公开(公告)号：US08343817B2

公开(公告)日：2013-01-01

申请号：US12535713

申请日：2009-08-05

申请人： Hidekazu Miyairi ,  Kengo Akimoto ,  Yasuo Nakamura

发明人： Hidekazu Miyairi ,  Kengo Akimoto ,  Yasuo Nakamura

IPC分类号： H01L21/00

CPC分类号： H01L29/78696 ,  H01L21/02323 ,  H01L21/02565 ,  H01L21/32139 ,  H01L21/465 ,  H01L21/467 ,  H01L21/4763 ,  H01L21/47635 ,  H01L27/1225 ,  H01L29/0692 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/263 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78693

摘要： To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.

公开(公告)号：US08138032B2

公开(公告)日：2012-03-20

申请号：US12423111

申请日：2009-04-14

申请人： Hidekazu Miyairi ,  Koji Dairiki ,  Yuji Egi ,  Yasuhiro Jinbo ,  Toshiyuki Isa

发明人： Hidekazu Miyairi ,  Koji Dairiki ,  Yuji Egi ,  Yasuhiro Jinbo ,  Toshiyuki Isa

IPC分类号： H01L29/04

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

摘要： A thin film transistor includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode; a semiconductor layer which includes a plurality of crystalline regions in an amorphous structure and which forms a channel formation region, in contact with the gate insulating layer; a semiconductor layer including an impurity element imparting one conductivity type, which forms source and drain regions; and a buffer layer including an amorphous semiconductor between the semiconductor layer and the semiconductor layer including an impurity element imparting one conductivity type. The crystalline regions have an inverted conical or inverted pyramidal crystal particle which grows approximately radially in a direction in which the semiconductor layer is deposited, from a position away from an interface between the gate insulating layer and the semiconductor layer.

摘要翻译： 薄膜晶体管包括在具有绝缘表面的衬底上，覆盖栅电极的栅绝缘层; 半导体层，其包括与所述栅极绝缘层接触的非晶结构中的多个结晶区域，并形成沟道形成区域; 包含赋予一种导电类型的杂质元素的半导体层，其形成源区和漏区; 以及包括在半导体层和半导体层之间的非晶半导体的缓冲层，其包括赋予一种导电类型的杂质元素。 晶体区域具有从远离栅极绝缘层和半导体层之间的界面的位置沿着沉积半导体层的方向大致径向生长的倒锥形或倒棱锥晶体颗粒。

公开(公告)号：US08093112B2

公开(公告)日：2012-01-10

申请号：US12219018

申请日：2008-07-15

申请人： Hidekazu Miyairi ,  Yasuhiro Jinbo ,  Kosei Nei

发明人： Hidekazu Miyairi ,  Yasuhiro Jinbo ,  Kosei Nei

IPC分类号： H01L21/84

CPC分类号： H01L29/78678 ,  H01L27/1285 ,  H01L27/1288 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

摘要： A method for manufacturing display devices including thin film transistors with high reliability in a high yield is provided. A gate insulating film is formed over a gate electrode; a microcrystalline semiconductor is formed over the gate insulating film; the microcrystalline semiconductor film is irradiated with a laser beam from the surface side thereof, whereby the crystallinity of the microcrystalline semiconductor film is improved. Then, a thin film transistor is formed using the microcrystalline semiconductor film whose crystallinity is improved. Further, a display device including the thin film transistor is manufactured.

摘要翻译： 提供了一种以高产率制造包括具有高可靠性的薄膜晶体管的显示装置的方法。 在栅电极上形成栅极绝缘膜; 在栅极绝缘膜上形成微晶半导体; 微晶半导体膜从其表面侧照射激光束，从而提高微晶半导体膜的结晶度。 然后，使用结晶度提高的微晶半导体膜形成薄膜晶体管。 此外，制造包括薄膜晶体管的显示装置。

公开(公告)号：US20110309361A1

公开(公告)日：2011-12-22

申请号：US13163166

申请日：2011-06-17

申请人： Koji Dairiki ,  Hidekazu Miyairi ,  Tsudoi Nagi

发明人： Koji Dairiki ,  Hidekazu Miyairi ,  Tsudoi Nagi

IPC分类号： H01L31/0368 ,  H01L31/0376 ,  H01L31/0224 ,  H01L31/18

CPC分类号： H01L27/1214 ,  H01L29/04 ,  H01L29/78648 ,  H01L29/78696

摘要： A photoelectric conversion element includes a first conductive layer over a substrate; a first insulating layer covering the first conductive layer; a first semiconductor layer over the first insulating layer; a second conductive layer formed over the first semiconductor layer; an impurity semiconductor layer over the second semiconductor layer; a second conductive layer over the impurity semiconductor layer; a second insulating layer covering the first semiconductor layer and the second conductive layer; and a light-transmitting third conductive layer over the second insulating layer. A first opening and a second opening are formed in the second insulating layer. In the first opening, the first semiconductor layer is connected to the third conductive layer. In the second opening, the first conductive layer is connected to the third conductive layer. In the first opening, a light-receiving portion surrounded by an electrode formed of the second conductive layer is provided.

