通过非自对准工艺形成的源极和漏极区域和通过自对准工艺形成的低浓缩杂质区域的N沟道型薄膜晶体管， 在外围驱动电路部分的像素矩阵部分和N沟道驱动器部分中形成对准处理。 在周边驱动电路部分的P沟道驱动器部分中形成P型沟道型薄膜晶体管，其中不形成低浓度杂质区，而仅通过自对准工艺形成源极和漏极区。