公开(公告)号：US08692255B2

公开(公告)日：2014-04-08

申请号：US13495820

申请日：2012-06-13

申请人： Hideki Ono ,  Ryuto Akiyama

发明人： Hideki Ono ,  Ryuto Akiyama

IPC分类号： H01L29/04

CPC分类号： H01L27/3276

摘要： A semiconductor element includes: an organic semiconductor layer; an electrode disposed on the organic semiconductor layer so as to be in contact with the organic semiconductor layer; and a wiring layer formed separately from the electrode and electrically connected to the electrode.

摘要翻译： 半导体元件包括：有机半导体层; 设置在所述有机半导体层上以与所述有机半导体层接触的电极; 以及与电极分开形成并与电极电连接的布线层。

公开(公告)号：US20140020383A1

公开(公告)日：2014-01-23

申请号：US14002145

申请日：2011-03-07

申请人： Takuya Yoshida ,  Naoyuki Nagafuchi ,  Hideki Ono

发明人： Takuya Yoshida ,  Naoyuki Nagafuchi ,  Hideki Ono

IPC分类号： F03G6/00 ,  F01K3/00

CPC分类号： F03G6/003 ,  F01K3/004 ,  F01K3/16 ,  F01K3/18 ,  F03G6/00 ,  F03G6/005 ,  F03G6/065 ,  F03G6/067 ,  F24S20/20 ,  F24S60/00 ,  Y02E10/44 ,  Y02E10/46

摘要： An object of the present invention is to provide a solar heat steam cycle system capable of operating efficiently and stably in keeping with the status of collected or stored heat, and a control method for use with the system.The system includes a heat collector (1) which collects solar thermal energy, a thermal storage device (2) which stores the solar thermal energy collected by the heat collector, a feed water heater (3) which heats feed water, an evaporator (4) which evaporates the feed water supplied from the feed water heater, and a steam turbine (6) driven by steam generated by the evaporator. The system includes a control valve (31) which controls allocations of heating medium supplied from the thermal storage device to the evaporator and the feed water heater.

摘要翻译： 本发明的目的是提供一种能够有效且稳定地运转以满足收集或储存的热量的状态的太阳能热蒸汽循环系统，以及与该系统一起使用的控制方法。 该系统包括收集太阳热能的集热器（1），存储由集热器收集的太阳热能的热存储装置（2），加热给水的给水加热器（3），蒸发器（4） ），其蒸发从给水加热器供应的给水，以及由蒸发器产生的蒸汽驱动的蒸汽轮机（6）。 该系统包括控制阀（31），其控制从蓄热装置供应到蒸发器和给水加热器的加热介质的分配。

公开(公告)号：US08623695B2

公开(公告)日：2014-01-07

申请号：US12888488

申请日：2010-09-23

申请人： Akihiro Nomoto ,  Hideki Ono

发明人： Akihiro Nomoto ,  Hideki Ono

IPC分类号： H01L51/40

CPC分类号： H01L51/0015 ,  H01L51/0011 ,  H01L51/0545 ,  H01L51/0558

摘要： A method for producing a semiconductor device includes the steps of forming an organic semiconductor layer on a substrate; forming a protective pattern on the organic semiconductor layer; and patterning the organic semiconductor layer by dissolving, in an organic solvent, or subliming the organic semiconductor layer using the protective pattern as a mask.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在衬底上形成有机半导体层; 在有机半导体层上形成保护图案; 并通过在有机溶剂中溶解或使用保护图案作为掩模使有机半导体层升华来图案化有机半导体层。

公开(公告)号：US20130041052A1

公开(公告)日：2013-02-14

申请号：US13580239

申请日：2011-01-06

申请人： Yoshiyuki Nagayasu ,  Kazuaki Hayasaka ,  Hideki Ono

发明人： Yoshiyuki Nagayasu ,  Kazuaki Hayasaka ,  Hideki Ono

IPC分类号： B01J23/75 ,  C07C1/04 ,  B01J23/46

CPC分类号： B01J35/023 ,  B01J21/066 ,  B01J21/08 ,  B01J23/75 ,  B01J23/8913 ,  B01J35/1061 ,  B01J37/009 ,  B01J37/0207 ,  B01J37/088 ,  B01J37/14 ,  B01J37/18 ,  B01J37/343 ,  C10G2/33 ,  C10G2300/4006 ,  C10G2300/703

