公开(公告)号：US5821138A

公开(公告)日：1998-10-13

申请号：US602324

申请日：1996-02-16

申请人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Satoshi Teramoto

IPC分类号： G02F1/13 ,  A42B3/22 ,  G02F1/1333 ,  G02F1/136 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/02 ,  H01L21/20 ,  H01L21/265 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  H01L21/84

CPC分类号： H01L27/1266 ,  H01L21/2022 ,  H01L27/1277 ,  H01L29/66757 ,  H01L2221/68318 ,  H01L2221/68359 ,  H01L2221/68363 ,  Y10S438/928 ,  Y10S438/977

摘要： A method of manufacturing a semiconductor device, comprises the steps of: forming a first insulating film on a first substrate; forming a second insulating film on the first insulating film; forming an amorphous silicon film on the second insulating film; holding a metal element that promotes the crystallization of silicon in contact with a surface of the amorphous silicon film; crystallizing the amorphous silicon film through a heat treatment to obtain a crystalline silicon film; forming a thin-film transistor using the crystalline silicon film; forming a sealing layer that seals the thin-film transistor; bonding a second substrate having a translucent property to the sealing layer; and removing the first insulating film to peel off the first substrate.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在第一衬底上形成第一绝缘膜; 在所述第一绝缘膜上形成第二绝缘膜; 在所述第二绝缘膜上形成非晶硅膜; 保持促进与非晶硅膜的表面接触的硅的结晶的金属元素; 通过热处理使非晶硅膜结晶，得到结晶硅膜; 使用所述晶体硅膜形成薄膜晶体管; 形成密封所述薄膜晶体管的密封层; 将具有半透明性质的第二基板结合到所述密封层; 以及去除所述第一绝缘膜以剥离所述第一基板。

公开(公告)号：US5773325A

公开(公告)日：1998-06-30

申请号：US598279

申请日：1996-02-08

申请人： Satoshi Teramoto

发明人： Satoshi Teramoto

IPC分类号： H01L21/28 ,  H01L21/77 ,  H01L21/84 ,  H01L27/112 ,  H01L27/12 ,  H01L29/49 ,  H01L29/51 ,  H01L29/786 ,  H01L21/318

CPC分类号： H01L29/513 ,  H01L21/28158 ,  H01L27/112 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/78618 ,  H01L29/78621 ,  Y10S148/114

摘要： A gate insulating film covering active layers of a insulated gate field effect semiconductor device utilizing a thin film silicon semiconductor comprises a thin film having the chemical formula SiO.sub.x N.sub.y. By making the concentration of N (nitrogen) high at the interface between the gate insulating film and the gate electrodes, it is possible to prevent the material composing the gate electrodes from being diffused in the gate insulating film. By making the concentration of N (nitrogen) high at the interface between the gate insulating film and the active layers, it is possible to prevent hydrogen ions and other ions from diffusing into the gate insulating film from the active layer.

摘要翻译： 覆盖利用薄膜硅半导体的绝缘栅场效应半导体器件的有源层的栅极绝缘膜包括具有化学式SiO x N y的薄膜。 通过使栅极绝缘膜和栅电极之间的界面处的N（氮）浓度高，可以防止构成栅电极的材料在栅绝缘膜中扩散。 通过使栅极绝缘膜和有源层之间的界面处的N（氮）浓度高，可以防止氢离子等离子从活性层扩散到栅极绝缘膜。

公开(公告)号：US5717215A

公开(公告)日：1998-02-10

申请号：US627422

申请日：1996-04-04

申请人： Takashi Inushima ,  Rimantas Vaitkus ,  Satoshi Teramoto

发明人： Takashi Inushima ,  Rimantas Vaitkus ,  Satoshi Teramoto

IPC分类号： G11B11/08 ,  G11B11/12 ,  G11C7/00 ,  G11C13/04 ,  G01J1/44

CPC分类号： G11C7/005 ,  G11B11/08 ,  G11B11/12 ,  G11C13/047

摘要： An electronic apparatus comprising a material having photoconductivity, an energy bandgap, and trap levels. The material is typified by a thin film of polycrystalline diamond. The material is illuminated with first light having photon energies smaller than the energy bandgap of the material. Then, the material is illuminated with second light having photon energies greater than the energy bandgap of the material to thereby induce a photocurrent. The amount of the first light can be known by measuring the induced photocurrent.

