公开(公告)号：US20180336089A1

公开(公告)日：2018-11-22

申请号：US15963163

申请日：2018-04-26

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John Eric Linstadt ,  Liji Gopalakrishnan

IPC: G06F11/10 ,  G06F3/06

Abstract: A memory system employs an addressing scheme to logically divide rows of memory cells into separate contiguous regions, one for data storage and another for error detection and correction (EDC) codes corresponding to that data. Data and corresponding EDC codes are stored in the same row of the same bank. Accessing data and corresponding EDC code in the same row of the same bank advantageously saves power and avoids bank conflicts. The addressing scheme partitions the memory without requiring the requesting processor to have an understanding of the memory partition.

公开(公告)号：US20180267911A1

公开(公告)日：2018-09-20

申请号：US15761746

申请日：2016-09-09

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Kenneth L. Wright ,  John Eric Linstadt ,  Craig Hampel

IPC: G06F13/16 ,  G06F11/10 ,  G11C29/52 ,  G06F3/06 ,  G06F12/0895 ,  G06F13/28

CPC classification number: G06F13/1678 ,  G06F3/0604 ,  G06F3/0613 ,  G06F3/0619 ,  G06F3/0634 ,  G06F3/0656 ,  G06F3/0673 ,  G06F11/1004 ,  G06F11/1068 ,  G06F12/0868 ,  G06F12/0888 ,  G06F12/0895 ,  G06F13/28 ,  G06F2212/1016 ,  G06F2212/1032 ,  G06F2212/403 ,  G11C7/10 ,  G11C29/52

Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, a memory module includes a pin interface for coupling to a bus. The bus has a first width. The module includes at least one storage class memory (SCM) component and at least one DRAM component. The memory module operates in a first mode that utilizes all of the first width, and in a second mode that utilizes less than all of the first width.

公开(公告)号：US20180166120A1

公开(公告)日：2018-06-14

申请号：US15829787

申请日：2017-12-01

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John Eric Linstadt ,  Zhichao Lu ,  Kenneth Lee Wright

IPC: G11C11/4091 ,  G06F11/10

Abstract: Memory devices, controllers and associated methods are disclosed. In one embodiment, a memory device is disclosed. The memory device includes storage cells that are each formed with a metal-oxide-semiconductor (MOS) transistor having a floating body. Data is stored as charge in the floating body. A transfer interface receives a read command to access data stored in a first group of the storage cells. Sensing circuitry detects the data stored in the first group of storage cells. The transfer interface selectively performs a writeback operation of the sensed data associated with the read command.

公开(公告)号：US09997233B1

公开(公告)日：2018-06-12

申请号：US15285974

申请日：2016-10-05

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John Eric Linstadt ,  Kenneth L. Wright

IPC: G11C11/4093 ,  G11C11/4091 ,  G11C11/4076 ,  G11C7/10 ,  G06F12/14 ,  G06F13/16

CPC classification number: G11C11/4093 ,  G06F12/1433 ,  G06F13/1673 ,  G06F13/1678 ,  G06F2212/1052 ,  G11C5/04 ,  G11C7/1072 ,  G11C11/4072 ,  G11C11/4076 ,  G11C11/408 ,  G11C11/4091 ,  G11C29/22 ,  G11C29/32 ,  G11C29/38

Abstract: In a memory module having a buffer component, a plurality of data signaling paths and a plurality of memory dies each coupled to a respective one of the data signaling paths, the buffer component receives and stores a first configuration value that specifies a memory-die quantity N, where N is permitted to range from a first value corresponding to the quantity of the data signaling paths to at least one value less than the first value. The buffer component further receives a memory read command and enables, in accordance with the first configuration value, a quantity N of the memory dies to output read data in response to the memory read command.