摘要： A method for producing an activated Fischer-Tropsch synthesis catalyst comprising a hydrogen reduction step of subjecting a catalyst comprising 3 parts by mass to 50 parts by mass, as a metal atom, of a cobalt compound and/or a ruthenium compound, based on 100 parts by mass of a carrier containing a porous inorganic oxide, supported on the carrier, to reduction in a gas containing molecular hydrogen at a temperature of 300° C. to 600° C.; and a CO reduction step of subjecting the catalyst to reduction in a gas containing carbon monoxide and containing no molecular hydrogen at a temperature of 200° C. to 400° C.

摘要翻译： 一种活性费 - 托合成催化剂的制造方法，其特征在于，具有氢还原工序，该催化剂以钴化合物和/或钌化合物为基准，含有3质量份〜50质量份作为金属原子的催化剂， 在载体上承载含有多孔无机氧化物的载体的质量份，以在300℃至600℃的温度下还原含有分子氢的气体。 以及在200℃至400℃的温度下使催化剂还原含有一氧化碳并且不含分子氢的CO的还原步骤。

公开(公告)号：US20120329890A1

公开(公告)日：2012-12-27

申请号：US13581935

申请日：2011-02-14

申请人： Hideki Ono ,  Yoshiyuki Nagayasu ,  Kazuaki Hayasaka

发明人： Hideki Ono ,  Yoshiyuki Nagayasu ,  Kazuaki Hayasaka

IPC分类号： B01J23/75 ,  C07C1/04

CPC分类号： B01J23/75 ,  B01J21/066 ,  B01J21/08 ,  B01J35/006 ,  B01J35/023 ,  B01J35/08 ,  B01J35/1061 ,  B01J37/0201 ,  B01J37/10 ,  B01J37/16 ,  B01J37/18 ,  B01J37/343 ,  C10G2/332 ,  C10G2300/70

摘要： A Fischer-Tropsch synthesis catalyst containing 10 to 30% by mass, as a metal atom, of metallic cobalt and/or cobalt oxide, based on the mass of the catalyst, supported on a carrier containing silica, in which the carrier has an average pore diameter of 8 to 25 nm and the metallic cobalt and/or cobalt oxide has an average crystallite diameter of not less than the average pore diameter of the carrier and less than 35 nm.

摘要翻译： 一种费托合成催化剂，其以金属钴和/或钴氧化物为基准，含有10〜30质量％的金属钴和/或氧化钴，负载在含有二氧化硅的载体上，其中载体具有平均值 孔径为8〜25nm，金属钴和/或氧化钴的平均微晶直径不小于载体的平均孔径，小于35nm。

公开(公告)号：US08197788B2

公开(公告)日：2012-06-12

申请号：US13157916

申请日：2011-06-10

申请人： Takashi Oyama ,  Kazuhisa Nakanishi ,  Tamotsu Tano ,  Keiji Higashi ,  Ippei Fujinaga ,  Hiromitsu Hashisaka ,  Toshitaka Fujii ,  Takashi Noro ,  Akio Sakamoto ,  Kiwamu Takeshita ,  Keizou Ikai ,  Masaki Fujii ,  Hideki Ono

发明人： Takashi Oyama ,  Kazuhisa Nakanishi ,  Tamotsu Tano ,  Keiji Higashi ,  Ippei Fujinaga ,  Hiromitsu Hashisaka ,  Toshitaka Fujii ,  Takashi Noro ,  Akio Sakamoto ,  Kiwamu Takeshita ,  Keizou Ikai ,  Masaki Fujii ,  Hideki Ono

IPC分类号： C01C3/00 ,  C10L1/00 ,  C10G9/00 ,  C09C1/56 ,  C01B31/04 ,  C01B31/00 ,  H01G4/00

CPC分类号： H01G11/44 ,  C01B32/05 ,  C01B32/30 ,  C10B57/045 ,  H01G11/34 ,  Y02E60/13

摘要： The present invention provides a raw coke having such a structure that the graphitized product resulting from graphitization of the raw coke at a temperature of 2800° C. under an inactive gas atmosphere will have ratios of the crystallite size to the lattice constant of 360 or less in the (002) plane and 1500 or less in the (110) plane, as a raw coke providing active carbon produced by alkali-activating the raw coke, which is reduced in remaining alkali content and can simplify washing operation because washing liquid can easily pass through the activated carbon, or as a raw coke for the production of needle coke.

