公开(公告)号：US08093112B2

公开(公告)日：2012-01-10

申请号：US12219018

申请日：2008-07-15

申请人： Hidekazu Miyairi ,  Yasuhiro Jinbo ,  Kosei Nei

发明人： Hidekazu Miyairi ,  Yasuhiro Jinbo ,  Kosei Nei

IPC分类号： H01L21/84

CPC分类号： H01L29/78678 ,  H01L27/1285 ,  H01L27/1288 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

摘要： A method for manufacturing display devices including thin film transistors with high reliability in a high yield is provided. A gate insulating film is formed over a gate electrode; a microcrystalline semiconductor is formed over the gate insulating film; the microcrystalline semiconductor film is irradiated with a laser beam from the surface side thereof, whereby the crystallinity of the microcrystalline semiconductor film is improved. Then, a thin film transistor is formed using the microcrystalline semiconductor film whose crystallinity is improved. Further, a display device including the thin film transistor is manufactured.

摘要翻译： 提供了一种以高产率制造包括具有高可靠性的薄膜晶体管的显示装置的方法。 在栅电极上形成栅极绝缘膜; 在栅极绝缘膜上形成微晶半导体; 微晶半导体膜从其表面侧照射激光束，从而提高微晶半导体膜的结晶度。 然后，使用结晶度提高的微晶半导体膜形成薄膜晶体管。 此外，制造包括薄膜晶体管的显示装置。

公开(公告)号：US20090023236A1

公开(公告)日：2009-01-22

申请号：US12219018

申请日：2008-07-15

申请人： Hidekazu Miyairi ,  Yasuhiro Jinbo ,  Kosei Nei

发明人： Hidekazu Miyairi ,  Yasuhiro Jinbo ,  Kosei Nei

IPC分类号： H01L21/00

CPC分类号： H01L29/78678 ,  H01L27/1285 ,  H01L27/1288 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

摘要： A method for manufacturing display devices including thin film transistors with high reliability in a high yield is provided. A gate insulating film is formed over a gate electrode; a microcrystalline semiconductor is formed over the gate insulating film; the microcrystalline semiconductor film is irradiated with a laser beam from the surface side thereof, whereby the crystallinity of the microcrystalline semiconductor film is improved. Then, a thin film transistor is formed using the microcrystalline semiconductor film whose crystallinity is improved. Further, a display device including the thin film transistor is manufactured.

摘要翻译： 提供了一种以高产率制造包括具有高可靠性的薄膜晶体管的显示装置的方法。 在栅电极上形成栅极绝缘膜; 在栅极绝缘膜上形成微晶半导体; 微晶半导体膜从其表面侧照射激光束，从而提高微晶半导体膜的结晶度。 然后，使用结晶度提高的微晶半导体膜形成薄膜晶体管。 此外，制造包括薄膜晶体管的显示装置。

公开(公告)号：US09048147B2

公开(公告)日：2015-06-02

申请号：US13613811

申请日：2012-09-13

申请人： Shunpei Yamazaki ,  Takeshi Osada ,  Hidekazu Miyairi ,  Yasuhiro Jinbo

发明人： Shunpei Yamazaki ,  Takeshi Osada ,  Hidekazu Miyairi ,  Yasuhiro Jinbo

IPC分类号： G09G3/36 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786

CPC分类号： G02F1/1368 ,  G02F1/133345 ,  G02F1/134363 ,  G02F1/13439 ,  G02F1/1365 ,  H01L27/1214 ,  H01L27/1229 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/04 ,  H01L29/78648 ,  Y10T428/24331

摘要： A display device of which frame can be narrowed and of which display characteristics are excellent is provided. In a display device including a switch portion or a buffer portion, a logic circuit portion, and a pixel portion, the pixel portion includes a first inverted staggered TFT and a pixel electrode which is connected to a wiring of the first inverted staggered TFT, the switch portion or the buffer portion includes a second inverted staggered TFT in which a first insulating layer, a semiconductor layer, and a second insulating layer are interposed between a first gate electrode and a second gate electrode, the logic circuit portion includes an inverter circuit including a third inverted staggered thin film transistor and a fourth inverted staggered thin film transistor, and the first to the fourth inverted staggered thin film transistors have the same polarity. The inverter circuit may be an EDMOS circuit.