公开(公告)号：US09979416B2

公开(公告)日：2018-05-22

申请号：US14941564

申请日：2015-11-14

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John Eric Linstadt

IPC: H03M13/05 ,  G06F13/16 ,  G06F3/06 ,  H03M13/09 ,  H03M13/11 ,  H03M13/15 ,  H03M13/19

CPC classification number: H03M13/05 ,  G06F3/0619 ,  G06F3/0653 ,  G06F3/0673 ,  G06F13/1668 ,  H03M13/09 ,  H03M13/1102 ,  H03M13/151 ,  H03M13/1515 ,  H03M13/19

Abstract: Memory controllers, devices and associated methods are disclosed. In one embodiment, a memory controller includes write circuitry to transmit write data to a memory device, the write circuitry includes a write error detection correction (EDC) encoder to generate first error information associated with the write data. Data bus inversion (DBI) circuitry conditionally inverts data bits associated with each of the write data words based on threshold criteria. Read circuitry receives read data from the memory device. The read circuitry includes a read EDC encoder to generate second error information associated with the received read data. Logic evaluates the first and second error information and conditionally reverse-inverts at least a portion of the read data based on the decoding.

公开(公告)号：US20170287571A1

公开(公告)日：2017-10-05

申请号：US15506621

申请日：2015-08-17

Applicant: Rambus Inc.

Inventor： Scott C. Best ,  John Eric Linstadt ,  Paul William Roukema

IPC: G11C29/44 ,  G11C11/401 ,  G11C29/02 ,  G11C5/04 ,  G11C29/52 ,  G11C29/00

CPC classification number: G11C29/4401 ,  G11C5/04 ,  G11C11/401 ,  G11C29/022 ,  G11C29/52 ,  G11C29/76 ,  G11C29/783 ,  G11C29/88 ,  G11C2029/4402

Abstract: A buffer circuit is disclosed. The buffer circuit includes a command address (C/A) interface to receive an incoming activate (ACT) command and an incoming column address strobe (CAS) command. A first match circuit includes first storage to store failure row address information associated with the memory, and first compare logic. The first compare logic is responsive to the ACT command, to compare incoming row address information to the stored failure row address information. A second match circuit includes second storage to store failure column address information associated with the memory, and second compare logic. The second compare logic is responsive to the CAS command, to compare the incoming column address information to the stored failure column address information. Gating logic maintains a state of a matching row address identified by the first compare logic during the comparison carried out by the second compare logic.

公开(公告)号：US20170162252A1

公开(公告)日：2017-06-08

申请号：US15352366

申请日：2016-11-15

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John Eric Linstadt ,  Thomas Vogelsang

IPC: G11C11/4093 ,  G11C11/4076 ,  G11C11/4094

CPC classification number: G11C11/4093 ,  G11C11/4076 ,  G11C11/4094 ,  G11C11/4097

Abstract: A memory stack comprises at least two memory components. The memory components have a first data link interface and are to transmit signals on a data link coupled to the first data link interface at a first voltage level. A buffer component has a second data link interface coupled to the data link. The buffer component is to receive signals on the second data link interface at the first voltage level. A level shifting latch produces a second voltage level in response to receiving the signals at the second data link interface, where the second voltage level is higher than the first voltage level.

公开(公告)号：US09571231B2

公开(公告)日：2017-02-14

申请号：US14814206

申请日：2015-07-30

Applicant: Rambus Inc.

Inventor： John Eric Linstadt ,  Frederick A. Ware

IPC: H04L1/00 ,  H03M13/15 ,  G06F11/10 ,  H03M13/19

CPC classification number: H04L1/0047 ,  G06F11/1004 ,  H03M13/1515 ,  H03M13/1575 ,  H03M13/19

Abstract: A status encoder generates a checksum that encodes a status condition together with the checksum of an associated message. A receiver determines an inverse transformation that when applied to the received status-encoded checksum recovers the parity information associated with the codeword. The status condition can then be recovered based on the selection of the inverse transformation that correctly recovers the parity information from the status-encoded checksum. Beneficially, the status condition can be encoded without requiring additional signal lines or lengthening the codeword relative to conventional error correction devices.

