公开(公告)号：US20060183634A1

公开(公告)日：2006-08-17

申请号：US11353172

申请日：2006-02-14

申请人： Tomio Iwasaki

发明人： Tomio Iwasaki

IPC分类号： B01J21/18 ,  B01D50/00

CPC分类号： B01J37/347 ,  B01D53/945 ,  B01J21/185 ,  B01J27/22 ,  B01J35/0013 ,  B01J35/002 ,  B01J37/0217 ,  B01J37/0225 ,  B01J37/0238 ,  B82Y30/00 ,  Y02T10/22

摘要： An object of the present invention is to provide a catalyst structure of high catalytic activity and highly functional exhaust gas treatment system. The catalyst structure of the present invention is provided with a carrier and catalyst particles formed on the carrier, wherein a difference in lattice constant between the carrier material and the catalyst particle material is 16% or less, preferably 1% to 16%.

摘要翻译： 本发明的目的在于提供催化活性高的功能性废气处理系统的催化剂结构。 本发明的催化剂结构具有在载体上形成的载体和催化剂颗粒，载体材料与催化剂颗粒材料之间的晶格常数差为16％以下，优选为1％〜16％。

公开(公告)号：US20060183633A1

公开(公告)日：2006-08-17

申请号：US11352201

申请日：2006-02-13

申请人： Tomio Iwasaki

发明人： Tomio Iwasaki

IPC分类号： B01J27/22 ,  B01J21/18 ,  H01M4/86 ,  H01M4/90 ,  H01M4/88

CPC分类号： H01M8/1009 ,  B82Y30/00 ,  H01M4/8636 ,  H01M4/8657 ,  H01M4/8885 ,  H01M4/90 ,  Y02P70/56

摘要： An object of the present invention is to provide a catalyst structure of high catalytic activity and fuel cell of high cell output. The catalyst structure of the present invention includes a carrier and catalyst particles formed on the carrier, wherein a difference in lattice constant between the carrier material and the catalyst particle material is 16% or less, preferably 1% to 16%.

摘要翻译： 本发明的目的是提供具有高催化活性的催化剂结构和高电池输出的燃料电池。 本发明的催化剂结构体包括在载体上形成的载体和催化剂颗粒，其中载体材料和催化剂颗粒材料之间的晶格常数差为16％以下，优选为1％〜16％。

公开(公告)号：US20060087921A1

公开(公告)日：2006-04-27

申请号：US11214866

申请日：2005-08-31

申请人： Tomio Iwasaki

发明人： Tomio Iwasaki

IPC分类号： G11B11/00

CPC分类号： G11C13/0004 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/144

摘要： A phase change memory comprises a phase-change recording layer for recording information through changing between a crystal phase and an amorphous phase; and a means for applying a tensile strain onto the phase-change recording layer, thereby providing the memory having high reliability, as well as, high tolerance or durability against repetitive rewriting operation.

摘要翻译： 相变存储器包括用于通过在晶相和非晶相之间改变来记录信息的相变记录层; 以及用于在相变记录层上施加拉伸应变的装置，从而提供具有高可靠性的存储器，以及对重复重写操作的高耐受性或耐久性。

公开(公告)号：US20060043605A1

公开(公告)日：2006-03-02

申请号：US11172207

申请日：2005-06-29

申请人： Yasuhiro Naka ,  Tomio Iwasaki ,  Hidekazu Okuda ,  Yuji Fujii

发明人： Yasuhiro Naka ,  Tomio Iwasaki ,  Hidekazu Okuda ,  Yuji Fujii

IPC分类号： H01L23/48

CPC分类号： H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/0554 ,  H01L2224/11 ,  H01L2224/1147 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00

摘要： To prevent peeling-off of a film in a solder connection pad of a semiconductor device, which peeling-off may occur due to thermal load and so on in the manufacture process, a pad structure is adopted in which a Cr film good in adhesiveness to either of a Ti film or Ti compound film and a Ni film (or a Cu film) is interposed between the Ti film or Ti compound film formed on a silicon or silicon oxide film, and the Ni film (or the Cu film) to be connected to solder. Further, to prevent peeling-off at the interface between the Ti film or Ti compound film and the silicon oxide film, the Cr film is formed in a larger area than the Ti film or Ti compound film.

