公开(公告)号：US20060046482A1

公开(公告)日：2006-03-02

申请号：US10927442

申请日：2004-08-26

Applicant: Steven Verhaverbeke

Inventor： Steven Verhaverbeke

IPC: H01L21/302

CPC classification number: H01L21/02063 ,  G03F7/423 ,  G03F7/427 ,  H01L21/31133 ,  H01L21/76808

Abstract: A method of fabricating a semiconductor device. The method comprises subjecting a substrate having formed thereon photoresist layer to a plasma hydrogen, the substrate further having formed thereon a sacrificial layer; contacting the photoresist layer with a photoresist removal solution; subjecting the sacrificial layer to a plasma hydrogen; and contacting the sacrificial material layer with an etchant solution.

公开(公告)号：US06954021B2

公开(公告)日：2005-10-11

申请号：US10194174

申请日：2002-07-12

Applicant: Roman Gouk ,  Steven Verhaverbeke

Inventor： Roman Gouk ,  Steven Verhaverbeke

IPC: B06B1/02 ,  H01L21/00 ,  H03H7/40 ,  H01L41/09

CPC classification number: H01L21/67057 ,  B06B1/0207 ,  B08B3/12 ,  H01L21/6704 ,  H01L21/67051 ,  H03H7/40

Abstract: A method and apparatus for matching impedance magnitude and impedance phase for an acoustic- wave transducer load and an RF power source. The acoustic-wave transducer load has a load impedance magnitude and phase. The RF power source has a source impedance magnitude and phase. In one embodiment of the invention, a transformer matches the source and load impedance magnitudes. A capacitor, connected in series with the transformer, matches the source impedance phase to the load impedance phase.

Abstract translation: 用于匹配声波传感器负载和RF电源的阻抗幅度和阻抗相位的方法和装置。 声波传感器负载具有负载阻抗幅值和相位。 RF电源具有源阻抗幅值和相位。 在本发明的一个实施例中，变压器匹配源极和负载阻抗幅度。 与变压器串联连接的电容器将源阻抗相位与负载阻抗相位相匹配。

公开(公告)号：US06843855B2

公开(公告)日：2005-01-18

申请号：US10097853

申请日：2002-03-12

Applicant: Steven Verhaverbeke

Inventor： Steven Verhaverbeke

IPC: B08B3/12 ,  H01L21/00 ,  B08B3/00

CPC classification number: H01L21/67167 ,  B08B3/12 ,  H01L21/67034 ,  H01L21/67173 ,  H01L21/67184 ,  H01L21/67207 ,  Y10S134/902

Abstract: Apparatuses and methods of processing a substrate. The apparatus includes a wet-cleaning chamber, a drying chamber, and a substrate transferring chamber which transfers a substrate to and from the wet-cleaning chamber and the drying chamber. The drying chamber is one of a supercritical drying chamber or a low pressure drying chamber. The wet-cleaning chamber is one of a single-wafer cleaning chamber, a horizontal spinning chamber, a megasonic wet-cleaning chamber, or a horizontal spinning chamber having acoustic waves transmitted to the substrate.

Abstract translation: 处理基板的装置和方法。 该设备包括一个湿清洁室，一个干燥室和一个将基板传送到湿清洁室和干燥室的基板传送室。 干燥室是超临界干燥室或低压干燥室之一。 湿式清洁室是单晶片清洗室，卧式纺纱室，兆声波湿式清洗室或具有传递到基板的声波的卧式纺丝室之一。

公开(公告)号：US06517636B1

公开(公告)日：2003-02-11

申请号：US09478094

申请日：2000-01-05

Applicant: Steven Verhaverbeke

Inventor： Steven Verhaverbeke

IPC: C23G100

CPC classification number: H01L21/02052

Abstract: The present invention provides methods of reducing particle contamination during wet processing of semiconductor substrates. In one embodiment of the present invention, a surfactant is added to any processing solution having a gas-liquid interface that the semiconductor substrates will be contacted with during immersion. The surfactant reduces the contact angle of the processing solution to less than 90° and inhibits deposition of particles onto the semiconductor substrates during immersion. In a preferred embodiment of the present invention, the semiconductor substrates are contacted with only one gas-liquid interface during wet processing that occurs during the immersion of the semiconductor substrates in an initial liquid processing solution. In this embodiment, the last processing solution in contact with the semiconductor substrates is removed by displacement with a drying fluid stream.

