公开(公告)号：US08716132B2

公开(公告)日：2014-05-06

申请号：US12371411

申请日：2009-02-13

申请人： Tadahiro Ishizaka ,  Shigeru Mizuno

发明人： Tadahiro Ishizaka ,  Shigeru Mizuno

IPC分类号： H01L21/3205

CPC分类号： H01L21/76886 ,  C23C16/047 ,  C23C16/16 ,  C23C16/45523 ,  H01L21/02074 ,  H01L21/28562 ,  H01L21/3205 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76883

摘要： A method for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices to improve electromigration and stress migration in bulk Cu metal. In one embodiment, the method includes providing a patterned substrate containing Cu metal surfaces and dielectric layer surfaces, exposing the patterned substrate to a process gas comprising a metal-containing precursor, and irradiating the patterned substrate with electromagnetic radiation, where selective metal-containing cap layer formation on the Cu metal surfaces is facilitated by the electromagnetic radiation. In some embodiments, the method further includes pre-treating the patterned substrate with additional electromagnetic radiation and optionally a cleaning gas prior to forming the metal-containing cap layer.

摘要翻译： 一种用于将含金属盖层整合到半导体器件的铜（Cu）金属化中以改善体Cu金属中的电迁移和应力迁移的方法。 在一个实施例中，该方法包括提供包含Cu金属表面和电介质层表面的图案化衬底，将图案化衬底暴露于包含含金属前体的工艺气体，并用电磁辐射照射图案化衬底，其中选择性含金属盖 通过电磁辐射促进了Cu金属表面上的层形成。 在一些实施例中，该方法还包括在形成含金属盖层之前，用额外的电磁辐射和任选的清洁气体预处理图案化衬底。

公开(公告)号：US20130203250A1

公开(公告)日：2013-08-08

申请号：US13566515

申请日：2012-08-03

申请人： Tadahiro Ishizaka ,  Atsushi Gomi ,  Kenzi Suzuki ,  Tatsuo Hatano ,  Yasushi Mizusawa

发明人： Tadahiro Ishizaka ,  Atsushi Gomi ,  Kenzi Suzuki ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC分类号： H01L21/768

CPC分类号： H01L21/76841 ,  C23C14/02 ,  C23C14/046 ,  C23C16/02 ,  C23C16/045 ,  H01L21/02063 ,  H01L21/02126 ,  H01L21/28556 ,  H01L21/3105 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843

摘要： A semiconductor device manufacturing method includes: modifying a surface of a burying recess, of which surface is hydrophobic and which is formed in a dielectric film, to a hydrophilic state by supplying a plasma containing H ions and H radicals or a plasma containing NHx (x being 1, 2 or 3) ions and NHx radicals to the dielectric film formed on a substrate and containing silicon, carbon, hydrogen and oxygen, a bottom portion of the burying recess being exposed with a lower conductive layer; and directly forming an adhesion film formed of a Ru film on the hydrophilic surface of the recess. The method further includes burying copper forming a conductive path in the recess.

摘要翻译： 半导体器件制造方法包括：通过供给含有H离子和H基团的等离子体或包含NH x（x）的等离子体，将其表面是疏水性的并且形成在电介质膜中的掩埋凹槽的表面改性为亲水状态 是1,2或3）离子和NH x自由基，形成在衬底上并含有硅，碳，氢和氧的电介质膜，埋入凹部的底部用下导电层暴露; 并且在凹部的亲水性表面上直接形成由Ru膜形成的粘合膜。 该方法还包括在凹槽中形成导电路径的铜。

公开(公告)号：US20120247949A1

公开(公告)日：2012-10-04

申请号：US13433527

申请日：2012-03-29

申请人： Takashi SAKUMA ,  Tadahiro Ishizaka ,  Tatsuo Hatano ,  Shiro Hayashi ,  Toshiaki Fujisato ,  Hiroyuki Yokohara ,  Hiroyuki Toshima

发明人： Takashi SAKUMA ,  Tadahiro Ishizaka ,  Tatsuo Hatano ,  Shiro Hayashi ,  Toshiaki Fujisato ,  Hiroyuki Yokohara ,  Hiroyuki Toshima

IPC分类号： C23C14/34

CPC分类号： H01L21/2855 ,  C23C14/046 ,  C23C14/185 ,  C23C14/345 ,  C23C14/5833 ,  C23C14/5873 ,  C23C14/5893 ,  C23C16/509 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76873

