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196 条记录 (耗时 0.043 秒)

    Process and composition for electrochemical mechanical polishing
    72.
    发明申请
    Process and composition for electrochemical mechanical polishing 审中-公开
    电化学机械抛光的工艺和组成

    公开(公告)号：US20060249394A1

    公开(公告)日：2006-11-09

    申请号：US11251630

    申请日：2005-10-14

    申请人： Renhe Jia ,  You Wang ,  Zhihong Wang ,  Jie Diao ,  Daxin Mao ,  Stan Tsai ,  Lakshmanan Karuppiah ,  Liang-Yuh Chen

    发明人： Renhe Jia ,  You Wang ,  Zhihong Wang ,  Jie Diao ,  Daxin Mao ,  Stan Tsai ,  Lakshmanan Karuppiah ,  Liang-Yuh Chen

    IPC分类号： C09K13/00 ,  B23H9/00 ,  C25F3/00 ,  C09K13/06

    CPC分类号： C25F3/02 ,  B23H5/08 ,  C09K3/1463

    摘要： Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, a pH adjusting agent, a solvent, and a pH between about 3 and about 10. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.

    摘要翻译： 提供了用于处理其上设置有导电材料层的基板的组合物和方法。 在一个实施方案中，提供了一种用于处理其上设置导电材料层的基材的组合物，其组成包括酸性电解质，螯合剂，缓蚀剂，钝化聚合物材料，pH调节剂，溶剂和 pH为约3至约10.该组合物用于在导电材料层上形成钝化层的方法，研磨钝化层以暴露导电材料层的一部分，向衬底施加偏压，以及去除 导电材料层。

    METHOD OF FORMING A TRENCH STRUCTURE
    73.
    发明申请
    METHOD OF FORMING A TRENCH STRUCTURE 失效
    形成TRENCH结构的方法

    公开(公告)号：US20060223322A1

    公开(公告)日：2006-10-05

    申请号：US11424351

    申请日：2006-06-15

    申请人： Liang-Yuh Chen ,  Daniel Carl ,  Israel Beinglass

    发明人： Liang-Yuh Chen ,  Daniel Carl ,  Israel Beinglass

    IPC分类号： H01L21/311

    CPC分类号： C23C16/45589 ,  C23C14/046 ,  C23C16/045 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76865

    摘要： A method of layer formation on a substrate with high aspect ratio features is disclosed. The layer is formed from a gas mixture comprising one or more process gases and one or more etch species. The one or more process gases react to deposit a material layer on the substrate. In conjunction with the material layer deposition, the etch species selectively remove portions of the deposited material layer adjacent to high aspect ratio feature openings, filling such features in a void-free and/or seam-free manner. The material layer may be deposited on the substrate using physical vapor deposition (PVD) and/or chemical vapor deposition (CVD) techniques.

    摘要翻译： 公开了一种在具有高纵横比特征的基底上形成层的方法。 该层由包含一种或多种工艺气体和一种或多种蚀刻物质的气体混合物形成。 一种或多种工艺气体反应以在衬底上沉积材料层。 结合材料层沉积，蚀刻物质选择性地去除与高纵横比特征开口相邻的沉积材料层的部分，以无空隙和/或无缝隙的方式填充这些特征。 材料层可以使用物理气相沉积（PVD）和/或化学气相沉积（CVD）技术沉积在衬底上。

    Control of removal profile in electrochemically assisted CMP
    77.
    发明授权
    Control of removal profile in electrochemically assisted CMP 失效
    电化学辅助CMP中去除曲线的控制

    公开(公告)号：US06991526B2

    公开(公告)日：2006-01-31

    申请号：US10244697

    申请日：2002-09-16

    申请人： Lizhong Sun ,  Liang-Yuh Chen ,  Siew Neo ,  Feng Q. Liu ,  Alain Duboust ,  Stan D. Tsai ,  Rashid Mavliev

    发明人： Lizhong Sun ,  Liang-Yuh Chen ,  Siew Neo ,  Feng Q. Liu ,  Alain Duboust ,  Stan D. Tsai ,  Rashid Mavliev

    IPC分类号： B24B1/00 ,  C25F7/00

    CPC分类号： B24B37/042 ,  B23H5/08

    摘要： Aspects of the invention generally provide a method and apparatus for polishing a substrate using electrochemical deposition techniques. In one aspect, an apparatus for polishing a substrate comprises a counter-electrode and a pad positioned between a substrate and the counter-electrode and a pad positioned between a substrate and the counter-electrode. A dielectric insert is positioned between the counter-electrode and the substrate. The dielectric insert has a plurality of zones, each zone permitting a separate current density between the counter-electrode and the substrate. In another embodiment, an apparatus for polishing a substrate that include a conductive layer comprises a counter-electrode to the material layer. The counter-electrode comprises a plurality of electrically isolated conductive elements. An electrical connector is separately coupled to each of the conductive elements.