Abstract translation: 本发明提供了减少半导体衬底湿法处理过程中颗粒污染的方法。 在本发明的一个实施方案中，将表面活性剂加入任何具有液体界面的处理溶液中，半导体衬底在浸入过程中将与之接触。 表面活性剂将处理溶液的接触角降低到小于90°，​​并且在浸渍期间抑制颗粒沉积到半导体衬底上。 在本发明的优选实施例中，半导体衬底在半导体衬底浸入初始液体处理溶液期间发生的湿法处理期间仅与一个气 - 液界面接触。 在该实施例中，通过用干燥流体流移位来去除与半导体衬底接触的最后处理溶液。

公开(公告)号：US09685186B2

公开(公告)日：2017-06-20

申请号：US12703897

申请日：2010-02-11

Applicant: Majeed A. Foad ,  Jacob Newman ,  Jose Antonio Marin ,  Daniel J. Hoffman ,  Stephen Moffatt ,  Steven Verhaverbeke

Inventor： Majeed A. Foad ,  Jacob Newman ,  Jose Antonio Marin ,  Daniel J. Hoffman ,  Stephen Moffatt ,  Steven Verhaverbeke

IPC: G11B5/85 ,  C23C16/00 ,  G11B5/82 ,  C23F1/00 ,  H01L21/673 ,  G11B5/84 ,  H01L21/677 ,  G11B5/855 ,  C23C14/48 ,  H01L21/687 ,  C23C14/50

CPC classification number: G11B5/82 ,  C23C14/48 ,  C23C14/50 ,  C23C16/00 ,  C23F1/00 ,  G11B5/84 ,  G11B5/855 ,  H01L21/673 ,  H01L21/677 ,  H01L21/687

Abstract: Methods and apparatus for forming substrates having magnetically patterned surfaces is provided. A magnetic layer comprising one or more materials having magnetic properties is formed on a substrate. The magnetic layer is subjected to a patterning process in which selected portions of the surface of the magnetic layer are altered such that the altered portions have different magnetic properties from the non-altered portions without changing the topography of the substrate. A protective layer and a lubricant layer are deposited over the patterned magnetic layer. The patterning is accomplished through a number of processes that expose substrates to energy of varying forms. Apparatus and methods disclosed herein enable processing of two major surfaces of a substrate simultaneously, or sequentially by flipping. In some embodiments, magnetic properties of the substrate surface may be uniformly altered by plasma exposure and then selectively restored by exposure to patterned energy.

公开(公告)号：US20130089987A1

公开(公告)日：2013-04-11

申请号：US13317084

申请日：2011-10-07

Applicant: Roman Gouk ,  Steven Verhaverbeke ,  Han-Wen Chen

Inventor： Roman Gouk ,  Steven Verhaverbeke ,  Han-Wen Chen

IPC: H01L21/306

CPC classification number: H01L21/76808 ,  H01L21/02063 ,  H01L21/31138 ,  H01L21/31144

Abstract: A method of removing a high molecular weight organic-comprising hard mask or BARC from a surface of a porous low k dielectric material, where a change in the dielectric constant of the low k dielectric material is less than about 5% after application of the method. The method comprises exposing the organic-comprising hard mask or BARC to nitric acid vapor which contains at least 68% by mass HNO3.

Abstract translation: 从多孔低k电介质材料的表面去除含有高分子量有机物的硬掩模或BARC的方法，其中在施加该方法之后低k电介质材料的介电常数的变化小于约5％ 。 该方法包括将包含有机物的硬掩模或BARC暴露于含有至少68质量％HNO 3的硝酸蒸气。

公开(公告)号：US08361835B2

公开(公告)日：2013-01-29

申请号：US12748790

申请日：2010-03-29

Applicant: Valery V. Komin ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

Inventor： Valery V. Komin ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

IPC: H01L21/00

CPC classification number: C23C14/086 ,  C23C14/541 ,  C23C14/56 ,  C23C14/5846 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/548

Abstract: Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.

