公开(公告)号：US20080092529A1

公开(公告)日：2008-04-24

申请号：US11905443

申请日：2007-10-01

申请人： Hisao Haga ,  Norio Suzuki ,  Katsuji Wada

发明人： Hisao Haga ,  Norio Suzuki ,  Katsuji Wada

IPC分类号： F01N3/18 ,  G06F19/00

CPC分类号： F01N3/0807 ,  F01N3/035 ,  F01N3/0842 ,  F01N11/002 ,  F01N11/007 ,  F01N13/009 ,  F01N2560/06 ,  F01N2560/14 ,  F02B37/00 ,  F02D41/024 ,  F02D41/028 ,  F02D41/405 ,  F02D2200/0802 ,  F02D2200/0818 ,  Y02T10/26 ,  Y02T10/44 ,  Y02T10/47

摘要： An exhaust gas purifying apparatus for an internal combustion engine having a NOx removing device provided in an exhaust system of the engine and at least one fuel injector for injecting fuel into a combustion chamber of the engine. A temperature of the NOx removing device is detected and a regeneration process, which removes sulfur oxide accumulated in the NOx removing device, is performed. The regeneration process is performed by performing at least one post injection after performing a main injection by the at least one fuel injector to raise a temperature of the NOx removing device or by increasing a main injection amount of fuel to raise the temperature of the NOx removing device without performing the post injection. The exhaust gases are then controlled to flow into the NOx removing device in the reducing state.

摘要翻译： 一种用于内燃机的废气净化装置，其具有设置在发动机的排气系统中的NOx去除装置和至少一个用于将燃料喷射到发动机的燃烧室中的燃料喷射器。 检测NOx去除装置的温度，并且执行去除积存在NOx去除装置中的硫氧化物的再生处理。 通过在由至少一个燃料喷射器执行主喷射之后执行至少一个后喷射以升高NOx去除装置的温度或者通过增加燃料的主喷射量以提高NOx去除的温度来执行再生过程 设备，而不执行后注入。 然后控制废气以还原状态流入NOx去除装置。

公开(公告)号：US20070296030A1

公开(公告)日：2007-12-27

申请号：US11848992

申请日：2007-08-31

申请人： Shoji SHUKURI ,  Norio Suzuki ,  Yasuhiro Taniguchi

发明人： Shoji SHUKURI ,  Norio Suzuki ,  Yasuhiro Taniguchi

IPC分类号： H01L29/76

CPC分类号： H01L21/823456 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/823462 ,  H01L21/823481 ,  H01L21/8238 ,  H01L21/823857 ,  H01L21/823878 ,  H01L27/0922 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/10873 ,  H01L27/10894 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11546 ,  H01L29/513 ,  H01L29/6659 ,  H01L29/7833

摘要： A method for manufacturing a semiconductor integrated circuit device including a first field effect transistor having a gate insulating film formed over a first element forming region of a main surface of a semiconductor substrate; and a second field effect transistor having a gate insulating film formed over a second element forming region of the main surface of the semiconductor substrate and made thinner than the gate insulating film of the first field effect transistor. The method comprises the steps of forming a thermally oxidized film over a first element forming region and a second element forming region of the main surface of the semiconductor substrate; forming a deposited film over the main surface of the semiconductor substrate including said thermally oxidized film; removing the deposited film and said thermally oxidized film from over the second element forming region; and forming a thermally oxidized film over the second element forming region to form a gate insulating film individually over the first element forming region and the second element forming region.

公开(公告)号：US20070274889A1

公开(公告)日：2007-11-29

申请号：US10578664

申请日：2004-11-08

申请人： Tadao Nakatsuji ,  Norio Suzuki ,  Hiroshi Ohno ,  Naohiro Sato ,  Tomoko Morita ,  Katsuji Wada

发明人： Tadao Nakatsuji ,  Norio Suzuki ,  Hiroshi Ohno ,  Naohiro Sato ,  Tomoko Morita ,  Katsuji Wada

IPC分类号： B01D53/56 ,  B01J23/652 ,  B01J29/22 ,  B01J29/24 ,  B01J29/76

CPC分类号： B01D53/9422 ,  B01D2255/102 ,  B01D2255/20 ,  B01D2255/206 ,  B01J23/652 ,  B01J29/7415 ,  B01J29/7615 ,  B01J29/7815 ,  B01J35/0006

