Matching circuit for megasonic transducer device
    72.
    发明授权
    Matching circuit for megasonic transducer device 失效
    超声波换能器配套电路

    公开(公告)号:US06954021B2

    公开(公告)日:2005-10-11

    申请号:US10194174

    申请日:2002-07-12

    Abstract: A method and apparatus for matching impedance magnitude and impedance phase for an acoustic- wave transducer load and an RF power source. The acoustic-wave transducer load has a load impedance magnitude and phase. The RF power source has a source impedance magnitude and phase. In one embodiment of the invention, a transformer matches the source and load impedance magnitudes. A capacitor, connected in series with the transformer, matches the source impedance phase to the load impedance phase.

    Abstract translation: 用于匹配声波传感器负载和RF电源的阻抗幅度和阻抗相位的方法和装置。 声波传感器负载具有负载阻抗幅值和相位。 RF电源具有源阻抗幅值和相位。 在本发明的一个实施例中,变压器匹配源极和负载阻抗幅度。 与变压器串联连接的电容器将源阻抗相位与负载阻抗相位相匹配。

    Methods for drying wafer
    73.
    发明授权
    Methods for drying wafer 有权
    干燥晶圆的方法

    公开(公告)号:US06843855B2

    公开(公告)日:2005-01-18

    申请号:US10097853

    申请日:2002-03-12

    Abstract: Apparatuses and methods of processing a substrate. The apparatus includes a wet-cleaning chamber, a drying chamber, and a substrate transferring chamber which transfers a substrate to and from the wet-cleaning chamber and the drying chamber. The drying chamber is one of a supercritical drying chamber or a low pressure drying chamber. The wet-cleaning chamber is one of a single-wafer cleaning chamber, a horizontal spinning chamber, a megasonic wet-cleaning chamber, or a horizontal spinning chamber having acoustic waves transmitted to the substrate.

    Abstract translation: 处理基板的装置和方法。 该设备包括一个湿清洁室,一个干燥室和一个将基板传送到湿清洁室和干燥室的基板传送室。 干燥室是超临界干燥室或低压干燥室之一。 湿式清洁室是单晶片清洗室,卧式纺纱室,兆声波湿式清洗室或具有传递到基板的声波的卧式纺丝室之一。

    Method for reducing particle contamination during the wet processing of semiconductor substrates
    74.
    发明授权
    Method for reducing particle contamination during the wet processing of semiconductor substrates 失效
    在半导体衬底的湿法处理中减少颗粒污染的方法

    公开(公告)号:US06517636B1

    公开(公告)日:2003-02-11

    申请号:US09478094

    申请日:2000-01-05

    CPC classification number: H01L21/02052

    Abstract: The present invention provides methods of reducing particle contamination during wet processing of semiconductor substrates. In one embodiment of the present invention, a surfactant is added to any processing solution having a gas-liquid interface that the semiconductor substrates will be contacted with during immersion. The surfactant reduces the contact angle of the processing solution to less than 90° and inhibits deposition of particles onto the semiconductor substrates during immersion. In a preferred embodiment of the present invention, the semiconductor substrates are contacted with only one gas-liquid interface during wet processing that occurs during the immersion of the semiconductor substrates in an initial liquid processing solution. In this embodiment, the last processing solution in contact with the semiconductor substrates is removed by displacement with a drying fluid stream.

    Abstract translation: 本发明提供了减少半导体衬底湿法处理过程中颗粒污染的方法。 在本发明的一个实施方案中,将表面活性剂加入任何具有液体界面的处理溶液中,半导体衬底在浸入过程中将与之接触。 表面活性剂将处理溶液的接触角降低到小于90°,​​并且在浸渍期间抑制颗粒沉积到半导体衬底上。 在本发明的优选实施例中,半导体衬底在半导体衬底浸入初始液体处理溶液期间发生的湿法处理期间仅与一个气 - 液界面接触。 在该实施例中,通过用干燥流体流移位来去除与半导体衬底接触的最后处理溶液。

    Method of barc removal in semiconductor device manufacturing
    76.
    发明申请
    Method of barc removal in semiconductor device manufacturing 有权
    半导体器件制造中的去除条纹的方法

    公开(公告)号:US20130089987A1

    公开(公告)日:2013-04-11

    申请号:US13317084

    申请日:2011-10-07

    Abstract: A method of removing a high molecular weight organic-comprising hard mask or BARC from a surface of a porous low k dielectric material, where a change in the dielectric constant of the low k dielectric material is less than about 5% after application of the method. The method comprises exposing the organic-comprising hard mask or BARC to nitric acid vapor which contains at least 68% by mass HNO3.