摘要翻译： 为了防止在制造过程中由于热负荷等而在半导体器件的焊料接合焊盘中的膜剥离，由此导致剥离，可以采用衬垫结构，其中Cr膜具有良好的粘合性 在形成于硅或氧化硅膜上的Ti膜或Ti化合物膜之间插入Ti膜或Ti化合物膜和Ni膜（或Cu膜），Ni膜（或Cu膜）为 连接到焊料。 此外，为了防止在Ti膜或Ti化合物膜与氧化硅膜之间的界面处的剥离，Cr膜形成在比Ti膜或Ti化合物膜更大的面积上。

公开(公告)号：US20050179133A1

公开(公告)日：2005-08-18

申请号：US10975448

申请日：2004-10-29

申请人： Tomio Iwasaki ,  Hiroshi Moriya

发明人： Tomio Iwasaki ,  Hiroshi Moriya

IPC分类号： H01L27/10 ,  H01L21/8246 ,  H01L23/48 ,  H01L27/112

CPC分类号： H01L27/11206 ,  H01L27/112

摘要： A semiconductor device provided with a mechanism for recording information is intended to provide a highly reliable one time programmable memory and to provide one time programmable memories at a high yield. In a one time programmable memory, a state in which the electrical resistance is high is varied to another state in which it is low by silicifying a metal with silicon and matching the high resistance state (a metal/silicon separated state) and the low resistance state (a silicide state) to 0 and 1, respectively, wherein there is used an underlayer material which reduces the interfacial energy in the interface with the silicide layer, which constitutes the low resistance state.

摘要翻译： 设置有用于记录信息的机构的半导体器件旨在提供高度可靠的一次可编程存储器，并以高产量提供一次可编程存储器。 在一次可编程存储器中，电阻高的状态通过用硅硅化硅并匹配高电阻状态（金属/硅分离状态）和低电阻而变化到另一个低电位的状态 状态（硅化物状态）分别为0和1，其中使用降低与构成低电阻状态的硅化物层的界面中的界面能的底层材料。

公开(公告)号：US09634316B2

公开(公告)日：2017-04-25

申请号：US14354900

申请日：2011-10-31

申请人： Hiromi Shimazu ,  Tomio Iwasaki

发明人： Hiromi Shimazu ,  Tomio Iwasaki

IPC分类号： H01M4/131 ,  H01M4/1391 ,  H01M4/525 ,  H01M4/66 ,  H01M4/04 ,  H01M10/0525

CPC分类号： H01M4/131 ,  H01M4/0421 ,  H01M4/0426 ,  H01M4/0428 ,  H01M4/1391 ,  H01M4/525 ,  H01M4/661 ,  H01M4/667 ,  H01M10/0525 ,  Y02E60/122

摘要： A lithium ion secondary battery includes a positive electrode capable of occluding and discharging lithium ions, a negative electrode capable of occluding and discharging the lithium ions, and a nonaqueous electrolyte including a lithium salt, and being reversively charged/discharged. The positive electrode includes a metal plate, a metal film formed on a surface of the metal plate, and a positive electrode active material layer, the metal film includes one or more metals selected from the group consisting of ruthenium, osmium, palladium, and platinum having a orientation, the positive electrode active material layer is a compound expressed by the following expression: LiCoxNi1-xO2, (where 0≦x≦1) and is epitaxially grown and formed on a surface of the metal film, and the positive electrode active material is formed such that a c axis of a crystal structure of the positive electrode active material is perpendicular to the metal film.

公开(公告)号：US20130224592A1

公开(公告)日：2013-08-29

申请号：US13884278

申请日：2010-11-18

申请人： Tomio Iwasaki

发明人： Tomio Iwasaki

IPC分类号： H01M4/62

CPC分类号： H01M4/623 ,  C08F8/30 ,  C08F8/34 ,  C08F8/42 ,  C08F114/22 ,  H01M4/13 ,  H01M4/139 ,  H01M10/0525 ,  Y02E60/122 ,  Y02P70/54 ,  Y02T10/7011

摘要： Provided is a lithium ion battery having a long service life by improving an adhesion strength between a binder resin and a metal foil. A binder resin, which is a compound having a chemical structure that contains a polyvinylidene fluoride molecular chain, a six-membered ring such as a cyclohexane ring, and an end group selected from the group consisting of SiX3, S, N, GeX3, and TiX3 (wherein X is a functional group that undergoes a condensation reaction), wherein the six-membered ring is disposed in a region between the polyvinylidene fluoride molecular chain and the end group, is mixed with an active material and applied to a metal foil, and the binder resin is chemically bonded to metal atoms such as copper atoms on the surface of the metal foil.