摘要： The invention provides a catalyst for catalytic reduction of nitrogen oxides contained in exhaust gases wherein fuel is supplied and subjected to combustion under periodic rich/lean conditions and the resulting exhaust gases are brought into contact therewith, which catalyst comprises: (A) a catalyst component A comprising (c) ceria or (d) praseodymium oxide or (e) an oxide and/or a composite oxide of at least two elements selected from the group consisting of cerium, zirconium, praseodymium, neodymium, terbium, samarium, gadolinium and lanthanum; (B) a catalyst component B comprising (d) a noble metal catalyst component selected from the group consisting of platinum, rhodium, palladium and oxides thereof and (e) a carrier; and (C) a catalyst component C comprising (f) a solid acid, and (g) a solid acid supporting an oxide of at least one element selected from the group consisting of vanadium, tungsten, molybdenum, copper, iron, cobalt, nickel and manganese. The catalyst reduces NOx contained in exhaust gases wherein fuel is supplied and subjected to combustion with a periodic rich/lean excursions, whereby NOx is generated in the exhaust gases, with high durability in a wide temperature range even in the presence of oxygen, sulfur oxides or water.

摘要翻译： 本发明提供一种用于催化还原废气中所含的氮氧化物的催化剂，其中燃料在周期性富/贫条件下被供应并经历燃烧，并使得到的废气与其接触，该催化剂包括：（A）催化剂组分 A包括（c）二氧化铈或（d）氧化镨或（e）选自铈，锆，镨，钕，铽，钐，钆和镧中的至少两种元素的氧化物和/或复合氧化物 ; （B）催化剂组分B，其包含（d）选自铂，铑，钯及其氧化物的贵金属催化剂组分和（e）载体; 和（C）包含（f）固体酸的催化剂组分C，和（g）支持选自钒，钨，钼，铜，铁，钴，镍， 和锰。 催化剂还原废气中所含的NOx，其中燃料被供给并经历周期性的富/贫漂移的燃烧，从而在废气中产生NOx，即使在存在氧，硫氧化物的情况下，在宽温度范围内具有高耐久性 或水。

公开(公告)号：US07144766B2

公开(公告)日：2006-12-05

申请号：US11198858

申请日：2005-08-08

申请人： Naoki Yamamoto ,  Hiroyuki Uchiyama ,  Norio Suzuki ,  Eisuke Nishitani ,  Shin'ichiro Kimura ,  Kazuyuki Hozawa

发明人： Naoki Yamamoto ,  Hiroyuki Uchiyama ,  Norio Suzuki ,  Eisuke Nishitani ,  Shin'ichiro Kimura ,  Kazuyuki Hozawa

IPC分类号： H01L22/336 ,  H01L22/8234

CPC分类号： H01L21/28194 ,  H01L21/02057 ,  H01L21/02068 ,  H01L21/02071 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/28061 ,  H01L21/28176 ,  H01L21/28247 ,  H01L21/31662 ,  H01L21/67115 ,  H01L21/76838 ,  H01L21/823437 ,  H01L21/84 ,  H01L27/10814 ,  H01L27/10873 ,  H01L27/10894 ,  H01L27/1214 ,  H01L29/4941 ,  H01L29/518

摘要： When an oxidation treatment for regenerating a gate insulating film 6 is performed after forming gate electrodes 7A of a polymetal structure in which a WNx film and a W film are stacked on a polysilicon film, a wafer 1 is heated and cooled under conditions for reducing a W oxide 27 on the sidewall of each gate electrode 7A. As a result, the amount of the W oxide 27 to be deposited on the surface of the wafer 1 is reduced.