摘要翻译： 提供了一种可以缩小框架并且显示特性优异的显示装置。 在包括开关部分或缓冲部分，逻辑电路部分和像素部分的显示装置中，像素部分包括连接到第一反交错TFT的布线的第一反交错TFT和像素电极， 开关部分或缓冲部分包括其中第一绝缘层，半导体层和第二绝缘层插入在第一栅电极和第二栅电极之间的第二反交错TFT，所述逻辑电路部分包括逆变器电路，包括 第三反交错薄膜晶体管和第四反交错薄膜晶体管，并且第一至第四反交错薄膜晶体管具有相同的极性。 逆变器电路可以是EDMOS电路。

公开(公告)号：US08778745B2

公开(公告)日：2014-07-15

申请号：US13159830

申请日：2011-06-14

申请人： Ryu Komatsu ,  Yasuhiro Jinbo ,  Hidekazu Miyairi

发明人： Ryu Komatsu ,  Yasuhiro Jinbo ,  Hidekazu Miyairi

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L21/0262 ,  C23C16/0272 ,  C23C16/45523 ,  C23C16/515 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78648 ,  H01L29/78678 ,  H01L29/78696

摘要： A method for manufacturing a semiconductor device comprises the steps of forming a seed over the insulating film by introducing hydrogen and a deposition gas into a first treatment chamber under a first condition and forming a microcrystalline semiconductor film over the seed by introducing hydrogen and the deposition gas into a second treatment chamber under a second condition: a second flow rate of the deposition gas is periodically changed between a first value and a second value; and a second pressure in the second treatment chamber is higher than or equal to 1.0×102 Torr and lower than or equal to 1.0×103 Torr.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：通过在第一条件下将氢和沉积气体引入第一处理室中，在绝缘膜上形成晶种，并通过引入氢和沉积气体在晶种上形成微晶半导体膜 在第二条件下进入第二处理室：沉积气体的第二流量在第一值和第二值之间周期性地变化; 并且第二处理室中的第二压力高于或等于1.0×102乇并且小于或等于1.0×10 3乇。

公开(公告)号：US08558236B2

公开(公告)日：2013-10-15

申请号：US13196926

申请日：2011-08-03

申请人： Shunpei Yamazaki ,  Hidekazu Miyairi ,  Yasuhiro Jinbo

发明人： Shunpei Yamazaki ,  Hidekazu Miyairi ,  Yasuhiro Jinbo

IPC分类号： H01L29/786

CPC分类号： H01L27/1288 ,  H01L21/67017 ,  H01L21/67207 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1244 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66765 ,  H01L29/78678 ,  H01L29/78687 ,  H01L29/78696

摘要： An object is to reduce off-current of a thin film transistor. Another object is to improve electric characteristics of a thin film transistor. Further, it is still another object to improve image quality of a display device using the thin film transistor. An aspect of the present invention is a thin film transistor including a semiconductor film formed over a gate electrode and in an inner region of the gate electrode which does not reach an end portion of the gate electrode, with a gate insulating film interposed therebetween, a film covering at least a side surface of the semiconductor film, and a pair of wirings over the film covering the side surface of the semiconductor film; in which an impurity element serving as a donor is added to the semiconductor film.

摘要翻译： 目的是减少薄膜晶体管的截止电流。 另一个目的是改善薄膜晶体管的电特性。 此外，还有另一个目的是提高使用薄膜晶体管的显示装置的图像质量。 本发明的一个方面是一种薄膜晶体管，它包括半导体膜，该半导体膜形成在栅电极之上，并且在栅电极的内部区域中，其不到达栅电极的端部，栅极绝缘膜介于它们之间， 至少覆盖半导体膜的侧面的膜，以及覆盖半导体膜的侧面的膜上的一对配线; 其中作为供体的杂质元素被添加到半导体膜。

公开(公告)号：US08138032B2

公开(公告)日：2012-03-20

申请号：US12423111

申请日：2009-04-14

申请人： Hidekazu Miyairi ,  Koji Dairiki ,  Yuji Egi ,  Yasuhiro Jinbo ,  Toshiyuki Isa

发明人： Hidekazu Miyairi ,  Koji Dairiki ,  Yuji Egi ,  Yasuhiro Jinbo ,  Toshiyuki Isa

IPC分类号： H01L29/04

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

摘要： A thin film transistor includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode; a semiconductor layer which includes a plurality of crystalline regions in an amorphous structure and which forms a channel formation region, in contact with the gate insulating layer; a semiconductor layer including an impurity element imparting one conductivity type, which forms source and drain regions; and a buffer layer including an amorphous semiconductor between the semiconductor layer and the semiconductor layer including an impurity element imparting one conductivity type. The crystalline regions have an inverted conical or inverted pyramidal crystal particle which grows approximately radially in a direction in which the semiconductor layer is deposited, from a position away from an interface between the gate insulating layer and the semiconductor layer.