摘要翻译： 光电转换元件包括在衬底上的第一导电层; 覆盖所述第一导电层的第一绝缘层; 在所述第一绝缘层上的第一半导体层; 形成在所述第一半导体层上的第二导电层; 在所述第二半导体层上方的杂质半导体层; 杂质半导体层上的第二导电层; 覆盖所述第一半导体层和所述第二导电层的第二绝缘层; 以及在所述第二绝缘层上方的透光第三导电层。 在第二绝缘层中形成第一开口和第二开口。 在第一开口中，第一半导体层连接到第三导电层。 在第二开口中，第一导电层连接到第三导电层。 在第一开口中，设置由由第二导电层形成的电极包围的光接收部分。

公开(公告)号：US08067775B2

公开(公告)日：2011-11-29

申请号：US12581918

申请日：2009-10-20

申请人： Hidekazu Miyairi ,  Takeshi Osada ,  Shunpei Yamazaki

发明人： Hidekazu Miyairi ,  Takeshi Osada ,  Shunpei Yamazaki

IPC分类号： H01L27/14

CPC分类号： H01L29/7869 ,  H01L21/02565 ,  H01L21/47635 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78648

摘要： As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of higher manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced.

摘要翻译： 作为显示装置具有更高的清晰度，像素数，栅极线和信号线的数量增加。 当栅极线和信号线的数量增加时，由于难以通过接合等安装包括用于驱动栅极和信号线的驱动电路的IC芯片，所以制造成本更高。 用于驱动像素部分的像素部分和驱动电路设置在相同的基板上，驱动电路的至少一部分包括薄膜晶体管，该薄膜晶体管使用介于氧化物半导体上方和下方的栅电极之间的氧化物半导体。 因此，当像素部分和驱动器部分设置在相同的基板上时，可以降低制造成本。

公开(公告)号：US08053333B2

公开(公告)日：2011-11-08

申请号：US12781873

申请日：2010-05-18

申请人： Hidekazu Miyairi

发明人： Hidekazu Miyairi

IPC分类号： H01L27/01

CPC分类号： H01L21/76254 ,  H01L27/1229 ,  H01L29/66772

摘要： To provide a semiconductor device with high performance and low cost and a manufacturing method thereof. A first region including a separated (cleavage) single-crystal semiconductor layer and a second region including a non-single-crystal semiconductor layer are provided over a substrate. It is preferable that laser beam irradiation be performed to the separated (cleavage) single-crystal semiconductor layer in an inert atmosphere, and laser beam irradiation be performed to the non-single-crystal semiconductor layer in an air atmosphere at least once.

摘要翻译： 提供具有高性能和低成本的半导体器件及其制造方法。 包括分离（切割）单晶半导体层的第一区域和包括非单晶半导体层的第二区域设置在衬底上。 优选在惰性气氛中对分离（切割）单晶半导体层进行激光束照射，并且在空气气氛中对非单晶半导体层进行激光束照射至少一次。

公开(公告)号：US08034724B2

公开(公告)日：2011-10-11

申请号：US11826228

申请日：2007-07-13

申请人： Akihisa Shimomura ,  Hidekazu Miyairi ,  Fumito Isaka ,  Yasuhiro Jinbo ,  Junya Maruyama

发明人： Akihisa Shimomura ,  Hidekazu Miyairi ,  Fumito Isaka ,  Yasuhiro Jinbo ,  Junya Maruyama

IPC分类号： H01L21/31

CPC分类号： H01L21/02683 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

摘要： It is an object to provide a method of manufacturing a crystalline silicon device and a semiconductor device in which formation of cracks in a substrate, a base protective film, and a crystalline silicon film can be suppressed. First, a layer including a semiconductor film is formed over a substrate, and is heated. A thermal expansion coefficient of the substrate is 6×10−7/° C. to 38×10−7/° C., preferably 6×10−7/° C. to 31.8×10−7/° C. Next, the layer including the semiconductor film is irradiated with a laser beam to crystallize the semiconductor film so as to form a crystalline semiconductor film. Total stress of the layer including the semiconductor film is −500 N/m to +50 N/m, preferably −150 N/m to 0 N/m after the heating step.