    Abstract translation: 从多孔低k电介质材料的表面去除含有高分子量有机物的硬掩模或BARC的方法,其中在施加该方法之后低k电介质材料的介电常数的变化小于约5% 。 该方法包括将包含有机物的硬掩模或BARC暴露于含有至少68质量%HNO 3的硝酸蒸气。

    Method for forming transparent conductive oxide
    77.
    发明授权
    Method for forming transparent conductive oxide 有权
    形成透明导电氧化物的方法

    公开(公告)号:US08361835B2

    公开(公告)日:2013-01-29

    申请号:US12748790

    申请日:2010-03-29

    Abstract: Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.

    Abstract translation: 本文公开的实施例通常涉及在衬底上沉积透明导电氧化物层的工艺。 透明氧化物层有时沉积在衬底上,以供以后用于太阳能电池器件中。 可以通过冷溅射工艺沉积透明导电氧化物层。 换句话说,在溅射过程中,在处理室中点燃等离子体,其自然地加热基板。 在诸如从感受器的沉积期间不会向衬底提供额外的热量。 在沉积透明导电氧化物层之后,可以以任何顺序对衬底进行退火和蚀刻,以对透明导电氧化物层进行纹理化。 为了调整纹理的形状,可以使用不同的湿蚀刻化学物质。 可以使用不同的蚀刻化学物质来形成透明导电氧化物的表面和蚀刻速率。

    Method for removing implanted photo resist from hard disk drive substrates
    78.
    发明授权
    Method for removing implanted photo resist from hard disk drive substrates 有权
    从硬盘驱动器基板上去除植入光刻胶的方法

    公开(公告)号:US08354035B2

    公开(公告)日:2013-01-15

    申请号:US12821400

    申请日:2010-06-23

    CPC classification number: G11B5/84 G03F7/427

    Abstract: A method of removing resist material from a substrate having a magnetically active surface is provided. The substrate is disposed in a processing chamber and exposed to a fluorine-containing plasma formed from a gas mixture having a reagent, an oxidizing agent, and a reducing agent. A cleaning agent may also be included. The substrate may be cooled by back-side cooling or by a cooling process wherein a cooling medium is provided to the processing chamber while the plasma treatment is suspended. Substrates may be flipped over for two-sided processing, and multiple substrates may be processed concurrently.

    Abstract translation: 提供了从具有磁性活性表面的基板去除抗蚀剂材料的方法。 将基板设置在处理室中并暴露于由具有试剂,氧化剂和还原剂的气体混合物形成的含氟等离子体。 还可以包括清洁剂。 衬底可以通过背面冷却或通过冷却过程冷却,其中在等离子体处理被暂停时将冷却介质提供给处理室。 衬底可以翻转以进行双面处理,并且可以同时处理多个衬底。

    PLASMA ION IMPLANTATION PROCESS FOR PATTERNED DISC MEDIA APPLICATIONS
    80.
    发明申请
    PLASMA ION IMPLANTATION PROCESS FOR PATTERNED DISC MEDIA APPLICATIONS 审中-公开
    等离子体离子植入方法

    公开(公告)号:US20110104393A1

    公开(公告)日:2011-05-05

    申请号:US12939713

    申请日:2010-11-04

    CPC classification number: G11B5/855 H01J37/321 H01J37/32412

    Abstract: Processes and apparatus of forming patterns including magnetic and non-magnetic domains on a magnetically susceptible surface on a substrate are provided. In one embodiment, a method of forming a pattern of magnetic domains on a magnetically susceptible material disposed on a substrate includes exposing a first portion of a magnetically susceptible layer to a plasma formed from a gas mixture, wherein the gas mixture includes at least a halogen containing gas and a hydrogen containing gas for a time sufficient to modify a magnetic property of the first portion of the magnetically susceptible layer exposed through a mask layer from a first state to a second state.

    Abstract translation: 提供了在基板上的磁敏表面上形成包括磁性和非磁畴的图案的方法和装置。 在一个实施例中,在设置在基板上的易磁敏材料上形成磁畴图案的方法包括将磁敏感层的第一部分暴露于由气体混合物形成的等离子体,其中气体混合物至少包含卤素 含有气体和含氢气体的时间足以将通过掩模层暴露的易受敏感层的第一部分的磁特性从第一状态改变到第二状态。

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