摘要翻译： 一种电子设备，包括具有光电导性，能带隙和陷阱水平的材料。 该材料以多晶金刚石薄膜为代表。 该材料用具有小于材料的能带隙的光子能量的第一光照射。 然后，用具有大于材料的能带隙的光子能量的第二光照射材料，从而引起光电流。 通过测量感应的光电流可以知道第一光的量。

公开(公告)号：US5674304A

公开(公告)日：1997-10-07

申请号：US311275

申请日：1994-09-23

申请人： Takeshi Fukada ,  Mitsunori Sakama ,  Satoshi Teramoto

发明人： Takeshi Fukada ,  Mitsunori Sakama ,  Satoshi Teramoto

IPC分类号： C23C16/34 ,  C03B25/00 ,  C03B32/00 ,  C03C17/00 ,  C03C17/22 ,  C03C17/34 ,  H01L21/324 ,  H01L29/78 ,  H01L29/786 ,  C03D25/00

CPC分类号： C03C17/3482 ,  C03B25/00 ,  C03B32/00 ,  C03C17/001 ,  C03C17/22 ,  C03C17/225 ,  C03C2217/281 ,  C03C2217/282 ,  C03C2218/32 ,  Y02P40/57

摘要： A method of heat-treating a glass substrate where the substrate is thermally treated (such as the formation of films, growth of films, and oxidation) around or above its strain point. After thermally treating the substrate around or above its strain point the glass substrate may be slowly cooled at a rate of 0.01.degree. to 0.5.degree. C./min to achieve maximum shrinkage of the substrate. Following further thermal treatments the substrate may be quickly cooled at a rate of 10.degree. C./min to 300.degree. C./sec to suppress shrinkage of the glass substrate. The substrate can have films such as aluminum nitrate films, silicon oxide films, silicon films, insulating films, semiconductor films, etc. Film formation can occur either before or after thermal treatment of the substrate around or above its strain point and before further thermal treatments.

摘要翻译： 对基板进行热处理（例如膜的形成，膜的生长和氧化）的玻璃基板的热应变点附近或之上的热处理方法。 在其应变点之上或之上对基底进行热处理之后，玻璃基底可以以0.01至0.5℃/分钟的速率缓慢冷却以实现基底的最大收缩。 进一步热处理后，可以以10℃/ min至300℃/秒的速度快速冷却基板，以抑制玻璃基板的收缩。 基板可以具有诸如硝酸铝膜，氧化硅膜，硅膜，绝缘膜，半导体膜等的膜。成膜可以在其应变点周围或之上的基板的热处理之前或之后进行，并且在进一步的热处理之前 。

公开(公告)号：US5621224A

公开(公告)日：1997-04-15

申请号：US539180

申请日：1995-10-05

申请人： Shunpei Yamazaki ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Satoshi Teramoto

IPC分类号： H01L21/205 ,  H01L21/02 ,  H01L21/20 ,  H01L21/31 ,  H01L21/336 ,  H01L27/12 ,  H01L29/786 ,  H01L29/76

CPC分类号： H01L29/78675 ,  H01L21/2026 ,  H01L29/78621

摘要： A thin film transistor with high performance and improved productivity is offered using crystalline silicon film. As the crystalline silicon film that constitutes the active layer of thin film transistor, the one which has irregularities of 100 to 700 .ANG. in level difference is used. Such crystalline silicon film can be obtained by performing laser light irradiation.

摘要翻译： 使用晶体硅膜提供具有高性能和提高生产率的薄膜晶体管。 作为构成薄膜晶体管的活性层的结晶硅膜，使用具有100〜700的不平度的电平差的晶体硅膜。 可以通过进行激光照射来获得这种结晶硅膜。

公开(公告)号：US5620910A

公开(公告)日：1997-04-15

申请号：US494560

申请日：1995-06-22

申请人： Satoshi Teramoto

发明人： Satoshi Teramoto

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/268 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/51 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L21/28202 ,  H01L21/3144 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/518 ,  Y10S438/909

摘要： In an insulated gate type field effect semiconductor device having a thin silicon semiconductor film, the gate insulating film that covers the active layer is a thin film consisting essentially of silicon, oxygen and nitrogen. In the gate insulating film in the device, the nitrogen content is made the largest in the interface between the film and the adjacent gate electrode, and the material constituting the gate electrode is prevented from being diffused into the gate insulating film. In the film, the nitrogen content is made the largest in the interface between the film and the adjacent active layer, and hydrogen ions, etc. are prevented from being diffused from the active layer into the gate insulating film. Prior to the formation of the gate insulating film, the surface of the active layer is irradiated to laser rays or intense rays comparable to laser rays, so as to be oxidized or nitrided.

摘要翻译： 在具有薄硅半导体膜的绝缘栅型场效应半导体器件中，覆盖有源层的栅极绝缘膜是基本上由硅，氧和氮组成的薄膜。 在器件中的栅极绝缘膜中，膜和相邻栅极之间的界面中的氮含量最大，并且防止构成栅电极的材料扩散到栅极绝缘膜中。 在膜中，膜和相邻活性层之间的界面中的氮含量最大，并且防止氢离子等从有源层扩散到栅极绝缘膜中。 在形成栅极绝缘膜之前，将有源层的表面照射到与激光射线相当的激光或强光线上，以便被氧化或氮化。

公开(公告)号：US08992752B2

公开(公告)日：2015-03-31

申请号：US13401221

申请日：2012-02-21

申请人： Masaki Onkawa ,  Shigehiro Otsuka ,  Seiji Oya ,  Satoshi Teramoto ,  Kuniharu Tanaka ,  Takeshi Mitsuoka

发明人： Masaki Onkawa ,  Shigehiro Otsuka ,  Seiji Oya ,  Satoshi Teramoto ,  Kuniharu Tanaka ,  Takeshi Mitsuoka

IPC分类号： G01N27/407

CPC分类号： G01N27/4077

摘要： There is provided a gas sensor element for detecting the concentration of a specific gas component in gas under measurement, which includes a plate-shaped element body and a porous protection layer. The element body has, at one end portion thereof, a gas sensing portion formed with a solid electrolyte substrate and a pair of electrodes. The porous protection layer has a porous structure formed of ceramic particles and surrounds at least the circumference of the one end portion of the element body. In the present invention, the porous protection layer has an inner region, an intermediate region and an outer region laminated together in order of mention from the element body toward the outside. The intermediate region has a porosity lower than those of the inner and outer regions. There is also provided a gas sensor with such a gas sensor element.