摘要翻译： 本发明提供一种具有这样一种结构的原焦炭，即在惰性气体气氛下，在2800℃的温度下由原焦炭石墨化产生的石墨化产物将使微晶尺寸与晶格常数之比为360以下 在（002）面中，在（110）面中为1500以下的原料焦炭，作为提供通过碱活化生焦炭生成的活性炭的原焦炭，其还原了剩余的碱含量，并且可以简化洗涤操作，因为洗涤液容易 通过活性炭，或作为用于生产针状焦的原焦炭。

公开(公告)号：US20120076646A1

公开(公告)日：2012-03-29

申请号：US13231860

申请日：2011-09-13

申请人： Hideki Ono ,  Kenichi Murata ,  Shigeki Senoo

发明人： Hideki Ono ,  Kenichi Murata ,  Shigeki Senoo

IPC分类号： F01D9/02 ,  F04D21/00 ,  F01D1/02

CPC分类号： F01D5/141 ,  F05D2220/31 ,  F05D2240/121 ,  F05D2240/122 ,  F05D2250/711 ,  F05D2250/713

摘要： Suppressing profile loss of a moving blade due to radial flow without an increase in the length of a shaft of a turbine is disclosed. The degree of reaction on an inner circumferential side is set to an appropriate degree, reducing profile loss due to supersonic inflow, and improving turbine efficiency. A steam turbine stator vane has a trailing edge with a curved line when the stator vane is viewed from a downstream side in the axial direction. The curved line has an inflection point located on an outer circumferential side with respect to the center of the stator vane in the height direction of the stator vane. An inner circumferential portion of the curved line is located on the inner circumferential side with respect to the inflection point. An outer circumferential portion of the curved line is located on the outer circumferential side with respect to the inflection point.

摘要翻译： 公开了由于径向流动而不增加涡轮轴的长度而增加动叶片的轮廓损失。 将内周侧的反应度设定在适当的程度，减少由于超音速流入造成的轮廓损失，提高涡轮效率。 当从轴向的下游侧观察定子叶片时，汽轮机定子叶片具有带有曲线的后缘。 曲线具有相对于定子叶片的中心在定子叶片的高度方向上的外周侧上的拐点。 曲线的内周部相对于拐点位于内周侧。 曲线的外周部相对于拐点位于外周侧。

公开(公告)号：US07709353B2

公开(公告)日：2010-05-04

申请号：US11893458

申请日：2007-08-16

申请人： Hideki Ono ,  Satoshi Taniguchi

发明人： Hideki Ono ,  Satoshi Taniguchi

IPC分类号： H01L21/46

CPC分类号： H01L21/78 ,  H01L21/6835 ,  H01L23/66 ,  H01L24/19 ,  H01L24/25 ,  H01L24/73 ,  H01L24/82 ,  H01L24/91 ,  H01L24/97 ,  H01L2221/68345 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/2518 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/13063 ,  H01L2924/13064 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/30105 ,  H01L2924/3511 ,  Y10S438/977 ,  H01L2924/00014 ,  H01L2224/82 ,  H01L2924/00

摘要： A method for producing a semiconductor device includes the steps of forming a predetermined device in a device layer grown on a semiconductor substrate with a sacrificial layer provided therebetween; and removing the sacrificial layer by etching to separate the semiconductor substrate from the device layer while a supporting substrate is bonded to the side of the device layer, wherein in the step of removing the sacrificial layer, a groove extending from the device layer to the sacrificial layer is formed before the sacrificial layer is removed, and the etching solution is allowed to penetrate to the sacrificial layer through the groove.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在半导体衬底上生长的器件层中形成预定的器件，其中设置有牺牲层; 以及通过蚀刻去除所述牺牲层，同时将所述半导体衬底与所述器件层分离，同时将支撑衬底接合到所述器件层的侧面，其中在去除所述牺牲层的步骤中，从所述器件层延伸到牺牲层 在除去牺牲层之前形成层，并且允许蚀刻溶液通过沟槽穿透到牺牲层。