摘要： A film forming method includes depositing a metal thin film on a target substrate by generating an inductively coupled plasma in a processing chamber while introducing a plasma generating gas in the processing chamber with the substrate disposed on a placing table, by supplying DC power to a metal target from a DC power source, and by applying high-frequency bias to the placing table. A resputtering method includes resputtering the deposited metal thin film by stopping the generating of the inductively coupled plasma, by stopping the power supply from the DC power source, and by applying the high-frequency bias to the placing table while introducing the plasma generating gas in the processing chamber to form a capacitively coupled plasma in the processing chamber and by attracting ions of the plasma generating gas to the target substrate where the metal thin film is deposited.

摘要翻译： 一种成膜方法，包括通过在处理室中产生电感耦合等离子体，同时在处理室中引入等离子体产生气体，其中衬底设置在放置台上，通过向金属提供DC电力，在目标衬底上沉积金属薄膜 来自直流电源的目标，以及通过对放置台应用高频偏压。 再溅射方法包括：通过停止来自直流电源的电力供给，通过停止产生电感耦合等离子体，并将高频偏压施加到放置台，同时将等离子体产生气体引入到 所述处理室在所述处理室中形成电容耦合的等离子体，并且通过将所述等离子体产生气体的离子吸附到沉积金属薄膜的目标衬底上。

公开(公告)号：US08058728B2

公开(公告)日：2011-11-15

申请号：US12242416

申请日：2008-09-30

申请人： Tadahiro Ishizaka ,  Shigeru Mizuno

发明人： Tadahiro Ishizaka ,  Shigeru Mizuno

IPC分类号： H01L23/48

CPC分类号： H01L21/76844 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76873

摘要： An interconnect structure is provided. The interconnect structure includes an interconnect opening formed within a dielectric material, a diffusion barrier on the dielectric material, where the diffusion barrier contains a compound from a thermal reaction between cobalt (Co) metal from at least a portion of a cobalt metal layer formed on the dielectric material and a dielectric reactant element from the dielectric material. The interconnect structure further includes a cobalt nitride adhesion layer in the interconnect opening, and a Cu metal fill in the interconnect opening, wherein the diffusion barrier and the cobalt nitride adhesion layer surround the Cu metal fill within the interconnect opening.

摘要翻译： 提供互连结构。 所述互连结构包括形成在电介质材料内的互连开口，介电材料上的扩散阻挡层，其中所述扩散阻挡层包含来自在钴金属层的至少一部分上形成的钴（Co）金属之间的热反应的化合物 电介质材料和介电反应物元件。 所述互连结构还包括所述互连开口中的氮化钴粘合层和所述互连开口中的Cu金属填充物，其中所述扩散阻挡层和所述钴酸钾粘附层围绕所述互连开口内的所述Cu金属填充物。

公开(公告)号：US08034406B2

公开(公告)日：2011-10-11

申请号：US11526767

申请日：2006-09-26

申请人： Tadahiro Ishizaka ,  Masamichi Hara ,  Yasushi Mizusawa

发明人： Tadahiro Ishizaka ,  Masamichi Hara ,  Yasushi Mizusawa

IPC分类号： C23C16/00 ,  C23C14/00

CPC分类号： C23C16/54 ,  C23C14/566

摘要： A method and system are provided for integrated substrate processing in Cu metallization. The method includes providing a substrate in a vacuum processing tool containing a plurality of processing systems configured to process the substrate and a substrate transfer system configured to transfer the substrate under vacuum conditions between the plurality of processing systems, and performing an integrated deposition process on the substrate. The plurality of processing systems and the substrate transfer system maintain a base pressure of background gases at 6.8×10−8 Ton or lower, preferably 5×10−8 Torr or lower, during the integrated deposition process. According to one embodiment, the integrated process includes depositing a barrier metal layer on the substrate, and depositing a Cu layer on the barrier metal layer. According to another embodiment, the integrated process further includes depositing a Ru layer on the barrier metal layer, and depositing a Cu layer on the Ru layer.