摘要翻译： 当在多晶硅膜上堆叠WN薄膜和W膜的多金属结构的栅极电极7A之后进行用于再生栅极绝缘膜6的氧化处理时，晶片1 在用于还原每个栅电极7A的侧壁上的W氧化物27的条件下被加热和冷却。结果，沉积在晶片1的表面上的W氧化物27的量减少。

公开(公告)号：US20060255499A1

公开(公告)日：2006-11-16

申请号：US11489607

申请日：2006-07-20

申请人： Takashi Ochi ,  Akira Kishiro ,  Shuichi Nonaka ,  Takaaki Mihara ,  Norio Suzuki

发明人： Takashi Ochi ,  Akira Kishiro ,  Shuichi Nonaka ,  Takaaki Mihara ,  Norio Suzuki

IPC分类号： B29C47/60

CPC分类号： D01F6/84 ,  B29C48/362 ,  D01D5/247 ,  D01F6/00 ,  D01F6/04 ,  D01F6/06 ,  D01F6/16 ,  D01F6/60 ,  D01F6/62 ,  D01F6/76 ,  D01F8/12 ,  Y10T428/2913 ,  Y10T428/2924 ,  Y10T428/2929 ,  Y10T428/2931 ,  Y10T428/2935 ,  Y10T428/2967 ,  Y10T428/2973 ,  Y10T428/2975 ,  Y10T442/3065 ,  Y10T442/3089 ,  Y10T442/3146 ,  Y10T442/3163 ,  Y10T442/431 ,  Y10T442/444 ,  Y10T442/609 ,  Y10T442/637 ,  Y10T442/64

摘要： The present invention provides a nanoporous fiber being substantially free from coarse pores and having homogeneously dispersed nanopores, unlike conventional porous fibers. A porous fiber has pores each having a diameter of 100 nm or less, in which the area ratio of pores each having a diameter of 200 nm or more to the total cross section of the fiber is 1.5% or less, and the pores are unconnected pores, or a porous fiber has pores each having a diameter of 100 nm or less, in which the area ratio of pores each having a diameter of 200 nm or more to the total cross section of the fiber is 1.5% or less, the pores are connected pores, and the fiber has a strength of 1.0 cN/dtex or more.

摘要翻译： 本发明提供了一种基本上不含粗孔并具有均匀分散的纳米孔的纳米多孔纤维，这与常规多孔纤维不同。 多孔纤维具有直径为100nm以下的孔，其中，直径为200nm以上的孔与纤维的总截面的面积比为1.5％以下，孔未连接 孔或多孔纤维具有直径为100nm以下的孔，其中直径为200nm以上的孔相对于纤维的总截面的面积比为1.5％以下，孔 是连接孔，纤维的强度为1.0cN / dtex以上。

公开(公告)号：US20060210618A1

公开(公告)日：2006-09-21

申请号：US10541309

申请日：2003-12-12

申请人： Kazuhiro Kubo ,  Chika Itoh ,  Syunsuke Ohhashi ,  Tohru Yasukohchi ,  Yusuke Ohkawa ,  Hiroshi Kikuchi ,  Norio Suzuki ,  Miho Takahashi ,  Hitoshi Yamauchi

发明人： Kazuhiro Kubo ,  Chika Itoh ,  Syunsuke Ohhashi ,  Tohru Yasukohchi ,  Yusuke Ohkawa ,  Hiroshi Kikuchi ,  Norio Suzuki ,  Miho Takahashi ,  Hitoshi Yamauchi

IPC分类号： A61K9/127 ,  C07F9/02 ,  A61K31/66

CPC分类号： A61K9/127 ,  A61K8/14 ,  A61K8/553 ,  A61K9/0014 ,  A61K9/1273 ,  A61K47/24 ,  A61Q19/00 ,  C07F9/10 ,  C08G65/2609 ,  C08G65/3353 ,  C08G2650/34

摘要： A phospholipid derivative represented by the following formula (1): wherein [PG]k represents a residue of polyglycerin having a polymerization degree of k, wherein k is 2 to 50, R1CO and R2CO independently represent an acyl group having 8 to 22 carbon atoms, symbol “a” independently represents an integer of 0 to 5, symbol “b” independently represents 0 or 1, M represents hydrogen atom, an alkali metal atom, an ammonium, or an organic ammonium, and k1, k2, and k3 represent numbers satisfying the following conditions: 1≦k1≦(k+2)/2, 0≦k2, and k1+k2+k3=k+2. The phospholipid derivative is highly safe for living bodies and can be suitably utilized in drug delivery systems such as liposome, and the like.