公开(公告)号：US20090237860A1

公开(公告)日：2009-09-24

申请号：US12094222

申请日：2006-12-27

申请人： Takashi Oyama ,  Kazuhisa Nakanishi ,  Tamotsu Tano ,  Keiji Higashi ,  Ippei Fujinaga ,  Hiromitsu Hashisaka ,  Kiwamu Takeshita ,  Masaki Fujii ,  Hideki Ono

发明人： Takashi Oyama ,  Kazuhisa Nakanishi ,  Tamotsu Tano ,  Keiji Higashi ,  Ippei Fujinaga ,  Hiromitsu Hashisaka ,  Kiwamu Takeshita ,  Masaki Fujii ,  Hideki Ono

IPC分类号： H01G9/155 ,  C10L1/00 ,  C10L5/00

CPC分类号： H01G11/44 ,  C01B32/05 ,  C01B32/342 ,  C10B57/045 ,  H01G11/34 ,  Y02E60/13

摘要： The present invention provides feedstock compositions for use of the production of an activated carbon for electric double layer capacitor electrodes or the production of needle coke, comprising a first heavy oil with an initial boiling point of 300° C. or higher, an asphalten content of 12 percent by mass or less, a saturate content of 50 percent by mass or more and a sulfur content of 0.3 percent by mass or less, produced as a residue resulting from vacuum-distillation of a petroleum-based oil and a second heavy oil with an initial boiling point of 150° C. or higher and a sulfur content of 0.5 percent by mass or less, produced by subjecting a hydrocarbon oil to fluidized catalytic cracking.

摘要翻译： 本发明提供了用于生产双电层电容器电极的活性炭或生产针状焦的原料组合物，其包括初沸点为300℃或更高的第一重油，沥青含量为 12质量％以下，饱和物含量为50质量％以上，硫含量为0.3质量％以下，作为由石油系油和第二重油的真空蒸馏得到的残留物 初始沸点为150℃以上，硫含量为0.5质量％以下，通过使烃油进行流化催化裂化而得到。

公开(公告)号：US07582902B2

公开(公告)日：2009-09-01

申请号：US11722397

申请日：2005-12-21

申请人： Tamotsu Tano ,  Shiro Nakamo ,  Takashi Oyama ,  Hideki Ono ,  Keizou Ikai ,  Kiwamu Takeshita

发明人： Tamotsu Tano ,  Shiro Nakamo ,  Takashi Oyama ,  Hideki Ono ,  Keizou Ikai ,  Kiwamu Takeshita

IPC分类号： H01L29/04

CPC分类号： H01G9/155 ,  C01B32/348 ,  H01G9/058 ,  H01G11/34 ,  Y02E60/13

摘要： The present invention provides a raw material carbon composition that is converted to a carbon material for an electrode in an electric double layer capacitor that can develop a high level of electrostatic capacity with good reproducibility without producing any synthetic pitch. The raw material carbon composition is converted to a carbon material for an electrode in an electric double layer capacitor upon activation treatment and is characterized in that, when the raw material carbon composition is carbonized in an inert gas atmosphere at a temperature of 1000 to 1500° C., the true relative density (RD) and the total hydrogen content (TH %) in the carbonized material obtained after the burning satisfy the following formula (1): RD=−0.75TH %+intercept  (1) wherein the intercept is 2.160 or greater.

摘要翻译： 本发明提供一种原料碳组合物，其可以转化为双电层电容器中的电极用碳材料，其可以以高再现性产生高水平的静电容量，而不产生任何合成间距。 原料碳组合物在活化处理后转变为双电层电容器中的电极用碳材料，其特征在于，当原料碳组成在惰性气体气氛中在1000〜1500℃的温度下碳化时 在燃烧后获得的碳化材料中的真实相对密度（RD）和总氢含量（TH％）满足下式（1）：<？在线公式描述=“在线公式” end =“lead”？> RD = -0.75TH％+ intercept（1）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中截距为2.160或更大。