摘要翻译： 提供了用于Cu金属化中的集成基板处理的方法和系统。 该方法包括在真空处理工具中提供衬底，该真空处理工具包含配置成处理衬底的多个处理系统和被配置为在多个处理系统之间的真空条件下传送衬底的衬底传送系统，以及对 基质。 在整个沉积过程中，多个处理系统和基板传送系统将背景气体的基础压力保持在6.8×10-8吨或更低，优选5×10-8托或更低。 根据一个实施例，集成工艺包括在衬底上沉积阻挡金属层，以及在阻挡金属层上沉积Cu层。 根据另一实施例，集成工艺还包括在阻挡金属层上沉积Ru层，以及在Ru层上沉积Cu层。

公开(公告)号：US07829158B2

公开(公告)日：2010-11-09

申请号：US11745384

申请日：2007-05-07

申请人： Tadahiro Ishizaka

发明人： Tadahiro Ishizaka

IPC分类号： C23C16/16 ,  H05H1/24

CPC分类号： C23C16/0281 ,  C23C16/34 ,  C23C16/36 ,  C23C16/45536 ,  C23C16/4554 ,  H01J37/32091 ,  H01J2237/2001 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846

摘要： A method of forming a tantalum containing multi-layer film. In one embodiment, the method includes disposing a substrate in a process chamber, heating the substrate, exposing the substrate to a tantalum containing precursor to adsorb at least a portion of the tantalum containing precursor on a surface of the substrate, purging the process chamber with a purge gas, and exposing the substrate to a process space comprising helium and hydrogen ionized at a first radio frequency power to form a first tantalum containing layer on the surface. The method further includes exposing the substrate to the tantalum containing precursor to adsorb at least a portion of the precursor on the first tantalum containing layer, purging the process chamber with the purge gas, and exposing the substrate to the process space at a second radio frequency power to form a second tantalum containing layer, where the second radio frequency power is different from the first radio frequency power.

摘要翻译： 一种形成含钽多层膜的方法。 在一个实施例中，该方法包括将衬底设置在处理室中，加热衬底，将衬底暴露于含钽前体，以吸附至少部分含钽前体的衬底表面上， 吹扫气体，并将衬底暴露于包括以第一射频功率电离的氦和氢的处理空间，以在表面上形成第一含钽层。 该方法还包括将衬底暴露于含钽前体以吸附第一钽含量层上的前体的至少一部分，用吹扫气体清洗处理室，并以第二射频将衬底暴露于处理空间 以形成第二钽含量层，其中第二射频功率不同于第一射频功率。

公开(公告)号：US20100210108A1

公开(公告)日：2010-08-19

申请号：US12371411

申请日：2009-02-13

申请人： Tadahiro Ishizaka ,  Shigeru Mizuno

发明人： Tadahiro Ishizaka ,  Shigeru Mizuno

IPC分类号： H01L21/3205

CPC分类号： H01L21/76886 ,  C23C16/047 ,  C23C16/16 ,  C23C16/45523 ,  H01L21/02074 ,  H01L21/28562 ,  H01L21/3205 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76883

摘要： A method for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices to improve electromigration and stress migration in bulk Cu metal. In one embodiment, the method includes providing a patterned substrate containing Cu metal surfaces and dielectric layer surfaces, exposing the patterned substrate to a process gas comprising a metal-containing precursor, and irradiating the patterned substrate with electromagnetic radiation, where selective metal-containing cap layer formation on the Cu metal surfaces is facilitated by the electromagnetic radiation. In some embodiments, the method further includes pre-treating the patterned substrate with additional electromagnetic radiation and optionally a cleaning gas prior to forming the metal-containing cap layer.

摘要翻译： 一种用于将含金属盖层整合到半导体器件的铜（Cu）金属化中以改善体Cu金属中的电迁移和应力迁移的方法。 在一个实施例中，该方法包括提供包含Cu金属表面和电介质层表面的图案化衬底，将图案化衬底暴露于包含含金属前体的工艺气体，并用电磁辐射照射图案化衬底，其中选择性含金属盖 通过电磁辐射促进了Cu金属表面上的层形成。 在一些实施例中，该方法还包括在形成含金属盖层之前，用额外的电磁辐射和任选的清洁气体预处理图案化的衬底。

公开(公告)号：US20100081274A1

公开(公告)日：2010-04-01

申请号：US12240894

申请日：2008-09-29

申请人： Tadahiro Ishizaka ,  Shigeru Mizuno ,  Frank M. Cerio, JR.