摘要翻译： 提供了一种气体传感器元件，用于检测测量气体中特定气体成分的浓度，包括板状元件体和多孔保护层。 元件体的一端具有形成有固体电解质基板和一对电极的气体检测部。 多孔保护层具有由陶瓷颗粒形成的多孔结构，并且至少包围元件主体的一个端部的周边。 在本发明中，多孔保护层具有从元件体朝向外侧依次层叠的内部区域，中间区域和外部区域。 中间区域的孔隙率低于内部和外部区域的孔隙率。 还提供了具有这种气体传感器元件的气体传感器。

公开(公告)号：US08466469B2

公开(公告)日：2013-06-18

申请号：US10815654

申请日：2004-04-02

申请人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Satoshi Teramoto

IPC分类号： H01L29/10

CPC分类号： G02F1/133305 ,  G02F1/136227 ,  H01L29/78636

摘要： A pair of substrates forming the active matrix liquid crystal display are fabricated from resinous substrates having transparency and flexibility. A thin-film transistor has a semiconductor film formed on a resinous layer formed on one resinous substrate. The resinous layer is formed to prevent generation of oligomers on the surface of the resinous substrate during formation of the film and to planarize the surface of the resinous substrate.

摘要翻译： 形成有源矩阵液晶显示器的一对基板由具有透明性和柔性的树脂基板制成。 薄膜晶体管具有形成在形成在一个树脂基板上的树脂层上的半导体膜。 形成树脂层以防止在形成膜期间在树脂基材的表面上产生低聚物并使树脂基材的表面平坦化。

公开(公告)号：US08182664B2

公开(公告)日：2012-05-22

申请号：US12115840

申请日：2008-05-06

申请人： Masamichi Hiraiwa ,  Nobuhiro Inoue ,  Satoshi Teramoto ,  Yukinobu Nagao

发明人： Masamichi Hiraiwa ,  Nobuhiro Inoue ,  Satoshi Teramoto ,  Yukinobu Nagao

IPC分类号： G01N27/419

CPC分类号： G01N27/4067

摘要： A sensor control device for controlling a current application state of a gas sensor element when measuring a specific gas component concentration in a gas to be measured using the gas sensor element, which sensor control device includes: at least one cell having a solid electrolyte body and a pair of electrodes; a sensor heating unit as defined herein; an oxygen reference pole generating unit as defined herein; a damage avoidance time elapse determining unit as defined herein; and a reference generation current application permitting unit as defined herein.

摘要翻译： 一种传感器控制装置，用于在使用气体传感器元件测量要测量的气体中的特定气体成分浓度时，控制气体传感器元件的当前施加状态，所述传感器控制装置包括：至少一个具有固体电解质体的电池， 一对电极; 如本文所定义的传感器加热单元; 如本文所定义的氧参考极产生单元; 如本文所定义的损害回避时间流逝确定单元; 以及如本文所定义的参考生成电流应用许可单元。

公开(公告)号：US07838968B2

公开(公告)日：2010-11-23

申请号：US11293111

申请日：2005-12-05

申请人： Hongyong Zhang ,  Satoshi Teramoto

发明人： Hongyong Zhang ,  Satoshi Teramoto

IPC分类号： H01L23/58 ,  H01L27/01 ,  H01L29/04

CPC分类号： H01L21/31111 ,  G02F1/136227 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/76801 ,  H01L21/76802 ,  H01L27/12 ,  H01L27/1248

摘要： There are disclosed TFTs having improved reliability. An interlayer dielectric film forming the TFTs is made of a silicon nitride film. Other interlayer dielectric films are also made of silicon nitride. The stresses inside the silicon nitride films forming these interlayer dielectric films are set between −5×109 and 5×109 dyn/cm2. This can suppress peeling of the interlayer dielectric films and difficulties in forming contact holes. Furthermore, release of hydrogen from the active layer can be suppressed. In this way, highly reliable TFTs can be obtained.

摘要翻译： 公开了具有提高的可靠性的TFT。 形成TFT的层间电介质膜由氮化硅膜构成。 其它层间绝缘膜也由氮化硅制成。 形成这些层间电介质膜的氮化硅膜内的应力设定在-5×109〜5×10 9 dyn / cm 2之间。 这可以抑制层间绝缘膜的剥离和形成接触孔的困难。 此外，可以抑制从活性层释放氢。 以这种方式，可以获得高度可靠的TFT。