摘要翻译： 薄膜晶体管包括在具有绝缘表面的衬底上，覆盖栅电极的栅绝缘层; 半导体层，其包括与所述栅极绝缘层接触的非晶结构中的多个结晶区域，并形成沟道形成区域; 包含赋予一种导电类型的杂质元素的半导体层，其形成源区和漏区; 以及包括在半导体层和半导体层之间的非晶半导体的缓冲层，其包括赋予一种导电类型的杂质元素。 晶体区域具有从远离栅极绝缘层和半导体层之间的界面的位置沿着沉积半导体层的方向大致径向生长的倒锥形或倒棱锥晶体颗粒。

公开(公告)号：US08034724B2

公开(公告)日：2011-10-11

申请号：US11826228

申请日：2007-07-13

申请人： Akihisa Shimomura ,  Hidekazu Miyairi ,  Fumito Isaka ,  Yasuhiro Jinbo ,  Junya Maruyama

发明人： Akihisa Shimomura ,  Hidekazu Miyairi ,  Fumito Isaka ,  Yasuhiro Jinbo ,  Junya Maruyama

IPC分类号： H01L21/31

CPC分类号： H01L21/02683 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

摘要： It is an object to provide a method of manufacturing a crystalline silicon device and a semiconductor device in which formation of cracks in a substrate, a base protective film, and a crystalline silicon film can be suppressed. First, a layer including a semiconductor film is formed over a substrate, and is heated. A thermal expansion coefficient of the substrate is 6×10−7/° C. to 38×10−7/° C., preferably 6×10−7/° C. to 31.8×10−7/° C. Next, the layer including the semiconductor film is irradiated with a laser beam to crystallize the semiconductor film so as to form a crystalline semiconductor film. Total stress of the layer including the semiconductor film is −500 N/m to +50 N/m, preferably −150 N/m to 0 N/m after the heating step.

摘要翻译： 本发明的目的是提供一种制造晶体硅器件和半导体器件的方法，其中可以抑制衬底，基底保护膜和晶体硅膜中的裂纹的形成。 首先，在基板上形成包含半导体膜的层，并加热。 基板的热膨胀系数为6×10-7 /℃至38×10-7 /℃，优选为6×10-7 /℃至31.8×10-7 /℃。接下来， 用激光束照射包含半导体膜的层，使半导体膜结晶化，形成结晶半导体膜。 包括半导体膜的层的总应力在加热步骤之后为-500N / m至+ 50N / m，优选为-150N / m至0N / m。

公开(公告)号：US08884297B2

公开(公告)日：2014-11-11

申请号：US13696865

申请日：2011-05-06

申请人： Sachiaki Tezuka ,  Yasuhiro Jinbo ,  Toshinari Sasaki ,  Hidekazu Miyairi ,  Yosuke Kanzaki ,  Masao Moriguchi

发明人： Sachiaki Tezuka ,  Yasuhiro Jinbo ,  Toshinari Sasaki ,  Hidekazu Miyairi ,  Yosuke Kanzaki ,  Masao Moriguchi

IPC分类号： H01L21/336 ,  H01L21/205 ,  H01L29/04 ,  H01L29/786 ,  H01L21/02 ,  C23C16/50 ,  C23C16/455 ,  C23C16/24 ,  H01L29/66

CPC分类号： H01L21/02513 ,  C23C16/24 ,  C23C16/45523 ,  C23C16/50 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696

摘要： A manufacturing method of a microcrystalline silicon film includes the steps of forming a first microcrystalline silicon film over an insulating film by a plasma CVD method under a first condition; and forming a second microcrystalline silicon film over the first microcrystalline silicon film under a second condition. As a source gas supplied to a treatment chamber, a deposition gas containing silicon and a gas containing hydrogen are used. In the first condition, a flow rate of hydrogen is set at a flow rate 50 to 1000 times inclusive that of the deposition gas, and the pressure inside the treatment chamber is set 67 to 1333 Pa inclusive. In the second condition, a flow rate of hydrogen is set at a flow rate 100 to 2000 times inclusive that of the deposition gas, and the pressure inside the treatment chamber is set 1333 to 13332 Pa inclusive.