摘要翻译： 由下式（1）表示的磷脂衍生物：其中[PG] k表示聚合度为k的聚甘油的残基，其中k为2至50，R 1 CO和R SUP > 2 CO独立地表示具有8至22个碳原子的酰基，符号“a”独立地表示0至5的整数，符号“b”独立地表示0或1，M表示氢原子，碱金属 原子，铵或有机铵，k1，k2和k3表示满足以下条件的数：1 <= k1 <=（k + 2）/ 2,0 <= k2，k1 + k2 + k3 = k + 2。 磷脂衍生物对于活体是高度安全的，并且可以适用于药物递送系统如脂质体等。

公开(公告)号：US07074691B2

公开(公告)日：2006-07-11

申请号：US11149539

申请日：2005-06-10

申请人： Hidenori Sato ,  Norio Suzuki ,  Akira Takamatsu ,  Hiroyuki Maruyama ,  Takeshi Saikawa ,  Katsuhiko Hotta ,  Hiroyuki Ichizoe

发明人： Hidenori Sato ,  Norio Suzuki ,  Akira Takamatsu ,  Hiroyuki Maruyama ,  Takeshi Saikawa ,  Katsuhiko Hotta ,  Hiroyuki Ichizoe

IPC分类号： H01L21/762

CPC分类号： H01L21/76229 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/3125 ,  H01L21/31612 ,  H01L27/0211 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/10814 ,  H01L27/10844 ,  H01L27/10894

摘要： A method for manufacturing a semiconductor integrated circuit device includes the steps of forming an isolation trench in an isolation region of a semiconductor substrate, filling the isolation trench up to predetermined middle position in its depth direction with a first insulating film deposited by a coating method, filling a remaining depth portion of the isolation trench into which the first insulating film is filled with a second insulating film, then forming a plurality of patterns on the semiconductor substrate, filling a trench forming between the plurality of patterns up to predetermined middle position in a trench depth direction with a third insulating film deposited by a coating method, and filling a remaining portion of the trench into which the third insulating film is filled with a fourth insulating film that is more difficult to etch than the third insulating film. The method may also include the step of forming dummy patters in a relatively large isolation region of isolation regions with relatively different planar dimensions before the first insulating film is deposited.

摘要翻译： 一种制造半导体集成电路器件的方法包括以下步骤：在半导体衬底的隔离区域中形成隔离沟槽，通过涂覆方法沉积的第一绝缘膜将隔离沟填充到其深度方向上的预定中间位置， 用第二绝缘膜填充绝缘沟槽的剩余深度部分，然后在半导体衬底上形成多个图案，在多个图案之间填充形成沟槽直到预定中间位置的沟槽 沟槽深度方向与通过涂覆方法沉积的第三绝缘膜，并且填充第三绝缘膜填充有比第三绝缘膜更难蚀刻的第四绝缘膜的沟槽的剩余部分。 该方法还可以包括在第一绝缘膜沉积之前在具有相对不同的平面尺寸的隔离区的相对大的隔离区域中形成伪图案的步骤。

公开(公告)号：US20050187249A1

公开(公告)日：2005-08-25

申请号：US10513339

申请日：2003-05-13

申请人： Yoshimine Fuji ,  Norio Suzuki

发明人： Yoshimine Fuji ,  Norio Suzuki

IPC分类号： A61K9/19 ,  A61K9/20 ,  A61K31/40 ,  A61K31/404 ,  A61K31/445 ,  A61K31/4025 ,  A61K31/405

CPC分类号： A61K9/2077 ,  A61K9/19 ,  A61K31/40 ,  A61K31/404 ,  A61K31/445

摘要： The present invention relates to an aqueous solution containing a physiologically active substance which may have a substituent and which has an amidino group, wherein the pH of the solution is higher than 2 and equal to or lower than 4. The invention also relates to a lyophilized product obtained by drying the solution, to an injection containing the aqueous solution or the lyophilized product, and to an injection kit.

摘要翻译： 本发明涉及含有可具有取代基并具有脒基的生理活性物质的水溶液，其中溶液的pH高于2且等于或低于4.本发明还涉及一种冻干的 通过将溶液干燥获得的产物，含有水溶液或冻干产品的注射剂，以及注射试剂盒。

公开(公告)号：US06858515B2

公开(公告)日：2005-02-22

申请号：US10638485

申请日：2003-08-12

申请人： Norio Ishitsuka ,  Hideo Miura ,  Shuji Ikeda ,  Yasuko Yoshida ,  Norio Suzuki ,  Kozo Watanabe ,  Kenji Kanamitsu