Abstract translation: 状态编码器生成校验和，其将状态条件与相关消息的校验和一起编码。 接收机确定当应用于接收到的状态编码校验和时恢复与码字相关联的奇偶校验信息的逆变换。 然后可以基于从状态编码的校验和正确地恢复奇偶校验信息的逆变换的选择来恢复状态条件。 有利的是，可以编码状态条件，而不需要额外的信号线或相对于传统的纠错装置来延长码字。

公开(公告)号：US20160293239A1

公开(公告)日：2016-10-06

申请号：US15090399

申请日：2016-04-04

Applicant: Rambus Inc.

Inventor： Thomas J. Giovannini ,  Catherine Chen ,  Scott C. Best ,  John Eric Linstadt ,  Frederick A. Ware

IPC: G11C8/08 ,  G11C29/44 ,  G06F11/07 ,  G11C8/06

CPC classification number: G06F11/079 ,  G06F11/073 ,  G06F11/0772 ,  G11C5/04 ,  G11C7/20 ,  G11C8/12 ,  G11C29/26 ,  G11C29/44

Abstract: During system initialization, each data buffer device and/or memory device on a memory module is configured with a unique (at least to the module) device identification number. In order to access a single device (rather than multiple buffers and/or memory devices), a target identification number is written to all of the devices using a command bus connected to all of the data buffer devices or memory devices, respectively. The devices whose respective device identification numbers do not match the target identification number are configured to ignore future command bus transactions (at least until the debug mode is turned off.) The selected device that is configured with a device identification number matching the target identification number is configured to respond to command bus transactions.

Abstract translation: 在系统初始化期间，存储器模块上的每个数据缓冲设备和/或存储器设备被配置为唯一（至少对于模块）设备标识号。 为了访问单个设备（而不是多个缓冲器和/或存储设备），使用分别连接到所有数据缓冲设备或存储设备的命令总线将目标识别号码写入所有设备。 各个设备标识号与目标识别号码不一致的设备被配置为忽略未来的命令总线事务（至少直到调试模式被关闭）。所选择的设备被配置有与目标识别号码相匹配的设备标识号 被配置为响应命令总线事务。

公开(公告)号：US09344635B2

公开(公告)日：2016-05-17

申请号：US14355799

申请日：2012-11-08

Applicant: Rambus Inc.

Inventor： Thomas Vogelsang ,  David Geoffrey Stork ,  John Eric Linstadt ,  James E. Harris

IPC: H04N3/14 ,  H04N5/335 ,  H04N5/235 ,  H04N5/355 ,  H04N5/3745 ,  H04N5/353 ,  H04N1/00

CPC classification number: H04N5/235 ,  H04N1/00769 ,  H04N5/2355 ,  H04N5/3355 ,  H04N5/3535 ,  H04N5/355 ,  H04N5/35536 ,  H04N5/3745

Abstract: Pixel circuits in an image sensor are sampled repetitively during an image frame period. At each sampling, a signal indicative of the photocharge integrated by a pixel circuit since last reset is compared to a threshold. If the integrated photocharge signal has not reached the threshold, the pixel circuit is permitted to continue integrating photocharge. If the integrated photocharge signal has reached the threshold, the pixel circuit is reset to remove integrated photocharge and photocharge integration for that pixel circuit is restarted. A corresponding pixel circuit value is recorded for the reset pixel circuit.

Abstract translation: 图像传感器中的像素电路在图像帧周期期间重复采样。 在每次采样时，将与上一次复位后的像素电路集成的光电荷的信号与阈值进行比较。 如果集成光电荷信号尚未达到阈值，则允许像素电路继续积分光电荷。 如果积分的光电荷信号已经达到阈值，则像素电路被复位以去除集成的光电荷并且该像素电路的光电荷积分被重新启动。 记录复位像素电路的对应像素电路值。