摘要翻译： 提供一种通过提高粘合剂树脂和金属箔之间的粘合强度而具有长寿命的锂离子电池。 作为具有含有聚偏二氟乙烯分子链的化学结构的化合物，环己烷环等六元环，和选自SiX 3，S，N，GeX 3和 TiX3（其中X是经历缩合反应的官能团），其中将六元环设置在聚偏二氟乙烯分子链和端基之间的区域中，与活性材料混合并施加到金属箔上， 并且粘合剂树脂与金属箔表面上的铜原子等金属原子化学键合。

公开(公告)号：US07641989B2

公开(公告)日：2010-01-05

申请号：US11295005

申请日：2005-12-05

申请人： Ikuko Takekuma ,  Reiko Arai ,  Yoko Ogawa ,  Yoshiyuki Hirayama ,  Yuzuru Hosoe ,  Tomio Iwasaki

发明人： Ikuko Takekuma ,  Reiko Arai ,  Yoko Ogawa ,  Yoshiyuki Hirayama ,  Yuzuru Hosoe ,  Tomio Iwasaki

IPC分类号： G11B5/66

CPC分类号： C23C14/568 ,  C23C14/025 ,  C23C14/0658 ,  C23C14/0688 ,  C23C14/584 ,  G11B5/65 ,  G11B5/732

摘要： Embodiments of the invention provide a medium which provides high media S/N and good corrosion resistance. According to one embodiment, in a perpendicular magnetic recording medium at least comprising a soft-magnetic underlayer, a seed layer, an intermediate layer, a magnetic recording layer and an overcoat layer which are stacked over a substrate in order, the magnetic recording layer has a granular structure which consists of many columnar grains of CoCrPt alloy and a grain boundary layer containing an oxide, the seed layer is made of TaNi alloy or TaTi alloy and the intermediate layer is made of Ru or Ru alloy which contains about 80 at. % Ru or more.

摘要翻译： 本发明的实施方案提供了提供高介质S / N和良好耐腐蚀性的介质。 根据一个实施例，在依次层叠在基板上的至少包括软磁性底层，种子层，中间层，磁记录层和覆盖层的垂直磁记录介质中，磁记录层具有 由CoCrPt合金的许多柱状晶粒和含有氧化物的晶界层组成的粒状结构，种子层由TaNi合金或TaTi合金制成，中间层由含有约80at的Ru或Ru合金制成。 ％Ru或更多。

公开(公告)号：US07279739B2

公开(公告)日：2007-10-09

申请号：US11354092

申请日：2006-02-15

申请人： Yoshiharu Kanegae ,  Tomio Iwasaki

发明人： Yoshiharu Kanegae ,  Tomio Iwasaki

IPC分类号： H01L29/788

CPC分类号： H01L23/485 ,  B82Y10/00 ,  H01L21/28273 ,  H01L23/53223 ,  H01L23/53238 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42332 ,  H01L2924/0002 ,  Y10S977/774 ,  H01L2924/00

摘要： There is provided a high-reliability nano-dots memory by forming the nano dots uniformly. Also, there is provided the high-speed and high-reliability nano-dots memory by employing a silicon-oxide-film alternative material as a tunnel insulating film. The nano-dots memory includes the tunnel insulating film and silicide nano-dots of CoSi2 or NiSi2. Here, the tunnel insulating film is formed by epitaxially growing a high-permittivity insulating film of HfO2, ZrO2 or CeO2 on a silicon or germanium substrate, or preferably, on a silicon or germanium (111) substrate. Also, the silicide nano-dots are formed on the tunnel insulating film.

摘要翻译： 通过均匀地形成纳米点，提供了高可靠性的纳米点记忆。 此外，通过采用氧化硅膜替代材料作为隧道绝缘膜，提供了高速度和高可靠性的纳米点存储器。 纳米点存储器包括隧道绝缘膜和CoSi 2 N或NiSi 2 N的硅化物纳米点。 这里，隧道绝缘膜通过在硅上外延生长HfO 2 2，ZrO 2或CeO 2 2的高介电常数绝缘膜而形成 或锗衬底，或优选在硅或锗（111）衬底上。 此外，硅化物纳米点形成在隧道绝缘膜上。

公开(公告)号：US20060226555A1

公开(公告)日：2006-10-12

申请号：US11449814

申请日：2006-06-09

申请人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwasaki ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

发明人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwasaki ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

IPC分类号： H01L23/48

CPC分类号： H01L21/76811 ,  H01L21/314 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.