发明人： Norio Ishitsuka ,  Hideo Miura ,  Shuji Ikeda ,  Yasuko Yoshida ,  Norio Suzuki ,  Kozo Watanabe ,  Kenji Kanamitsu

IPC分类号： H01L21/76 ,  H01L21/316 ,  H01L21/762 ,  H01L29/06

CPC分类号： H01L21/76232 ,  H01L29/0657

摘要： A semiconductor device free from electric failure in transistors at upper trench edges can be produced by a simplified process comprising basic steps of forming a pad oxide film on the circuit-forming side of a semiconductor substrate; forming an oxidation prevention film on the pad oxide film; removing the oxidation presention film and the pad oxide film at a desired position, thereby exposing the surface of the semiconductor substrate; horizontally recessing the pad oxide film, etching the exposed surface of the semiconductor substrate by isotropic etching; forming a trench to a desired depth, using the oxidation prevention film as a mask; horizontally recessing the pad oxide film; oxidizing the trench formed in the semiconductor substrate; embedding an embedding isolation film in the oxidized trench; removing the embedding isolation film formed on the oxidation prevention film; removing the oxidation prevention film formed on the circuit-forming side of the semiconductor substrate; and removing the pad oxide film formed on the circuit-forming side of the semiconductor substrate, where round upper trench edges with a curvature can be obtained, if necessary, by conducting isotropic etching of exposed surface of the semiconductor substrate and horizontally recessing of the pad oxide film before the oxidation of the trench, whereby only one oxidation step is required.

摘要翻译： 在上沟槽边缘处的晶体管中没有电故障的半导体器件可以通过简化的工艺制造，包括在半导体衬底的电路形成侧形成衬垫氧化膜的基本步骤; 在衬垫氧化膜上形成氧化防止膜; 在期望的位置除去氧化呈现膜和衬垫氧化膜，从而暴露半导体衬底的表面; 水平地凹陷衬垫氧化膜，通过各向同性蚀刻蚀刻半导体衬底的暴露表面; 使用氧化防止膜作为掩模，形成期望深度的沟槽; 使衬垫氧化膜水平地凹陷; 氧化在半导体衬底中形成的沟槽; 在氧化沟槽中嵌入嵌入隔离膜; 去除形成在防氧化膜上的嵌入隔离膜; 去除形成在半导体衬底的电路形成侧的氧化防止膜; 以及去除形成在半导体衬底的电路形成侧的衬垫氧化膜，其中如果需要，可以获得具有曲率的圆形上沟槽边缘，通过对半导体衬底的暴露表面进行各向同性蚀刻并且使衬垫的水平凹陷 氧化膜在沟槽氧化之前，因此只需要一个氧化步骤。

公开(公告)号：US06806130B2

公开(公告)日：2004-10-19

申请号：US10014405

申请日：2001-12-14

申请人： Hiroto Kawagoe ,  Tatsumi Shirasu ,  Shogo Kiyota ,  Norio Suzuki ,  Eiichi Yamada ,  Yuji Sugino ,  Manabu Kitano ,  Yoshihiko Sakurai ,  Takashi Naganuma ,  Hisashi Arakawa

发明人： Hiroto Kawagoe ,  Tatsumi Shirasu ,  Shogo Kiyota ,  Norio Suzuki ,  Eiichi Yamada ,  Yuji Sugino ,  Manabu Kitano ,  Yoshihiko Sakurai ,  Takashi Naganuma ,  Hisashi Arakawa

IPC分类号： H01L218238

CPC分类号： H01L27/0925 ,  H01L21/823807

摘要： Over the principal surface of a semiconductor substrate body containing an impurity of a predetermined conduction type, there is formed an epitaxial layer which contains an impurity of the same conduction type as that of the former impurity and the same concentration as the designed one of the former impurity. After this, there are formed a well region which has the same conduction type as that of said impurity and its impurity concentration gradually lowered depthwise of said epitaxial layer. The well region is formed with the gate insulating films of MIS·FETs.

摘要翻译： 在包含预定导电类型的杂质的半导体衬底主体的主表面上，形成外延层，该外延层含有与前一种杂质相同的导电类型的杂质，并且与前者中设计的杂质相同 不纯。 之后，形成具有与所述杂质相同的导电类型的阱区，并且其杂质浓度从所述外延层的深度逐渐降低。 阱区由MIS.FET的栅极绝缘膜形成。