Abstract translation: 本文公开的实施例通常涉及在衬底上沉积透明导电氧化物层的工艺。 透明氧化物层有时沉积在衬底上，以供以后用于太阳能电池器件中。 可以通过冷溅射工艺沉积透明导电氧化物层。 换句话说，在溅射过程中，在处理室中点燃等离子体，其自然地加热基板。 在诸如从感受器的沉积期间不会向衬底提供额外的热量。 在沉积透明导电氧化物层之后，可以以任何顺序对衬底进行退火和蚀刻，以对透明导电氧化物层进行纹理化。 为了调整纹理的形状，可以使用不同的湿蚀刻化学物质。 可以使用不同的蚀刻化学物质来形成透明导电氧化物的表面和蚀刻速率。

公开(公告)号：US08354035B2

公开(公告)日：2013-01-15

申请号：US12821400

申请日：2010-06-23

Applicant: Martin A. Hilkene ,  Majeed A. Foad ,  Matthew D. Scotney-Castle ,  Roman Gouk ,  Steven Verhaverbeke ,  Peter I. Porshnev

Inventor： Martin A. Hilkene ,  Majeed A. Foad ,  Matthew D. Scotney-Castle ,  Roman Gouk ,  Steven Verhaverbeke ,  Peter I. Porshnev

IPC: B44C1/22

CPC classification number: G11B5/84 ,  G03F7/427

Abstract: A method of removing resist material from a substrate having a magnetically active surface is provided. The substrate is disposed in a processing chamber and exposed to a fluorine-containing plasma formed from a gas mixture having a reagent, an oxidizing agent, and a reducing agent. A cleaning agent may also be included. The substrate may be cooled by back-side cooling or by a cooling process wherein a cooling medium is provided to the processing chamber while the plasma treatment is suspended. Substrates may be flipped over for two-sided processing, and multiple substrates may be processed concurrently.

Abstract translation: 提供了从具有磁性活性表面的基板去除抗蚀剂材料的方法。 将基板设置在处理室中并暴露于由具有试剂，氧化剂和还原剂的气体混合物形成的含氟等离子体。 还可以包括清洁剂。 衬底可以通过背面冷却或通过冷却过程冷却，其中在等离子体处理被暂停时将冷却介质提供给处理室。 衬底可以翻转以进行双面处理，并且可以同时处理多个衬底。

公开(公告)号：US20120055534A1

公开(公告)日：2012-03-08

申请号：US13227433

申请日：2011-09-07

Applicant: Kurtis Leschkies ,  Roman Gouk ,  Steven Verhaverbeke ,  Robert Visser

Inventor： Kurtis Leschkies ,  Roman Gouk ,  Steven Verhaverbeke ,  Robert Visser

IPC: H01L31/042 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0216

CPC classification number: H01L31/022466 ,  H01L31/0328 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/548

Abstract: Embodiments of the invention are directed to photovoltaic cells comprising a substantially optically transparent buffer layer on a superstrate and a photoabsorber layer on the buffer layer. The buffer layer of detailed embodiments has a work function greater than or equal to about the work function of the photoabsorber layer. Additional embodiments of the invention are directed to photovoltaic modules comprises a plurality of photovoltaic cells and methods of making photovoltaic cells and photovoltaic modules.

Abstract translation: 本发明的实施方案涉及在缓冲层上包括在上层上的基本上光学透明的缓冲层和光吸收层的光伏电池。 详细实施例的缓冲层具有大于或等于光吸收层的功函数的功函数。 本发明的另外的实施例涉及光伏模块，其包括多个光伏电池和制造光伏电池和光伏模块的方法。

公开(公告)号：US20110104393A1

公开(公告)日：2011-05-05

申请号：US12939713

申请日：2010-11-04

Applicant: Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Roman Gouk ,  Steven Verhaverbeke

Inventor： Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Roman Gouk ,  Steven Verhaverbeke

IPC: C23C14/04

CPC classification number: G11B5/855 ,  H01J37/321 ,  H01J37/32412

Abstract: Processes and apparatus of forming patterns including magnetic and non-magnetic domains on a magnetically susceptible surface on a substrate are provided. In one embodiment, a method of forming a pattern of magnetic domains on a magnetically susceptible material disposed on a substrate includes exposing a first portion of a magnetically susceptible layer to a plasma formed from a gas mixture, wherein the gas mixture includes at least a halogen containing gas and a hydrogen containing gas for a time sufficient to modify a magnetic property of the first portion of the magnetically susceptible layer exposed through a mask layer from a first state to a second state.

Abstract translation: 提供了在基板上的磁敏表面上形成包括磁性和非磁畴的图案的方法和装置。 在一个实施例中，在设置在基板上的易磁敏材料上形成磁畴图案的方法包括将磁敏感层的第一部分暴露于由气体混合物形成的等离子体，其中气体混合物至少包含卤素 含有气体和含氢气体的时间足以将通过掩模层暴露的易受敏感层的第一部分的磁特性从第一状态改变到第二状态。