摘要翻译： 本发明的目的是提供一种制造晶体硅器件和半导体器件的方法，其中可以抑制衬底，基底保护膜和晶体硅膜中的裂纹的形成。 首先，在基板上形成包含半导体膜的层，并加热。 基板的热膨胀系数为6×10-7 /℃至38×10-7 /℃，优选为6×10-7 /℃至31.8×10-7 /℃。接下来， 用激光束照射包含半导体膜的层，使半导体膜结晶化，形成结晶半导体膜。 包括半导体膜的层的总应力在加热步骤之后为-500N / m至+ 50N / m，优选为-150N / m至0N / m。

公开(公告)号：US07994021B2

公开(公告)日：2011-08-09

申请号：US11881285

申请日：2007-07-25

申请人： Hidekazu Miyairi ,  Hironobu Shoji ,  Akihisa Shimomura ,  Eiji Higa ,  Tomoaki Moriwaka ,  Shunpei Yamazaki

发明人： Hidekazu Miyairi ,  Hironobu Shoji ,  Akihisa Shimomura ,  Eiji Higa ,  Tomoaki Moriwaka ,  Shunpei Yamazaki

IPC分类号： H01L21/00

CPC分类号： H01L27/1266 ,  H01L27/1288 ,  H01L29/66765

摘要： A method of forming a semiconductor device is provided, including a step of forming a layer which absorbs light over one face of a first substrate, a step of providing a second substrate over the layer which absorbs light, a step of providing a mask to oppose the other face of the first substrate, and a step of transferring the part of the layer which absorbs light to the second substrate by irradiating the layer which absorbs light with a laser beam through the mask.

摘要翻译： 提供一种形成半导体器件的方法，包括形成在第一衬底的一个面上吸收光的层的步骤，在吸收光的层上提供第二衬底的步骤，提供掩模以对抗的步骤 第一基板的另一面，以及通过用激光束照射通过掩模吸收光的层，将吸收光的层的一部分转印到第二基板的步骤。

公开(公告)号：US07989316B2

公开(公告)日：2011-08-02

申请号：US12824775

申请日：2010-06-28

申请人： Akihisa Shimomura ,  Tatsuya Mizoi ,  Hidekazu Miyairi ,  Koichiro Tanaka

发明人： Akihisa Shimomura ,  Tatsuya Mizoi ,  Hidekazu Miyairi ,  Koichiro Tanaka

IPC分类号： H01L21/30

CPC分类号： H01L27/1266 ,  H01L21/02002 ,  H01L21/02038 ,  H01L21/3043 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772 ,  H01L51/5206 ,  H01L2251/554

摘要： To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first.

摘要翻译： 提供一种制造半导体器件的方法，其中在多个位置处转移的半导体膜之间的空间变窄。 具有第一突起的第一接合衬底附接到基底衬底。 然后，第一接合基板在第一突起处分离，使得第一半导体膜形成在基底基板上。 接下来，具有第二突起的第二接合基板被附接到基底基板，使得第二突起被放置在与形成第一半导体膜的区域不同的区域中。 随后，第二接合基板在第二突起处分离，使得第二半导体膜形成在基底基板上。 在第二接合基板中，与第二接合基板垂直的方向（深度方向）上的每个第二突起的宽度大于首先形成的第一半导体膜的膜厚。

公开(公告)号：US07989275B2

公开(公告)日：2011-08-02

申请号：US12396998

申请日：2009-03-03

申请人： Hidekazu Miyairi ,  Takafumi Mizoguchi

发明人： Hidekazu Miyairi ,  Takafumi Mizoguchi

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L27/1288 ,  H01L27/1214

摘要： A light-blocking layer is formed using a first resist mask, and a base film is formed over the light-blocking layer. A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are sequentially formed over the base film, and first etching is performed on the second conductive film, the impurity semiconductor film, the semiconductor film, and the first insulating film using a second resist mask over the second conductive film. Then, second etching in which side-etching is performed is performed on part of the first conductive film to form a gate electrode layer, and source and drain electrode layers, source and drain region layers, and a semiconductor layer are formed using a third resist mask. The first resist mask and the second resist mask are formed using the same photomask. Thus, a thin film transistor is manufactured.

摘要翻译： 使用第一抗蚀剂掩模形成遮光层，并且在遮光层上形成基膜。 在基膜上顺序地形成第一导电膜，第一绝缘膜，半导体膜，杂质半导体膜和第二导电膜，并且在第二导电膜，杂质半导体膜，半导体 并且在第二导电膜上使用第二抗蚀剂掩模的第一绝缘膜。 然后，在第一导电膜的一部分上进行进行侧面蚀刻的第二蚀刻，以形成栅极电极层，并且使用第三抗蚀剂形成源极和漏极电极层，源极和漏极区域以及半导体层 面具。 使用相同的光掩模形成第一抗蚀剂掩模和第二抗蚀剂掩模。 因此，制造薄膜晶体管。