摘要翻译： 微晶硅膜的制造方法包括以下步骤：在第一条件下通过等离子体CVD法在绝缘膜上形成第一微晶硅膜; 以及在第二条件下在所述第一微晶硅膜上形成第二微晶硅膜。 作为供给到处理室的源气体，使用含有硅和含氢气体的沉积气体。 在第一条件下，将氢的流量设定为包含沉积气体的流量的50〜1000倍，处理室内的压力为67〜1333Pa。 在第二条件下，将氢的流量设定为包含沉积气体的流量的100〜2000倍，处理室内的压力为1333〜13332Pa。

公开(公告)号：US08637866B2

公开(公告)日：2014-01-28

申请号：US12490447

申请日：2009-06-24

申请人： Toshiyuki Isa ,  Yasuhiro Jinbo ,  Sachiaki Tezuka ,  Koji Dairiki ,  Hidekazu Miyairi ,  Shunpei Yamazaki ,  Takuya Hirohashi

发明人： Toshiyuki Isa ,  Yasuhiro Jinbo ,  Sachiaki Tezuka ,  Koji Dairiki ,  Hidekazu Miyairi ,  Shunpei Yamazaki ,  Takuya Hirohashi

IPC分类号： H01L29/72

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696

摘要： A thin film transistor includes, as a buffer layer, a semiconductor layer which contains nitrogen and includes crystal regions in an amorphous structure between a gate insulating layer and source and drain regions, at least on the source and drain regions side. As compared to a thin film transistor in which an amorphous semiconductor is included in a channel formation region, on-current of a thin film transistor can be increased. In addition, as compared to a thin film transistor in which a microcrystalline semiconductor is included in a channel formation region, off-current of a thin film transistor can be reduced.

摘要翻译： 至少在源区和漏区侧，薄膜晶体管包括作为缓冲层的半导体层，该半导体层含有氮并且包括在栅极绝缘层和源极和漏极区之间的非晶结构中的晶体区域。 与在沟道形成区域中包含非晶半导体的薄膜晶体管相比，可以提高薄膜晶体管的导通电流。 此外，与在沟道形成区域中包含微晶半导体的薄膜晶体管相比，可以减小薄膜晶体管的截止电流。

公开(公告)号：US08569120B2

公开(公告)日：2013-10-29

申请号：US12617406

申请日：2009-11-12

申请人： Erika Takahashi ,  Takayuki Kato ,  Hidekazu Miyairi ,  Yasuhiro Jinbo ,  Mitsuhiro Ichijo ,  Tomokazu Yokoi

发明人： Erika Takahashi ,  Takayuki Kato ,  Hidekazu Miyairi ,  Yasuhiro Jinbo ,  Mitsuhiro Ichijo ,  Tomokazu Yokoi

IPC分类号： H01L21/336

CPC分类号： H01L27/1288 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/50 ,  H01L27/1214 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78678

摘要： An object is to provide a method for manufacturing a thin film transistor having favorable electric characteristics, with high productivity. A gate electrode is formed over a substrate and a gate insulating layer is formed over the gate electrode. A first semiconductor layer is formed over the gate insulating layer by generating plasma using a deposition gas containing silicon or germanium, hydrogen, and a rare gas. Next, a second semiconductor layer including an amorphous semiconductor and a microcrystal semiconductor is formed in such a manner that the first semiconductor layer is partially grown as a seed crystal by generating plasma using a deposition gas containing silicon or germanium, hydrogen, and a gas containing nitrogen. Then, a semiconductor layer to which an impurity imparting one conductivity is added is formed and a conductive film is formed. Thus, a thin film transistor is manufactured.

摘要翻译： 本发明的目的在于提供一种制造具有良好的电特性，高生产率的薄膜晶体管的方法。 在基板上形成栅电极，在栅电极上形成栅极绝缘层。 通过使用包含硅或锗，氢气和稀有气体的沉积气体产生等离子体，在栅绝缘层上形成第一半导体层。 接下来，以这样的方式形成包括非晶半导体和微晶半导体的第二半导体层，使得通过使用包含硅或锗的沉积气体，氢气和含有气体的气体产生等离子体，将第一半导体层部分地生长为晶种 氮。 然后，形成添加有赋予一种导电性的杂质的半导体层，形成导电膜。 因此，制造薄膜晶体管。