发明人： Tadahiro Ishizaka ,  Shigeru Mizuno ,  Frank M. Cerio, JR.

IPC分类号： H01L21/4763

CPC分类号： H01L21/76814 ,  C23C16/0236 ,  C23C16/16 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/3105 ,  H01L21/76826 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76864

摘要： A method is provided for integrating ruthenium (Ru) metal deposition into manufacturing of semiconductor devices to improve electromigration and stress migration in copper (Cu) metal. Embodiments of the invention include treating patterned substrates containing metal layers and low-k dielectric materials with NHx (x≦3) radicals and H radicals to improve selective formation of ruthenium (Ru) metal cap layers on the metal layers relative to the low-k dielectric materials.

摘要翻译： 提供了一种用于将钌（Ru）金属沉积物集成到半导体器件的制造中以改善铜（Cu）金属中的电迁移和应力迁移的方法。 本发明的实施方案包括处理包含金属层和低k电介质材料的图案化衬底，其具有NH x（x和n L e 3）基团和H基团以改善相对于低k的金属层上钌（Ru）金属帽层的选择性形成 介电材料。

公开(公告)号：US07407876B2

公开(公告)日：2008-08-05

申请号：US11378271

申请日：2006-03-20

申请人： Tadahiro Ishizaka

发明人： Tadahiro Ishizaka

IPC分类号： H01L21/44 ,  H01L21/4763

CPC分类号： H01L21/76843 ,  C23C16/32 ,  C23C16/36 ,  C23C16/4554 ,  C23C16/5096 ,  H01L21/28562

摘要： A method for processing a substrate for forming TaC and TaCN films having good adhesion to Cu. The method includes disposing the substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, and depositing a TaC or TaCN film on the substrate using the PEALD process. The PEALD process includes (a) exposing the substrate to a first process material containing tantalum, (b) exposing the substrate to a second process material containing a plasma excited reducing agent, (c) repeating steps (a) (b) a predetermined number of times, (d) exposing the substrate to plasma excited Argon, and (e) repeating steps (c) and (d) until the TaC or TaCN film has a desired thickness. Preferably, purging of the process chamber is performed after one or more of the exposing steps.

摘要翻译： 一种处理用于形成对Cu具有良好粘附性的TaC和TaCN膜的基板的方法。 该方法包括将衬底设置在配置为执行PEALD工艺的等离子体增强原子层沉积（PEALD）系统的处理室中，以及使用PEALD工艺在衬底上沉积TaC或TaCN膜。 PEALD工艺包括（a）将衬底暴露于含有钽的第一工艺材料，（b）将衬底暴露于含有等离子体激发还原剂的第二工艺材料，（c）重复步骤（a）（b）预定数量 的时间，（d）将衬底暴露于等离子体激发的氩，和（e）重复步骤（c）和（d），直到TaC或TaCN膜具有所需的厚度。 优选地，在一个或多个曝光步骤之后执行处理室的清洗。

公开(公告)号：US20070231487A1

公开(公告)日：2007-10-04

申请号：US11393872

申请日：2006-03-31

申请人： Tadahiro Ishizaka

发明人： Tadahiro Ishizaka

IPC分类号： C23C16/00

CPC分类号： C23C16/32 ,  C23C16/36 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/5096

摘要： A method for forming a metal carbide or metal carbonitride film on a substrate using a vapor deposition process. The method includes comprises introducing a first process material, such as a film precursor, to the substrate followed by introducing a second process material, such as a film reducing agent, to the substrate, whereby plasma can be formed during the introduction of the second process material in order to assist reduction of the first process material on the substrate. Additionally, the temperature of the substrate is elevated to a value approximately equal to or greater than the decomposition temperature of the first process material in order to improve adhesion properties for the metal carbide or metal carbonitride film.

摘要翻译： 使用蒸镀法在基板上形成金属碳化物或金属碳氮化物膜的方法。 该方法包括将诸如膜前体的第一处理材料引入到基板，然后将诸如薄膜还原剂的第二处理材料引入到基板中，由此在引入第二工艺期间可以形成等离子体 材料，以帮助减少基材上的第一工艺材料。 此外，为了提高金属碳化物或金属碳氮化物膜的粘合性，将基板的温度升高到等于或大于第一处理材料的分解温度的值。