    摘要翻译： 本发明的各方面通常提供使用电化学沉积技术来抛光衬底的方法和装置。 一方面，用于研磨衬底的装置包括对电极和位于衬底和对电极之间的衬垫以及位于衬底和对电极之间的衬垫。 电介质插入件位于对电极和衬底之间。 电介质插入件具有多个区域，每个区域允许在对电极和衬底之间分开的电流密度。 在另一个实施例中，用于抛光包括导电层的衬底的装置包括与材料层相对的对电极。 对电极包括多个电绝缘的导电元件。 电连接器分别耦合到每个导电元件。

    Method for dishing reduction and feature passivation in polishing processes
    78.
    发明授权
    Method for dishing reduction and feature passivation in polishing processes 失效

    公开(公告)号：US06884724B2

    公开(公告)日：2005-04-26

    申请号：US09939323

    申请日：2001-08-24

    申请人： Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel A. Carl

    发明人： Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel A. Carl

    IPC分类号： H01L21/288 ,  H01L21/321 ,  H01L21/20

    CPC分类号： H01L21/7684 ,  H01L21/3212

    摘要： Methods and apparatus for planarizing a substrate surface are provided. In one aspect, a method is provided for planarizing a substrate surface including polishing a first conductive material to a barrier layer material, depositing a second conductive material on the first conductive material by an electrochemical deposition technique, and polishing the second conductive material and the barrier layer material to a dielectric layer. In another aspect, a processing system is provided for forming a planarized layer on a substrate, the processing system including a computer based controller configured to cause the system to polish a first conductive material to a barrier layer material, deposit a second conductive material on the first conductive material by an electrochemical deposition technique, and polish the second conductive material and the barrier layer material to a dielectric layer.

    Method and apparatus for face-up substrate polishing
    80.
    发明授权
    Method and apparatus for face-up substrate polishing 失效
    面朝上衬底抛光的方法和装置

    公开(公告)号：US06776693B2

    公开(公告)日：2004-08-17

    申请号：US10163796

    申请日：2002-06-04

    申请人： Alain Duboust ,  Shou-Sung Chang ,  Liang-Yuh Chen ,  Yan Wang ,  Siew Neo ,  Lizhong Sun ,  Feng Q. Liu

    发明人： Alain Duboust ,  Shou-Sung Chang ,  Liang-Yuh Chen ,  Yan Wang ,  Siew Neo ,  Lizhong Sun ,  Feng Q. Liu

    IPC分类号： B24B100

    CPC分类号： B24B37/046 ,  B23H5/08 ,  B24B37/042

    摘要： A method and apparatus are provided for polishing a substrate surface. In one aspect, an apparatus for polishing a substrate includes a basin and a polishing head. A carrier is disposed in the basin and has a substrate supporting surface. A retaining ring is disposed on the carrier and at least partially circumscribes the substrate supporting surface. The polishing head is supported above the basin and includes a conductive polishing pad. Embodiments may further include a vent to allow gas to escape through the polishing head. Embodiments may further include an electrolyte supply that flows electrolyte into the polishing head and out through a permeable electrode and the conductive pad to the substrate. Embodiments may also be configured with a polishing head diameter smaller than the substrate supported by the carrier.

    摘要翻译： 提供了一种用于抛光衬底表面的方法和装置。 一方面，用于抛光衬底的装置包括盆和抛光头。 载体布置在盆中并具有基底支撑表面。 保持环设置在载体上并且至少部分地限定基板支撑表面。 抛光头支撑在盆面上方，并包括导电抛光垫。 实施例还可包括通气孔，以允许气体通过抛光头逸出。 实施例还可以包括将电解质流入抛光头并通过可渗透电极流出并将导电垫流到基底的电解质供应。 实施例还可以被配置为具有小于由载体支撑的基板的抛光头直径。